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1. 发明申请

US20090146115A1 PROCESS FOR PREPARING A POSITIVE ELECTRODE MATERIAL FOR LITHIUM ION BATTERY 有权
标题翻译：制备锂离子电池正极电极材料的方法
公开(公告)号：US20090146115A1
公开(公告)日：2009-06-11
申请号：US12091796
申请日：2006-03-03
申请人： Feng Xiao , Jianchang Zhang , Wenyu Cao , Dengwei Liu
发明人： Feng Xiao , Jianchang Zhang , Wenyu Cao , Dengwei Liu
IPC分类号： H01B1/22
CPC分类号： H01M4/622 , C01G45/1228 , C01G51/006 , C01G51/50 , C01G53/006 , C01G53/50 , C01P2002/52 , C01P2002/54 , C01P2002/72 , C01P2004/51 , C01P2006/11 , C01P2006/40 , H01M4/0471 , H01M4/1391 , H01M4/505 , H01M4/525 , H01M4/621 , H01M2004/021
摘要： A process for preparing lithium-nickel-manganese-cobalt composite oxide used as a positive electrode material for the lithium ion battery, comprising subjecting a mixture containing a lithium compound and nickel-manganese-cobalt hydroxide to a first-stage sintering and a second-stage sintering, wherein said process further comprises adding a binder and/or binder solution after the first-stage sintering, and the mixture of the binder and/or binder solution and the product of first-stage sintering is sintered in said second-stage sintering. The tap density and volume specific capacity of the positive electrode material lithium-nickel-manganese-cobalt composite oxide prepared by the present process, come up to 2.4 g/cm3 and 416.4 mAh/cm3, respectively. Besides, the positive electrode material lithium-nickel-manganese-cobalt composite oxide prepared by the present process possesses the advantages of high specific capacity and good cycle stability.
摘要翻译：一种用作锂离子电池正极材料的锂镍锰钴复合氧化物的制备方法，包括将含有锂化合物和镍锰 - 氢氧化钴的混合物进行第一阶段烧结，其中所述方法还包括在第一阶段烧结之后添加粘合剂和/或粘合剂溶液，并且在所述第二阶段烧结中将粘合剂和/或粘合剂溶液与第一阶段烧结产物的混合物烧结。通过本方法制备的正极材料锂镍锰钴复合氧化物的振实密度和体积比容量分别达到2.4g / cm 3和416.4mAh / cm 3。此外，通过本方法制备的正极材料锂镍锰钴复合氧化物具有高比容量和良好的循环稳定性的优点。

2. 发明授权

US07887721B2 Process for preparing a positive electrode material for lithium ion battery 有权
标题翻译：锂离子电池正极材料的制备方法
公开(公告)号：US07887721B2
公开(公告)日：2011-02-15
申请号：US12091796
申请日：2006-03-03
申请人： Feng Xiao , Jianchang Zhang , Wenyu Cao , Dengwei Liu
发明人： Feng Xiao , Jianchang Zhang , Wenyu Cao , Dengwei Liu
IPC分类号： H01B1/02
CPC分类号： H01M4/622 , C01G45/1228 , C01G51/006 , C01G51/50 , C01G53/006 , C01G53/50 , C01P2002/52 , C01P2002/54 , C01P2002/72 , C01P2004/51 , C01P2006/11 , C01P2006/40 , H01M4/0471 , H01M4/1391 , H01M4/505 , H01M4/525 , H01M4/621 , H01M2004/021
摘要： A process for preparing lithium-nickel-manganese-cobalt composite oxide used as a positive electrode material for the lithium ion battery, comprising subjecting a mixture containing a lithium compound and nickel-manganese-cobalt hydroxide to a first-stage sintering and a second-stage sintering. The process includes adding a binder and/or binder solution after the first-stage sintering, and the mixture of the binder and/or binder solution and the product of first-stage sintering is sintered in the second-stage sintering. The tap density and volume specific capacity of the positive electrode material lithium-nickel-manganese-cobalt composite oxide prepared by the process, come up to 2.4 g/cm3 and 416.4 mAh/cm3, respectively. Besides, the positive electrode material lithium-nickel-manganese-cobalt composite oxide prepared by the process possesses the advantages of high specific capacity and good cycle stability.
摘要翻译：一种用作锂离子电池正极材料的锂镍锰钴复合氧化物的制备方法，包括将含有锂化合物和镍锰 - 氢氧化钴的混合物进行第一阶段烧结，阶段烧结。该方法包括在第一阶段烧结之后加入粘合剂和/或粘合剂溶液，并在第二阶段烧结中烧结粘合剂和/或粘合剂溶液与第一阶段烧结产物的混合物。通过该方法制备的正极材料锂镍锰钴复合氧化物的振实密度和体积比容量分别达到2.4g / cm 3和416.4mAh / cm 3。此外，通过该方法制备的正极材料锂镍锰钴复合氧化物具有高比容量和良好的循环稳定性的优点。

3. 发明申请

US20090252668A1 Methods For Preparing Iron Source Material And Ferrous Oxalate for Lithium Ferrous Phosphate 审中-公开
标题翻译：磷酸铁锂铁源和草酸亚铁的制备方法
公开(公告)号：US20090252668A1
公开(公告)日：2009-10-08
申请号：US12176319
申请日：2008-07-18
申请人： Wenyu Cao , Shuiyuan Zhang , Feng Xiao
发明人： Wenyu Cao , Shuiyuan Zhang , Feng Xiao
IPC分类号： C01B25/30
CPC分类号： C01B25/45 , H01M4/5825 , H01M10/052
摘要： Methods for preparing iron source material and ferrous oxalate for lithium ferrous phosphate are disclosed. One method comprises bringing solution containing ferrite and soluble non-ferrous metal salts in contact with oxalate solution; wherein said method of contact is to allow a flow of the ferrite solution containing ferrite and soluble non-ferrous metal salts to come in contact with a flow of oxalate solution. Another method comprises brings a stream of ferrite solution in contact with a stream of oxalate solution, wherein the flow rates of the ferrite solution and oxalate solution give the resulting slurry a pH of 2-6. The ferrous oxalate particles produces by the methods of the present invention are regularly shaped and have small and evenly distributed diameters. Lithium ferrous phosphate made from iron source material and ferrous oxalate prepared using the methods of the present invention has small particle diameter, homogeneous particle size, good electrical conductivity, and superior electrochemical properties.
摘要翻译：公开了用于制备磷酸亚铁的铁源材料和草酸亚铁的方法。一种方法包括将含铁素体和可溶性有色金属盐的溶液与草酸盐溶液接触; 其中所述接触方法是允许含有铁素体和可溶性有色金属盐的铁素体溶液与草酸溶液流接触。另一种方法包括使铁酸盐溶液与草酸溶液流接触，其中铁酸盐溶液和草酸溶液的流速使得到的浆料的pH为2-6。通过本发明的方法生产的草酸亚铁颗粒是规则形状的并且具有小且均匀分布的直径。由本发明方法制备的由铁源材料和草酸亚铁制成的磷酸亚铁锂具有粒径小，粒径均匀，导电性好，电化学性能优异的特点。

4. 发明申请

US20120015505A1 METHOD AND DEVICE FOR PREPARING COMPOUND SEMICONDUCTOR FILM 有权
标题翻译：用于制备化合物半导体膜的方法和装置
公开(公告)号：US20120015505A1
公开(公告)日：2012-01-19
申请号：US13258174
申请日：2010-03-25
申请人： Beijun Zhong , Wenyu Cao , Yong Zhou , Zhanfeng Jiang
发明人： Beijun Zhong , Wenyu Cao , Yong Zhou , Zhanfeng Jiang
IPC分类号： H01L21/20 , C23C16/458 , C23C16/455
CPC分类号： H01L21/02568 , C23C14/0623 , C23C14/225 , C23C14/24 , C23C14/505 , H01L21/02422 , H01L21/02491 , H01L21/02631 , H01L31/0322 , H01L31/03923 , H01L31/03925 , H01L31/04 , H01L31/18 , H01L31/1828 , Y02E10/541 , Y02E10/543
摘要： The present invention discloses a method and a device for preparing a compound semiconductor film. The method comprises the steps of: providing a substrate above at least an evaporation source in a vacuum condition; heating a source material contained in the evaporation source so that the source material is vapor-deposited on the substrate; and taking out the substrate under protection of an inert gas. The substrate may be rotated around an axis of a plane where the evaporation source is positioned, and the substrate is tilted by a predetermined angle with respect to the plane. The compound semi-conductive film thus prepared has a uniform thickness with a larger area. The method provides a simplified process and enhanced efficiency.
摘要翻译：本发明公开了一种制备化合物半导体膜的方法和装置。该方法包括以下步骤：在真空状态下至少提供一个至少一个蒸发源的基板; 加热包含在蒸发源中的源材料，使得源材料气相沉积在基底上; 并在惰性气体保护下取出基材。衬底可以围绕蒸发源所在的平面的轴线旋转，并且衬底相对于平面倾斜预定的角度。如此制备的复合半导体膜具有均匀的厚度，面积更大。该方法提供了简化的过程并提高了效率。

5. 发明申请

US20100221901A1 METHOD FOR PREPARING CADMIUM SULFIDE FILM 审中-公开
标题翻译：制备硫化铝膜的方法
公开(公告)号：US20100221901A1
公开(公告)日：2010-09-02
申请号：US12712881
申请日：2010-02-25
申请人： Zhiju Cai , Wenyu Cao , Yong Zhou
发明人： Zhiju Cai , Wenyu Cao , Yong Zhou
IPC分类号： H01L21/20
CPC分类号： H01L21/02631 , C23C14/0629 , C23C14/24 , C23C14/5806 , H01L21/02557 , H01L31/1828 , Y02E10/543
摘要： A method for preparing a cadmium sulfide film comprises: providing a slurry; coating a first substrate with the slurry; heating the first substrate to produce a vapor; and depositing the vapor on a second substrate to form a cadmium sulfide film. The slurry comprises a dispersant, cadmium particles and sulfur particles.
摘要翻译：制备硫化镉膜的方法包括：提供浆料; 用浆料涂覆第一基材; 加热第一衬底以产生蒸气; 并将蒸气沉积在第二衬底上以形成硫化镉膜。浆料包括分散剂，镉颗粒和硫颗粒。

6. 发明授权

US08470692B2 Method and device for preparing compound semiconductor film 有权
标题翻译：化合物半导体膜的制备方法和装置
公开(公告)号：US08470692B2
公开(公告)日：2013-06-25
申请号：US13258174
申请日：2010-03-25
申请人： Beijun Zhong , Wenyu Cao , Yong Zhou , Zhanfeng Jiang
发明人： Beijun Zhong , Wenyu Cao , Yong Zhou , Zhanfeng Jiang
IPC分类号： H01L21/322 , H01L21/469 , H01L21/31 , H01L21/461 , H01L21/44
CPC分类号： H01L21/02568 , C23C14/0623 , C23C14/225 , C23C14/24 , C23C14/505 , H01L21/02422 , H01L21/02491 , H01L21/02631 , H01L31/0322 , H01L31/03923 , H01L31/03925 , H01L31/04 , H01L31/18 , H01L31/1828 , Y02E10/541 , Y02E10/543
摘要： The present invention discloses a method and a device for preparing a compound semiconductor film. The method comprises the steps of: providing a substrate above at least an evaporation source in a vacuum condition; heating a source material contained in the evaporation source so that the source material is vapor-deposited on the substrate; and taking out the substrate under protection of an inert gas. The substrate may be rotated around an axis of a plane where the evaporation source is positioned, and the substrate is tilted by a predetermined angle with respect to the plane. The compound semi-conductive film thus prepared has a uniform thickness with a larger area. The method provides a simplified process and enhanced efficiency.
摘要翻译：本发明公开了一种制备化合物半导体膜的方法和装置。该方法包括以下步骤：在真空状态下至少提供一个至少一个蒸发源的基板; 加热包含在蒸发源中的源材料，使得源材料气相沉积在基底上; 并在惰性气体保护下取出基材。衬底可以围绕蒸发源所在的平面的轴线旋转，并且衬底相对于平面倾斜预定的角度。如此制备的复合半导体膜具有均匀的厚度，面积更大。该方法提供了简化的过程并提高了效率。

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