会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明申请
    • COMPOSITE LAYER AND FABRICATION METHOD THEREOF
    • 复合层及其制造方法
    • US20100209702A1
    • 2010-08-19
    • US12431565
    • 2009-04-28
    • Feng-Yu TsaiChih-Yu ChangYun-Jun Lee
    • Feng-Yu TsaiChih-Yu ChangYun-Jun Lee
    • B32B15/04C23C16/44
    • C23C16/405C23C16/40C23C16/403C23C16/45529Y10T428/265
    • The invention provides a method for forming a composite membrane, including: (a) loading a substrate into a chamber; (b) performing a first cycle step in the chamber to form a single aluminum oxide (Al2O3) layer; and (c) performing a second cycle step in the chamber to form a single hafnium oxide (HfO2) layer. The steps include: (1) introducing an Al element containing a first reactant into the chamber; (2) removing the first reactant from the chamber; (3) introducing an O element containing a second reactant into the chamber; (4) removing the second reactant from the chamber; (5) introducing an Hf element containing a third reactant into the chamber; and (6) removing the third reactant from the chamber. The first cycle step is composed of steps (1) to (4), and the second cycle step is composed of steps (3) to (6).
    • 本发明提供一种形成复合膜的方法,包括:(a)将基材装载到室中; (b)在室中进行第一循环步骤以形成单一的氧化铝(Al2O3)层; 和(c)在室中进行第二循环步骤以形成单一的氧化铪(HfO 2)层。 步骤包括:(1)将含有第一反应物的Al元素引入到室中; (2)从室中除去第一反应物; (3)将含有第二反应物的O元素引入所述室中; (4)从室中除去第二反应物; (5)将含有第三反应物的Hf元素引入所述室中; 和(6)从室中除去第三反应物。 第一循环步骤由步骤(1)至(4)组成,第二循环步骤由步骤(3)至(6)组成。
    • 7. 发明授权
    • Method for forming a transparent conductive film by atomic layer deposition
    • 通过原子层沉积形成透明导电膜的方法
    • US08329253B2
    • 2012-12-11
    • US12683437
    • 2010-01-07
    • Feng-Yu TsaiChun-Ting Chou
    • Feng-Yu TsaiChun-Ting Chou
    • C23C16/40
    • H01B1/08C23C14/221C23C16/40C23C16/405C23C16/407C23C16/45529C23C16/45531
    • A method for forming a transparent conductive film by atomic layer deposition includes providing more than one kind of oxide precursor which is individually introduced into atomic layer deposition equipment through different sources, wherein the oxide precursors are consecutively introduced into the atomic layer deposition equipment at the same time, so that the oxide precursors are simultaneously present in the atomic layer deposition equipment, to form a uniform mixture of oxide precursors in a single adsorbate layer for settling onto a substrate in the atomic layer deposition equipment. Then, an oxidant is provided to react with the oxide precursors to form a single multi-oxide atomic layer. The above mentioned steps are repeated to form a plurality of multi-oxide atomic layers.
    • 通过原子层沉积形成透明导电膜的方法包括提供多种一种氧化物前体,其通过不同的源单独引入到原子层沉积设备中,其中氧化物前体连续地引入原子层沉积设备中 时间,使得氧化物前体同时存在于原子层沉积设备中,以在单个吸附物层中形成均匀的氧化物前体混合物,以沉淀到原子层沉积设备中的基底上。 然后,提供氧化剂以与氧化物前体反应以形成单个多氧化物原子层。 重复上述步骤以形成多个多氧化物原子层。