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1. 发明申请

US20070212849A1 Method of fabricating a groove-like structure in a semiconductor device 审中-公开
标题翻译：在半导体器件中制造凹槽状结构的方法
公开(公告)号：US20070212849A1
公开(公告)日：2007-09-13
申请号：US11373064
申请日：2006-03-10
申请人： Frank Ludwig , Kimberly Wilson , Arabinda Das , Hans-Peter Sperlich , Andreas Klipp , Kristin Schupke
发明人： Frank Ludwig , Kimberly Wilson , Arabinda Das , Hans-Peter Sperlich , Andreas Klipp , Kristin Schupke
IPC分类号： H01L21/76
CPC分类号： H01L21/76229
摘要： The present invention relates to a method of fabricating a groove-like structure in a semiconductor device including etching a trench in a substrate, filling the trench with a spin-on-glass liquid forming a spin-on-glass liquid layer containing a solvent, baking the spin-on-glass liquid layer in order to remove the solvent and forming a baked layer, etching the baked layer to a predetermined depth using an etchant that provides a larger etch rate with regard to silicon than with regard to silicon nitride or silicon oxide, and, after etching the baked layer, annealing the remaining baked layer and forming a spin-on-glass oxide layer inside the trench.
摘要翻译：本发明涉及一种在半导体器件中制造凹槽状结构的方法，包括蚀刻衬底中的沟槽，用形成包含溶剂的旋涂玻璃液体层的旋涂玻璃液填充沟槽，烘烤旋涂玻璃液体层以除去溶剂并形成烘烤层，使用提供相对于硅的蚀刻速率比硅相对于氮化硅或硅的蚀刻剂将烘焙层蚀刻到预定深度并且在蚀刻所述烘烤层之后，对所述剩余的烘烤层进行退火并在所述沟槽内形成旋涂玻璃氧化物层。

2. 发明授权

US07265023B2 Fabrication method for a semiconductor structure 有权
标题翻译：半导体结构的制造方法
公开(公告)号：US07265023B2
公开(公告)日：2007-09-04
申请号：US11099962
申请日：2005-04-06
申请人： Moritz Haupt , Andreas Klipp , Hans-Peter Sperlich , Momtchill Stavrev , Stephan Wege
发明人： Moritz Haupt , Andreas Klipp , Hans-Peter Sperlich , Momtchill Stavrev , Stephan Wege
IPC分类号： H01L21/76
CPC分类号： H01L21/76232
摘要： The present invention provides a fabrication method for a semiconductor structure having the steps of providing a semiconductor substrate (1); providing and patterning a silicon nitride layer (3) on the semiconductor substrate (1) as topmost layer of a trench etching mask; forming a trench (5) in a first etching step by means of the trench etching mask; conformally depositing a liner layer (10) made of silicon oxide above the resulting structure, which leaves a gap (SP) reaching into the depth in the trench (5); carrying out a V plasma etching step for forming a V profile of the line layer (10) in the trench (5); wherein the liner layer (10) is pulled back to below the top side of the silicon nitride layer (3); an etching gas mixture comprises C5F8, O2 and an inert gas is used in the V plasma etching step; the ratio (V) of C5F8/O2 lies between 2.5 and 3.5; and the selectivity of the V plasma etching step between silicon oxide and silicon nitride is at least 10.
摘要翻译：本发明提供一种半导体结构的制造方法，其具有提供半导体衬底（1）的步骤。在半导体衬底（1）上提供和图案化氮化硅层（3）作为沟槽蚀刻掩模的最顶层; 在第一蚀刻步骤中通过沟槽蚀刻掩模形成沟槽（5）; 在所得结构上保形地沉积由氧化硅制成的衬垫层（10），留下在沟槽（5）中深入的间隙（SP）; 进行用于在沟槽（5）中形成线层（10）的V轮廓的V等离子体蚀刻步骤; 其中所述衬垫层（10）被拉回到所述氮化硅层（3）的顶侧的下方; 蚀刻气体混合物包括C 5 C 8 O 2 O 2，在V等离子体蚀刻步骤中使用惰性气体; C 5 / C 2 O 2的比例（V）在2.5和3.5之间; 并且氧化硅和氮化硅之间的V等离子体蚀刻步骤的选择性为至少10。

3. 发明申请

US20050245042A1 Fabrication method for a semiconductor structure 有权
标题翻译：半导体结构的制造方法
公开(公告)号：US20050245042A1
公开(公告)日：2005-11-03
申请号：US11099962
申请日：2005-04-06
申请人： Moritz Haupt , Andreas Klipp , Hans-Peter Sperlich , Momtchil Stavrev , Stephan Wege
发明人： Moritz Haupt , Andreas Klipp , Hans-Peter Sperlich , Momtchil Stavrev , Stephan Wege
IPC分类号： H01L21/3065 , H01L21/762 , H01L21/8234 , H01L21/8242
CPC分类号： H01L21/76232
摘要： The present invention provides a fabrication method for a semiconductor structure having the steps of providing a semiconductor substrate (1); providing and patterning a silicon nitride layer (3) on the semiconductor substrate (1) as topmost layer of a trench etching mask; forming a trench (5) in a first etching step by means of the trench etching mask; conformally depositing a liner layer (10) made of silicon oxide above the resulting structure, which leaves a gap (SP) reaching into the depth in the trench (5); carrying out a V plasma etching step for forming a V profile of the line layer (10) in the trench (5); wherein the liner layer (10) is pulled back to below the top side of the silicon nitride layer (3); an etching gas mixture comprises C5F8, O2 and an inert gas is used in the V plasma etching step; the ratio (V) of C5F8/O2 lies between 2.5 and 3.5; and the selectivity of the V plasma etching step between silicon oxide and silicon nitride is at least 10.
摘要翻译：本发明提供一种半导体结构的制造方法，其具有提供半导体衬底（1）的步骤。在半导体衬底（1）上提供和图案化氮化硅层（3）作为沟槽蚀刻掩模的最顶层; 在第一蚀刻步骤中通过沟槽蚀刻掩模形成沟槽（5）; 在所得结构上保形地沉积由氧化硅制成的衬垫层（10），留下在沟槽（5）中深入的间隙（SP）; 执行V等离子体蚀刻步骤，用于在沟槽（5）中形成线层（10）的V轮廓; 其中所述衬垫层（10）被拉回到所述氮化硅层（3）的顶侧的下方; 蚀刻气体混合物包括C 5 C 8 O 2 O 2，在V等离子体蚀刻步骤中使用惰性气体; C 5 / C 2 O 2的比例（V）在2.5和3.5之间; 并且氧化硅和氮化硅之间的V等离子体蚀刻步骤的选择性为至少10。

4. 发明授权

US09184057B2 Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less 有权
标题翻译：用于制造集成电路器件，光学器件，微机械和机械精密器件的方法，其具有线间距尺寸为50nm以下的图案化材料层
公开(公告)号：US09184057B2
公开(公告)日：2015-11-10
申请号：US14005746
申请日：2012-02-29
申请人： Andreas Klipp , Guenter Oetter , Sabrina Montero Pancera , Andrei Honciuc , Christian Bittner
发明人： Andreas Klipp , Guenter Oetter , Sabrina Montero Pancera , Andrei Honciuc , Christian Bittner
IPC分类号： G03F7/32 , G03F7/40 , H01L21/308 , G03F7/20
CPC分类号： H01L21/3083 , G03F7/2041 , G03F7/322 , G03F7/405
摘要： A method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm and less and aspect ratios of >2; (2) providing the surface of the patterned material layers with a positive or a negative electrical charge by contacting the substrate at least once with an aqueous, fluorine-free solution S containing at least one fluorine-free cationic surfactant A having at least one cationic or potentially cationic group, at least one fluorine-free anionic surfactant A having at least one anionic or potentially anionic group, or at least one fluorine-free amphoteric surfactant A; and (3) removing the aqueous, fluorine-free solution S from the contact with the substrate.
摘要翻译：一种用于制造集成电路器件，光学器件，微机械和机械精密器件的方法，所述方法包括以下步骤：（1）提供具有线间距尺寸为50nm或更小的纵向比为> 2的图案化材料层的衬底 ; （2）通过使衬底与含有至少一种具有至少一个阳离子的至少一种无氟阳离子表面活性剂A的含水无氟溶液S接触至少一次来提供正电荷或负电荷的表面，或潜在的阳离子基团，至少一种具有至少一个阴离子或潜在阴离子基团的至少一种无氟阴离子表面活性剂A或至少一种无氟两性表面活性剂A; 和（3）从与基板的接触中除去无水的无水溶液S.

5. 发明授权

US08927476B2 Aqueous alkaline cleaning compositions and methods of their use 有权
标题翻译：水性碱性清洗组合物及其使用方法
公开(公告)号：US08927476B2
公开(公告)日：2015-01-06
申请号：US13805891
申请日：2011-07-12
申请人： Raimund Mellies , Andreas Klipp
发明人： Raimund Mellies , Andreas Klipp
IPC分类号： C11D1/62 , C11D3/34 , C11D3/06 , C11D3/20 , C11D3/30 , C11D3/37 , C11D11/00 , C11D1/34
CPC分类号： C11D3/349 , C11D1/345 , C11D1/66 , C11D1/667 , C11D1/72 , C11D3/0073 , C11D3/06 , C11D3/2068 , C11D3/2086 , C11D3/30 , C11D3/3757 , C11D3/378 , C11D11/0017 , C11D11/0041 , C11D11/0047 , C11D11/0064 , H01L21/02074 , H05K3/1208 , H05K2203/0793
摘要： Aqueous alkaline composition free from organic solvents and metal ion-free silicates, the said compositions comprising (A) a thioamino acid having at least one primary amino group and at least one mercapto group, (B) a quaternary ammonium hydroxide, (C) a chelating and/or corrosion inhibiting agent selected from the group consisting of aliphatic and cycloaliphatic amines having at least two primary amino groups, and aliphatic and cycloaliphatic amines having at least one hydroxy group, (D) a nonionic surfactant selected from the group of acetylenic alcohols, alkyloxylated acetylenic alcohols and alkyloxylated sorbitan monocarboxylic acid mono esters; the use of the alkaline composition for the processing of substrates useful for fabricating electrical and optical devices; and a method for processing substrates useful for fabricating electrical and optical devices making use of the said aqueous alkaline composition.
摘要翻译：所述组合物包含（A）具有至少一个伯氨基和至少一个巯基的硫代氨基酸，（B）季铵氢氧化物，（C）螯合和/或腐蚀抑制剂，其选自具有至少两个伯氨基的脂族和脂环族胺，以及具有至少一个羟基的脂族和脂环族胺，（D）选自炔属醇类的非离子表面活性剂，烷氧基化炔醇和烷氧基化脱水山梨醇单羧酸单酯; 使用碱性组合物来处理可用于制造电气和光学器件的衬底; 以及用于处理用于制造使用所述含水碱性组合物的电气和光学器件的衬底的方法。

6. 发明授权

US09275851B2 Aqueous, nitrogen-free cleaning composition and its use for removing residues and contaminants from semiconductor substrates suitable for manufacturing microelectronic devices 有权
标题翻译：水性无氮清洁组合物及其用于从适合制造微电子器件的半导体衬底去除残余物和污染物的用途
公开(公告)号：US09275851B2
公开(公告)日：2016-03-01
申请号：US14006617
申请日：2012-02-28
申请人： Andreas Klipp , Vijay Immanuel Raman , Shyam Sundar Venkataraman , Raimund Mellies , Mingjie Zhong
发明人： Andreas Klipp , Vijay Immanuel Raman , Shyam Sundar Venkataraman , Raimund Mellies , Mingjie Zhong
IPC分类号： C11D1/72 , C11D1/722 , C11D3/20 , H01L21/02 , C11D3/37 , C11D1/66 , C11D3/00 , C11D1/825 , C11D11/00 , G03F7/42
CPC分类号： H01L21/02074 , C11D1/662 , C11D1/72 , C11D1/721 , C11D1/722 , C11D1/825 , C11D3/0073 , C11D3/2041 , C11D3/2065 , C11D3/2082 , C11D3/3757 , C11D11/0047 , G03F7/422 , G03F7/426
摘要： Aqueous, nitrogen-free cleaning composition, preparation and use thereof are provided. The composition having a pH of from 5 to 8 comprises (A) an amphiphilic nonionic, water-soluble or water-dispersible surfactant and (B) a metal chelating agent selected from polycarboxylic acids having at least 3 carboxylic acid groups. The composition is used for removing residues and contaminants from semiconductor substrates.
摘要翻译：提供了无水的无氮清洁组合物，其制备和用途。具有5至8的pH的组合物包含（A）两亲性非离子，水溶性或水分散性表面活性剂和（B）选自具有至少3个羧酸基团的多元羧酸的金属螯合剂。该组合物用于从半导体衬底去除残留物和污染物。

7. 发明授权

US09146471B2 Resist stripping compositions and methods for manufacturing electrical devices 有权
标题翻译：抗剥离组合物和制造电气装置的方法
公开(公告)号：US09146471B2
公开(公告)日：2015-09-29
申请号：US13319187
申请日：2010-04-20
申请人： Andreas Klipp
发明人： Andreas Klipp
IPC分类号： G03F7/42 , H01L21/302 , G03F7/20 , H01L21/02 , H01L21/311
CPC分类号： G03F7/425 , G03F7/20 , H01L21/02063 , H01L21/31133
摘要： A liquid composition free from N-alkylpyrrolidones and hydroxyl amine and its derivatives, having a dynamic shear viscosity at 50° C. of from 1 to 10 mPas as measured by rotational viscometry and comprising based on the complete weight of the composition, (A) of from 40 to 99.95% by weight of a polar organic solvent exhibiting in the presence of dissolved tetramethylammonium hydroxide (B) a constant removal rate at 50° C. for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) of from 0.05 to
摘要翻译：一种不含N-烷基吡咯烷酮和羟胺及其衍生物的液体组合物，其在50℃下的动态剪切粘度为1至10mPas，通过旋转粘度测定测量，并包含基于组合物的完整重量，（A）在溶解的四甲基氢氧化铵（B）的存在下显示的极性有机溶剂的40至99.95重量％，对于含有深UV吸收发色团的30nm厚的聚合物屏障抗反射层，在50℃下的恒定去除速率，（B）为0.05至0.5％的季铵氢氧化物，和（C）<5重量％的水; 其制备方法，用于制造电子器件的方法及其用于消除负色调和正色调光致抗蚀剂以及在制造3D堆叠集成电路和3D晶片级封装中的后蚀刻残留物的用途，通过图案化通过硅通孔和/ 或通过电镀和碰撞。

8. 发明申请

US20130157919A1 AQUEOUS ALKALINE CLEANING COMPOSITIONS AND METHODS OF THEIR USE 有权
标题翻译：水性碱性清洁组合物及其使用方法
公开(公告)号：US20130157919A1
公开(公告)日：2013-06-20
申请号：US13805891
申请日：2011-07-12
申请人： Raimund Mellies , Andreas Klipp
发明人： Raimund Mellies , Andreas Klipp
IPC分类号： C11D3/34
CPC分类号： C11D3/349 , C11D1/345 , C11D1/66 , C11D1/667 , C11D1/72 , C11D3/0073 , C11D3/06 , C11D3/2068 , C11D3/2086 , C11D3/30 , C11D3/3757 , C11D3/378 , C11D11/0017 , C11D11/0041 , C11D11/0047 , C11D11/0064 , H01L21/02074 , H05K3/1208 , H05K2203/0793
摘要： Aqueous alkaline cleaning composition free from organic solvents and metal ion-free silicates, the said compositions comprising (A) a thioamino acid having at least one primary amino group and at least one mercapto group, (B) a quaternary ammonium hydroxide, (C) a chelating and/or corrosion inhibiting agent selected from the group consisting of aliphatic and cycloaliphatic amines having at least two primary amino groups, and aliphatic and cycloaliphatic amines having at least one hydroxy group, (D) a nonionic surfactant selected from the group of acetylenic alcohols, alkyloxylated acetylenic alcohols and alkyloxylated sorbitan monocarboxylic acid mono esters; the use of the alkaline cleaning composition for the processing of substrates useful for fabricating electrical and optical devices; and a method for processing substrates useful for fabricating electrical and optical devices making use of the said aqueous alkaline cleaning composition.
摘要翻译：所述组合物包含（A）具有至少一个伯氨基和至少一个巯基的硫代氨基酸，（B）季铵氢氧化物，（C）选自具有至少两个伯氨基的脂族和脂环族胺和具有至少一个羟基的脂族和脂环族胺的螯合和/或腐蚀抑制剂，（D）选自炔属的非离子表面活性剂醇，烷氧基乙炔醇和烷氧基化脱水山梨糖醇单羧酸单酯; 使用碱性清洁组合物来处理可用于制造电气和光学装置的基底; 以及用于处理用于制造使用所述含水碱性清洁组合物的电气和光学装置的基板的方法。

9. 发明申请

US20120058644A1 RESIST STRIPPING COMPOSITIONS AND METHODS FOR MANUFACTURING ELECTRICAL DEVICES 有权
标题翻译：电阻剥离组合物和制造电气装置的方法
公开(公告)号：US20120058644A1
公开(公告)日：2012-03-08
申请号：US13319187
申请日：2010-04-20
申请人： Andreas Klipp
发明人： Andreas Klipp
IPC分类号： H01L21/302 , G03F7/42
CPC分类号： G03F7/425 , G03F7/20 , H01L21/02063 , H01L21/31133
摘要： A liquid composition free from N-alkylpyrrolidones and hydroxyl amine and its derivatives, having a dynamic shear viscosity at 50° C. of from 1 to 10 mPas as measured by rotational viscometry and comprising based on the complete weight of the composition, (A) of from 40 to 99.95% by weight of a polar organic solvent exhibiting in the presence of dissolved tetramethylammonium hydroxide (B) a constant removal rate at 50° C. for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) of from 0.05 to
摘要翻译：一种不含N-烷基吡咯烷酮和羟胺及其衍生物的液体组合物，其在50℃下的动态剪切粘度为1至10mPas，通过旋转粘度测定测量，并包含基于组合物的完整重量，（A）在溶解的四甲基氢氧化铵（B）的存在下显示的极性有机溶剂的40至99.95重量％，对于含有深UV吸收发色团的30nm厚的聚合物屏障抗反射层，在50℃下的恒定去除速率，（B）为0.05至0.5％的季铵氢氧化物，和（C）<5重量％的水; 其制备方法，用于制造电子器件的方法及其用于消除负色调和正色调光致抗蚀剂以及在制造3D堆叠集成电路和3D晶片级封装中的后蚀刻残留物的用途，通过图案化通过硅通孔和/ 或通过电镀和碰撞。

10. 发明申请

US20110046314A1 LOW-K DIELECTRICS OBTAINABLE BY TWIN POLYMERIZATION 有权
标题翻译：通过双聚合获得的低K电介质
公开(公告)号：US20110046314A1
公开(公告)日：2011-02-24
申请号：US12989665
申请日：2009-04-28
申请人： Andreas Klipp , Arno Lange , Hans-Joachim Haehnle
发明人： Andreas Klipp , Arno Lange , Hans-Joachim Haehnle
IPC分类号： C08L85/00 , C08L83/00 , C08L85/04
CPC分类号： H01B3/441 , C08G77/00 , C08J9/26 , C08J2383/00
摘要： The invention relates to a dielectric layer with a permittivity of 3.5 or less comprising a dielectric obtainable by polymerizing at least one twin monomer comprising a) a first monomer unit which comprises a metal or semimetal, and b) a second monomer unit which is connected to the first monomer unit via a chemical bond, wherein the polymerization involves polymerizing the twin monomer with breakage of the chemical bond and formation of a first polymer comprising the first monomer unit and of a second polymer comprising the second monomer unit, and wherein the first and the second monomer unit polymerize via a common mechanism.
摘要翻译：本发明涉及介电常数为3.5或更低的电介质层，其包含通过聚合至少一种双单体得到的电介质，该电介质包含：a）包含金属或半金属的第一单体单元，以及b）第二单体单元，其连接到所述第一单体单元经由化学键，其中所述聚合涉及使所述双体单体聚合，所述化学键断裂并形成包含所述第一单体单元的第一聚合物和包含所述第二单体单元的第二聚合物，并且其中所述第一和第二单体单元通过公共机构聚合。

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