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    • 1. 发明申请
    • DETERMINISTIC-BASED PROGRAMMING IN MEMORY
    • 记忆中基于确定的编程
    • US20100142284A1
    • 2010-06-10
    • US12330928
    • 2008-12-09
    • Fatima BathulDarlene Gay HamiltonMichael AchterHagop Artin Nazarian
    • Fatima BathulDarlene Gay HamiltonMichael AchterHagop Artin Nazarian
    • G11C16/04G11C16/06
    • G11C16/10G11C11/5628G11C16/04
    • Systems, methods, and devices that employ deterministic programming techniques to facilitate efficient programming of memory elements in a memory are presented. A memory component comprises an optimized program component that can divide a group of memory elements selected for programming into a desired number of subgroups based in part on respective current threshold voltage levels (Vt) of the memory elements; apply respective program pulses to each memory element in respective subgroups; measure respective Vt levels of memory elements after the pulse; and verify as passed memory elements that meet a target Vt. The optimized program component can divide a subset of memory elements that do not meet the target Vt into a desired number of subgroups based in part on respective current Vt levels of the memory elements and can continue to perform this deterministic programming process until all memory elements are verified as passing for the target Vt.
    • 提出了使用确定性编程技术来促进存储器中的存储器元件的有效编程的系统,方法和设备。 存储器组件包括优化的程序组件,其可以部分地基于存储器元件的相应电流阈值电压电平(Vt)将被选择用于编程的一组存储器元件划分为期望数量的子组; 将相应的编程脉冲施加到各个子组中的每个存储元件; 在脉冲之后测量存储元件的各个Vt电平; 并且验证为满足目标Vt的传递的存储器元件。优化的程序组件可以部分地基于存储器元件的相应的当前Vt级别将不满足目标Vt的存储器元件的子集划分为期望数量的子组,并且可以 继续执行此确定性编程过程,直到所有存储器元素被验证为传递目标Vt为止。
    • 2. 发明授权
    • Deterministic-based programming in memory
    • 内存中基于确定性的编程
    • US07872916B2
    • 2011-01-18
    • US12330928
    • 2008-12-09
    • Fatima BathulDarlene Gay HamiltonMichael AchterHagop Artin Nazarian
    • Fatima BathulDarlene Gay HamiltonMichael AchterHagop Artin Nazarian
    • G11C16/00
    • G11C16/10G11C11/5628G11C16/04
    • Systems, methods, and devices that employ deterministic programming techniques to facilitate efficient programming of memory elements in a memory are presented. A memory component comprises an optimized program component that can divide a group of memory elements selected for programming into a desired number of subgroups based in part on respective current threshold voltage levels (Vt) of the memory elements; apply respective program pulses to each memory element in respective subgroups; measure respective Vt levels of memory elements after the pulse; and verify as passed memory elements that meet a target Vt. The optimized program component can divide a subset of memory elements that do not meet the target Vt into a desired number of subgroups based in part on respective current Vt levels of the memory elements and can continue to perform this deterministic programming process until all memory elements are verified as passing for the target Vt.
    • 提出了使用确定性编程技术来促进存储器中的存储器元件的有效编程的系统,方法和设备。 存储器组件包括优化的程序组件,其可以部分地基于存储器元件的相应电流阈值电压电平(Vt)将被选择用于编程的一组存储器元件划分为期望数量的子组; 将相应的编程脉冲施加到各个子组中的每个存储元件; 在脉冲之后测量存储器元件的各个Vt电平; 并且验证为满足目标Vt的传递的存储器元件。优化的程序组件可以部分地基于存储器元件的相应的当前Vt级别将不满足目标Vt的存储器元件的子集划分为期望数量的子组,并且可以 继续执行此确定性编程过程,直到所有存储器元素被验证为传递目标Vt为止。