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1. 发明申请

US20140124834A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20140124834A1
公开(公告)日：2014-05-08
申请号：US14017833
申请日：2013-09-04
申请人： FUJIFILM CORPORATION , SAMSUNG ELECTRONICS CO., LTD.
发明人： Hyung-Rae Lee , Keita Kato , Atsushi Nakamura , Yool Kang , Suk-Koo Hong , Jae-Ho Kim , Dong-Jun Lee , Si-Young Lee
IPC分类号： H01L21/308 , H01L27/092 , H01L29/78
CPC分类号： H01L29/7848 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/325 , G03F7/405 , H01L21/0274 , H01L21/3083 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L29/165 , H01L29/66636
摘要： A method of fabricating a semiconductor device is disclosed comprising the steps of: providing a substrate having a first region, a second region and a plurality of gate electrodes which are formed on the first and second regions of the substrate; forming a mask film to expose the first region of the substrate while covering the second region of the substrate, such that the mask film has a negative lateral profile at a boundary between the first and second regions of the substrate; forming sigma trenches in the first region of the substrate by etching the first region of the substrate using the mask film and the gate electrodes as a mask; and forming an epitaxial layer in each of the sigma trenches.
摘要翻译：公开了制造半导体器件的方法，包括以下步骤：提供形成在衬底的第一和第二区域上的具有第一区域，第二区域和多个栅电极的衬底; 形成掩模膜以在覆盖基板的第二区域的同时露出基板的第一区域，使得掩模膜在基板的第一和第二区域之间的边界处具有负的横向轮廓; 通过使用掩模膜和栅电极作为掩模蚀刻衬底的第一区域，在衬底的第一区域中形成硅沟槽; 以及在每个σ沟槽中形成外延层。

2. 发明授权

US08987118B2 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08987118B2
公开(公告)日：2015-03-24
申请号：US14017833
申请日：2013-09-04
申请人： Samsung Electronics Co., Ltd. , Fujifilm Corporation
发明人： Hyung-Rae Lee , Keita Kato , Atsushi Nakamura , Yool Kang , Suk-Koo Hong , Jae-Ho Kim , Dong-Jun Lee , Si-Young Lee
IPC分类号： H01L21/20 , H01L29/78 , H01L29/66 , H01L21/027 , H01L21/8238 , H01L21/308 , G03F7/004 , G03F7/039 , G03F7/32 , G03F7/40 , H01L29/165
CPC分类号： H01L29/7848 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/325 , G03F7/405 , H01L21/0274 , H01L21/3083 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L29/165 , H01L29/66636
摘要： A method of fabricating a semiconductor device is disclosed comprising the steps of: providing a substrate having a first region, a second region and a plurality of gate electrodes which are formed on the first and second regions of the substrate; forming a mask film to expose the first region of the substrate while covering the second region of the substrate, such that the mask film has a negative lateral profile at a boundary between the first and second regions of the substrate; forming sigma trenches in the first region of the substrate by etching the first region of the substrate using the mask film and the gate electrodes as a mask; and forming an epitaxial layer in each of the sigma trenches.
摘要翻译：公开了制造半导体器件的方法，包括以下步骤：提供形成在衬底的第一和第二区域上的具有第一区域，第二区域和多个栅电极的衬底; 形成掩模膜以在覆盖基板的第二区域的同时露出基板的第一区域，使得掩模膜在基板的第一和第二区域之间的边界处具有负的横向轮廓; 通过使用掩模膜和栅电极作为掩模蚀刻衬底的第一区域，在衬底的第一区域中形成硅沟槽; 以及在每个σ沟槽中形成外延层。

3. 发明授权

US09337032B2 Method of forming pattern of semiconductor device 有权
标题翻译：半导体器件形成方法
公开(公告)号：US09337032B2
公开(公告)日：2016-05-10
申请号：US14445185
申请日：2014-07-29
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Hyung-Rae Lee , Yool Kang , Seong-Ji Kwon
IPC分类号： G03F7/26 , H01L21/027 , G03F7/40 , H01L21/308 , H01L21/311
CPC分类号： H01L21/0273 , G03F7/26 , G03F7/40 , H01L21/3086 , H01L21/31144
摘要： A method of forming a pattern of a semiconductor device includes providing a substrate, forming a photoresist layer by coating a resist composition including an acid generator and a first resin, the first resin having an acid-labile group, exposing the photoresist layer, forming a photoresist pattern by negatively developing the photoresist layer using a developing solution including an organic solvent, coating a capping composition including a second resin and the organic solvent on the substrate having the photoresist pattern formed thereon, and attaching a capping layer on upper and side surfaces of the photoresist pattern, by baking the capping composition and developing the capping composition using the developing solution including the organic solvent.
摘要翻译：形成半导体器件的图案的方法包括提供基板，通过涂覆包含酸发生剂和第一树脂的抗蚀剂组合物形成光致抗蚀剂层，所述第一树脂具有酸不稳定基团，使光致抗蚀剂层曝光，形成通过使用包含有机溶剂的显影溶液负性显影光致抗蚀剂层，在其上形成有光致抗蚀剂图案的基材上涂覆包含第二树脂和有机溶剂的封盖组合物，并且在上表面和侧表面上附着覆盖层，光刻胶图案，通过烘烤封盖组合物并使用包含有机溶剂的显影溶液显影封盖组合物。

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