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1. 发明授权

US10971431B2 Semiconductor device, cooling module, power converting device, and electric vehicle 有权
公开(公告)号：US10971431B2
公开(公告)日：2021-04-06
申请号：US16361979
申请日：2019-03-22
申请人： FUJI ELECTRIC CO., LTD.
发明人： Kohei Yamauchi , Hiromichi Gohara , Katsumi Taniguchi
IPC分类号： H01L23/473 , H01L23/467 , H01L23/367 , H01L23/50 , H02M7/00 , H02P27/06 , H02M7/537
摘要： A semiconductor device includes: a first cooling device including a plurality of first flow channels through which a fluid flows, between a first main surface and a second main surface opposed to each other; a second cooling device including a plurality of second flow channels through which a fluid flows, between a third main surface and a fourth main surface parallel to the first main surface; a semiconductor element interposed between the first main surface and the third main surface facing each other; and a control terminal penetrating from the third main surface to the fourth main surface in a terminal-penetrating region defined at a predetermined position between the plurality of second flow channels, and electrically connected to a control electrode of the semiconductor element.

2. 发明授权

US10825746B2 Semiconductor device and method of manufacturing semiconductor device 有权
公开(公告)号：US10825746B2
公开(公告)日：2020-11-03
申请号：US16377084
申请日：2019-04-05
申请人： Fuji Electric Co., Ltd.
发明人： Katsumi Taniguchi
IPC分类号： H01L23/043 , H01L21/52 , H01L25/07 , H01L23/373 , H01L23/00 , H01L25/11 , H01L25/065 , H01L23/31
摘要： The present invention includes: a plurality of semiconductor modules on a metal base (conductor base); a first insulating bus bar and a second insulating bus bar connecting the semiconductor modules; a box-like insulating resin frame around the semiconductor modules; a first insulating layer that seals the semiconductor modules, the first insulating layer having an upper surface at a position that is lower than upper ends of terminals extending from an insulating circuit substrate of the semiconductor module inside the insulating resin frame; and second insulating layers on the first insulating layer inside the insulating resin frame, the upper ends of the terminals being buried inside the second insulating layers. Interfaces formed by the first insulating layer, second insulating layers, and sidewall parts (third insulating layer) of the insulating resin frame are arranged between the terminals and ground positions formed at the lower ends of the sidewall parts.

3. 发明授权

US10529642B2 Power semiconductor device 有权
公开(公告)号：US10529642B2
公开(公告)日：2020-01-07
申请号：US16141026
申请日：2018-09-25
申请人： FUJI ELECTRIC CO., LTD.
发明人： Katsumi Taniguchi , Motohito Hori
IPC分类号： H01L23/367 , H01L23/42 , H01L23/498
摘要： The semiconductor device includes a first conductive layer, semiconductor elements bonded to the upper surface of the first conductive layer, a second conductive layer separated from the first conductive layer, a control terminal bonded to the second conductive layer, a control resistor bonded to the upper surface of the second conductive layer, a control-resistor pin bonded to the upper surface of the control resistor and a wiring board having a control-wiring layer for electrically connecting the semiconductor elements and the control-resistor pin.

4. 发明授权

US09076479B2 Magnetic recording medium 有权
标题翻译：磁记录介质
公开(公告)号：US09076479B2
公开(公告)日：2015-07-07
申请号：US13965140
申请日：2013-08-12
申请人： FUJI ELECTRIC CO., LTD.
发明人： Tomonori Katano , Akiyasu Kumagai , Katsumi Taniguchi , Hiromi Ono , Narumi Sato , Shinji Uchida
IPC分类号： G11B5/66 , G11B5/725 , G11B5/72 , G11B5/84
CPC分类号： G11B5/725 , G11B5/72 , G11B5/82 , G11B5/8408
摘要： A magnetic recording medium includes a substrate having sequentially formed thereon (a) a magnetic layer; (b) a protective layer having a thickness ranging from 1.0 nm to 2.5 nm and being composed of an amorphous metal layer having a thickness of at least 0.3 nm, the amorphous metal layer being composed of a metal selected from the group consisting of Si, Al, Ge, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W that is in an amorphous state; (c) a carbon layer formed on the amorphous metal layer and having a thickness of at least 0.3 nm, the carbon layer including amorphous carbon; and (d) a lubricating layer, wherein the carbon layer includes nitrogen atoms in a surface thereof in which a ratio of number of nitrogen atoms to total number of carbon atoms, nitrogen atoms, and oxygen atoms is 14 atomic % or less.
摘要翻译：磁记录介质包括其上顺序形成的基板（a）磁性层; （b）厚度为1.0nm〜2.5nm的保护层，由厚度为0.3nm以下的非晶质金属层构成，所述无定形金属层由选自Si， Al，Ge，Ti，Zr，Hf，V，Nb，Ta，Cr，Mo和W; （c）形成在所述非晶态金属层上并具有至少0.3nm的厚度的碳层，所述碳层包括无定形碳; 和（d）润滑层，其中，碳层在其表面含有氮原子数与碳原子数，氮原子数和氧原子的比率为14原子％以下的氮原子。

5. 发明授权

US10109973B2 Insulating busbar and manufacturing method 有权
公开(公告)号：US10109973B2
公开(公告)日：2018-10-23
申请号：US15203755
申请日：2016-07-06
申请人： FUJI ELECTRIC CO., LTD.
发明人： Yuji Hayase , Katsumi Taniguchi
IPC分类号： H01R11/09 , H01R43/18 , H01R25/16 , H01R9/24 , H01R43/24 , H05K7/14
摘要： To realize an insulating busbar that has both low inductance and high withstand voltage, provided is an insulating busbar that connects to a module on which is mounted a semiconductor chip, including a plurality of circuit conductors; a plurality of connection terminals that respectively electrically connect the circuit conductors to the module; and an insulating resin portion that is formed integrally between each of the circuit conductors and at least a portion of a region around each connection terminal and does not have any gaps between the circuit semiconductors.

6. 发明授权

US09590622B1 Semiconductor module 有权
标题翻译：半导体模块
公开(公告)号：US09590622B1
公开(公告)日：2017-03-07
申请号：US15200847
申请日：2016-07-01
申请人： FUJI ELECTRIC CO., LTD.
发明人： Tetsuya Inaba , Yoshinari Ikeda , Katsumi Taniguchi , Daisuke Kimijima
IPC分类号： H03K17/687 , H01L29/16 , H01L23/373 , H01L23/367 , H01L25/07 , H01L29/861 , H01L23/528
CPC分类号： H03K17/687 , H01L23/3675 , H01L23/3735 , H01L23/3736 , H01L23/4006 , H01L23/473 , H01L23/49833 , H01L23/528 , H01L24/01 , H01L24/06 , H01L24/29 , H01L24/32 , H01L25/072 , H01L25/074 , H01L25/18 , H01L29/1608 , H01L29/861 , H01L2224/06181 , H01L2224/291 , H01L2224/32225 , H01L2225/06589 , H01L2924/10272 , H01L2924/1203 , H01L2924/13091 , H01L2924/014 , H01L2924/00014
摘要： In a semiconductor module, second semiconductor chips (e.g., diodes) are disposed closer to a laminated substrate than first semiconductor chips (MOSFETs). When a control signal supplied to gate electrodes of the first semiconductor chips (MOSFETs) is off, an electric current produced by a voltage from source terminals to a drain board mainly flows through the second semiconductor chips.
摘要翻译：在半导体模块中，第二半导体芯片（例如二极管）比第一半导体芯片（MOSFET）更靠近叠层基板。当提供给第一半导体芯片（MOSFET）的栅电极的控制信号关闭时，由源极端子到漏极板的电压产生的电流主要流过第二半导体芯片。

7. 发明授权

US09478243B2 Magnetic recording medium for heat-assisted recording system and method for manufacturing same 有权
标题翻译：用于热辅助记录系统的磁记录介质及其制造方法
公开(公告)号：US09478243B2
公开(公告)日：2016-10-25
申请号：US14680007
申请日：2015-04-06
申请人： FUJI ELECTRIC CO., LTD.
发明人： Narumi Sato , Akiyasu Kumagai , Tomonori Katano , Katsumi Taniguchi
IPC分类号： G11B5/66 , G11B5/72 , G11B5/84
CPC分类号： G11B5/72 , G11B5/8408
摘要： The magnetic recording medium for a heat-assisted recording system has a magnetic recording layer on a non-magnetic substrate and a protective layer on top of the magnetic recording layer. The protective layer includes a first lower protective layer on top of the magnetic recording layer, a first upper protective layer on the first lower protective layer, and a second protective layer on the first upper protective layer. The first lower protective layer is composed mainly of an element selected from the group consisting of Si, Al and Cu, and the first upper protective layer is a layer configured by an oxide of the material of the first lower protective layer.
摘要翻译：用于热辅助记录系统的磁记录介质在非磁性基板上具有磁记录层，在磁记录层顶部具有保护层。保护层包括在磁记录层顶部的第一下保护层，第一下保护层上的第一上保护层和第一上保护层上的第二保护层。第一下保护层主要由选自Si，Al和Cu的元素组成，第一上保护层是由第一下保护层的材料的氧化物构成的层。

8. 发明授权

US11201121B2 Semiconductor device 有权
公开(公告)号：US11201121B2
公开(公告)日：2021-12-14
申请号：US15903570
申请日：2018-02-23
申请人： FUJI ELECTRIC CO., LTD.
发明人： Kohei Yamauchi , Hiromichi Gohara , Ryoichi Kato , Yoshinari Ikeda , Katsumi Taniguchi
IPC分类号： H01L23/00 , H01L23/31 , H01L23/367 , H01L23/46 , H01L23/29 , H01L23/373 , H01L23/433 , H01L23/473 , H01L23/498
摘要： A semiconductor device encompasses a cooler made of ceramics, having a first main face and a second main face, being parallel and opposite to the first main face, defined by two opposite side faces perpendicular to the first and second main faces, a plurality of conductive-pattern layers delineated on the first main face, a semiconductor chip mounted on the first main face via one of the plurality of conductive-pattern layers, and a seal member configured to seal the semiconductor chip.

9. 发明授权

US10998309B2 Semiconductor unit, semiconductor module, and semiconductor device having terminal region extending in parallel to the transistors 有权
公开(公告)号：US10998309B2
公开(公告)日：2021-05-04
申请号：US16566579
申请日：2019-09-10
申请人： Fuji Electric Co., Ltd.
发明人： Masashi Hoya , Katsumi Taniguchi , Naoyuki Kanai
IPC分类号： H01L23/498 , H01L27/06 , H01L23/31 , H01L23/522
摘要： A semiconductor unit includes: a plurality of transistor chips arranged in a plurality of parallel rows, each transistor chip respectively having a first main electrode on one surface and a second main electrode on another surface; a first conductor layer electrically connected to the first main electrodes of the transistor chips, both corner portions on one end of the first conductor layer being drawn out in a direction in which the rows of transistor chips run; a second conductor layer arranged between the both corner portions of the first conductor layer; and a wiring substrate that is arranged on a side of the second main electrodes of the plurality of transistor chips and includes a wiring layer electrically connected to the second main electrodes of the plurality of transistor chips and to the second conductor layer.

10. 发明授权

US11056475B2 Semiconductor module 有权
公开(公告)号：US11056475B2
公开(公告)日：2021-07-06
申请号：US16560278
申请日：2019-09-04
申请人： Fuji Electric Co., Ltd.
发明人： Katsumi Taniguchi
IPC分类号： H01L25/18 , H01L23/538 , H01L25/07 , H01L23/31 , G01R19/00 , H01L49/02 , H01L21/48 , H01L21/56 , H01L25/00 , H01L25/16
摘要： A semiconductor module includes: a first circuit substrate having a conductive layer disposed on an insulating plate; a plurality of semiconductor elements on the conductive layer, a second circuit substrate disposed above the semiconductor elements, the second circuit substrate having a main current wiring layer and a control wiring layer positioned in a layer above the main current wiring layer; a first lead terminal vertically extending upwards from and in contact with the main current wiring layer; a second lead terminal vertically extending upwards from and in contact with the conductive layer of the first circuit substrate; a third lead terminal vertically extending upwards from and in contact with the control wiring layer; and a sealing material covering at least some of the elements mentioned above.

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