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1. 发明申请

US20140319669A1 POWER MODULE 有权
标题翻译：电源模块
公开(公告)号：US20140319669A1
公开(公告)日：2014-10-30
申请号：US14262076
申请日：2014-04-25
申请人： FUJI ELECTRIC CO., LTD.
发明人： Daisuke KIMIJIMA , Yuji ICHIMURA
IPC分类号： H01L23/42
CPC分类号： H01L23/42 , H01L23/24 , H01L23/36 , H01L23/3735 , H01L23/3737 , H01L23/49811 , H01L2224/48091 , H01L2224/48227 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： Provided is a power module. The power module includes a power semiconductor chip. The power module further includes a case that accommodates the power semiconductor chip. A silicone gel seals the power semiconductor chip within the case. The silicone gel including a heat-resistant silicone gel containing 20 to 100 mass ppm of a metal complex comprising a metal selected from a group consisting of iron and platinum.
摘要翻译：提供一个电源模块。功率模块包括功率半导体芯片。功率模块还包括容纳功率半导体芯片的壳体。硅胶凝胶密封箱内的功率半导体芯片。所述硅凝胶包括含有20〜100质量ppm的金属络合物的耐热硅凝胶，所述金属络合物包含选自铁和铂的金属。

2. 发明申请

US20170047923A1 SEMICONDUCTOR MODULE 有权
标题翻译：半导体模块
公开(公告)号：US20170047923A1
公开(公告)日：2017-02-16
申请号：US15200847
申请日：2016-07-01
申请人： FUJI ELECTRIC CO., LTD.
发明人： Tetsuya INABA , Yoshinari IKEDA , Katsumi TANIGUCHI , Daisuke KIMIJIMA
IPC分类号： H03K17/687 , H01L23/373 , H01L23/528 , H01L25/07 , H01L29/861 , H01L29/16 , H01L23/367
CPC分类号： H03K17/687 , H01L23/3675 , H01L23/3735 , H01L23/3736 , H01L23/4006 , H01L23/473 , H01L23/49833 , H01L23/528 , H01L24/01 , H01L24/06 , H01L24/29 , H01L24/32 , H01L25/072 , H01L25/074 , H01L25/18 , H01L29/1608 , H01L29/861 , H01L2224/06181 , H01L2224/291 , H01L2224/32225 , H01L2225/06589 , H01L2924/10272 , H01L2924/1203 , H01L2924/13091 , H01L2924/014 , H01L2924/00014
摘要： In a semiconductor module, second semiconductor chips (e.g., diodes) are disposed closer to a laminated substrate than first semiconductor chips (MOSFETs). When a control signal supplied to gate electrodes of the first semiconductor chips (MOSFETs) is off, an electric current produced by a voltage from source terminals to a drain board mainly flows through the second semiconductor chips.
摘要翻译：在半导体模块中，第二半导体芯片（例如二极管）比第一半导体芯片（MOSFET）更靠近叠层基板。当提供给第一半导体芯片（MOSFET）的栅电极的控制信号关闭时，由源极端子到漏极板的电压产生的电流主要流过第二半导体芯片。

3. 发明申请

US20160293517A1 SEMICONDUCTOR MODULE AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件和半导体器件
公开(公告)号：US20160293517A1
公开(公告)日：2016-10-06
申请号：US15069404
申请日：2016-03-14
申请人： FUJI ELECTRIC CO., LTD.
发明人： Tetsuya INABA , Yoshinari IKEDA , Motohito HORI , Daisuke KIMIJIMA
IPC分类号： H01L23/473 , H01L25/07 , H01L23/00 , H01L29/78
CPC分类号： H01L23/473 , H01L24/72 , H01L25/074 , H01L29/7813
摘要： A semiconductor module includes a semiconductor element having a gate electrode and source electrode on the front surface, and a drain electrode on the rear surface, the drain electrode being electrically connected to the front surface of a drain plate; a laminated substrate having, on the front surface of an insulating plate, a first circuit plate to which the gate electrode is electrically connected, and a second circuit plate to which the source electrode is electrically connected, and which is disposed on the front surface of the drain plate; a gate terminal disposed on the first circuit plate; a source terminal disposed on the second circuit plate; and a cover disposed opposite to the front surface of the drain plate, and having an opening in which the gate terminal and the source terminal are positioned and a guide groove contacting the opening and extending to the outer peripheral portion.
摘要翻译：半导体模块包括在前表面上具有栅电极和源电极的半导体元件和在后表面上的漏电极，漏电极电连接到排水板的前表面; 层叠基板，其在绝缘板的前表面上具有电连接所述栅电极的第一电路板和所述源电极电连接的第二电路板，并且所述第二电路板设置在所述栅电极的前表面上排水板; 设置在所述第一电路板上的栅极端子; 设置在所述第二电路板上的源极端子; 以及与排水板的前表面相对设置的盖，并且具有开口，栅极端子和源极端子定位在该开口中，以及与开口接触并延伸到外周部分的引导槽。

4. 发明申请

US20220157673A1 MODULE-TYPE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING MODULE-TYPE SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220157673A1
公开(公告)日：2022-05-19
申请号：US17483323
申请日：2021-09-23
申请人： FUJI ELECTRIC CO., LTD.
发明人： Daisuke KIMIJIMA
IPC分类号： H01L23/10 , H01L23/053 , H01L23/31 , H01L23/498 , H01L21/52 , H01L21/56
摘要： A semiconductor device includes a substrate having a first main surface on which a semiconductor chip is mounted, a case adhered to a peripheral edge of the substrate to form a recess in which the semiconductor chip is disposed, a cover disposed in the case with a first gap in a direction parallel to the first main surface between the cover and the case such that a second main surface of the cover faces the first main surface, and a first adhesive layer embedded in the first gap. The first adhesive layer has a first protruding portion and/or a second protruding portion, the first and second protruding portions respectively protruding outside and inside the recess from the first gap while being in contact with the inner walls of the case and respectively a third main surface of the cover opposite to the second main surface, and the second main surface.

5. 发明申请

US20150115428A1 POWER SEMICONDUCTOR MODULE 有权
标题翻译：功率半导体模块
公开(公告)号：US20150115428A1
公开(公告)日：2015-04-30
申请号：US14512372
申请日：2014-10-10
申请人： FUJI ELECTRIC CO., LTD.
发明人： Daisuke KIMIJIMA , Yuji ICHIMURA
IPC分类号： H01L23/24 , H01L29/739
CPC分类号： H01L23/24 , H01L23/564 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49109 , H01L2224/73265 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
摘要： A power semiconductor module available under environments of high temperature has enhanced heat resistance of silicone gel filled up in a case. A power semiconductor module comprises a power semiconductor element, an insulating substrate mounted with the power semiconductor element, a resin case containing the power semiconductor element and the insulating substrate, a silicone gel injected into the resin case, and a sheet composed of a silicone rubber or silicone resin, disposed between the resin case and the silicone gel within the resin case.
摘要翻译：在高温环境下可用的功率半导体模块具有增加的硅胶凝胶的耐热性。功率半导体模块包括功率半导体元件，安装有功率半导体元件的绝缘基板，容纳功率半导体元件和绝缘基板的树脂壳体，注入到树脂壳体中的硅凝胶和由硅橡胶或硅树脂，设置在树脂壳体和树脂壳体内的硅凝胶之间。

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