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1. 发明申请

US20150028391A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US20150028391A1
公开(公告)日：2015-01-29
申请号：US14311697
申请日：2014-06-23
申请人： FUJITSU LIMITED
发明人： Tsuyoshi Takahashi
IPC分类号： H01L29/778 , H01L29/88 , H01L21/306 , H01L29/66 , H01L29/205
CPC分类号： H01L29/88 , H01L21/30612 , H01L21/8252 , H01L27/0605 , H01L27/0629 , H01L29/0657 , H01L29/205 , H01L29/66219 , H01L29/66462 , H01L29/7783
摘要： A compound semiconductor device includes a substrate, a p-type first semiconductor layer over the substrate and contains antimony, a p-type second semiconductor layer over the first semiconductor layer and contains antimony, an n-type third semiconductor layer over the second semiconductor layer, a fourth semiconductor layer between the first semiconductor layer and the second semiconductor layer, the fourth semiconductor layer containing phosphorus and having a thickness in which electrons tunnel between the first semiconductor layer and the second semiconductor layer, a first electrode in ohmic contact with the first semiconductor layer, and a second electrode in ohmic contact with the third semiconductor layer. The first semiconductor layer is made from a material whose contact resistance with the first electrode is lower than contact resistance of the second semiconductor layer.
摘要翻译：化合物半导体器件包括衬底，在衬底上的p型第一半导体层，并且包含锑，在第一半导体层上方的p型第二半导体层，并且包含锑，在第二半导体层上方的n型第三半导体层在所述第一半导体层和所述第二半导体层之间的第四半导体层，所述第四半导体层含有磷并且具有电子在所述第一半导体层和所述第二半导体层之间隧穿的厚度;第一电极，半导体层和与第三半导体层欧姆接触的第二电极。第一半导体层由与第一电极的接触电阻低于第二半导体层的接触电阻的材料制成。

2. 发明申请

US20140057401A1 COMPOUND SEMICONDUCTOR DEVICE WITH MESA STRUCTURE 有权
标题翻译：具有MESA结构的化合物半导体器件
公开(公告)号：US20140057401A1
公开(公告)日：2014-02-27
申请号：US14066730
申请日：2013-10-30
申请人： Fujitsu Limited
发明人： Tsuyoshi Takahashi , Kozo Makiyama
IPC分类号： H01L29/66 , H01L21/02 , H01L29/778
CPC分类号： H01L29/66462 , H01L21/02543 , H01L21/02587 , H01L21/0262 , H01L29/0649 , H01L29/1029 , H01L29/42316 , H01L29/778 , H01L29/7787
摘要： A compound semiconductor device having mesa-shaped element region, and excellent characteristics are provided. The compound semiconductor device has: an InP substrate; an epitaxial lamination mesa formed above the InP substrate and including a channel layer, a carrier supply layer above the channel layer and a contact cap layer above the carrier supply layer; ohmic source electrode and drain electrode formed on the cap layer; a recess formed by removing the cap layer between the source and drain electrodes, and exposing the carrier supply layer; an insulating film formed on the cap layer and retracted from an edge of the cap layer away from the recess; a gate electrode extending from the carrier supply layer in the recess to outside of the mesa; and air gap formed by removing side portion of the channel layer facing the gate electrode outside the mesa.
摘要翻译：提供了具有台面状元件区域和优异特性的复合半导体器件。化合物半导体器件具有：InP衬底; 在InP衬底上形成的外延层压台面，并且包括沟道层，沟道层上方的载流子供应层和载体供应层上方的接触顶盖层; 欧姆源电极和漏极形成在盖层上; 通过去除所述源极和漏极之间的所述盖层而形成的凹部，以及使所述载体供给层露出; 绝缘膜，其形成在所述盖层上并且从所述盖层的边缘远离所述凹部缩回; 从所述凹部中的所述载体供给层延伸到所述台面的外部的栅电极; 并且通过将面向栅电极的沟道层的侧部除去在台面外形成的气隙。

3. 发明授权

US09502545B2 Field effect semiconductor device 有权
标题翻译：场效半导体器件
公开(公告)号：US09502545B2
公开(公告)日：2016-11-22
申请号：US14547440
申请日：2014-11-19
申请人： FUJITSU LIMITED
发明人： Tsuyoshi Takahashi
IPC分类号： H01L29/739 , H01L29/66 , H01L29/205 , H01L29/36 , H01L29/08
CPC分类号： H01L29/7391 , H01L29/0895 , H01L29/205 , H01L29/365 , H01L29/66356
摘要： In order to reduce the source resistance in a field effect semiconductor device, an electron injection layer, which causes a band-to-band tunnel current to flow between a source electrode and a channel forming layer of which the central portion is a channel layer, is provided on the channel forming layer on the side in contact with the channel layer.
摘要翻译：为了降低场效应半导体器件中的源极电阻，引起带间隧道电流在源电极和中心部分是沟道层的沟道形成层之间流动的电子注入层，设置在与沟道层接触的一侧的沟道形成层上。

4. 发明授权

US10784368B2 Semiconductor device 有权
公开(公告)号：US10784368B2
公开(公告)日：2020-09-22
申请号：US16263515
申请日：2019-01-31
申请人： FUJITSU LIMITED
发明人： Tsuyoshi Takahashi , Kenichi Kawaguchi
IPC分类号： H01L29/66 , H01L29/778 , H01L29/06 , H01L29/423 , H01L29/417 , H01L29/205
摘要： A semiconductor device includes a semiconductor substrate composed of a compound semiconductor, a first semiconductor region disposed over a surface of the semiconductor substrate so as to extend upward from the surface of the semiconductor substrate, the first semiconductor region including a semiconductor nanowire composed of a compound semiconductor, a second semiconductor region disposed over the periphery of a side surface of the first semiconductor region, a gate electrode disposed over the periphery of the second semiconductor region, a drain electrode coupled to one end of the first semiconductor region, and a source electrode coupled to another end of the first semiconductor region, the first and second semiconductor regions being composed of different semiconductor materials.

5. 发明申请

US20190267484A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190267484A1
公开(公告)日：2019-08-29
申请号：US16263515
申请日：2019-01-31
申请人： FUJITSU LIMITED
发明人： Tsuyoshi Takahashi , Kenichi Kawaguchi
IPC分类号： H01L29/778 , H01L29/66 , H01L29/06 , H01L29/205 , H01L29/417 , H01L29/423
摘要： A semiconductor device includes a semiconductor substrate composed of a compound semiconductor, a first semiconductor region disposed over a surface of the semiconductor substrate so as to extend upward from the surface of the semiconductor substrate, the first semiconductor region including a semiconductor nanowire composed of a compound semiconductor, a second semiconductor region disposed over the periphery of a side surface of the first semiconductor region, a gate electrode disposed over the periphery of the second semiconductor region, a drain electrode coupled to one end of the first semiconductor region, and a source electrode coupled to another end of the first semiconductor region, the first and second semiconductor regions being composed of different semiconductor materials.

6. 发明申请

US20150171202A1 FIELD EFFECT SEMICONDUCTOR DEVICE 有权
标题翻译：场效应半导体器件
公开(公告)号：US20150171202A1
公开(公告)日：2015-06-18
申请号：US14547440
申请日：2014-11-19
申请人： FUJITSU LIMITED
发明人： Tsuyoshi Takahashi
IPC分类号： H01L29/778 , H01L29/51 , H01L29/205
CPC分类号： H01L29/7391 , H01L29/0895 , H01L29/205 , H01L29/365 , H01L29/66356
摘要： In order to reduce the source resistance in a field effect semiconductor device, an electron injection layer, which causes a band-to-band tunnel current to flow between a source electrode and a channel forming layer of which the central portion is a channel layer, is provided on the channel forming layer on the side in contact with the channel layer.
摘要翻译：为了降低场效应半导体器件中的源极电阻，引起带间隧道电流在源电极和中心部分是沟道层的沟道形成层之间流动的电子注入层，设置在与沟道层接触的一侧的沟道形成层上。

7. 发明申请

US20230015231A1 SEMICONDUCTOR DEVICE, RESERVOIR COMPUTING SYSTEM, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20230015231A1
公开(公告)日：2023-01-19
申请号：US17954385
申请日：2022-09-28
申请人： FUJITSU LIMITED
发明人： Kenichi Kawaguchi , Tsuyoshi Takahashi
IPC分类号： H01L29/06 , H01L27/08 , H01L29/205 , H01L29/885 , H01L21/02 , H01L21/8252 , H01L29/66
摘要： A semiconductor device includes a plurality of tunnel diodes, each of which includes a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type that is provided above the first semiconductor region, the second semiconductor region being a nanowire shape; an insulating film provided around a side surface of the second semiconductor region; a plurality of first electrodes, each coupled to the first semiconductor region; and a plurality of second electrodes, each coupled to the second semiconductor region, wherein the second electrode has a first surface that faces the side surface of the second semiconductor region across the insulating film, and a diameter of a second semiconductor region of a first tunnel diode of the plurality of tunnel diodes is different from a diameter of a second semiconductor region of a second tunnel diode.

8. 发明授权

US11171242B2 Semiconductor device and method for manufacturing semiconductor device 有权
公开(公告)号：US11171242B2
公开(公告)日：2021-11-09
申请号：US16944209
申请日：2020-07-31
申请人： FUJITSU LIMITED
发明人： Kenichi Kawaguchi , Naoya Okamoto , Yusuke Kumazaki , Tsuyoshi Takahashi
IPC分类号： H01L29/786 , H01L29/06 , H01L29/417 , H01L29/423 , H01L21/02 , H01L21/28 , H01L21/285 , H01L29/66
摘要： A semiconductor device includes: a semiconductor layer of a first conductivity type formed over a substrate; a plurality of semiconductor nanowires formed of a compound semiconductor of the first conductivity type extending above the semiconductor layer; and a gate electrode formed around the semiconductor nanowires in a connection portion between the semiconductor layer and the semiconductor nanowires.

9. 发明授权

US10134889B2 Compound semiconductor device and method of manufacturing the compound semiconductor device 有权
公开(公告)号：US10134889B2
公开(公告)日：2018-11-20
申请号：US15651854
申请日：2017-07-17
申请人： FUJITSU LIMITED
发明人： Tsuyoshi Takahashi
IPC分类号： H01L29/66 , H01L29/778 , H01L29/10 , H01L29/205 , H01L29/08 , H01L29/15 , H01L21/02 , H01L29/207 , H01L29/20
摘要： A disclosed compound semiconductor device includes a substrate, a channel layer formed over the substrate, an electron supply layer famed on the channel layer, a first cap layer and a second cap layer formed at a distance from each other on the electron supply layer, a source electrode formed on the first cap layer, a drain electrode formed on the second cap layer, and a gate electrode formed on the electron supply layer between the first cap layer and the second cap layer. Each of the first cap layer and the second cap layer is a stacked film formed by alternately stacking i-type first compound semiconductor layers and n-type second compound semiconductor layers having a wider bandgap than the first compound semiconductor layers.

10. 发明申请

US20180061973A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE COMPOUND SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20180061973A1
公开(公告)日：2018-03-01
申请号：US15651854
申请日：2017-07-17
申请人： FUJITSU LIMITED
发明人： Tsuyoshi Takahashi
IPC分类号： H01L29/778 , H01L29/66 , H01L29/205 , H01L29/10
CPC分类号： H01L29/778 , H01L21/02392 , H01L21/02463 , H01L21/02546 , H01L21/02576 , H01L21/0262 , H01L29/0843 , H01L29/1058 , H01L29/155 , H01L29/2003 , H01L29/205 , H01L29/207 , H01L29/66462 , H01L29/7784 , H01L29/7787
摘要： A disclosed compound semiconductor device includes a substrate, a channel layer formed over the substrate, an electron supply layer formed on the channel layer, a first cap layer and a second cap layer formed at a distance from each other on the electron supply layer, a source electrode formed on the first cap layer, a drain electrode formed on the second cap layer, and a gate electrode formed on the electron supply layer between the first cap layer and the second cap layer. Each of the first cap layer and the second cap layer is a stacked film formed by alternately stacking i-type first compound semiconductor layers and n-type second compound semiconductor layers having a wider bandgap than the first compound semiconductor layers.

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