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1. 发明授权

US09412812B2 Compound semiconductor device and method of manufacturing the same 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US09412812B2
公开(公告)日：2016-08-09
申请号：US13845033
申请日：2013-03-17
申请人： FUJITSU LIMITED
发明人： Toshihide Kikkawa
IPC分类号： H01L21/70 , H01L29/06 , H01L21/76 , H01L29/423 , H01L29/66 , H01L29/778 , H01L21/28 , H01L21/762 , H01L21/02 , H01L29/20 , H01L29/51
CPC分类号： H01L27/088 , H01L21/02178 , H01L21/02318 , H01L21/28264 , H01L21/76 , H01L21/76229 , H01L29/0649 , H01L29/2003 , H01L29/4236 , H01L29/517 , H01L29/518 , H01L29/66462 , H01L29/7787 , H01L2224/0603 , H01L2224/48247 , H01L2224/48257 , H01L2224/4903 , H01L2924/181 , H01L2924/00012
摘要： An AlGaN/GaN HEMT includes a compound semiconductor stack structure; an element isolation structure which demarcates an element region on the compound semiconductor stack structure; a first insulating film which is formed on the element region and is not formed on the element isolation structure; a second insulating film which is formed on at least the element isolation structure and is higher in hydrogen content than the first insulating film; and a gate electrode which is formed on the element region of the compound semiconductor stack structure via the second insulating film.
摘要翻译： AlGaN / GaN HEMT包括化合物半导体堆叠结构; 分离化合物半导体堆叠结构上的元素区域的元件隔离结构; 第一绝缘膜，其形成在所述元件区域上，并且不形成在所述元件隔离结构上; 第二绝缘膜，形成在至少所述元件隔离结构上，并且氢含量高于所述第一绝缘膜; 以及经由第二绝缘膜形成在化合物半导体堆叠结构的元件区域上的栅电极。

2. 发明申请

US20150041860A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20150041860A1
公开(公告)日：2015-02-12
申请号：US14445135
申请日：2014-07-29
申请人： FUJITSU LIMITED
发明人： Masato Nishimori , Toshihide Kikkawa
IPC分类号： H01L29/778 , H01L29/20 , H01L21/265 , H01L29/66
CPC分类号： H01L29/7787 , H01L21/2654 , H01L21/3245 , H01L29/0843 , H01L29/2003 , H01L29/205 , H01L29/41766 , H01L29/432 , H01L29/517 , H01L29/66462 , H01L29/778 , H01L29/7786
摘要： A semiconductor device includes an electron transit layer configured to be formed on a substrate; an electron supply layer configured to be formed on the electron transit layer; an upper surface layer configured to be formed on the electron supply layer; a gate electrode configured to be formed on the electron supply layer or the upper surface layer; a source electrode and a drain electrode configured to be formed on the upper surface layer; and first conductivity-type regions configured to be formed in the upper surface layer and the electron supply layer immediately below regions where the source electrode and the drain electrode are formed. The electron supply layer is formed of a nitride semiconductor including In. The upper surface layer is formed of a material including a nitride of one or more elements selected among B, Al, and Ga.
摘要翻译：半导体器件包括：形成在基板上的电子传输层; 电子供给层，被配置为形成在所述电子传输层上; 构造成形成在所述电子供给层上的上表面层; 构造成形成在所述电子供给层或所述上表面层上的栅电极; 构成为形成在上表面层上的源电极和漏电极; 以及第一导电型区域，其被配置为形成在形成有源电极和漏电极的区域的正上方的上表面层和电子供给层中。电子供给层由包括In的氮化物半导体形成。上表面层由包括选自B，Al和Ga中的一种或多种元素的氮化物的材料形成。

3. 发明申请

US20130221370A1 COMPOUND SEMICONDUCTOR DEVICE 有权
标题翻译：化合物半导体器件
公开(公告)号：US20130221370A1
公开(公告)日：2013-08-29
申请号：US13856253
申请日：2013-04-03
申请人： Fujitsu Limited
发明人： Toshihide Kikkawa
IPC分类号： H01L29/20 , H01L29/778
CPC分类号： H01L29/7787 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/205 , H01L29/66462 , H01L29/778 , H01L2924/0002 , H01L2924/00
摘要： The compound semiconductor device comprises an i-GaN buffer layer 12 formed on an SiC substrate 10; an n-AlGaN electron supplying layer 16 formed on the i-GaN buffer layer 12; an n-GaN cap layer 18 formed on the n-AlGaN electron supplying layer 16; a source electrode 20 and a drain electrode 22 formed on the n-GaN cap layer 18; a gate electrode 26 formed on the n-GaN cap layer 18 between the source electrode 20 and the drain electrode 22; a first protection layer formed on the n-GaN cap layer 18 between the source electrode 20 and the drain electrode 22; and a second protection layer 30 buried in an opening 28 formed in the first protection layer 24 between the gate electrode 26 and the drain electrode 22 down to the n-GaN cap layer 18 and formed of an insulation film different from the first protection layer.
摘要翻译：化合物半导体器件包括形成在SiC衬底10上的i-GaN缓冲层12; 形成在i-GaN缓冲层12上的n-AlGaN电子供给层16; 形成在n-AlGaN电子供给层16上的n-GaN帽层18; 形成在n-GaN覆盖层18上的源极20和漏电极22; 形成在源电极20和漏电极22之间的n-GaN覆盖层18上的栅电极26; 形成在源电极20和漏电极22之间的n-GaN覆盖层18上的第一保护层; 以及第二保护层30，该第二保护层30形成在栅电极26和漏电极22之间的第一保护层24中的开口28中，直到n-GaN覆盖层18，并且由不同于第一保护层的绝缘膜形成。

4. 发明申请

US20160343843A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20160343843A1
公开(公告)日：2016-11-24
申请号：US15228700
申请日：2016-08-04
申请人： FUJITSU LIMITED
发明人： Masato Nishimori , Toshihide Kikkawa
IPC分类号： H01L29/778 , H01L29/20 , H01L21/265 , H01L29/51 , H01L21/324 , H01L29/66 , H01L29/205
摘要： A semiconductor device includes an electron transit layer configured to be formed on a substrate; an electron supply layer configured to be formed on the electron transit layer; an upper surface layer configured to be formed on the electron supply layer; a gate electrode configured to be formed on the electron supply layer or the upper surface layer; a source electrode and a drain electrode configured to be formed on the upper surface layer; and first conductivity-type regions configured to be formed in the upper surface layer and the electron supply layer immediately below regions where the source electrode and the drain electrode are formed. The electron supply layer is formed of a nitride semiconductor including In. The upper surface layer is formed of a material including a nitride of one or more elements selected among B, Al, and Ga.

5. 发明授权

US09437723B2 Manufacturing method of semiconductor device including indium 有权
标题翻译：包括铟的半导体器件的制造方法
公开(公告)号：US09437723B2
公开(公告)日：2016-09-06
申请号：US14445135
申请日：2014-07-29
申请人： FUJITSU LIMITED
发明人： Masato Nishimori , Toshihide Kikkawa
IPC分类号： H01L29/778 , H01L29/66 , H01L29/20 , H01L21/265 , H01L21/324 , H01L29/51 , H01L29/08 , H01L29/417 , H01L29/43
CPC分类号： H01L29/7787 , H01L21/2654 , H01L21/3245 , H01L29/0843 , H01L29/2003 , H01L29/205 , H01L29/41766 , H01L29/432 , H01L29/517 , H01L29/66462 , H01L29/778 , H01L29/7786
摘要： A semiconductor device includes an electron transit layer configured to be formed on a substrate; an electron supply layer configured to be formed on the electron transit layer; an upper surface layer configured to be formed on the electron supply layer; a gate electrode configured to be formed on the electron supply layer or the upper surface layer; a source electrode and a drain electrode configured to be formed on the upper surface layer; and first conductivity-type regions configured to be formed in the upper surface layer and the electron supply layer immediately below regions where the source electrode and the drain electrode are formed. The electron supply layer is formed of a nitride semiconductor including In. The upper surface layer is formed of a material including a nitride of one or more elements selected among B, Al, and Ga.
摘要翻译：半导体器件包括：形成在基板上的电子传输层; 电子供给层，被配置为形成在所述电子传输层上; 构造成形成在所述电子供给层上的上表面层; 构造成形成在所述电子供给层或所述上表面层上的栅电极; 构成为形成在上表面层上的源电极和漏电极; 以及第一导电型区域，其被配置为形成在形成有源电极和漏电极的区域的正上方的上表面层和电子供给层中。电子供给层由包括In的氮化物半导体形成。上表面层由包括选自B，Al和Ga中的一种或多种元素的氮化物的材料形成。

6. 发明授权

US09276072B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US09276072B2
公开(公告)日：2016-03-01
申请号：US14518214
申请日：2014-10-20
申请人： FUJITSU LIMITED
发明人： Masato Nishimori , Toshihide Kikkawa
IPC分类号： H01L29/40 , H01L29/66 , H01L29/78 , H01L21/28 , H01L29/417 , H01L29/423 , H01L29/778 , H01L29/10 , H01L29/20
CPC分类号： H01L29/402 , H01L21/28264 , H01L29/1029 , H01L29/2003 , H01L29/41725 , H01L29/41758 , H01L29/41766 , H01L29/42316 , H01L29/66462 , H01L29/7786 , H01L29/7787
摘要： A semiconductor device includes: a first nitride semiconductor layer formed over a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer; element isolation regions formed in a part of the second nitride semiconductor layer and the first nitride semiconductor layer; a gate electrode, source electrodes, and a drain electrode formed over the second semiconductor layer and the element isolation regions; and a drain field plate formed in such a manner as to project from upper portions of side surfaces of the drain electrode.
摘要翻译：半导体器件包括：形成在衬底上的第一氮化物半导体层; 形成在第一氮化物半导体层上的第二氮化物半导体层; 形成在第二氮化物半导体层和第一氮化物半导体层的一部分中的元件隔离区; 形成在第二半导体层和元件隔离区上的栅电极，源电极和漏电极; 以及以从漏电极的侧面的上部突出的方式形成的漏极场板。

7. 发明授权

US09184272B2 Compound semiconductor device having overhang-shaped gate 有权
标题翻译：具有突出形状的栅极的复合半导体器件
公开(公告)号：US09184272B2
公开(公告)日：2015-11-10
申请号：US13932360
申请日：2013-07-01
申请人： FUJITSU LIMITED
发明人： Kozo Makiyama , Naoya Okamoto , Toshihide Kikkawa
IPC分类号： H01L31/0328 , H01L29/76 , H01L31/0336 , H01L29/778 , H01L29/66 , H02M3/335 , H01L29/40 , H01L29/423 , H01L29/20
CPC分类号： H01L21/28581 , H01L21/28264 , H01L21/28537 , H01L21/76879 , H01L29/2003 , H01L29/402 , H01L29/4175 , H01L29/42372 , H01L29/66431 , H01L29/66462 , H01L29/778 , H01L29/7787 , H02M3/335 , H02M3/33592 , Y02B70/1475
摘要： A compound semiconductor device includes: a compound semiconductor layer; a protective insulating film that covers a top of the compound semiconductor layer; and a gate electrode formed on the protective insulating film, wherein the protective insulating film has a first trench and a second trench which is formed side by side with the first trench and in which the protective insulating film remains with only a predetermined thickness on the compound semiconductor layer, and wherein the gate electrode fills the first trench, and one end of the gate electrode is away from the first trench and located at least in the second trench.
摘要翻译：化合物半导体器件包括：化合物半导体层; 覆盖化合物半导体层顶部的保护绝缘膜; 以及形成在所述保护绝缘膜上的栅电极，其中所述保护绝缘膜具有与所述第一沟槽并排形成的第一沟槽和第二沟槽，并且所述保护绝缘膜在所述化合物上仅保留预定厚度半导体层，并且其中所述栅电极填充所述第一沟槽，并且所述栅电极的一端远离所述第一沟槽并且至少位于所述第二沟槽中。

8. 发明授权

US08969159B2 Compound semiconductor device and manufacturing method thereof 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US08969159B2
公开(公告)日：2015-03-03
申请号：US14050561
申请日：2013-10-10
申请人： Fujitsu Limited
发明人： Kenji Imanishi , Toshihide Kikkawa
IPC分类号： H01L21/336 , H01L29/201 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/778 , H01L29/20
CPC分类号： H01L29/201 , H01L29/0692 , H01L29/2003 , H01L29/42376 , H01L29/66462 , H01L29/7787
摘要： A first AlGaN layer formed over a substrate, a second AlGaN layer formed over the first AlGaN layer, an electron transit layer formed over the second AlGaN layer, and an electron supply layer formed over the electron transit layer are provided. A relationship of “0≦x1
摘要翻译：提供了形成在衬底上的第一AlGaN层，形成在第一AlGaN层上的第二AlGaN层，形成在第二AlGaN层上的电子迁移层以及形成在电子迁移层上的电子供应层。当第一AlGaN层的组成由Al x Ga 1-x N N表示，并且第二AlGaN层的组成由Al x Ga 1-x 2 N表示时，找到“0＆nlE; x1

9. 发明授权

US08866157B2 Semiconductor device and method of fabricating the semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08866157B2
公开(公告)日：2014-10-21
申请号：US13900904
申请日：2013-05-23
申请人： Fujitsu Limited
发明人： Norikazu Nakamura , Shirou Ozaki , Masayuki Takeda , Toyoo Miyajima , Toshihiro Ohki , Masahito Kanamura , Kenji Imanishi , Toshihide Kikkawa , Keiji Watanabe
IPC分类号： H01L29/15 , H01L21/00 , H01L31/0312 , H01L21/28 , H01L29/20 , H01L29/78 , H01L29/66 , H01L29/778 , H01L29/51 , H01L29/417 , H01L23/31 , H01L29/423
CPC分类号： H01L21/28264 , H01L23/3171 , H01L29/2003 , H01L29/41766 , H01L29/4236 , H01L29/517 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device may include a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a source electrode and a drain electrode in contact with the first semiconductor layer or the second semiconductor layer, an opening formed in the second semiconductor layer, an insulating film formed on an inner surface of the opening formed in the second semiconductor layer and above the second semiconductor layer, a gate electrode formed in the opening via the insulating film, and a protective film formed on the insulating film and including an amorphous film containing carbon as a major component.
摘要翻译：半导体器件可以包括形成在衬底上的第一半导体层，形成在第一半导体层上的第二半导体层，与第一半导体层或第二半导体层接触的源电极和漏电极，第二半导体层，形成在形成在第二半导体层中的开口的内表面上并在第二半导体层上方的绝缘膜，经由绝缘膜形成在开口中的栅电极和形成在绝缘膜上的保护膜，包括含有碳作为主要成分的非晶膜。

10. 发明授权

US08614461B2 Compound semiconductor device 有权
标题翻译：复合半导体器件
公开(公告)号：US08614461B2
公开(公告)日：2013-12-24
申请号：US13856253
申请日：2013-04-03
申请人： Fujitsu Limited
发明人： Toshihide Kikkawa
IPC分类号： H01L29/66
CPC分类号： H01L29/7787 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/205 , H01L29/66462 , H01L29/778 , H01L2924/0002 , H01L2924/00
摘要： The compound semiconductor device comprises an i-GaN buffer layer 12 formed on an SiC substrate 10; an n-AlGaN electron supplying layer 16 formed on the i-GaN buffer layer 12; an n-GaN cap layer 18 formed on the n-AlGaN electron supplying layer 16; a source electrode 20 and a drain electrode 22 formed on the n-GaN cap layer 18; a gate electrode 26 formed on the n-GaN cap layer 18 between the source electrode 20 and the drain electrode 22; a first protection layer 24 formed on the n-GaN cap layer 18 between the source electrode 20 and the drain electrode 22; and a second protection layer 30 buried in an opening 28 formed in the first protection layer 24 between the gate electrode 26 and the drain electrode 22 down to the n-GaN cap layer 18 and formed of an insulation film different from the first protection layer.
摘要翻译：化合物半导体器件包括形成在SiC衬底10上的i-GaN缓冲层12; 形成在i-GaN缓冲层12上的n-AlGaN电子供给层16; 形成在n-AlGaN电子供给层16上的n-GaN帽层18; 形成在n-GaN覆盖层18上的源电极20和漏电极22; 形成在源电极20和漏电极22之间的n-GaN覆盖层18上的栅电极26; 形成在源电极20和漏电极22之间的n-GaN覆盖层18上的第一保护层24; 以及第二保护层30，该第二保护层30形成在栅电极26和漏电极22之间的第一保护层24中的开口28中，直到n-GaN覆盖层18，并且由不同于第一保护层的绝缘膜形成。

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