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    • 6. 发明授权
    • SOI lateral bipolar junction transistor having a wide band gap emitter contact
    • 具有宽带隙发射极接触的SOI横向双极结型晶体管
    • US08557670B1
    • 2013-10-15
    • US13605253
    • 2012-09-06
    • Jin CaiKevin K. ChanChristopher P. D'EmicTak H. NingDae-Gyu Park
    • Jin CaiKevin K. ChanChristopher P. D'EmicTak H. NingDae-Gyu Park
    • H01L21/8222
    • H01L29/42304H01L29/66242H01L29/66272H01L29/7322H01L29/7371
    • A lateral heterojunction bipolar transistor is formed on a semiconductor-on-insulator substrate including a top semiconductor portion of a first semiconductor material having a first band gap and a doping of a first conductivity type. A stack of an extrinsic base and a base cap is formed such that the stack straddles over the top semiconductor portion. A dielectric spacer is formed around the stack. Ion implantation of dopants of a second conductivity type is performed to dope regions of the top semiconductor portion that are not masked by the stack and the dielectric spacer, thereby forming an emitter region and a collector region. A second semiconductor material having a second band gap greater than the first band gap and having a doping of the second conductivity type is selectively deposited on the emitter region and the collector region to form an emitter contact region and a collector contact region, respectively.
    • 在绝缘体上半导体衬底上形成横向异质结双极晶体管,该衬底包括具有第一带隙和第一导电类型掺杂的第一半导体材料的顶部半导体部分。 形成外部基座和基座的堆叠,使得叠层跨越顶部半导体部分。 在堆叠周围形成介电隔离件。 执行第二导电类型的掺杂剂的离子注入以掺杂未被叠层和电介质间隔物掩蔽的顶部半导体部分的区域,由此形成发射极区域和集电极区域。 具有大于第一带隙的第二带隙并且具有第二导电类型的掺杂的第二半导体材料被选择性地沉积在发射极区域和集电极区域上,以分别形成发射极接触区域和集电极接触区域。
    • 9. 发明授权
    • UHV horizontal hot wall cluster CVD/growth design
    • 特高压水平热壁簇CVD /生长设计
    • US06350321B1
    • 2002-02-26
    • US09207353
    • 1998-12-08
    • Kevin K. ChanChristopher P. D'EmicRaymond M. SicinaPaul M. KozlowskiMargaret MannySandip Tiwari
    • Kevin K. ChanChristopher P. D'EmicRaymond M. SicinaPaul M. KozlowskiMargaret MannySandip Tiwari
    • C23C1600
    • H01L21/67225C23C14/56
    • A cluster system controls the interface properties of the films that deposit or grow on a silicon substrate. The system comprises a plurality of horizontal quartz chamber or tubes each of which can hold a large quantity of wafers, a transfer chamber and a load/unload chamber. Several process steps can be executed sequentially in different tubes without intermediate exposure to ambient air. A transfer chamber connects them and allows wafer transportation from one tube to another in an absolute controlled UHV environment which limits any contamination such as H2O, to less than a monolayer level. In addition, each tube can be pumped down to UHV pressure regime to avoid further cross contamination between tubes or particle generation. Since some of the process requires elevated temperature, all wafers are placed vertically on the quartz boat to prevent any wafer sagging as in a vertical furnace. Furthermore, before any wafers are placed into the transfer chamber, they are loaded into a load/unload chamber, which is the sole connection to the ambient air, to be purged and pumped so as to minimize particles and contamination.
    • 簇系统控制在硅衬底上沉积或生长的膜的界面性质。 该系统包括多个水平石英腔或管,每个水平的石英腔或管可以容纳大量的晶片,传送室和装载/卸载室。 可以在不同环境空气的情况下,在不同的管中顺序执行若干工艺步骤。 传输室连接它们,并允许晶片在绝对控制的特高压环境中从一个管到另一个管输送,将任何污染(例如H 2 O)限制到小于单层。 此外,每个管可以泵送到特高压压力状态,以避免管之间的进一步交叉污染或产生颗粒。 由于某些过程需要升高的温度,因此将所有晶片垂直放置在石英舟上,以防止垂直炉中出现任何晶片下垂。 此外,在将任何晶片放入转移室之前,它们被装载到与环境空气的唯一连接的装载/卸载室中,以被清除和泵送,以使颗粒和污染物最小化。
    • 10. 发明授权
    • Germanium lateral bipolar junction transistor
    • 锗横向双极结晶体管
    • US08586441B1
    • 2013-11-19
    • US13611606
    • 2012-09-12
    • Jin CaiKevin K. ChanChristopher P. D'EmicBahman HekmatshoartabariTak H. NingDae-Gyu Park
    • Jin CaiKevin K. ChanChristopher P. D'EmicBahman HekmatshoartabariTak H. NingDae-Gyu Park
    • H01L21/331
    • H01L29/6625H01L29/161H01L29/735
    • A germanium lateral bipolar junction transistor (BJT) is formed employing a germanium-on-insulator (GOI) substrate. A silicon passivation layer is deposited on the top surface of a germanium layer in the GOI substrate. Shallow trench isolation structures, an extrinsic base region structure, and a base spacer are subsequently formed. A germanium emitter region, a germanium base region, and a germanium collector region are formed within the germanium layer by ion implantation. A silicon emitter region, a silicon base region, and a silicon collector region are formed in the silicon passivation layer. After optional formation of an emitter contact region and a collector contact region, metal semiconductor alloy regions can be formed. A wide gap contact for minority carriers is provided between the silicon base region and the germanium base region and between the silicon emitter region and the germanium emitter region.
    • 使用绝缘体上的锗(GOI)衬底形成锗横向双极结型晶体管(BJT)。 在GOI衬底的锗层的顶表面上沉积硅钝化层。 随后形成浅沟槽隔离结构,非本征基区结构和基底间隔物。 通过离子注入在锗层内形成锗发射极区,锗基区和锗集电极区。 在硅钝化层中形成硅发射极区域,硅基区域和硅集电极区域。 在可选地形成发射极接触区域和集电极接触区域之后,可以形成金属半导体合金区域。 在硅基区和锗基区之间以及硅发射极区和锗发射极区之间提供少量载流子的宽间隙接触。