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1. 发明申请

US20090273734A1 Structure of light emitting device array 审中-公开
标题翻译：发光元件阵列的结构
公开(公告)号：US20090273734A1
公开(公告)日：2009-11-05
申请号：US12435400
申请日：2009-05-04
申请人： Feng Li , Gang Xu , Bingwen Liang , Chen-Jean Chou
发明人： Feng Li , Gang Xu , Bingwen Liang , Chen-Jean Chou
IPC分类号： G02F1/13357
CPC分类号： G02B6/0078 , G02B6/002 , G02B6/0038 , G02F2001/133601
摘要： A LCD backlight with mosaic structure is provided. Each of the backlight unit blocks comprises light sources, light guide plate, electric controlling circuitry and mechanical interfacing features.
摘要翻译：提供具有马赛克结构的LCD背光。每个背光单元块包括光源，导光板，电控制电路和机械接口特征。

2. 发明申请

US20090273594A1 Apparatus and drive method for light emitting device array 审中-公开
标题翻译：发光元件阵列的装置和驱动方法
公开(公告)号：US20090273594A1
公开(公告)日：2009-11-05
申请号：US12436111
申请日：2009-05-05
申请人： Feng Li , Gang Xu , Bingwen Liang , Chen-Jean Chou
发明人： Feng Li , Gang Xu , Bingwen Liang , Chen-Jean Chou
IPC分类号： G09G3/14 , G09G5/00
CPC分类号： G09G3/3406 , G09G2310/0237 , G09G2320/0233
摘要： A system and drive method for compensating intensity variation due to variation of operating cycles in a dynamically controlled system comprising a plurality of light emitting devices are provided in this invention.
摘要翻译：在本发明中提供了一种用于在包括多个发光器件的动态控制系统中补偿由于操作周期变化引起的强度变化的系统和驱动方法。

3. 发明申请

US20090219735A1 Structure for light emitting device array 审中-公开
标题翻译：发光元件阵列结构
公开(公告)号：US20090219735A1
公开(公告)日：2009-09-03
申请号：US12396442
申请日：2009-03-02
申请人： Feng Li , Gang Xu , Bingwen Liang , Chen-Jean Chou
发明人： Feng Li , Gang Xu , Bingwen Liang , Chen-Jean Chou
IPC分类号： F21V8/00
CPC分类号： G02B6/0023 , G02B6/0031 , G02B6/0056
摘要： Structure for polarized light source suitable for the application of flat panel display is provided.
摘要翻译：提供了适用于平板显示器应用的偏振光源的结构。

4. 再颁专利

USRE42636E1 Window for gallium nitride light emitting diode 有权
标题翻译：氮化镓发光二极管窗口
公开(公告)号：USRE42636E1
公开(公告)日：2011-08-23
申请号：US12662196
申请日：2010-04-05
申请人： John Chen , Bingwen Liang , Robert Shih
发明人： John Chen , Bingwen Liang , Robert Shih
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/02 , H01L33/14 , H01L33/32
摘要： A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiOx/Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.
摘要翻译：用于氮化镓（GaN）的发光二极管（LED）的窗结构包括GaN化合物的Mg +掺杂p窗口层; 薄的半透明金属接触层; 以及形成在所述接触层上的非晶电流扩散层。接触层由NiOx / Au形成，电流扩散层由氧化铟锡形成。二极管的p电极包括与电流扩展层形成欧姆连接的钛粘合层和与Mg +掺杂窗口层的肖特基二极管连接。

5. 发明授权

US06897494B1 GaN light emitting diode with conductive outer layer 有权
标题翻译：具有导电外层的GaN发光二极管
公开(公告)号：US06897494B1
公开(公告)日：2005-05-24
申请号：US09626443
申请日：2000-07-26
申请人： John Chen , Bingwen Liang , Robert Shih
发明人： John Chen , Bingwen Liang , Robert Shih
IPC分类号： H01L33/14 , H01L33/30 , H01L33/38 , H01L33/00
CPC分类号： H01L33/14 , H01L33/30 , H01L33/38
摘要： A GaN based LED comprises: a three layer buffer which is a template for growth of a high quality I GaN platform for quality growth of subsequent layers; a light emitting structure; and complementary N and P electrode structures which spread current flowing between the electrodes fully across the light emitting structure.
摘要翻译：基于GaN的LED包括：三层缓冲器，其是用于生长高质量I GaN平台的模板，用于后续层的质量生长; 发光结构; 以及互补的N和P电极结构，其扩散电流在电极之间完全跨越发光结构。

6. 发明授权

US06580096B2 Window for light-emitting diode 有权
标题翻译：发光二极管窗口
公开(公告)号：US06580096B2
公开(公告)日：2003-06-17
申请号：US10167698
申请日：2002-06-13
申请人： John Chen , Bingwen Liang , Robert Shih
发明人： John Chen , Bingwen Liang , Robert Shih
IPC分类号： H01L2715
CPC分类号： H01L33/38 , H01L33/10 , H01L33/14 , H01L33/16 , H01L33/30
摘要： A light-emitting diode (LED) constructed of AlGaInP compounds includes a multi-layer window having, in the order of formation, a lightly doped first layer formed of p doped GaP; a low impedance second layer formed of p GaAs; an amorphous conducting layer formed of Indium Tin Oxide (ITO), and a titanium/gold contact. In one embodiment, the contact forms ohmic connections with the second and third layers; and a Schottky diode connection with the first layer. In a second embodiment, the contact forms an ohmic connection with the third layer; and is insulated from direct contact with the first layer.
摘要翻译：由AlGaInP化合物构成的发光二极管（LED）包括多层窗口，其按顺序形成由p掺杂的GaP形成的轻掺杂的第一层; 由p GaAs形成的低阻抗第二层; 由铟锡氧化物（ITO）形成的非晶导电层和钛/金接触。在一个实施例中，触点与第二和第三层形成欧姆连接; 和与第一层的肖特基二极管连接。在第二实施例中，触点与第三层形成欧姆连接; 并且与第一层直接接触绝缘。

7. 发明授权

US06420736B1 Window for gallium nitride light emitting diode 有权
标题翻译：氮化镓发光二极管窗口
公开(公告)号：US06420736B1
公开(公告)日：2002-07-16
申请号：US09626445
申请日：2000-07-26
申请人： John Chen , Bingwen Liang , Robert Shih
发明人： John Chen , Bingwen Liang , Robert Shih
IPC分类号： H01L3300
CPC分类号： H01L33/42 , H01L33/02 , H01L33/14 , H01L33/32
摘要： A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiOx/Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.
摘要翻译：用于氮化镓（GaN）的发光二极管（LED）的窗结构包括GaN化合物的Mg +掺杂p窗口层; 薄的半透明金属接触层; 以及形成在所述接触层上的非晶电流扩散层。接触层由NiOx / Au形成，电流扩散层由氧化铟锡形成。二极管的p电极包括与电流扩展层形成欧姆连接的钛粘合层和与Mg +掺杂窗口层的肖特基二极管连接。

8. 发明授权

US06643304B1 Transparent substrate light emitting diode 有权
标题翻译：透明基板发光二极管
公开(公告)号：US06643304B1
公开(公告)日：2003-11-04
申请号：US09626444
申请日：2000-07-26
申请人： John Chen , Bingwen Liang , Robert Shih
发明人： John Chen , Bingwen Liang , Robert Shih
IPC分类号： H01S500
CPC分类号： H01L33/46
摘要： A Gallium Nitride based Light Emitting Diode (LED) includes both a transparent substrate and a window for exiting light generated by the LED. Useful amounts of light may be utilized at the face of the window or at the face of the transparent substrate. An external optical reflector is formed directly on the external face of the LED which is not currently being used to exit useful light. If light from the window is being utilized, a Distributed Bragg Reflector (DBR) is formed directly on the “backside” of the substrate. However, if light through the substrate is being utilized, a Distributed Bragg Reflector is formed directly on the light emitting portion of the window.
摘要翻译：基于氮化镓的发光二极管（LED）包括透明基板和用于退出由LED产生的光的窗口。可以在窗口的正面或透明基板的表面使用有用量的光。直接在LED的外表面上形成外部光学反射器，该外部面并不用于退出有用的光。如果使用来自窗口的光，则直接在基板的“背面”上形成分布式布拉格反射器（DBR）。然而，如果利用通过基板的光，则分布式布拉格反射器直接形成在窗口的发光部分上。

9. 发明授权

US06642549B2 Method of forming a window for a gallium nitride light emitting diode 有权
标题翻译：形成氮化镓发光二极管窗口的方法
公开(公告)号：US06642549B2
公开(公告)日：2003-11-04
申请号：US10197614
申请日：2002-07-15
申请人： John Chen , Bingwen Liang , Robert Shih
发明人： John Chen , Bingwen Liang , Robert Shih
IPC分类号： H01L3300
CPC分类号： H01L33/42 , H01L33/02 , H01L33/14 , H01L33/32
摘要： A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiOx/Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.
摘要翻译：用于氮化镓（GaN）的发光二极管（LED）的窗结构包括GaN化合物的Mg +掺杂p窗口层; 薄的半透明金属接触层; 以及形成在所述接触层上的非晶电流扩散层。接触层由NiOx / Au形成，电流扩散层由氧化铟锡形成。二极管的p电极包括与电流扩展层形成欧姆连接的钛粘合层和与Mg +掺杂窗口层的肖特基二极管连接。

10. 发明授权

US06459098B1 Window for light emitting diode 有权
标题翻译：发光二极管窗
公开(公告)号：US06459098B1
公开(公告)日：2002-10-01
申请号：US09626441
申请日：2000-07-26
申请人： John Chen , Bingwen Liang , Robert Shih
发明人： John Chen , Bingwen Liang , Robert Shih
IPC分类号： H01L2715
CPC分类号： H01L33/38 , H01L33/10 , H01L33/14 , H01L33/16 , H01L33/30
摘要： A Light Emitting Diode (LED) constructed of AlGaInP compounds includes a multi layer window which improves the efficiency of the diode. The window, in the order of formation, includes a lightly doped first layer formed of p doped GaP; a low impedance second layer formed of p GaAs; an amorphous conducting layer formed of Indium Tin Oxide (ITO), and a titanium\gold contact. In one embodiment, the contact forms ohmic connections with the second and third layers; and a Shottky diode connection with first layer. In a second embodiment, the contact forms an ohmic connection with the third layer; and is insulated from direct contact with the first layer.
摘要翻译：由AlGaInP化合物构成的发光二极管（LED）包括提高二极管效率的多层窗口。窗口按顺序形成包括由p掺杂的GaP形成的轻掺杂的第一层; 由p GaAs形成的低阻抗第二层; 由氧化铟锡（ITO）形成的非晶导电层和钛\金接触。在一个实施例中，触点与第二和第三层形成欧姆连接; 和第一层的肖特基二极管连接。在第二实施例中，触点与第三层形成欧姆连接; 并且与第一层直接接触绝缘。

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