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1. 发明授权

US07845931B2 Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor 有权
标题翻译：聚合技术减弱了液体固化的氧气抑制及其组成
公开(公告)号：US07845931B2
公开(公告)日：2010-12-07
申请号：US11858687
申请日：2007-09-20
申请人： Frank Y. Xu , Edward Brian Fletcher , Pankaj B. Lad , Michael P. C. Watts
发明人： Frank Y. Xu , Edward Brian Fletcher , Pankaj B. Lad , Michael P. C. Watts
IPC分类号： B29C59/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： The present invention includes a method of solidifying a polymerizable liquid to form a film on a substrate that features minimizing inhibition of the polymerization process by oxygen contained in the atmosphere surrounding the polymerizable liquid. To that end, the polymerizable liquid includes, inter alia, an initiator that consumes oxygen that interacts with the polymerizable liquid and generates additional free radicals to facilitate the polymerizable process.
摘要翻译：本发明包括固化可聚合液体以在基材上形成薄膜的方法，其特征在于使包围在可聚合液体周围的气氛中的氧的聚合过程的抑制最小化。为此，可聚合液体尤其包括消耗与可聚合液体相互作用的氧的引发剂，并产生额外的自由基以促进可聚合过程。

2. 发明授权

US07939131B2 Method to provide a layer with uniform etch characteristics 有权
标题翻译：提供具有均匀蚀刻特性的层的方法
公开(公告)号：US07939131B2
公开(公告)日：2011-05-10
申请号：US10919224
申请日：2004-08-16
申请人： Frank Y. Xu , Christopher J. Mackay , Pankaj B. Lad , Ian M. McMackin , Van N. Truskett , Wesley D. Martin , Edward B. Fletcher , David C. Wang , Nicholas A. Stacey , Michael P. C. Watts
发明人： Frank Y. Xu , Christopher J. Mackay , Pankaj B. Lad , Ian M. McMackin , Van N. Truskett , Wesley D. Martin , Edward B. Fletcher , David C. Wang , Nicholas A. Stacey , Michael P. C. Watts
IPC分类号： B05D3/12
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10T428/1386
摘要： The present invention includes a method and a composition to form a layer on a substrate having uniform etch characteristics. To that end, the method includes controlling variations in the characteristics of a solid layer, such etch characteristics over the area of the solid layer as a function of the relative rates of evaporation of the liquid components that comprise the composition from which the solid layer is formed.
摘要翻译：本发明包括在具有均匀蚀刻特性的基底上形成层的方法和组合物。为此，该方法包括控制固体层的特性的变化，这种固体层面积上的这种蚀刻特性是构成组合物的液体组分的相对蒸发速率的函数的函数，其中固体层是固体层形成。

3. 发明授权

US07090716B2 Single phase fluid imprint lithography method 有权
标题翻译：单相流体压印光刻法
公开(公告)号：US07090716B2
公开(公告)日：2006-08-15
申请号：US10677639
申请日：2003-10-02
申请人： Ian M. McMackin , Nicholas A. Stacey , Daniel A. Babbs , Duane J. Voth , Michael P. C. Watts , Van N. Truskett , Frank Y. Xu , Ronald D. Voisin , Pankaj B. Lad
发明人： Ian M. McMackin , Nicholas A. Stacey , Daniel A. Babbs , Duane J. Voth , Michael P. C. Watts , Van N. Truskett , Frank Y. Xu , Ronald D. Voisin , Pankaj B. Lad
IPC分类号： B01D19/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10S425/06 , Y10S425/815 , Y10S438/909
摘要： The present invention is directed toward a method for reducing pattern distortions in imprinting layers by reducing gas pockets present in a layer of viscous liquid deposited on a substrate. To that end, the method includes varying a transport of the gases disposed proximate to the viscous liquid. Specifically, the atmosphere proximate to the substrate wherein a pattern is to be recorded is saturated with gases that are either highly soluble, highly diffusive, or both with respect to the viscous liquid being deposited. Additionally, or in lieu of saturating the atmosphere, the pressure of the atmosphere may be reduced.
摘要翻译：本发明涉及通过减少存在于沉积在基底上的粘性液体层中的气穴来减少压印层中的图案失真的方法。为此，该方法包括改变靠近粘性液体设置的气体的输送。具体地，其中待记录图案的基板附近的气氛相对于被沉积的粘性液体是高度可溶的，高度扩散的或者两者都被饱和。另外，或者代替饱和气氛，可以降低气氛的压力。

4. 发明授权

US07981481B2 Method for controlling distribution of fluid components on a body 有权
标题翻译：控制体内流体组分分布的方法
公开(公告)号：US07981481B2
公开(公告)日：2011-07-19
申请号：US11608374
申请日：2006-12-08
申请人： Frank Xu , Ian McMackin , PanKaj B. Lad , Michael P. C. Watts
发明人： Frank Xu , Ian McMackin , PanKaj B. Lad , Michael P. C. Watts
IPC分类号： C08F2/48
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： The present invention provides a method of controlling the distribution of a fluid on a body that features compensating for varying distribution of constituent components of a composition that moved over a surface of a substrate. To that end, the method includes generating a sequence of patterns of liquid upon a substrate, each of which includes a plurality of spaced-apart liquid regions, with voids being defined between adjacent liquid regions. A second of the patterns of liquid of the sequence is arranged so that the liquid regions associated therewith are in superimposition with the voids of a first of the patterns of liquid of the sequence.
摘要翻译：本发明提供一种控制流体在体上的分布的方法，其特征在于补偿在衬底的表面上移动的组合物的组成成分的变化分布。为此，该方法包括在衬底上产生一系列液体图案，每个衬底包括多个间隔开的液体区域，空隙位于相邻的液体区域之间。布置了序列液体的第二种图案，使得与其相关联的液体区域与序列的第一种液体图案的空隙重叠。

5. 发明授权

US07122482B2 Methods for fabricating patterned features utilizing imprint lithography 有权
标题翻译：使用压印光刻制造图案特征的方法
公开(公告)号：US07122482B2
公开(公告)日：2006-10-17
申请号：US10694284
申请日：2003-10-27
申请人： Frank Y. Xu , Nicholas E. Stacey , Michael P. C. Watts , Ecron D. Thompson
发明人： Frank Y. Xu , Nicholas E. Stacey , Michael P. C. Watts , Ecron D. Thompson
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： B29C43/003 , B29C2043/025 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： One embodiment of the present invention is a method for generating patterned features on a substrate that includes: (a) forming a first layer on at least a portion of a surface of the substrate, the first layer comprising at least one layer of a first material, which one layer abuts the surface of the substrate; (b) forming a second layer of a second material on at least a portion of the first layer, which second layer is imprinted with the patterned features; (c) removing at least portions of the second layer to extend the patterned features to the first layer; and (d) removing at least portions of the first layer to extend the patterned features to the substrate; wherein the first layer and the second layer may be exposed to an etching process that undercuts the patterned features, and the first material may be lifted-off.
摘要翻译：本发明的一个实施例是一种用于在衬底上产生图案化特征的方法，其包括：（a）在衬底的表面的至少一部分上形成第一层，第一层包括至少一层第一材料其中一层邻接衬底的表面; （b）在所述第一层的至少一部分上形成第二材料的第二层，所述第二层被印刷所述图案化特征; （c）去除所述第二层的至少一部分以将所述图案化特征延伸到所述第一层; 和（d）去除所述第一层的至少一部分以将所述图案化特征延伸到所述基底; 其中第一层和第二层可以暴露于蚀刻过程，其蚀刻图案化的特征，并且第一材料可以被剥离。

6. 发明授权

US08889332B2 Low-K dielectric functional imprinting materials 有权
标题翻译：低K电介质功能压印材料
公开(公告)号：US08889332B2
公开(公告)日：2014-11-18
申请号：US13172350
申请日：2011-06-29
申请人： Frank Y. Xu , Jun Sung Chun , Michael P. C. Watts
发明人： Frank Y. Xu , Jun Sung Chun , Michael P. C. Watts
IPC分类号： G03F7/028 , G03F7/038 , G03F7/075
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L21/76817 , H01L21/7682 , H01L2221/1047 , Y10T428/24545 , Y10T428/24612
摘要： A polymerizable composition includes an organic modified silicate selected from the group consisting of silsesquioxanes having the composition RSiO1.5, partially condensed alkoxysilanes, organically modified silicates having the composition RSiO3 and R2SiO2, and partially condensed orthosilicates having the composition SiOR4, where R is an organic substituent; a decomposable organic compound; a photoinitiator; and a release agent. The composition polymerizes upon exposure to UV radiation to form an inorganic silica network, and the decomposable organic compound decomposes upon exposure to heat to form pores in the inorganic silica network. The composition may be used to form a patterned dielectric layer in an integrated circuit device. A metallic film may be disposed on the patterned dielectric layer and then planarized.
摘要翻译：可聚合组合物包括选自组成为RSiO 1.5的倍半硅氧烷，部分缩合的烷氧基硅烷，具有组成为RSiO 3和R 2 SiO 2的有机改性硅酸盐和具有组成SiOR 4的部分缩合的原硅酸盐的有机改性硅酸盐，其中R是有机取代基; 可分解的有机化合物; 光引发剂; 和脱模剂。组合物在暴露于UV辐射下聚合以形成无机二氧化硅网络，并且可分解有机化合物在暴露于热量时分解，以在无机二氧化硅网络中形成孔隙。组合物可以用于在集成电路器件中形成图案化的介电层。金属膜可以设置在图案化的介电层上，然后平坦化。

7. 发明授权

US08076386B2 Materials for imprint lithography 有权
标题翻译：压印光刻材料
公开(公告)号：US08076386B2
公开(公告)日：2011-12-13
申请号：US10784911
申请日：2004-02-23
申请人： Frank Y. Xu , Michael P. C. Watts , Nicholas A. Stacey
发明人： Frank Y. Xu , Michael P. C. Watts , Nicholas A. Stacey
IPC分类号： C08J7/16 , C08J7/18 , C08K3/00 , C08K5/54 , C08K5/541
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , C09D11/101
摘要： The present invention is directed to a material for use in imprint lithography that features a composition having a viscosity associated therewith and including a surfactant, a polymerizable component, and an initiator responsive to a stimuli to vary the viscosity in response thereto, with the composition, in a liquid state, having the viscosity being lower than about 100 centipoises, a vapor pressure of less than about 20 Torr, and in a solid cured state a tensile modulus of greater than about 100 MPa, a break stress of greater than about 3 MPa and an elongation at break of greater than about 2%.
摘要翻译：本发明涉及一种用于压印光刻的材料，其特征在于具有与之相关的粘度的组合物，并且包括表面活性剂，可聚合组分和响应于刺激物的引发剂以响应于其而改变粘度，在液体状态下，其粘度低于约100厘泊，蒸气压小于约20托，并且在固体固化状态下，拉伸模量大于约100MPa，断裂应力大于约3MPa 并且断裂伸长率大于约2％。

8. 发明授权

US07157036B2 Method to reduce adhesion between a conformable region and a pattern of a mold 有权
标题翻译：降低适形区域和模具图案之间粘合的方法
公开(公告)号：US07157036B2
公开(公告)日：2007-01-02
申请号：US10463396
申请日：2003-06-17
申请人： Byung Jin Choi , Frank Y. Xu , Nicholas A. Stacey , Van Xuan Hong Truskett , Michael P. C. Watts
发明人： Byung Jin Choi , Frank Y. Xu , Nicholas A. Stacey , Van Xuan Hong Truskett , Michael P. C. Watts
IPC分类号： B29C59/00 , B29C33/60
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： The present invention provides a method to reduce adhesion between a conformable region on a substrate and a pattern of a mold, which selectively comes into contact with the conformable region. The method features forming a conformable material on the substrate and contacting the conformable material with the surface. A conditioned layer is formed from the conformable material. The conditioned layer has first and second sub-portions, with the first sub-portion being solidified and the second sub-portion having a first affinity for the surface and a second affinity for the first sub-portion. The first affinity is greater than the second affinity. In this fashion, upon separation of the mold from the conditioned layer, a subset of the second sub-portion maintains contact with the mold, thereby reducing the probability that a pattern formed in the conditioned layer becomes compromised. These and other embodiments are described herein.
摘要翻译：本发明提供一种降低基材上的适形区域和选择性地与适形区域接触的模具图案之间的粘附性的方法。该方法的特征在于在基底上形成适形材料并使适形材料与表面接触。由适形材料形成调理层。调理层具有第一和第二子部分，其中第一子部分被固化，第二子部分对于表面具有第一亲和力，对第一子部分具有第二亲和力。第一亲和力大于第二亲和力。以这种方式，在模具与调理层分离时，第二子部分的子集保持与模具的接触，从而降低在调理层中形成的图案变得损害的可能性。这些和其他实施例在本文中描述。

9. 发明授权

US07122079B2 Composition for an etching mask comprising a silicon-containing material 有权
标题翻译：包含含硅材料的蚀刻掩模的组合物
公开(公告)号：US07122079B2
公开(公告)日：2006-10-17
申请号：US10789319
申请日：2004-02-27
申请人： Frank Y. Xu , Michael N. Miller , Michael P. C. Watts
发明人： Frank Y. Xu , Michael N. Miller , Michael P. C. Watts
IPC分类号： C08L83/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： The present invention includes a composition for a silicon-containing material used as an etch mask for underlying layers. More specifically, the silicon-containing material may be used as an etch mask for a patterned imprinted layer comprising protrusions and recessions. To that end, in one embodiment of the present invention, the composition includes a hydroxyl-functional silicone component, a cross-linking component, a catalyst component, and a solvent. This composition allows the silicon-containing material to selectively etch the protrusions and the segments of the patterned imprinting layer in superimposition therewith, while minimizing the etching of the segments in superposition with the recessions, and therefore allowing an in-situ hardened mask to be created by the silicon-containing material, with the hardened mask and the patterned imprinting layer forming a substantially planarized profile.
摘要翻译：本发明包括用作下层的蚀刻掩模的含硅材料用组合物。更具体地，含硅材料可以用作包括突起和凹陷的图案化印记层的蚀刻掩模。为此，在本发明的一个实施方案中，组合物包括羟基官能的硅氧烷组分，交联组分，催化剂组分和溶剂。该组合物允许含硅材料与图案化压印层的突起和段的叠加选择性地蚀刻，同时最小化与凹陷叠加的段的蚀刻，并且因此允许形成原位硬化的掩模通过含硅材料，硬化的掩模和图案化的压印层形成基本平坦化的轮廓。

10. 发明授权

US07906180B2 Composition for an etching mask comprising a silicon-containing material 有权
标题翻译：包含含硅材料的蚀刻掩模的组合物
公开(公告)号：US07906180B2
公开(公告)日：2011-03-15
申请号：US11508765
申请日：2006-08-23
申请人： Frank Y. Xu , Michael N. Miller , Michael P. C. Watts
发明人： Frank Y. Xu , Michael N. Miller , Michael P. C. Watts
IPC分类号： B05D3/02 , C08L9/04
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： The present invention includes a composition for a silicon-containing material used as an etch mask for underlying layers. More specifically, the silicon-containing material may be used as an etch mask for a patterned imprinted layer comprising protrusions and recessions. To that end, in one embodiment of the present invention, the composition includes a hydroxyl-functional silicone component, a cross-linking component, a catalyst component, and a solvent. This composition allows the silicon-containing material to selectively etch the protrusions and the segments of the patterned imprinting layer in superimposition therewith, while minimizing the etching of the segments in superposition with the recessions, and therefore allowing an in-situ hardened mask to be created by the silicon-containing material, with the hardened mask and the patterned imprinting layer forming a substantially planarized profile.
摘要翻译：本发明包括用作下层的蚀刻掩模的含硅材料用组合物。更具体地，含硅材料可以用作包括突起和凹陷的图案化印记层的蚀刻掩模。为此，在本发明的一个实施方案中，组合物包括羟基官能的硅氧烷组分，交联组分，催化剂组分和溶剂。该组合物允许含硅材料与图案化压印层的突起和段的叠加选择性地蚀刻，同时最小化与凹陷叠加的段的蚀刻，并且因此允许形成原位硬化的掩模通过含硅材料，硬化的掩模和图案化的压印层形成基本平坦化的轮廓。

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