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1. 发明授权

US08481408B2 Relaxation of strained layers 有权
标题翻译：应变层的松弛
公开(公告)号：US08481408B2
公开(公告)日：2013-07-09
申请号：US13458587
申请日：2012-04-27
申请人： Fabrice Letertre , Carlos Mazure , Michael R. Krames , Melvin B. McLaurin , Nathan F. Gardner
发明人： Fabrice Letertre , Carlos Mazure , Michael R. Krames , Melvin B. McLaurin , Nathan F. Gardner
IPC分类号： H01L21/30
CPC分类号： H01L21/2007 , H01L21/02422 , H01L21/02458 , H01L21/0254 , H01L21/02658 , H01L21/3245 , H01L33/0095
摘要： A method for relaxing a layer of a strained material. The method includes depositing a first low-viscosity layer on a first face of a strained material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained material layer; and applying a mechanical pressure to a second face of the strained material layer wherein the second face is opposite to the first face and with the mechanical pressure applied perpendicularly to the strained material layer during at least part of the heat treatment to relax the strained material.
摘要翻译：一种放松应变材料层的方法。该方法包括在应变材料层的第一面上沉积第一低粘度层; 将第一衬底粘合到第一低粘度层以形成第一复合结构; 对所述复合结构进行热处理以使所述第一低粘度层的回流至少部分地松弛所述应变材料层; 以及向所述应变材料层的第二面施加机械压力，其中所述第二面与所述第一面相对，并且在至少部分热处理期间垂直于所述应变材料层施加机械压力以松弛所述应变材料。

2. 发明申请

US20120214291A1 RELAXATION OF STRAINED LAYERS 有权
标题翻译：应变层的松弛
公开(公告)号：US20120214291A1
公开(公告)日：2012-08-23
申请号：US13458587
申请日：2012-04-27
申请人： Fabrice Letertre , Carlos Mazure , Michael R. Krames , Melvin B. McLaurin , Nathan F. Gardner
发明人： Fabrice Letertre , Carlos Mazure , Michael R. Krames , Melvin B. McLaurin , Nathan F. Gardner
IPC分类号： H01L21/762
CPC分类号： H01L21/2007 , H01L21/02422 , H01L21/02458 , H01L21/0254 , H01L21/02658 , H01L21/3245 , H01L33/0095
摘要： A method for relaxing a layer of a strained material. The method includes depositing a first low-viscosity layer on a first face of a strained material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained material layer; and applying a mechanical pressure to a second face of the strained material layer wherein the second face is opposite to the first face and with the mechanical pressure applied perpendicularly to the strained material layer during at least part of the heat treatment to relax the strained material.
摘要翻译：一种放松应变材料层的方法。该方法包括在应变材料层的第一面上沉积第一低粘度层; 将第一衬底粘合到第一低粘度层以形成第一复合结构; 对所述复合结构进行热处理以使所述第一低粘度层的回流至少部分地松弛所述应变材料层; 以及向所述应变材料层的第二面施加机械压力，其中所述第二面与所述第一面相对，并且在至少部分热处理期间垂直于所述应变材料层施加机械压力以松弛所述应变材料。

3. 发明授权

US07407869B2 Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material 有权
标题翻译：制造由单晶半导体材料制成的独立基板的方法
公开(公告)号：US07407869B2
公开(公告)日：2008-08-05
申请号：US11212795
申请日：2005-08-29
申请人： Bruno Ghyselen , Fabrice Letertre , Carlos Mazure
发明人： Bruno Ghyselen , Fabrice Letertre , Carlos Mazure
IPC分类号： H01L21/365
CPC分类号： C30B29/36 , H01L21/76254
摘要： A method for manufacturing a free-standing substrate made of a semiconductor material. A first assembly is provided and it includes a relatively thinner nucleation layer of a first material, a support of a second material, and a removable bonding interface defined between facing surfaces of the nucleation layer and support. A substrate of a relatively thicker layer of a third material is grown, by epitaph on the nucleation layer, to form a second assembly with the substrate attaining a sufficient thickness to be free-standing. The third material is preferably a monocrystalline material. Also, the removable character of the bonding interface is preserved with at least the substrate being heated to an epitaxial growth temperature. The coefficients of thermal expansion of the second and third materials are selected to be different from each other by a thermal expansion differential, determined as a function of the epitaxial growth temperature or subsequent application of external mechanical stresses, such that, as the second assembly cools from the epitaxial growth temperature, stresses are induced in the removable bonding interface to facilitate detachment of the nucleation layer from the substrate.
摘要翻译：一种制造由半导体材料制成的自立式基板的方法。提供了第一组件，并且其包括第一材料的相对更薄的成核层，第二材料的支撑体和限定在成核层和支撑体的相对表面之间的可去除的结合界面。通过在成核层上外延生长相对较厚的第三材料层的衬底，以形成第二组件，其中衬底获得足够的厚度以使其独立。第三种材料优选是单晶材料。而且，至少将衬底加热到外延生长温度来保存接合界面的可去除特性。第二和第三材料的热膨胀系数被选择为相互不同的热膨胀差异，其被确定为外延生长温度的函数或随后的外部机械应力的应用，使得当第二组件冷却时从外延生长温度，在可除去的结合界面中诱发应力以促进成核层与基底的分离。

4. 发明申请

US20060220129A1 Hybrid fully SOI-type multilayer structure 审中-公开
标题翻译：混合完全SOI型多层结构
公开(公告)号：US20060220129A1
公开(公告)日：2006-10-05
申请号：US11342380
申请日：2006-01-27
申请人： Fabrice Letertre , Carlos Mazure
发明人： Fabrice Letertre , Carlos Mazure
IPC分类号： H01L27/12
CPC分类号： H01L21/2007 , H01L21/76254
摘要： The invention relates to a silicon-on-insulator-type multilayer structure that includes a support layer, at least two working layers having different crystalline orientations, and an insulating layer extending over at least a portion of the support layer. This insulating layer extends over the whole surface of the support layer so as to extend completely between the support layer and the working layers. A process for manufacturing such a structure is also provided.
摘要翻译：本发明涉及一种绝缘体上硅型多层结构，其包括支撑层，至少两个具有不同结晶取向的工作层，以及在支撑层的至少一部分上延伸的绝缘层。该绝缘层在支撑层的整个表面上延伸，以便在支撑层和工作层之间完全延伸。还提供了一种用于制造这种结构的方法。

5. 发明授权

US08048693B2 Methods and structures for relaxation of strained layers 有权
标题翻译：应变层松弛的方法和结构
公开(公告)号：US08048693B2
公开(公告)日：2011-11-01
申请号：US12341722
申请日：2008-12-22
申请人： Fabrice Letertre , Carlos Mazure
发明人： Fabrice Letertre , Carlos Mazure
IPC分类号： H01L21/00
CPC分类号： H01L21/2007 , H01L21/324 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/0095 , H01L33/44 , Y10S438/974
摘要： The present invention provides methods for relaxing a strained-material layer and structures produced by the methods. Briefly, the methods include depositing a first low-viscosity layer that includes a first compliant material on the strained-material layer, depositing a second low-viscosity layer that includes a second compliant material on the strained-material layer to form a first sandwiched structure and subjecting the first sandwiched structure to a heat treatment such that the reflow of the first and the second low-viscosity layers permits the strained-material layer to at least partly relax.
摘要翻译：本发明提供了用于松弛应变材料层的方法和通过该方法制备的结构。简而言之，所述方法包括在应变材料层上沉积包括第一顺应材料的第一低粘度层，在应变材料层上沉积包含第二柔性材料的第二低粘度层以形成第一夹层结构以及对所述第一夹层结构进行热处理，使得所述第一和第二低粘度层的回流允许所述应变材料层至少部分地松弛。

6. 发明授权

US06964914B2 Method of manufacturing a free-standing substrate made of monocrystalline semi-conductor material 有权
标题翻译：制造由单晶半导体材料制成的独立基板的方法
公开(公告)号：US06964914B2
公开(公告)日：2005-11-15
申请号：US10349295
申请日：2003-01-22
申请人： Bruno Ghyselen , Fabrice Letertre , Carlos Mazure
发明人： Bruno Ghyselen , Fabrice Letertre , Carlos Mazure
IPC分类号： C30B29/38 , C23C16/01 , C23C16/34 , C30B25/02 , C30B29/04 , H01L21/20 , H01L21/762 , H01L21/30 , H01L21/46 , H01L21/76
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for manufacturing a free-standing substrate made of a semiconductor material. A first assembly is provided and it includes a relatively thinner nucleation layer of a first material, a support of a second material, and a removable bonding interface defined between facing surfaces of the nucleation layer and support. A substrate of a relatively thicker layer of a third material is grown, by epitaxy on the nucleation layer, to form a second assembly with the substrate attaining a sufficient thickness to be free-standing. The third material is preferably a monocrystalline material. Also, the removable character of the bonding interface is preserved with at least the substrate being heated to an epitaxial growth temperature. The coefficients of thermal expansion of the second and third materials are selected to be different from each other by a thermal expansion differential, determined as a function of the epitaxial growth temperature or subsequent application of external mechanical stresses, such that, as the second assembly cools from the epitaxial growth temperature, stresses are induced in the removable bonding interface to facilitate detachment of the nucleation layer from the substrate.
摘要翻译：一种制造由半导体材料制成的自立式基板的方法。提供了第一组件，并且其包括第一材料的相对更薄的成核层，第二材料的支撑体和限定在成核层和支撑体的相对表面之间的可去除的结合界面。通过在成核层上外延生长相对较厚的第三材料层的衬底，以形成第二组件，其中衬底获得足够的厚度以使其独立。第三种材料优选是单晶材料。而且，至少将衬底加热到外延生长温度来保存接合界面的可去除特性。第二和第三材料的热膨胀系数被选择为相互不同的热膨胀差异，其被确定为外延生长温度的函数或随后的外部机械应力的应用，使得当第二组件冷却时从外延生长温度，在可除去的结合界面中诱发应力以促进成核层与基底的分离。

7. 发明申请

US20110143522A1 RELAXATION OF STRAINED LAYERS 审中-公开
标题翻译：应变层的松弛
公开(公告)号：US20110143522A1
公开(公告)日：2011-06-16
申请号：US13056572
申请日：2009-08-06
申请人： Fabrice Letertre , Carlos Mazure
发明人： Fabrice Letertre , Carlos Mazure
IPC分类号： H01L21/263
CPC分类号： H01L21/2007 , H01L21/02422 , H01L21/02458 , H01L21/0254 , H01L21/02658 , H01L21/3245 , H01L33/0095
摘要： The present invention relates to a method for relaxing a strained material layer by depositing a first low-viscosity layer on a first face of a strained-material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained-material layer; and applying a mechanical pressure to a second face of the strained material layer which is opposite to the first face. The mechanical pressure is applied perpendicularly to the strained material layer during at least part of the heat treatment.
摘要翻译：本发明涉及通过在应变材料层的第一面上沉积第一低粘度层来松弛应变材料层的方法; 将第一衬底粘合到第一低粘度层以形成第一复合结构; 对所述复合结构进行热处理以使所述第一低粘度层的回流至少部分地松弛所述应变材料层; 以及向所述应变材料层的与所述第一面相反的第二面施加机械压力。在至少部分热处理期间机械压力垂直于应变材料层施加。

8. 发明授权

US07022586B2 Method for recycling a substrate 有权
标题翻译：回收基材的方法
公开(公告)号：US07022586B2
公开(公告)日：2006-04-04
申请号：US10728343
申请日：2003-12-03
申请人： Christophe Maleville , Fabrice Letertre , Thibaut Maurice , Carlos Mazure , Fredéric Metral
发明人： Christophe Maleville , Fabrice Letertre , Thibaut Maurice , Carlos Mazure , Fredéric Metral
IPC分类号： H01L21/30
CPC分类号： H01L21/02019 , H01L21/02032 , H01L21/02079 , H01L21/30608 , H01L21/76254
摘要： The present invention relates to a method for recycling a substrate that has a residue on its surface and a detachment profile resulting from an implantation process. The method includes removing the residue from the substrate to a level substantially equivalent to that of the detachment profile, thus obtaining a substantially uniform planar surface on the substrate, and then polishing the entire surface of the substrate to eliminate defects.
摘要翻译：本发明涉及一种在其表面上具有残留物的基板的再循环方法和由注入工艺产生的脱离轮廓。该方法包括将残留物从基材中除去至基本上等于脱模轮廓的水平，从而在基材上获得基本上均匀的平坦表面，然后抛光基材的整个表面以消除缺陷。

9. 发明申请

US20060035440A1 Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material 有权
标题翻译：制造由单晶半导体材料制成的独立基板的方法
公开(公告)号：US20060035440A1
公开(公告)日：2006-02-16
申请号：US11212795
申请日：2005-08-29
申请人： Bruno Ghyselen , Fabrice Letertre , Carlos Mazure
发明人： Bruno Ghyselen , Fabrice Letertre , Carlos Mazure
IPC分类号： H01L21/30 , H01L21/20
CPC分类号： C30B29/36 , H01L21/76254
摘要： A method for manufacturing a free-standing substrate made of a semiconductor material. A first assembly is provided and it includes a relatively thinner nucleation layer of a first material, a support of a second material, and a removable bonding interface defined between facing surfaces of the nucleation layer and support. A substrate of a relatively thicker layer of a third material is grown, by epitaxy on the nucleation layer, to form a second assembly with the substrate attaining a sufficient thickness to be free-standing. The third material is preferably a monocrystalline material. Also, the removable character of the bonding interface is preserved with at least the substrate being heated to an epitaxial growth temperature. The coefficients of thermal expansion of the second and third materials are selected to be different from each other by a thermal expansion differential, determined as a function of the epitaxial growth temperature or subsequent application of external mechanical stresses, such that, as the second assembly cools from the epitaxial growth temperature, stresses are induced in the removable bonding interface to facilitate detachment of the nucleation layer from the substrate.
摘要翻译：一种制造由半导体材料制成的自立式基板的方法。提供了第一组件，并且其包括第一材料的相对更薄的成核层，第二材料的支撑体和限定在成核层和支撑体的相对表面之间的可去除的结合界面。通过在成核层上外延生长相对较厚的第三材料层的衬底，以形成第二组件，其中衬底获得足够的厚度以使其独立。第三种材料优选是单晶材料。而且，至少将衬底加热到外延生长温度来保存接合界面的可去除特性。第二和第三材料的热膨胀系数被选择为相互不同的热膨胀差异，其被确定为外延生长温度的函数或随后的外部机械应力的应用，使得当第二组件冷却时从外延生长温度，在可除去的结合界面中诱发应力以促进成核层与基底的分离。

10. 发明授权

US09490264B2 Device having a contact between semiconductor regions through a buried insulating layer, and process for fabricating said device 有权
标题翻译：具有通过掩埋绝缘层的半导体区域之间的接触的器件，以及用于制造所述器件的工艺
公开(公告)号：US09490264B2
公开(公告)日：2016-11-08
申请号：US12984466
申请日：2011-01-04
申请人： Carlos Mazure , Richard Ferrant
发明人： Carlos Mazure , Richard Ferrant
IPC分类号： H01L21/331 , H01L21/8222 , H01L27/12 , H01L21/74 , H01L21/84 , H01L27/108 , H01L29/732 , H01L29/78 , H01L29/786
CPC分类号： H01L27/1203 , H01L21/743 , H01L21/84 , H01L27/10802 , H01L27/10873 , H01L29/732 , H01L29/7841 , H01L29/78639
摘要： The invention relates to a semiconductor device produced on a semiconductor-on-insulator substrate that includes a thin layer of semiconductor material separated from a base substrate by a buried insulating layer, the device including a first conducting region in the thin layer, a second conducting region in the base substrate and a contact connecting the first region to the second region through the insulating layer. The invention also relates to a process for fabricating such semiconductor devices.
摘要翻译：本发明涉及一种在绝缘体上半导体衬底上制造的半导体器件，其包括通过掩埋绝缘层与基底衬底分离的半导体材料的薄层，该器件包括薄层中的第一导电区域，第二导电层区域和通过绝缘层将第一区域连接到第二区域的接触。本发明还涉及制造这种半导体器件的方法。

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