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1. 发明授权

US5135838A Resist materials 失效
标题翻译：抵抗材料
公开(公告)号：US5135838A
公开(公告)日：1992-08-04
申请号：US565074
申请日：1990-08-09
申请人： Francis M. Houlihan , Thomas X. Neenan , Elsa Reichmanis
发明人： Francis M. Houlihan , Thomas X. Neenan , Elsa Reichmanis
IPC分类号： G03F7/039
CPC分类号： G03F7/039 , Y10S430/146
摘要： A class of resist compositions sensitive to deep ultraviolet radiation includes a resin sensitive to acid and a composition that generates acid upon exposure to such radiation. A group of nitrobenzyl materials is particularly suitable for use as the acid generator.
摘要翻译：一类对深紫外线辐射敏感的抗蚀剂组合物包括对酸敏感的树脂和暴露于这种辐射时产生酸的组合物。一组硝基苄基材料特别适合用作酸产生剂。

2. 发明授权

US5200544A Resist materials 失效
标题翻译：抵抗材料
公开(公告)号：US5200544A
公开(公告)日：1993-04-06
申请号：US825341
申请日：1992-01-24
申请人： Francis M. Houlihan , Thomas X. Neenan , Elsa Reichmanis
发明人： Francis M. Houlihan , Thomas X. Neenan , Elsa Reichmanis
IPC分类号： G03F7/039
CPC分类号： G03F7/039
摘要： A class of resist compositions sensitive to deep ultraviolet radiation includes a resin sensitive to acid and a composition that generates acid upon exposure to such radiation. A group of nitrobenzyl materials is particularly suitable for use as the acid generator.
摘要翻译：一类对深紫外线辐射敏感的抗蚀剂组合物包括对酸敏感的树脂和暴露于这种辐射时产生酸的组合物。一组硝基苄基材料特别适合用作酸产生剂。

3. 发明授权

US4996136A Radiation sensitive materials and devices made therewith 失效
标题翻译：辐射敏感材料和由此制成的设备
公开(公告)号：US4996136A
公开(公告)日：1991-02-26
申请号：US316051
申请日：1989-02-24
申请人： Francis M. Houlihan , Elsa Reichmanis , Larry F. Thompson
发明人： Francis M. Houlihan , Elsa Reichmanis , Larry F. Thompson
IPC分类号： G03F7/039
CPC分类号： G03F7/039 , Y10S430/146
摘要： Sensitive deep ultraviolet resists are formed utilizing a material that undergoes decomposition to form an acid together with a polymer including a chain scission inducing monomer such as sulfonyl units and substituent that undergoes reaction to form an acidic moiety when subjected to the photogenerated species. An exemplary composition includes poly(t-butoxycarbonyloxystyrenesulfone) and 2,6-dinitrobenzyl-p-toluene sulfonate. The sulfonate decomposes to form sulfonic acid upon irradiation. This acid reacts with the polymer group to form an acid functionality while the sulfone moiety of the polymer induces scission. As a result, the irradiated portions of the resist material are soluble in ionic solvents while the unirradiated portions are not.
摘要翻译：敏感的深紫外线抗蚀剂是利用经历分解形成酸的材料与含有断链诱导单体如磺酰基单元的聚合物形成的物质，并且当经受光生物质时经历反应以形成酸性部分的取代基。示例性的组合物包括聚（叔丁氧基羰基氧基苯乙烯）和2,6-二硝基苄基对甲苯磺酸盐。在辐照时磺酸盐分解形成磺酸。该酸与聚合物基团反应以形成酸官能团，而聚合物的砜部分诱导断裂。结果，抗蚀剂材料的照射部分可溶于离子溶剂，而未照射部分则不溶解。

4. 发明授权

US07537879B2 Photoresist composition for deep UV and process thereof 失效
标题翻译：用于深紫外线的光致抗蚀剂组合物及其工艺
公开(公告)号：US07537879B2
公开(公告)日：2009-05-26
申请号：US10994745
申请日：2004-11-22
申请人： Francis M. Houlihan , Ralph R. Dammel , Andrew R. Romano , Munirathna Padmanaban , M. Dalil Rahman
发明人： Francis M. Houlihan , Ralph R. Dammel , Andrew R. Romano , Munirathna Padmanaban , M. Dalil Rahman
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38 , G03C1/73
CPC分类号： G03F7/0392 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： The present invention relates to a novel chemically amplified photoresist, which is sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a novel polymer comprising a sulfone group pendant from a polymer backbone that is insoluble in an aqueous alkaline solution and comprises at least one acidic moiety protected with acid labile group, and b) a compound capable of producing an acid upon irradiation. The invention also relates to a process of imaging the novel positive photoresist composition.
摘要翻译：本发明涉及一种对300nm至100nm之间的波长敏感的新型化学放大光致抗蚀剂，并且包括a）一种新型聚合物，其包含不溶于碱性水溶液的聚合物主链的侧基的砜基，用酸不稳定基团保护的至少一个酸性部分，和b）在照射时能够产生酸的化合物。本发明还涉及对新型正性光致抗蚀剂组合物进行成像的方法。

5. 发明申请

US20110076626A1 Positive-Working Photoimageable Bottom Antireflective Coating 有权
标题翻译：正面照相底部防反射涂层
公开(公告)号：US20110076626A1
公开(公告)日：2011-03-31
申请号：US12570923
申请日：2009-09-30
申请人： Munirathna Padmanaban , Srinivasan Chakrapani , Francis M. Houlihan , Shinji Miyazaki , Edward Ng , Mark O. Neisser
发明人： Munirathna Padmanaban , Srinivasan Chakrapani , Francis M. Houlihan , Shinji Miyazaki , Edward Ng , Mark O. Neisser
IPC分类号： G03F7/00 , G03C1/00
CPC分类号： G03F7/091
摘要： The invention relates to a photoimageable antireflective coating composition capable of forming a pattern by development in an aqueous alkaline solution, comprising, (i) a polymer A soluble in a coating solvent and comprises a chromophore, a crosslinking moiety, and optionally a cleavable group which under acid or thermal conditions produces a functionality which aids in the solubility of the polymer in an aqueous alkaline solution and; (ii) at least one photoacid generator; (iii) a crosslinking agent; (iv) optionally, a thermal acid generator; (v) a polymer B which is soluble in an aqueous alkaline solution prior to development, where polymer B is non-miscible with polymer A and soluble in the coating solvent, and; (vi) a coating solvent composition, and (vii) optionally, a quencher. The invention also relates to a process for imaging the antireflective coating.
摘要翻译：本发明涉及能够在碱性水溶液中通过显影形成图案的可光成像抗反射涂料组合物，其包含（i）可溶于涂布溶剂中的聚合物A，其包含发色团，交联部分和任选的可裂解基团，在酸或热条件下产生有助于聚合物在碱性水溶液中的溶解度的功能; （ii）至少一种光致酸发生剂; （iii）交联剂; （iv）任选的热酸产生剂; （v）聚合物B，其在显影前可溶于碱性水溶液，其中聚合物B与聚合物A不可混溶并可溶于涂布溶剂中; （vi）涂料溶剂组合物，和（vii）任选的猝灭剂。本发明还涉及用于对抗反射涂层进行成像的方法。

6. 发明授权

US07473512B2 Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof 有权
标题翻译：用顶部涂层及其材料对深紫外光致抗蚀剂进行成像的工艺
公开(公告)号：US07473512B2
公开(公告)日：2009-01-06
申请号：US11044305
申请日：2005-01-27
申请人： Francis M. Houlihan , Ralph R. Dammel , Andrew R. Romano , Raj Sakamuri
发明人： Francis M. Houlihan , Ralph R. Dammel , Andrew R. Romano , Raj Sakamuri
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/11
摘要： The present invention relates to a process for imaging deep ultraviolet (uv) photoresists with a topcoat using deep uv immersion lithography. The invention further relates to a topcoat composition comprising a polymer with at least one ionizable group having a pKa ranging from about −9 to about 11. The invention also relates to a process for imaging a photoresist with a top barrier coat to prevent contamination of the photoresist from environmental contaminants.
摘要翻译：本发明涉及一种使用深紫外浸没式光刻技术对具有顶涂层的深紫外（UV）光刻胶进行成像的方法。本发明还涉及一种面漆组合物，其包含具有至少一个pKa在约-9至约11范围内的至少一个可离子化基团的聚合物。本发明还涉及一种使用顶部阻挡涂层对光致抗蚀剂进行成像的方法，以防止光致抗蚀剂来自环境污染物。

7. 发明授权

US07211366B2 Photoresist composition for deep ultraviolet lithography 失效
标题翻译：用于深紫外光刻的光刻胶组合物
公开(公告)号：US07211366B2
公开(公告)日：2007-05-01
申请号：US10658840
申请日：2003-09-09
申请人： Ralph R. Dammel , Raj Sakamuri , Francis M. Houlihan
发明人： Ralph R. Dammel , Raj Sakamuri , Francis M. Houlihan
IPC分类号： G03F7/004
CPC分类号： G03F7/0046 , G03F7/0395 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： The present invention relates to a photoresist composition comprising a photoacid generator and at least one polymer comprising at least one unit as described by structure 1, The invention also relates to a process for imaging the photoresist composition of the present invention, and to a process of making the polymer in the presence of an organic base.
摘要翻译：本发明涉及一种光致抗蚀剂组合物，其包含光致酸产生剂和至少一种包含至少一种如结构1所述的单元的聚合物。本发明还涉及用于使本发明的光致抗蚀剂组合物成像的方法，以及使聚合物在有机碱存在下进行。

8. 发明申请

US20090104559A1 Bottom Antireflective Coating Compositions 有权
标题翻译：底部防反射涂料组合物
公开(公告)号：US20090104559A1
公开(公告)日：2009-04-23
申请号：US11876793
申请日：2007-10-23
申请人： Francis M. Houlihan , Shinjl Miyazaki , Mark O. Neisser , Alberto D. Dioses , Joseph E. Oberlander
发明人： Francis M. Houlihan , Shinjl Miyazaki , Mark O. Neisser , Alberto D. Dioses , Joseph E. Oberlander
IPC分类号： G03C1/73 , C07C55/02 , C07C59/245 , C07C59/305 , G03F7/20 , C07C61/08 , C07C63/14 , C07C63/337
CPC分类号： C07C211/05 , C07C55/08 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/091 , G03F7/095
摘要： Developable bottom antireflective coating compositions are provided.
摘要翻译：提供可开发的底部抗反射涂料组合物。

9. 发明授权

US07351521B2 Photoresist composition for deep ultraviolet lithography 失效
标题翻译：用于深紫外光刻的光刻胶组合物
公开(公告)号：US07351521B2
公开(公告)日：2008-04-01
申请号：US11716361
申请日：2007-03-09
申请人： Ralph R. Dammel , Raj Sakamuri , Francis M. Houlihan
发明人： Ralph R. Dammel , Raj Sakamuri , Francis M. Houlihan
IPC分类号： G03F7/30 , G03F7/021
CPC分类号： G03F7/0395 , G03F7/0046
摘要： The present invention relates to a photoresist composition comprising a photoacid generator and at least one polymer comprising at least one unit as described by structure 1, The invention also relates to a process for imaging the photoresist composition of the present invention, and to a process of making the polymer in the presence of an organic base.
摘要翻译：本发明涉及一种光致抗蚀剂组合物，其包含光致酸产生剂和至少一种包含至少一种如结构1所述的单元的聚合物。本发明还涉及用于使本发明的光致抗蚀剂组合物成像的方法，以及使聚合物在有机碱存在下进行。

10. 发明授权

US07042645B2 Micro-lens array and method of making micro-lens array 有权
标题翻译：微透镜阵列及制作微透镜阵列的方法
公开(公告)号：US07042645B2
公开(公告)日：2006-05-09
申请号：US10740600
申请日：2003-12-22
申请人： Francis M. Houlihan , Madanagopal V. Kunnavakkam , James A. Liddle , Omkaram Nalamasu
发明人： Francis M. Houlihan , Madanagopal V. Kunnavakkam , James A. Liddle , Omkaram Nalamasu
IPC分类号： G02B27/00
CPC分类号： G02B3/0031 , G02B3/0056
摘要： A micro-lens array and a method for making are described. The micro-lens array includes a base element and a plurality of lenses formed of an epoxy and including nanoparticles. The micro-lens array is formed from a master micro-lens array, which is placed within a replica micro-lens making assembly. The master micro-lens array is coated with an anti-stiction material prior to having an elastomeric material positioned over it and cured. Removal of the elastomeric material provides a plurality of cavities, which are filled with an epoxy including nanoparticles. Curing of the epoxy finishes the fabrication of the micro-lens array. The lenses of the micro-lens array are formed from a colloidal suspension of nanoparticles and resin.
摘要翻译：描述微透镜阵列和制造方法。微透镜阵列包括基底元件和由环氧树脂形成并包括纳米颗粒的多个透镜。微透镜阵列由放置在复制微透镜制造组件内的主微透镜阵列形成。主微透镜阵列在将抗弹性材料定位在其上并固化之前用抗静电材料涂覆。去除弹性体材料提供多个空腔，其填充有包括纳米颗粒的环氧树脂。环氧树脂的固化完成了微透镜阵列的制造。微透镜阵列的透镜由纳米颗粒和树脂的胶态悬浮液形成。

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