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1. 发明公开

US20230369142A1 SEMICONDUCTOR DEVICE AND METHOD FOR DETERMINING DETERIORATION OF SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20230369142A1
公开(公告)日：2023-11-16
申请号：US18181171
申请日：2023-03-09
申请人： FUJI ELECTRIC CO., LTD.
发明人： Motohito HORI , Yoshinari IKEDA , Takaaki TANAKA , Qichen WANG
IPC分类号： H01L21/66 , H01L23/049 , H01L23/373 , H01L23/00 , H01L25/18 , H01L25/07 , G01R31/28
CPC分类号： H01L22/32 , G01R31/2851 , H01L23/049 , H01L23/3735 , H01L24/48 , H01L25/072 , H01L25/18 , H01L2224/48139 , H01L2924/12031 , H01L2924/12032 , H01L2924/13055 , H01L2924/13091
摘要： A semiconductor device includes a first input conductive plate on which a plurality of first semiconductor chips arranged in a first direction, a first output conductive plate extending in the first direction and being provided adjacent to the first input conductive plate, a case having first to fourth side walls for accommodating the first input conductive plate and the first output conductive plate, first main current wiring members, each of which connects one of the first output electrodes to a front surface of the first output conductive plate, a first detection terminal disposed in the first side wall, and a first detection wiring member connecting the front surface of the first output conductive plate to the first detection terminal. The first output conductive plate is disposed closer to the first side wall than is the first input conductive plate.

2. 发明申请

US20160344301A1 THREE-LEVEL POWER CONVERTER 审中-公开
标题翻译：三电平转换器
公开(公告)号：US20160344301A1
公开(公告)日：2016-11-24
申请号：US15230968
申请日：2016-08-08
申请人： FUJI ELECTRIC CO., LTD.
发明人： Koji MARUYAMA , Takaaki TANAKA
IPC分类号： H02M7/00 , H01L25/18 , H05K5/00 , H01L25/11 , H02M7/537 , H05K5/02
CPC分类号： H02M7/003 , H01L25/115 , H01L25/18 , H02M7/48 , H02M7/483 , H02M7/487 , H02M7/537 , H05K5/0065 , H05K5/0247
摘要： A three-level power converter includes a first module housing a vertical arm forming a three-level power conversion circuit; a second module disposed adjacent to the first module and housing an intermediate arm forming the three-level power conversion circuit; high-potential and low-potential connecting terminal boards each extending vertically, and having a lower end connected to connecting terminals on an upper surface of the first module, and an upper end provided with an external connecting end; and a flat intermediate-potential connecting terminal board extending vertically, and having a lower end connected to connecting terminals on an upper surface of the second module, and an upper end provided with an external connecting end. The high-potential, low-potential, and intermediate-potential connecting terminal boards are stacked close to and parallel to one another. Each of the external connecting ends is connected to a corresponding terminal of a DC capacitor.
摘要翻译：三电平功率转换器包括：第一模块，其容纳形成三电平电力转换电路的垂直臂; 第二模块，邻近所述第一模块设置并容纳形成所述三电平电力转换电路的中间臂; 高电位和低电位的连接端子板各自垂直延伸，并且具有连接到第一模块的上表面上的连接端子的下端，以及设置有外部连接端的上端; 以及垂直延伸的平坦的中间电位连接端子板，并且具有连接到所述第二模块的上表面上的连接端子的下端，以及设置有外部连接端的上端。高电位，低电位和中间电位的连接端子板彼此靠近并且平行堆叠。每个外部连接端连接到直流电容器的相应端子。

3. 发明申请

US20160028224A1 THREE-LEVEL INVERTER 有权
标题翻译：三电平逆变器
公开(公告)号：US20160028224A1
公开(公告)日：2016-01-28
申请号：US14877318
申请日：2015-10-07
申请人： FUJI ELECTRIC CO., LTD.
发明人： Ryuji YAMADA , Koji MARUYAMA , Takaaki TANAKA
IPC分类号： H02H9/02 , H02M7/537
CPC分类号： H02H9/02 , H02M3/156 , H02M7/487 , H02M7/537 , H02M2001/007 , Y02B70/1483
摘要： A series circuit of capacitors and a series circuit of semiconductor switches such as SiC-MOSFETs are connected in parallel to a direct current power source, and one end of a bidirectional switch formed of semiconductor switches, such as IGBTs, and diodes, such as SiC-SBDs (Silicon Carbide Schottky Barrier Diodes), is connected to a series connection point (an M point) of the capacitors, while the other end of the bidirectional switch is connected to a series connection point of the semiconductor switches, in a three-level inverter that outputs three voltage levels by operating the semiconductor switches so as to satisfy at least one of the condition that the peak value of an alternating current output voltage Vo is a value of 80% or more of the voltage of the capacitors and the condition that an output power factor is 0.8 or more.
摘要翻译：电容器的串联电路和诸如SiC-MOSFET的半导体开关的串联电路并联连接到直流电源，并且由诸如IGBT的半导体开关和诸如SiC的二极管形成的双向开关的一端 -SBD（碳化硅肖特基势垒二极管）连接到电容器的串联连接点（M点），而双向开关的另一端连接到半导体开关的串联连接点，电平逆变器，其通过操作半导体开关输出三个电压电平，以满足以下条件中的至少一个：交流输出电压Vo的峰值为电容器的电压的80％以上的值，条件输出功率因数为0.8以上。

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