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    • 6. 发明授权
    • Microbridge superconductor device utilizing stepped junctions
    • 使用阶梯结的微桥超导体器件
    • US5962866A
    • 1999-10-05
    • US671512
    • 1996-06-27
    • Mark S. DiIorioShozo YoshizumiKai-Yueh Yang
    • Mark S. DiIorioShozo YoshizumiKai-Yueh Yang
    • H01L39/22H01L29/06H01L31/0256
    • H01L39/225
    • A superconductor device has a substrate with an inclined surface that divides the substrate surface into a lower planar substrate surface and an upper planar substrate surface. A lower layer of an anisotropic superconductor material is epitaxially deposited on the lower planar substrate surface so that an a-axis of the anisotropic superconductor material of the lower layer is exposed at a top edge of the lower layer. An upper layer of an anisotropic superconductor material is epitaxially deposited on the upper planar substrate surface so that an a-axis of the anisotropic superconductor material of the upper layer is exposed at a top edge of the upper layer. A layer of a non-superconductor material overlies the inclined surface and the layers of anisotropic superconductor material.
    • 超导体器件具有将基板表面分成下平面基板表面和上平面基板表面的倾斜表面的基板。 各向异性超导体材料的下层外延沉积在下平面基板表面上,使得下层的各向异性超导体材料的a轴在下层的顶部边缘处露出。 各向异性超导体材料的上层被外延沉积在上平面基板表面上,使得上层的各向异性超导体材料的a轴在上层的顶边缘处露出。 非超导体材料层覆盖倾斜表面和各向异性超导体材料层。
    • 9. 发明授权
    • High-TC microbridge superconductor device utilizing stepped edge-to-edge
SNS junction
    • High-TC微桥超导体器件采用阶梯式边缘到边缘SNS结
    • US5367178A
    • 1994-11-22
    • US894079
    • 1992-06-05
    • Mark S. DiIorioShozo YoshizumiKai-Yueh Yang
    • Mark S. DiIorioShozo YoshizumiKai-Yueh Yang
    • C01G1/00C01G3/00G01R33/035H01L39/22H01L39/24
    • H01L39/225Y10S505/702Y10S505/731Y10S505/742
    • A microbridge superconductor device includes a substrate, made of a material such as LaAlO.sub.3, having a lower planar substrate surface, an inclined surface having an overall upward inclination of from about 20 to about 80 degrees from the plane of the lower planar substrate surface, and an upper planar substrate surface parallel to the lower planar substrate surface and separated from the lower planar substrate surface by the inclined surface. A layer of a c-axis oriented superconductor material, made of a material such as YBa.sub.2 Cu.sub.3 O.sub.7-x, is epitaxially deposited on the lower planar substrate surface, and has an exposed a-axis edge adjacent the intersection of the lower planar substrate surface with the inclined surface. The a-axis exposed edge is beveled away from the intersection. A layer of a c-axis oriented superconductor material is epitaxially deposited on the upper planar substrate surface, and has an exposed a-axis edge adjacent the inclined surface. A gap lies between the two a-axis exposed edges. A layer of a non-superconductor material, such as silver, lies in the gap between the two exposed a-axis edges, thereby defining a SNS superconductor microbridge device. The layers of superconductor material are preferably patterned to form a Josephson junction device such as a superconducting quantum interference device.
    • 微桥超导体器件包括由诸如LaAlO 3的材料制成的衬底,具有较低的平面衬底表面,具有从下平面衬底表面的平面的总体向上倾斜约20至约80度的倾斜表面,以及 上平面基板表面,平行于下平面基板表面,并且通过倾斜表面与下平面基板表面分离。 由诸如YBa2Cu3O7-x的材料制成的c轴取向超导体材料层外延沉积在下平面基板表面上,并且具有与下平面基板表面相交的暴露的a轴边缘 倾斜面。 a轴暴露的边缘与交点相反。 在上平面基板表面上外延地沉积c轴取向的超导体材料层,并且具有与倾斜表面相邻的暴露的a轴边缘。 两个a轴暴露边缘之间有一个间隙。 非超导体材料(例如银)的层位于两个暴露的a轴边缘之间的间隙中,从而限定SNS超导体微桥装置。 超导体材料层优选地被图案化以形成诸如超导量子干涉装置的约瑟夫逊结装置。