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    • 2. 发明申请
    • Method and device for forming poly-silicon film
    • 用于形成多晶硅膜的方法和装置
    • US20080123200A1
    • 2008-05-29
    • US11826963
    • 2007-07-19
    • Fang-Tsun ChuJia-Xing Lin
    • Fang-Tsun ChuJia-Xing Lin
    • G02B9/00H01L21/763
    • H01L21/0268B23K26/066H01L21/02532
    • A method and a device for forming a poly-silicon film, using sequential lateral solidification (SLS) by laser irradiation through an optical device to pattern the laser beam so as to lengthen the crystalline grains and enhance the throughput. The optical device comprises a plurality of first transparent regions, a plurality of second transparent regions and a plurality of final transparent regions. The plurality of second transparent regions are disposed between the plurality of first transparent regions and the plurality of final transparent regions. The first transparent regions and the second transparent regions have a first width W1 and a first length L1, and the final transparent regions have a second width W2 and a second length L2. An mth first transparent region of the plurality of first transparent regions and an mth second transparent region of the plurality of second transparent regions are arranged in a tier-shape. An mth final transparent region of the plurality of final transparent regions is extended from the mth second transparent region of the plurality of second transparent regions.
    • 一种用于形成多晶硅膜的方法和装置,其通过使用光学装置的激光照射使用顺序侧向固化(SLS)来对激光束进行图案化,以延长晶粒并提高生产量。 光学装置包括多个第一透明区域,多个第二透明区域和多个最终透明区域。 多个第二透明区域设置在多个第一透明区域和多个最终透明区域之间。 第一透明区域和第二透明区域具有第一宽度W 1和第一长度L 1,并且最终透明区域具有第二宽度W 2和第二长度L 2。第m + 多个第一透明区域的第一透明区域和多个第二透明区域中的第m个第二透明区域排列成层状。 多个最终透明区域中的第m个最终透明区域从多个第二透明区域的第m个第二透明区域延伸。
    • 3. 发明申请
    • METHOD AND DEVICE FOR FORMING POLY-SILICON FILM
    • 形成聚硅膜的方法和装置
    • US20100103401A1
    • 2010-04-29
    • US12652566
    • 2010-01-05
    • Fang-Tsun ChuJia-Xing Lin
    • Fang-Tsun ChuJia-Xing Lin
    • G03F7/20G03F1/00
    • H01L21/0268B23K26/066H01L21/02532
    • A method and a device for forming a poly-silicon film, using sequential lateral solidification (SLS) by laser irradiation through an optical device to pattern the laser beam so as to lengthen the crystalline grains and enhance the throughput. The optical device comprises a plurality of first transparent regions, a plurality of second transparent regions and a plurality of final transparent regions. The plurality of second transparent regions are disposed between the plurality of first transparent regions and the plurality of final transparent regions. The first transparent regions and the second transparent regions have a first width W1 and a first length L1, and the final transparent regions have a second width W2 and a second length L2. An mth first transparent region of the plurality of first transparent regions and an mth second transparent region of the plurality of second transparent regions are arranged in a tier-shape. An mth final transparent region of the plurality of final transparent regions is extended from the mth second transparent region of the plurality of second transparent regions.
    • 一种用于形成多晶硅膜的方法和装置,其通过使用光学装置的激光照射使用顺序侧向固化(SLS)来对激光束进行图案化,以延长晶粒并提高生产量。 光学装置包括多个第一透明区域,多个第二透明区域和多个最终透明区域。 多个第二透明区域设置在多个第一透明区域和多个最终透明区域之间。 第一透明区域和第二透明区域具有第一宽度W1和第一长度L1,并且最终透明区域具有第二宽度W2和第二长度L2。 多个第一透明区域的第m个第一透明区域和多个第二透明区域的第m个第二透明区域被布置成层状。 多个最终透明区域的第m个最终透明区域从多个第二透明区域的第m个第二透明区域延伸。
    • 5. 发明申请
    • METHOD FOR CRYSTALIZING AMORPHOUS SILICON LAYER AND MASK THEREFOR
    • 非晶硅层的晶化方法及其掩膜
    • US20080045042A1
    • 2008-02-21
    • US11750577
    • 2007-05-18
    • Fang-Tsun ChuJia-Xing Lin
    • Fang-Tsun ChuJia-Xing Lin
    • H01L21/428G03F1/00
    • B23K26/066H01L21/02532H01L21/0268H01L21/02691H01L21/268
    • A method for crystallizing an amorphous silicon layer is provided. (A) A substrate with an amorphous silicon layer thereon is provided. (B) A mask with a mask pattern is provided. The mask pattern includes a first region pattern and a second region pattern in mirror symmetry. (C) The first region pattern is selected as a first scanning region and the substrate is moved toward a first direction, such that a laser beam passes through the first region pattern to crystallize the amorphous silicon layer along the first direction. (D) The second region pattern is selected as a second scanning region and the substrate is moved toward a second direction, such that the laser beam passes through the second region pattern to crystallize the amorphous silicon layer along the second direction. (E) The steps of (C) and (D) are repeated to convert the whole amorphous silicon layer into a polysilicon layer.
    • 提供了一种使非晶硅层结晶的方法。 (A)提供其上具有非晶硅层的基板。 (B)提供具有掩模图案的面具。 掩模图案包括第一区域图案和镜像对称的第二区域图案。 (C)第一区域图案被选择为第一扫描区域,并且基板朝向第一方向移动,使得激光束穿过第一区域图案以沿着第一方向结晶非晶硅层。 (D)第二区域图案被选择为第二扫描区域,并且基板朝向第二方向移动,使得激光束穿过第二区域图案以沿着第二方向结晶非晶硅层。 (E)重复(C)和(D)的步骤以将整个非晶硅层转化为多晶硅层。
    • 6. 发明申请
    • DISPLAY SYSTEMS HAVING ELECTRICALLY INDEPENDENT REGIONS
    • 具有电力独立地区的显示系统
    • US20110013103A1
    • 2011-01-20
    • US12502576
    • 2009-07-14
    • Da-Wei LEEJia-Xing LinTai-Ann Chen
    • Da-Wei LEEJia-Xing LinTai-Ann Chen
    • G02F1/1343G02B26/00G02F1/1335
    • G02F1/134336G02F1/1391
    • A display system including a first set of conductive electrodes, a second set of conductive electrodes, and a display medium. The first set of conductive electrodes is configured to receive a selection signal. The second set of conductive electrodes is configured to interact with the first set of conductive electrodes for activating the reading or writing of display data. The second set of conductive electrodes is configured to receive a data signal and to activate the reading or writing of a target area of the display device, in response to the selection signal to the first set of conductive electrodes and the data signal to the second set of conductive electrodes. The display medium is movably coupled with the first and second sets of conductive electrodes. One or both of the first and the second sets of conductive electrodes have at least two electrically independent regions having an independent signal input for each region.
    • 一种显示系统,包括第一组导电电极,第二组导电电极和显示介质。 第一组导电电极被配置为接收选择信号。 第二组导电电极被配置为与第一组导电电极相互作用以激活显示数据的读取或写入。 第二组导电电极被配置为响应于对第一组导电电极的选择信号和到第二组的数据信号而接收数据信号并激活对显示装置的目标区域的读取或写入 的导电电极。 显示介质可移动地与第一和第二组导电电极耦合。 第一和第二组导电电极中的一个或两个具有至少两个电独立区域,每个区域具有独立的信号输入。
    • 8. 发明申请
    • DISPLAY SYSTEMS HAVING ELECTRICALLY INDEPENDENT REGIONS
    • 具有电力独立地区的显示系统
    • US20120218176A1
    • 2012-08-30
    • US13466846
    • 2012-05-08
    • Da-Wei LEEJia-Xing LinTai-Ann Chen
    • Da-Wei LEEJia-Xing LinTai-Ann Chen
    • G09G3/36
    • G02F1/134336G02F1/1391
    • A display system including a first set of conductive electrodes, a second set of conductive electrodes, and a display medium. The first set of conductive electrodes is configured to receive a selection signal. The second set of conductive electrodes is configured to interact with the first set of conductive electrodes for activating the reading or writing of display data. The second set of conductive electrodes is configured to receive a data signal and to activate the reading or writing of a target area of the display device, in response to the selection signal to the first set of conductive electrodes and the data signal to the second set of conductive electrodes. The display medium is movably coupled with the first and second sets of conductive electrodes. One or both of the first and the second sets of conductive electrodes have at least two electrically independent regions having an independent signal input for each region.
    • 一种显示系统,包括第一组导电电极,第二组导电电极和显示介质。 第一组导电电极被配置为接收选择信号。 第二组导电电极被配置为与第一组导电电极相互作用以激活显示数据的读取或写入。 第二组导电电极被配置为响应于对第一组导电电极的选择信号和到第二组的数据信号而接收数据信号并激活对显示装置的目标区域的读取或写入 的导电电极。 显示介质可移动地与第一和第二组导电电极耦合。 第一和第二组导电电极中的一个或两个具有至少两个电独立区域,每个区域具有独立的信号输入。
    • 10. 发明申请
    • Thin Film Transistor (TFT) and Method for Fabricating the Same
    • 薄膜晶体管(TFT)及其制造方法
    • US20070243670A1
    • 2007-10-18
    • US11279933
    • 2006-04-17
    • Chi-Lin ChenPo-Hao TsaiHung-Tse ChenYu-Cheng ChenJia-Xing Lin
    • Chi-Lin ChenPo-Hao TsaiHung-Tse ChenYu-Cheng ChenJia-Xing Lin
    • H01L21/84H01L21/20
    • H01L29/78675H01L21/02532H01L21/02667H01L21/2026H01L27/1281H01L29/04H01L29/42384H01L29/66757H01L29/78618H01L29/78621H01L29/78645H01L29/78696
    • A method for fabricating a thin film transistor (“TFT”) device includes providing a substrate, forming a patterned amorphous silicon layer over the substrate including a pair of first regions, a second region disposed between the pair of first regions, and at least one third region, each of which being disposed between and contiguous with the second region and each of the pair of first regions, the second region including a sub-region contiguous with each of the at least one third region, forming a heat retaining layer over the substrate, irradiating the patterned amorphous silicon layer with a laser through the heat retaining layer to form a patterned crystallized silicon layer corresponding to the patterned amorphous silicon layer including a grain boundary extending substantially across a crystallized sub-region corresponding to the sub-region, and forming a patterned conductive layer over a portion of a crystallized second region of the patterned crystallized silicon layer corresponding to the second region of the patterned amorphous silicon layer.
    • 一种制造薄膜晶体管(“TFT”)器件的方法包括提供衬底,在衬底上形成图案化的非晶硅层,该衬底包括一对第一区域,设置在该对第一区域之间的第二区域和至少一个 第三区域,每个区域设置在第二区域之间并与第二区域和第一区域中的每一个相邻并且与第一区域中的每一个邻接,第二区域包括与至少一个第三区域中的每一个邻接的子区域, 衬底,通过所述保温层用激光照射所述图案化非晶硅层,以形成对应于所述图案化非晶硅层的图案化结晶硅层,所述图案化非晶硅层包括基本上跨越对应于所述子区域的结晶子区域延伸的晶界,以及 在图案化的结晶硅层对角结晶的第二区域的一部分上形成图案化的导电层 结合到图案化非晶硅层的第二区域。