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1. 发明申请

US20100140584A1 METHOD FOR PRODUCING CATALYST-FREE SINGLE CRYSTAL SILICON NANOWIRES, NANOWIRES PRODUCED BY THE METHOD AND NANODEVICE COMPRISING THE NANOWIRES 有权
标题翻译：用于生产无催化单晶硅纳米管的方法，由该方法生产的纳米微粒和纳米纳米粒子的纳米器件
公开(公告)号：US20100140584A1
公开(公告)日：2010-06-10
申请号：US12708027
申请日：2010-02-18
申请人： Eun Kyung LEE , Dongmok WHANG , Byoung Lyong CHOI , Byung Sung KIM
发明人： Eun Kyung LEE , Dongmok WHANG , Byoung Lyong CHOI , Byung Sung KIM
IPC分类号： H01L29/66
CPC分类号： H01L29/0665 , B82Y10/00 , C30B25/00 , C30B29/06 , C30B29/60 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L29/0673 , H01L29/0676 , Y10S977/762 , Y10S977/89 , Y10S977/891 , Y10S977/892 , Y10S977/893
摘要： Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal catalyst can be prevented from being introduced into the nanowires, contributing to an improvement in the electrical and optical properties of the nanowires. Also disclosed herein are nanowires produced by the method and nanodevice comprising the nanowires.
摘要翻译：本文公开了一种生产无催化剂的单晶硅纳米线的方法。根据该方法，可以简单且经济地制造纳米线，而不使用任何金属催化剂。此外，可以防止包含在金属催化剂中的杂质被引入纳米线中，有助于纳米线的电学和光学性质的改善。本文还公开了通过包括纳米线的方法和纳米器件制备的纳米线。

2. 发明申请

US20090152527A1 METHOD FOR PRODUCING CATALYST-FREE SINGLE CRYSTAL SILICON NANOWIRES, NANOWIRES PRODUCED BY THE METHOD AND NANODEVICE COMPRISING THE NANOWIRES 有权
标题翻译：用于生产无催化单晶硅纳米管的方法，由该方法生产的纳米微粒和纳米纳米粒子的纳米器件
公开(公告)号：US20090152527A1
公开(公告)日：2009-06-18
申请号：US12128362
申请日：2008-05-28
申请人： Eun Kyung LEE , Dongmok WHANG , Byoung Lyong CHOI , Byung Sung KIM
发明人： Eun Kyung LEE , Dongmok WHANG , Byoung Lyong CHOI , Byung Sung KIM
IPC分类号： H01L21/20 , H01L29/66
CPC分类号： H01L29/0665 , B82Y10/00 , C30B25/00 , C30B29/06 , C30B29/60 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L29/0673 , H01L29/0676 , Y10S977/762 , Y10S977/89 , Y10S977/891 , Y10S977/892 , Y10S977/893
摘要： Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal catalyst can be prevented from being introduced into the nanowires, contributing to an improvement in the electrical and optical properties of the nanowires. Also disclosed herein are nanowires produced by the method and nanodevice comprising the nanowires.
摘要翻译：本文公开了一种生产无催化剂的单晶硅纳米线的方法。根据该方法，可以简单且经济地制造纳米线，而不使用任何金属催化剂。此外，可以防止包含在金属催化剂中的杂质被引入纳米线中，有助于纳米线的电学和光学性质的改善。本文还公开了通过包括纳米线的方法和纳米器件制备的纳米线。

3. 发明申请

US20100108984A1 QUANTUM DOT ELECTROLUMINESCENT DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：量子电致发光器件及其制造方法
公开(公告)号：US20100108984A1
公开(公告)日：2010-05-06
申请号：US12534226
申请日：2009-08-03
申请人： Kyung Sang CHO , Byoung Lyong CHOI , Eun Kyung LEE
发明人： Kyung Sang CHO , Byoung Lyong CHOI , Eun Kyung LEE
IPC分类号： H01L33/00 , H01L21/28
CPC分类号： H05B33/14 , C09K11/025 , C09K11/565 , C09K11/883 , H01L51/0037 , H01L51/0039 , H01L51/502 , H01L51/5048
摘要： A quantum dot electroluminescent device that includes a substrate, a quantum dot light-emitting layer disposed on the substrate, a first electrode which injects charge carriers into the quantum dot light-emitting layer, a second electrode which injects charge carriers, which have an opposite charge than the charge carriers injected by the first electrode, into the quantum dot light-emitting layer, a hole transport layer disposed between the first electrode and the quantum dot light-emitting layer, and an electron transport layer disposed between the second electrode and the quantum dot light-emitting layer, wherein the quantum dot light-emitting layer has a first surface in contact with the hole transport layer and a second surface in contact with an electron transport layer, and wherein the first surface has an organic ligand distribution that is different from an organic ligand distribution of the second surface.
摘要翻译：一种量子点电致发光器件，包括衬底，设置在衬底上的量子点发光层，将电荷载流子注入量子点发光层的第一电极，注入电荷载流子的第二电极，其具有相反的电荷比由第一电极注入的电荷载流子进入量子点发光层，设置在第一电极和量子点发光层之间的空穴传输层和设置在第二电极和量子点发光层之间的电子传输层量子点发光层，其中量子点发光层具有与空穴传输层接触的第一表面和与电子传输层接触的第二表面，并且其中第一表面具有有机配体分布不同于第二表面的有机配体分布。

4. 发明申请

US20090008628A1 LIGHT-EMITTING DEVICE AND LIGHT-RECEIVING DEVICE USING TRANSISTOR STRUCTURE 有权
标题翻译：使用晶体管结构的发光器件和光接收器件
公开(公告)号：US20090008628A1
公开(公告)日：2009-01-08
申请号：US12031287
申请日：2008-02-14
申请人： Byoung Lyong CHOI , Kyung Sang CHO , Eun Kyung LEE , O Gweon SEO
发明人： Byoung Lyong CHOI , Kyung Sang CHO , Eun Kyung LEE , O Gweon SEO
IPC分类号： H01L33/00 , H01L29/08 , H01L29/06
CPC分类号： H01L51/5296 , B82Y20/00 , H01L51/0545 , H01L51/5012 , H01L51/5203
摘要： Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction parallel to these electrodes. In the light-emitting device using the transistor structure, it is possible to adjust the mobility of electrons or holes and to selectively set a light-emitting region through the control of the magnitude of voltage applied to the gate electrode, thus increasing the lifespan of the light-emitting device, facilitating the manufacturing process thereof, and realizing light-emitting or light-receiving properties having high efficiency and high purity.
摘要翻译：公开了一种使用晶体管结构的发光装置，其包括基板，第一栅电极，第一绝缘层，源电极，漏电极和形成在源电极和漏电极之间的发光层，与这些电极平行的方向。在使用晶体管结构的发光装置中，可以通过控制施加到栅电极的电压的大小来调节电子或空穴的迁移率并选择性地设置发光区域，从而增加寿命发光装置，便于其制造工艺，并实现高效率和高纯度的发光或光接收性能。

5. 发明申请

US20100144126A1 METHODS FOR SITE-SELECTIVE GROWTH OF HORIZONTAL NANOWIRES, NANOWIRES GROWN BY THE METHODS AND NANODEVICES COMPRISING THE NANOWIRES 有权
标题翻译：用于选择性生长的水平纳米线的方法，由纳米级纳米线形成的纳米纳米线的方法和纳米器件
公开(公告)号：US20100144126A1
公开(公告)日：2010-06-10
申请号：US12708007
申请日：2010-02-18
申请人： Eun Kyung LEE , Byoung Lyong CHOI , Young KUK , Je Hyuk CHOI , Hun Huy JUNG
发明人： Eun Kyung LEE , Byoung Lyong CHOI , Young KUK , Je Hyuk CHOI , Hun Huy JUNG
IPC分类号： H01L21/203
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , H01L21/02538 , H01L21/02543 , H01L21/02546 , H01L21/02551 , H01L21/02568 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L31/035281 , H01L33/08 , H01L33/20 , Y10S977/70 , Y10S977/762 , Y10S977/84
摘要： Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires.
摘要翻译：提供了水平纳米线场地选择性生长的方法。根据该方法，具有预定长度和直径的水平纳米线可以在平行于基板的方向上在所需位置选择性地生长，从而制造具有高集成度的装置。还提供了通过包括纳米线的方法和纳米器件生长的纳米线。

6. 发明申请

US20090057653A1 METHODS FOR SITE-SELECTIVE GROWTH OF HORIZONTAL NANOWIRES, NANOWIRES GROWN BY THE METHODS AND NANODEVICES COMPRISING THE NANOWIRES 有权
标题翻译：用于选择性生长的水平纳米线的方法，由纳米级纳米线形成的纳米纳米线的方法和纳米器件
公开(公告)号：US20090057653A1
公开(公告)日：2009-03-05
申请号：US12051513
申请日：2008-03-19
申请人： Eun Kyung LEE , Byoung Lyong CHOI , Young KUK , Je Hyuk CHOI , Hun Huy JUNG
发明人： Eun Kyung LEE , Byoung Lyong CHOI , Young KUK , Je Hyuk CHOI , Hun Huy JUNG
IPC分类号： H01L29/06 , H01L21/311
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , H01L21/02538 , H01L21/02543 , H01L21/02546 , H01L21/02551 , H01L21/02568 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L31/035281 , H01L33/08 , H01L33/20 , Y10S977/70 , Y10S977/762 , Y10S977/84
摘要： Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires.
摘要翻译：提供了水平纳米线场地选择性生长的方法。根据该方法，具有预定长度和直径的水平纳米线可以在平行于基板的方向上在所需位置选择性地生长，从而制造具有高集成度的装置。还提供了通过包括纳米线的方法和纳米器件生长的纳米线。

7. 发明申请

US20080150425A1 INORGANIC ELECTROLUMINESCENT DEVICE COMPRISING AN INSULATING LAYER, METHOD FOR FABRICATING THE ELECTROLUMINESCENT DEVICE AND ELECTRONIC DEVICE COMPRISING THE ELECTROLUMINESCENT DEVICE 有权
标题翻译：包含绝缘层的无机电致发光器件，用于制造电致发光器件的方法和包含电致发光器件的电子器件
公开(公告)号：US20080150425A1
公开(公告)日：2008-06-26
申请号：US11753129
申请日：2007-05-24
申请人： Kyung Sang CHO , Byoung Lyong CHOI , Jae Ho YOU , Eun Kyung LEE
发明人： Kyung Sang CHO , Byoung Lyong CHOI , Jae Ho YOU , Eun Kyung LEE
IPC分类号： H01J1/62 , H01J9/02
CPC分类号： H05B33/22
摘要： Disclosed is an inorganic electroluminescent device. The inorganic electroluminescent device comprises a hole transport layer, a light-emitting layer, an inorganic electron transport layer and an electron injecting electrode sequentially formed on a hole injecting electrode wherein an insulating layer is formed between the electron injecting electrode and the inorganic electron transport layer.Further disclosed are a method for fabricating the electroluminescent device and an electronic device comprising the electroluminescent device.The inorganic electroluminescent device achieves uniform light emission from the entire light-emitting surface of the device, resulting in an improvement in the reliability and stability of the device. The inorganic electroluminescent device is suitable for use in the manufacture of electronic devices, including display devices, illuminators and backlight units.
摘要翻译：公开了一种无机电致发光器件。无机电致发光器件包括顺序形成在空穴注入电极上的空穴传输层，发光层，无机电子传输层和电子注入电极，其中在电子注入电极和无机电子传输层之间形成绝缘层。进一步公开的是制造电致发光器件的方法和包括电致发光器件的电子器件。无机电致发光器件实现了来自器件的整个发光表面的均匀发光，从而提高了器件的可靠性和稳定性。无机电致发光器件适用于电子设备的制造，包括显示设备，照明器和背光单元。

8. 发明申请

US20100065809A1 NANOWIRE COMPRISING SILICON RICH OXIDE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：包含硅氧化物的纳米颗粒及其制造方法
公开(公告)号：US20100065809A1
公开(公告)日：2010-03-18
申请号：US12350709
申请日：2009-01-08
申请人： Eun Kyung LEE , Byoung Lyong CHOI , Gyeong Su PARK , Jai Yong HAN
发明人： Eun Kyung LEE , Byoung Lyong CHOI , Gyeong Su PARK , Jai Yong HAN
IPC分类号： H01L29/66 , H01L21/20
CPC分类号： B82Y20/00 , B82Y40/00 , C01B33/113 , H01L29/0669 , H01L29/068 , H01L29/66 , H01L33/18
摘要： Disclosed herein is a nanowire including silicon rich oxide and a method for producing the same. The nanowire exhibits excellent electrically conducting properties and optical characteristics, and therefore is effectively used in a variety of applications including, for example, solar cells, sensors, photodetectors, light emitting diodes, laser diodes, EL devices, PL devices, CL devices, FETs, CTFs, surface plasmon waveguides, MOS capacitors and the like.
摘要翻译：本文公开了包含富硅氧化物的纳米线及其制造方法。纳米线表现出优异的导电性能和光学特性，因此有效地用于各种应用中，包括例如太阳能电池，传感器，光电探测器，发光二极管，激光二极管，EL器件，PL器件，CL器件，FET ，CTF，表面等离子体波导，MOS电容器等。

9. 发明申请

US20090009057A1 QUANTUM DOT OPTICAL DEVICE 审中-公开
标题翻译：量子光学器件
公开(公告)号：US20090009057A1
公开(公告)日：2009-01-08
申请号：US12032252
申请日：2008-02-15
申请人： Eun Kyung LEE , Jong Min KIM , Byoung Lyong CHOI , Kyung Sang CHO
发明人： Eun Kyung LEE , Jong Min KIM , Byoung Lyong CHOI , Kyung Sang CHO
IPC分类号： H01J1/63 , H01L31/0336
CPC分类号： H05B33/22
摘要： Disclosed herein is a quantum dot optical device, including: a substrate; a hole injection electrode; a hole transport layer; a quantum dot luminescent layer; an electron transport layer; and an electron injection electrode, wherein a light-emitting surface of the device has a periodical projection structure.
摘要翻译：本发明公开了一种量子点光学装置，包括：基板; 空穴注入电极; 空穴传输层; 量子点发光层; 电子传输层; 和电子注入电极，其中该器件的发光表面具有周期性的投影结构。

10. 发明申请

US20110204321A1 METHOD FOR PRODUCING NANOWIRES USING A POROUS TEMPLATE 有权
标题翻译：使用多孔模板生产纳米微粒的方法
公开(公告)号：US20110204321A1
公开(公告)日：2011-08-25
申请号：US13099768
申请日：2011-05-03
申请人： Byoung Lyong CHOI , Jong Min KIM , Eun Kyung LEE
发明人： Byoung Lyong CHOI , Jong Min KIM , Eun Kyung LEE
IPC分类号： H01L29/06 , B32B3/00 , B82Y30/00
CPC分类号： H01L29/0665 , B82Y10/00 , C30B29/60 , H01L29/0673 , H01L29/0676 , Y10T428/249994
摘要： Disclosed herein is a method for producing nanowires. The method comprises the steps of providing a porous template with a plurality of holes in the form of tubes, filling the tubes with nanoparticles or nanoparticle precursors, and forming the filled nanoparticles or nanoparticle precursors into nanowires. According to the method, highly rectilinear and well-ordered nanowires can be produced in a simple manner.
摘要翻译：本文公开了一种生产纳米线的方法。该方法包括以下步骤：提供具有管形式的多个孔的多孔模板，用纳米颗粒或纳米颗粒前体填充管，并将填充的纳米颗粒或纳米颗粒前体形成纳米线。根据该方法，可以以简单的方式制备高度直线和有序的纳米线。

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