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1. 发明授权

US07311903B2 Glycosylated human interferon alpha isoform 失效
标题翻译：糖基化人类干扰素α同种型
公开(公告)号：US07311903B2
公开(公告)日：2007-12-25
申请号：US10653350
申请日：2003-09-02
申请人： Eun Jung Lee , Hyung Ki Park , Hyun Seok Kim , Ji Sook Park , Yeon Hyang Kim , Hyune Soo Lee , Hyung Kon Koh , Myung Suk Oh
发明人： Eun Jung Lee , Hyung Ki Park , Hyun Seok Kim , Ji Sook Park , Yeon Hyang Kim , Hyune Soo Lee , Hyung Kon Koh , Myung Suk Oh
IPC分类号： A61K38/21 , C07K17/00
CPC分类号： C07K14/56
摘要： The present invention relates to an amino acid-modified human interferon alpha isoform having at least one of the Asn-Xaa-Ser/Thr (N-X-S/T) sequence formed at a specific site so that glycosylation takes place at this site and a gene encoding the same, an expression vector comprising the gene, and a method for producing glycosylated human interferon alpha isoform by transforming or transfecting an eukaryotic cell with the expression vector, culturing the transfected or transformed cell and isolating the glycosylated human interferon alpha isoform from the culture, the glycosylated human interferon alpha isoform produced therefrom and a pharmaceutical composition comprising the same.
摘要翻译：本发明涉及具有在特定部位形成的至少一种Asn-Xaa-Ser / Thr（NXS / T）序列的氨基酸修饰的人类干扰素α同种型，使得在该位点发生糖基化，并编码基因相同的包含该基因的表达载体和通过用表达载体转化或转染真核细胞来产生糖基化的人干扰素α同种型的方法，培养转染或转化的细胞并从培养物中分离糖基化的人干扰素α同种型，由其制备的糖基化的人干扰素α同种型和包含其的药物组合物。

2. 发明申请

US20050019871A1 Glycosylated human interferon alpha isoform 失效
标题翻译：糖基化人类干扰素α同种型
公开(公告)号：US20050019871A1
公开(公告)日：2005-01-27
申请号：US10653350
申请日：2003-09-02
申请人： Eun Jung Lee , Hyung Park , Hyun Seok Kim , Ji Sook Park , Yeon Hyang Kim , Hyune Soo Lee , Hyung Kon Koh , Myung Suk Oh
发明人： Eun Jung Lee , Hyung Park , Hyun Seok Kim , Ji Sook Park , Yeon Hyang Kim , Hyune Soo Lee , Hyung Kon Koh , Myung Suk Oh
IPC分类号： C07K14/56 , C12P21/02 , C07H21/04
CPC分类号： C07K14/56
摘要： The present invention relates to an amino acid-modified human interferon alpha isoform having at least one of the Asn-Xaa-Ser/Thr (N-X-S/T) sequence formed at a specific site so that glycosylation takes place at this site and a gene encoding the same, an expression vector comprising the gene, and a method for producing glycosylated human interferon alpha isoform by transforming or transfecting an eukaryotic cell with the expression vector, culturing the transfected or transformed cell and isolating the glycosylated human interferon alpha isoform from the culture, the glycosylated human interferon alpha isoform produced therefrom and a pharmaceutical composition comprising the same.
摘要翻译：本发明涉及具有在特定部位形成的至少一种Asn-Xaa-Ser / Thr（NXS / T）序列的氨基酸修饰的人类干扰素α同种型，使得在该位点发生糖基化，并编码基因相同的包含该基因的表达载体和通过用表达载体转化或转染真核细胞来产生糖基化的人干扰素α同种型的方法，培养转染或转化的细胞并从培养物中分离糖基化的人干扰素α同种型，由其制备的糖基化的人干扰素α同种型和包含其的药物组合物。

3. 发明授权

US07344858B2 Glycosylated human granulocyte colony-stimulating factor (G-CSF) isoform 失效
标题翻译：糖基化的人粒细胞集落刺激因子（G-CSF）同种型
公开(公告)号：US07344858B2
公开(公告)日：2008-03-18
申请号：US10651395
申请日：2003-08-29
申请人： Eun Jung Lee , Hyun Seok Kim , Jong Sang Chung , Ki Wan Kim , Yeon Hyang Kim , Hyune Soo Lee , Hyung Kon Koh , Myung Suk Oh
发明人： Eun Jung Lee , Hyun Seok Kim , Jong Sang Chung , Ki Wan Kim , Yeon Hyang Kim , Hyune Soo Lee , Hyung Kon Koh , Myung Suk Oh
IPC分类号： C12N15/27 , C12N15/66 , C07K14/535 , A61K38/18
CPC分类号： C07K14/535 , A61K38/00
摘要： Disclosed are human G-CSF isoforms having a modified amino acid sequence containing a glycosylation sequence Asn-X-Ser/Thr (N-X-S/T) at one or more specific amino acid positions according to the present invention, genes encoding the human G-CSF isoforms, and expression vectors carrying the genes, eukaryotic cells transformed or transfected with the expression vectors. Also, the present invention discloses a method of preparing a glycosylated human G-CSF isoform, comprising the steps of culturing the transformant or transfectant and isolating a glycosylated human G-CSF isoform from the culture supernatant or cell lysates, a human G-CSF isoform prepared by the method, and a pharmaceutical composition comprising the human G-CSF isoform.
摘要翻译：公开了具有在本发明的一个或多个特定氨基酸位置上含有糖基化序列Asn-X-Ser / Thr（NXS / T）的修饰氨基酸序列的人G-CSF同种型，编码人G-CSF的基因同种型和携带基因的表达载体，用表达载体转化或转染的真核细胞。此外，本发明公开了一种制备糖基化的人G-CSF同工型的方法，其包括培养转化体或转染子并从培养上清或细胞裂解物，人G-CSF同工型分离糖基化的人G-CSF同种型的步骤通过该方法制备，以及包含人G-CSF同种型的药物组合物。

4. 发明授权

US08885409B2 Non-volatile memory, method of operating the same, memory system including the same, and method of operating the system 有权
标题翻译：非易失性存储器，操作方法，包括相同的存储器系统以及操作系统的方法
公开(公告)号：US08885409B2
公开(公告)日：2014-11-11
申请号：US13618604
申请日：2012-09-14
申请人： Sang Hoon Lee , Hyun Seok Kim , Sung-Hwan Bae , Jong-Nam Baek , Jae Yong Jeong
发明人： Sang Hoon Lee , Hyun Seok Kim , Sung-Hwan Bae , Jong-Nam Baek , Jae Yong Jeong
IPC分类号： G11C16/04
CPC分类号： G11C16/04 , G11C16/0483 , G11C16/06 , G11C16/26 , G11C29/00
摘要： A nonvolatile memory device includes an array of nonvolatile memory cells and a plurality of page buffers configured to receive a plurality of pages of data read from the same page in the array using different read voltage conditions. A control circuit is provided, which is electrically coupled to the plurality of page buffers. The control circuit is configured to perform a test operation by driving the plurality of page buffers with control signals that cause generation within the nonvolatile memory device of a string of XOR data bits, which are derived from a comparison of at least two of the multiple pages of data read from the same page of nonvolatile memory cells using the different read voltage conditions. An input/output device is provided, which is configured to output test data derived from the string of XOR data bits to another device located external to the nonvolatile memory device.
摘要翻译：非易失性存储器件包括非易失性存储器单元的阵列和多个页缓冲器，其被配置为使用不同的读取电压条件从阵列中的同一页面接收多页数据。提供了一种控制电路，其电耦合到多个页面缓冲器。控制电路被配置为通过用控制信号驱动多个页面缓冲器来执行测试操作，该控制信号导致非易失性存储器件内的异或数据位串的产生，这是从多个页面中的至少两个的比较导出的使用不同的读取电压条件从同一页的非易失性存储单元读取数据。提供了一种输入/输出设备，其被配置为将从XOR数据位串导出的测试数据输出到位于非易失性存储器件外部的另一个设备。

5. 发明授权

US08503212B2 Semiconductor memory apparatus with power-meshed structure 失效
标题翻译：具有电力网格结构的半导体存储器件
公开(公告)号：US08503212B2
公开(公告)日：2013-08-06
申请号：US12843647
申请日：2010-07-26
申请人： Boo Ho Jung , Jun Ho Lee , Hyun Seok Kim , Sun Ki Cho , Yang Hee Kim , Young Won Kim
发明人： Boo Ho Jung , Jun Ho Lee , Hyun Seok Kim , Sun Ki Cho , Yang Hee Kim , Young Won Kim
IPC分类号： G11C5/06 , H01L23/52
CPC分类号： G11C5/063 , G11C5/025
摘要： A semiconductor memory apparatus includes a plurality of banks each having a plurality of cell mats; a plurality of power lines disposed over predetermined portions of each of the plurality of banks; a column control region disposed adjacent to at least one of sides of each bank which are perpendicular to an extending direction of the power lines; and a conductive plate disposed over the column control region and electrically connected to the plurality of power lines.
摘要翻译：一种半导体存储装置，包括：多个存储体，每个存储体具有多个单元格层; 多个电源线，布置在所述多个银行的每一个的预定部分上; 与每个组的至少一个侧面相邻设置的列控制区，其垂直于电力线的延伸方向; 以及设置在所述列控制区域上并电连接到所述多个电力线的导电板。

6. 发明申请

US20130178356A1 ABSORBENT FOR HEAVY METAL AND FILTER DEVICE INCLUDING THE SAME 审中-公开
标题翻译：吸收重金属和过滤装置，包括它们
公开(公告)号：US20130178356A1
公开(公告)日：2013-07-11
申请号：US13555651
申请日：2012-07-23
申请人： Hyun Seok Kim , Bok Soon Kwon , Dong Jin Ham , Hyo Rang Kang , Joon Seon Jeong
发明人： Hyun Seok Kim , Bok Soon Kwon , Dong Jin Ham , Hyo Rang Kang , Joon Seon Jeong
IPC分类号： B01J20/02 , B01J20/04 , B01J20/30 , B01J20/24 , B01J20/26 , B01J20/22 , B01J20/10
CPC分类号： C02F1/283 , B01J20/06 , B01J20/18 , B01J20/28007 , B01J20/2803 , B01J20/28057 , B01J20/30 , B01J20/3204 , B01J20/3248 , B82Y30/00 , C02F1/281 , C02F2101/103 , C02F2101/20 , C02F2103/06
摘要： A heavy metal absorbent, and a filter device including the same, include heavy metal absorbing particles each having a surface with a —NOx (1≦x≦2) functional group. The heavy metal absorbing particles are one selected from inorganic oxide particles, graphite-based carbon particles, and a combination thereof.
摘要翻译：重金属吸收剂和包括其的过滤装置包括各自具有-NO x（1 x 2）官能团的表面的重金属吸收颗粒。重金属吸收粒子是选自无机氧化物粒子，石墨类碳粒子及其组合的粒子。

7. 发明申请

US20130036261A1 METHOD FOR OPERATING MEMORY CONTROLLER, AND MEMORY SYSTEM INCLUDING THE SAME 有权
标题翻译：用于操作存储器控制器的方法，以及包括其的存储器系统
公开(公告)号：US20130036261A1
公开(公告)日：2013-02-07
申请号：US13564076
申请日：2012-08-01
申请人： Hyun Seok Kim , Sung Bin Kim , Sung-Hwan Bae , Jong-Nam Baek , Sang Hoon Lee
发明人： Hyun Seok Kim , Sung Bin Kim , Sung-Hwan Bae , Jong-Nam Baek , Sang Hoon Lee
IPC分类号： G06F12/00
CPC分类号： G06F13/16 , G06F11/00 , G06F11/1048 , G06F11/1076 , G11C16/26 , G11C16/349
摘要： A method for operating a memory controller capable of controlling a maximum count of a read retry operation is disclosed. The method includes programming a first real time clock (RTC) value indicating a time-of-day when a program operation is performed when the program operation for programming a data to a storage region of a non-volatile memory, obtaining information for the storage region by using the first RTC value read from the non-volatile memory and a second RTC value indicating a time-of-day when a read operation is performed, when the read operation for the data programmed to the storage region is performed, and decreasing a maximum count of a read retry operation by using the information, when the read retry operation is performed for the storage region.
摘要翻译：公开了一种用于操作能够控制读取重试操作的最大计数的存储器控制器的方法。该方法包括编程第一实时时钟（RTC）值，其指示在将数据编程到非易失性存储器的存储区域的程序操作时执行程序操作的时间，获得用于存储的信息通过使用从非易失性存储器读取的第一RTC值和表示执行读取操作的时间的第二RTC值，执行对存储区域的编程的数据的读取操作，并且减少当对存储区域执行读取重试操作时，通过使用该信息的重试操作的最大计数。

8. 发明申请

US20120093908A1 METAL OXIDE STERILIZING CATALYST, AND STERILIZING DEVICE AND SYSTEM INCLUDING THE SAME 审中-公开
标题翻译：金属氧化物灭菌催化剂，灭菌装置和包括其的系统
公开(公告)号：US20120093908A1
公开(公告)日：2012-04-19
申请号：US13170906
申请日：2011-06-28
申请人： Jae Eun Kim , Sang Min Ji , Joo Wook Lee , Hyo Rang Kang , Ho Jung Yang , Hyun Seok Kim , Chang Hyun Kim
发明人： Jae Eun Kim , Sang Min Ji , Joo Wook Lee , Hyo Rang Kang , Ho Jung Yang , Hyun Seok Kim , Chang Hyun Kim
IPC分类号： A01N25/08 , B01J21/06 , B01J23/20 , B01J23/24 , B01J21/08 , B01J21/12 , B01J23/50 , B01J23/72 , B01J23/06 , B01J23/75 , B01J23/755 , B01J23/34 , B01J23/42 , B01J23/44 , B01J23/46 , B01J23/52 , A01N59/00 , A01P1/00 , B01J35/02
CPC分类号： B01J23/63 , A61L2/232 , A61L2/26 , A61L2202/11 , A61L2202/122 , B01J21/066 , B01J23/002 , B01J23/10 , B01J29/084 , B01J37/04 , B01J2523/00 , B01J2523/18 , B01J2523/3712 , B01J2523/48
摘要： Disclosed is a sterilizing catalyst, a sterilizing device and a sterilizing system, the sterilizing catalyst includes a metal lattice including a metal oxide, and an oxygen vacancy-inducing metal that is integrated or encompassed within the metal lattice. The metal oxide is an oxide of a divalent or multivalent metal. The oxygen vacancy-inducing metal has an oxidation number lower than that of the divalent or multivalent metal.
摘要翻译：公开了一种消毒催化剂，杀菌装置和灭菌系统，所述灭菌催化剂包括金属晶格，所述金属晶格包含金属氧化物，所述氧空位诱导金属被整合或包围在所述金属晶格内。金属氧化物是二价或多价金属的氧化物。氧空位诱导金属的氧化值低于二价或多价金属的氧化值。

9. 发明申请

US20110279235A1 RADIO FREQUENCY IDENTIFICATION (RFID) TAG AND INTERROGATOR FOR SUPPORTING NORMAL MODE AND SECURE MODE, AND OPERATION METHOD THEREOF 有权
标题翻译：用于支持正常模式和安全模式的无线电频率识别（RFID）标签和内部装置及其操作方法
公开(公告)号：US20110279235A1
公开(公告)日：2011-11-17
申请号：US13108397
申请日：2011-05-16
申请人： Sang Yeoun LEE , Kang Bok Lee , Heyung Sub Lee , Dong Beom Shin , Hyun Seok Kim , You Sung Kang , Joo Sang Park , Cheol Sig Pyo , Jong Suk Chae
发明人： Sang Yeoun LEE , Kang Bok Lee , Heyung Sub Lee , Dong Beom Shin , Hyun Seok Kim , You Sung Kang , Joo Sang Park , Cheol Sig Pyo , Jong Suk Chae
IPC分类号： H04Q5/22
CPC分类号： H04L9/3273 , G06F21/44 , G06F21/445 , H04L9/3271 , H04L63/08 , H04L63/0869 , H04L2209/805 , H04Q2213/095 , H04W12/06
摘要： A Radio Frequency Identification (RFID) tag and an interrogator that support a normal mode and a secure mode, and operating methods thereof are provided. The RFID tag may notify the interrogator of whether a current operating mode of the RFID tag is the normal mode or the secure mode, may perform different inventory processes based on the current operating mode, and may perform an authentication of the interrogator. Here, the RFID tag and the interrogator may also perform a mutual authentication.
摘要翻译：提供了支持正常模式和安全模式的射频识别（RFID）标签和询问器及其操作方法。 RFID标签可以通知询问器RFID标签的当前操作模式是正常模式还是安全模式，可以基于当前操作模式执行不同的库存处理，并且可以执行询问器的认证。这里，RFID标签和询问器也可以进行相互认证。

10. 发明申请

US20110235385A1 SEMICONDUCTOR MEMORY APPARATUS WITH POWER-MESHED STRUCTURE 失效
标题翻译：具有功率结构的半导体存储器件
公开(公告)号：US20110235385A1
公开(公告)日：2011-09-29
申请号：US12843647
申请日：2010-07-26
申请人： Boo Ho JUNG , Jun Ho Lee , Hyun Seok Kim , Sun Ki Cho , Yang Hee Kim , Young Won Kim
发明人： Boo Ho JUNG , Jun Ho Lee , Hyun Seok Kim , Sun Ki Cho , Yang Hee Kim , Young Won Kim
IPC分类号： G11C5/02
CPC分类号： G11C5/063 , G11C5/025
摘要： A semiconductor memory apparatus includes a plurality of banks each having a plurality of cell mats; a plurality of power lines disposed over predetermined portions of each of the plurality of banks; a column control region disposed adjacent to at least one of sides of each bank which are perpendicular to an extending direction of the power lines; and a conductive plate disposed over the column control region and electrically connected to the plurality of power lines.
摘要翻译：一种半导体存储装置，包括：多个存储体，每个存储体具有多个单元格层; 多个电源线，布置在所述多个银行的每一个的预定部分上; 与每个组的至少一个侧面相邻设置的列控制区，其垂直于电力线的延伸方向; 以及设置在所述列控制区域上并电连接到所述多个电力线的导电板。

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