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1. 发明申请

US20170306038A1 COMPOSITIONS AND METHODS OF USE FOR AUGMENTED IMMUNE RESPONSE AND CANCER THERAPY 审中-公开
公开(公告)号：US20170306038A1
公开(公告)日：2017-10-26
申请号：US15517872
申请日：2015-10-08
申请人： Jennifer BROGDON , Daniela CIPOLLETTA , Glenn DRANOFF , Deborah A. KNEE , Fei WANG
发明人： Jennifer BROGDON , Daniela CIPOLLETTA , Glenn DRANOFF , Deborah A. KNEE , Fei WANG
IPC分类号： C07K16/28 , A61K45/06 , A61K39/00
摘要： The present invention provides antibody compositions, including, e.g., antibodies, engineered antibodies and antibody fragments that bind to a tumor necrosis factor receptor superfamily member (i.e., 18), and compositions comprising one or more additional therapeutic agents. Provided compositions are useful in enhancing CD4+ and CD8+ T cell responses, and in the treatment, amelioration and prevention of diseases that can be counteracted with an augmented immune response, e.g., cancers. Also provided are methods of use of combinations that find use in treatment or prevention of cancerous or infectious conditions and disorders.

2. 发明申请

US20170162689A1 SGT MOSFET WITH ADJUSTABLE CRSS AND CISS 审中-公开
公开(公告)号：US20170162689A1
公开(公告)日：2017-06-08
申请号：US14957570
申请日：2015-12-02
申请人： Jun Hu , Zhiyun LUO , Fei WANG , Mengyu PAN
发明人： Jun Hu , Zhiyun LUO , Fei WANG , Mengyu PAN
IPC分类号： H01L29/78 , H01L21/3213 , H01L29/40 , H01L29/66 , H01L29/10
CPC分类号： H01L29/7813 , H01L21/32139 , H01L29/1095 , H01L29/401 , H01L29/407 , H01L29/42372 , H01L29/66734 , H01L29/7811
摘要： A semiconductor power device includes a plurality of power transistor cells each having a trenched gate disposed in a gate trench opened in a semiconductor substrate wherein a plurality of the trenched gates further include a shielded bottom electrode disposed in a bottom portion of the gate trench electrically insulated from a top gate electrode disposed at a top portion of the gate trench by an inter-electrode insulation layer. At least one of the shielded bottom electrode is connected a source metal and at least one of the top electrodes in the gate trench is connected to a source metal of the power device.

3. 发明申请

US20120276706A1 DAMASCENE METAL-INSULATOR-METAL (MIM) DEVICE IMPROVED SCALEABILITY 有权
标题翻译：大金属金属绝缘体 - 金属（MIM）器件改进的可扩展性
公开(公告)号：US20120276706A1
公开(公告)日：2012-11-01
申请号：US13529284
申请日：2012-06-21
申请人： Suzette K. PANGRLE , Steven AVANZINO , Sameer HADDAD , Michael VANBUSKIRK , Manuj RATHOR , James XIE , Kevin SONG , Christie MARRIAN , Bryan CHOO , Fei WANG , Jeffery A. SHIELDS
发明人： Suzette K. PANGRLE , Steven AVANZINO , Sameer HADDAD , Michael VANBUSKIRK , Manuj RATHOR , James XIE , Kevin SONG , Christie MARRIAN , Bryan CHOO , Fei WANG , Jeffery A. SHIELDS
IPC分类号： H01L21/02
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1633 , H01L45/1675 , H01L45/1683
摘要： A present method of fabricating a memory device includes the steps of providing a dielectric layer;, providing an opening in the dielectric layer, providing a first conductive body in the opening, providing a switching body in the opening, the first conductive body and switching body Filling the opening, and providing a second conductive body over the switching body. In an alternate embodiment, a second dielectric layer is provided over the first-mentioned dielectric layer, and the switching body is provided in an opening in the second dielectric layer.
摘要翻译：本发明的制造存储器件的方法包括以下步骤：提供电介质层;在电介质层中提供开口，在开口中提供第一导电体，在开口中提供开关体，第一导电体和开关体填充开口，并在开关体上设置第二导电体。在替代实施例中，在第一介电层上提供第二电介质层，并且开关体设置在第二电介质层的开口中。

4. 发明申请

US20120057329A1 ELECTRODE PLATE FOR EXTERNAL ELECTRODE LAMP AND BACKLIGHT 有权
标题翻译：用于外部电极灯和背光的电极板
公开(公告)号：US20120057329A1
公开(公告)日：2012-03-08
申请号：US13223470
申请日：2011-09-01
申请人： Fei WANG , Laiyou CUI , Zhanchang BU , Fang KANG , You LI
发明人： Fei WANG , Laiyou CUI , Zhanchang BU , Fang KANG , You LI
IPC分类号： F21V21/00 , H01R33/02
CPC分类号： H01J65/046
摘要： An electrode plate for an external electrode fluorescent lamp and a backlight are disclosed. The electrode plate for external electrode lamp comprising a strip pressure plate made of conductive material, wherein the strip pressure plate comprises a first surface on which at least one groove are provided and a second surface that is opposite to the first surface, the grooves run across both sides of the first surface and accommodate external electrodes of the external electrode lamps.
摘要翻译：公开了一种用于外部电极荧光灯和背光源的电极板。一种用于外部电极灯的电极板，包括由导电材料制成的带状压板，其中所述带状压板包括第一表面，所述第一表面设置有至少一个凹槽和与所述第一表面相对的第二表面，第一表面的两侧并且容纳外部电极灯的外部电极。

5. 发明申请

US20090278173A1 MEMORY DEVICE INTERCONNECTS AND METHOD OF MANUFACTURING 有权
标题翻译：存储器件互连和制造方法
公开(公告)号：US20090278173A1
公开(公告)日：2009-11-12
申请号：US12116200
申请日：2008-05-06
申请人： Shenqing FANG , Connie WANG , Wen YU , Fei WANG
发明人： Shenqing FANG , Connie WANG , Wen YU , Fei WANG
IPC分类号： H01L29/66 , H01L21/4763
CPC分类号： H01L23/528 , H01L21/76807 , H01L21/76813 , H01L27/115 , H01L27/11519 , H01L27/11524 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit memory device, in one embodiment, includes a substrate having a plurality of bit lines. A first and second inter-level dielectric layer are successively disposed on the substrate. Each of a plurality of source lines and staggered bit line contacts extend through the first inter-level dielectric layer. Each of a plurality of source line vias and a plurality of staggered bit line vias extend through the second inter-level dielectric layer to each respective one of the plurality of source lines and the plurality of staggered bit line contacts. The source lines and staggered bit line contacts that extend through the first inter-level dielectric layer are formed together by a first set of fabrication processes. The source line vias and staggered bit line contacts that extend through the second inter-level dielectric layer are also formed together by a second set of fabrication processes.
摘要翻译：在一个实施例中，集成电路存储器件包括具有多个位线的衬底。第一和第二层间电介质层依次设置在基板上。多个源极线和交错位线触点中的每一个延伸穿过第一层间电介质层。多个源极线路通孔和多个交错位线通孔中的每一条通过第二级间介电层延伸到多条源极线路和多条交错位线触点中的每一个。通过第一组制造工艺一起形成延伸穿过第一层间电介质层的源极线和交错位线触点。延伸穿过第二层间电介质层的源极线通孔和交错位线触点也通过第二组制造工艺一起形成。

6. 发明公开

US20230141646A1 SHOWER SET 审中-公开
公开(公告)号：US20230141646A1
公开(公告)日：2023-05-11
申请号：US17747742
申请日：2022-05-18
申请人： Fei WANG
发明人： Fei WANG
IPC分类号： A61C17/032 , A61C17/02 , E03C1/04 , E03C1/042
CPC分类号： A61C17/032 , A61C17/0202 , E03C1/0408 , E03C1/042
摘要： The shower set includes a water outlet end and an oral irrigator. A water inlet of the oral irrigator communicates with the water outlet end; to cause the oral irrigator to spray water received from the water outlet end out of the oral irrigator under the action of a water level or water pressure of the water outlet end. The technical problem in the related art of inconvenient use of an oral irrigator during showering is resolved.

7. 发明申请

US20130192795A1 COOLING SYSTEM HAVING ANTI-RECIRCULATION FEATURE 审中-公开
标题翻译：具有抗再生特性的冷却系统
公开(公告)号：US20130192795A1
公开(公告)日：2013-08-01
申请号：US13362580
申请日：2012-01-31
申请人： Suryanarayana R. GADHIRAJU , Fei WANG , Ryan D. LOOPER , Brian V. BLUNIER
发明人： Suryanarayana R. GADHIRAJU , Fei WANG , Ryan D. LOOPER , Brian V. BLUNIER
IPC分类号： F01P7/10
CPC分类号： B60K11/04 , B60K11/08 , B60R2019/525 , F01P11/10
摘要： A cooling system is disclosed for use with an engine. The cooling system may have a heat exchanger fluidly connectable to the engine, and a fan situated adjacent the heat exchanger and configured to generate a flow of air through the heat exchanger. The cooling system may also include an anti-recirculation feature located adjacent the fan and configured to block the flow of air at a center of the fan and allow air to flow at a periphery of the fan.
摘要翻译：公开了一种用于发动机的冷却系统。冷却系统可以具有可流体连接到发动机的热交换器，以及位于热交换器附近并被配置为产生通过热交换器的空气流的风扇。冷却系统还可以包括邻近风扇定位的防再循环特征并且被配置为阻挡风扇中心处的空气流并允许空气在风扇的周边流动。

8. 发明申请

US20110250749A1 INTERCONNECTS WITH IMPROVED ELECTROMIGRATION RELIABILITY 有权
标题翻译：具有改善电动机可靠性的互连
公开(公告)号：US20110250749A1
公开(公告)日：2011-10-13
申请号：US13166988
申请日：2011-06-23
申请人： Jun ZHAI , Fei WANG
发明人： Jun ZHAI , Fei WANG
IPC分类号： H01L21/768
CPC分类号： H01L23/53238 , H01L23/528 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure in a semiconductor device may be formed to include a number of segments. Each segment may include a first metal. A barrier structure may be located between the plurality of segments to enable the interconnect structure to avoid electromigration problems.
摘要翻译：半导体器件中的互连结构可以形成为包括多个段。每个段可以包括第一金属。阻挡结构可以位于多个段之间，以使得互连结构能够避免电迁移问题。

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