专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07781309B2 Method for manufacturing direct bonded SOI wafer and direct bonded SOI wafer manufactured by the method 有权
公开(公告)号：US07781309B2
公开(公告)日：2010-08-24
申请号：US11614681
申请日：2006-12-21
申请人： Etsurou Morita , Shinji Okawa , Isoroku Ono
发明人： Etsurou Morita , Shinji Okawa , Isoroku Ono
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/2007 , H01L21/76251
摘要： A direct bonded SOI wafer having an entire buried oxide film layer covered and not exposed is manufactured by: (A) forming a laminated body by laminating a semiconductor wafer and a support wafer via an oxide film; and (B) forming a thin-film single crystal silicon layer on the support wafer using a buried oxide film layer by film-thinning the semiconductor wafer to a predetermined thickness. In a process (C) the entire buried oxide film layer is covered by a main surface on the laminating side of the support wafer and the single crystal silicon layer. The covering of the entire buried film layer is carried out by, between process (A) and (B), removing the oxide film formed on the circumferential end edge of the main surface on the laminating side and the chamfered portion to leave the oxide film only on the laminated surface except the circumferential end edge.

2. 发明申请

US20070148914A1 Process for Regeneration of a Layer Transferred Wafer and Regenerated Layer Transferred Wafer 有权
标题翻译：再生层转移晶片和再生层转移晶片的过程
公开(公告)号：US20070148914A1
公开(公告)日：2007-06-28
申请号：US11614745
申请日：2006-12-21
申请人： Etsurou Morita , Shinji Okawa , Isoroku Ono
发明人： Etsurou Morita , Shinji Okawa , Isoroku Ono
IPC分类号： B24B51/00 , H01L21/30
CPC分类号： B24B37/042 , H01L21/02032 , H01L21/76254
摘要： A processing time required for regeneration of a layer transferred wafer is reduced and the regeneration cost is lowered, while a removal amount at the regeneration is decreased the number of regeneration times is increased. A main surface of a semiconductor wafer (13) has a main flat portion (13d) and a chamfered portion (13c) formed in the periphery of the main flat portion (13d), an ion implanted area (13b) is formed by implanting ions only into the main flat portion (13d), a laminated body (16) is formed by laminating the main flat portion (13d) on a main surface of a support wafer (14), and moreover, the semiconductor wafer (13) is separated from a thin layer (17) in the ion implanted area (13b) by heat treatment at a predetermined temperature so as to obtain a thick layer transferred wafer (12), which is to be regenerated. The main flat portion (13d) of the semiconductor wafer (13) is formed to have a ring-shape step (13e) protruding from the chamfered portion (13c), and the semiconductor wafer (13) is separated from the thin layer (17) on the whole surface of the ion implanted area (13b) so that no step is generated in the periphery thereby to obtain the layer transferred wafer (12).
摘要翻译：减少转移晶片的再生所需的处理时间，降低再生成本，而再生时的去除量减少，再生次数增加。半导体晶片（13）的主表面具有主平坦部（13d）和形成在主平坦部（13d）周边的倒角部（13c），离子注入区域（13b）为通过仅将离子注入主平坦部分（13d）而形成，通过将主平坦部分（13d）层压在支撑晶片（14）的主表面上而形成层压体（16），此外，半导体通过在预定温度下的热处理将晶片（13）与离子注入区域（13b）中的薄层（17）分离，以获得待再生的厚层转移晶片（12）。半导体晶片（13）的主平坦部（13d）形成为具有从倒角部（13c）突出的环状台阶（13e），半导体晶片（13）与薄片在离子注入区域（13b）的整个表面上的层（17），使得在周边不产生任何步骤，从而获得层转移晶片（12）。

3. 发明授权

US07855129B2 Method for manufacturing direct bonded SOI wafer and direct bonded SOI wafer manufactured by the method 有权
标题翻译：通过该方法制造直接键合SOI晶片和直接键合SOI晶片的方法
公开(公告)号：US07855129B2
公开(公告)日：2010-12-21
申请号：US12778382
申请日：2010-05-12
申请人： Etsurou Morita , Shinji Okawa , Isoroku Ono
发明人： Etsurou Morita , Shinji Okawa , Isoroku Ono
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/2007 , H01L21/76251
摘要： A direct bonded SOI wafer having an entire buried oxide film layer covered and not exposed is manufactured by: (A) forming a laminated body by laminating a semiconductor wafer and a support wafer via an oxide film; and (B) forming a thin-film single crystal silicon layer on the support wafer using a buried oxide film layer by film-thinning the semiconductor wafer to a predetermined thickness. In a process (C) the entire buried oxide film layer is covered by a main surface on the laminating side of the support wafer and the single crystal silicon layer. The covering of the entire buried film layer is carried out by, between process (A) and (B), removing the oxide film formed on the circumferential end edge of the main surface on the laminating side and the chamfered portion to leave the oxide film only on the laminated surface except the circumferential end edge.
摘要翻译：通过以下方法制造具有被覆和未曝光的整个掩埋氧化膜层的直接键合SOI晶片：（A）通过氧化膜层压半导体晶片和支撑晶片来形成层叠体; 和（B）通过使半导体晶片薄膜化到预定厚度，使用掩埋氧化膜层在支撑晶片上形成薄膜单晶硅层。在工艺（C）中，整个掩埋氧化物膜层被支撑晶片和单晶硅层的层叠侧的主表面覆盖。通过在工序（A）和（B）之间进行整个掩埋膜层的覆盖，除去形成在层叠侧的主面的周向端缘上的氧化膜和倒角部，留下氧化膜仅在除了圆周端边缘之外的层压表面上。

4. 发明申请

US20070148912A1 Method for Manufacturing Direct Bonded SOI Wafer and Direct Bonded SOI Wafer Manufactured by the Method 有权
标题翻译：通过该方法制造直接键合的SOI晶片和直接键合的SOI晶片的方法
公开(公告)号：US20070148912A1
公开(公告)日：2007-06-28
申请号：US11614681
申请日：2006-12-21
申请人： Etsurou Morita , Shinji Okawa , Isoroku Ono
发明人： Etsurou Morita , Shinji Okawa , Isoroku Ono
IPC分类号： H01L21/30
CPC分类号： H01L21/2007 , H01L21/76251
摘要： There are provided a method for manufacturing a direct bonded SOI wafer in which the entire buried oxide film layer is covered and not exposed and a direct bonded SOI wafer. This is the improvement of a method for manufacturing a direct bonded SOI wafer comprising the process of (A) forming a laminated body by laminating a semiconductor wafer and a support wafer via an oxide film; and (B) forming a thin-film single crystal silicon layer on the support wafer using a buried oxide film layer by film-thinning the semiconductor wafer to a predetermined thickness, wherein in a process (C) the entire buried oxide film layer is covered by a main surface on the laminating side of the support wafer and the single crystal silicon layer. The covering of the entire buried oxide film layer is carried out by, between process (A) and (B), removing the oxide film formed on the circumferential end edge of the main surface on the laminating side and the chamfered portion to leave the oxide film only on the laminated surface except the circumferential end edge.
摘要翻译：提供了一种直接键合SOI晶片的制造方法，其中整个掩埋氧化物膜层被覆盖并且不被暴露，并且直接结合的SOI晶片。这是对直接键合SOI晶片的制造方法的改进，其包括以下工序：（A）通过氧化膜层叠半导体晶片和支撑晶片来形成层叠体; 和（B）通过将半导体晶片薄膜化为预定厚度，使用掩埋氧化物膜层在支撑晶片上形成薄膜单晶硅层，其中在（C）中，覆盖整个掩埋氧化物膜层的工艺（C）通过支撑晶片的层叠侧的主表面和单晶硅层。通过在工序（A）和（B）之间进行整个掩埋氧化膜层的覆盖，除去形成在层叠侧的主表面的周向端缘上的氧化膜和倒角部，留下氧化物仅在除了圆周端边缘之外的层压表面上的膜。

5. 发明授权

US07829436B2 Process for regeneration of a layer transferred wafer and regenerated layer transferred wafer 有权
标题翻译：再生层转移晶片和再生层转移晶片的工艺
公开(公告)号：US07829436B2
公开(公告)日：2010-11-09
申请号：US11614745
申请日：2006-12-21
申请人： Etsurou Morita , Shinji Okawa , Isoroku Ono
发明人： Etsurou Morita , Shinji Okawa , Isoroku Ono
IPC分类号： H01L21/46
CPC分类号： B24B37/042 , H01L21/02032 , H01L21/76254
摘要： A processing time required for regeneration of a layer transferred wafer is reduced and the regeneration cost is lowered, while a removal amount at the regeneration is decreased the number of regeneration times is increased. A main surface of a semiconductor wafer (13) has a main flat portion (13d) and a chamfered portion (13c) formed in the periphery of the main flat portion (13d), an ion implanted area (13b) is formed by implanting ions only into the main flat portion (13d), a laminated body (16) is formed by laminating the main flat portion (13d) on a main surface of a support wafer (14), and moreover, the semiconductor wafer (13) is separated from a thin layer (17) in the ion implanted area (13b) by heat treatment at a predetermined temperature so as to obtain a thick layer transferred wafer (12), which is to be regenerated. The main flat portion (13d) of the semiconductor wafer (13) is formed to have a ring-shape step (13e) protruding from the chamfered portion (13c), and the semiconductor wafer (13) is separated from the thin layer (17) on the whole surface of the ion implanted area (13b) so that no step is generated in the periphery thereby to obtain the layer transferred wafer (12).
摘要翻译：减少转移晶片的再生所需的处理时间，降低再生成本，而再生时的去除量减少，再生次数增加。半导体晶片（13）的主表面具有形成在主平坦部（13d）周边的主平面部（13d）和倒角部（13c），离子注入区（13b）通过注入离子仅在主平坦部分（13d）中，通过将主平坦部分（13d）层叠在支撑晶片（14）的主表面上而形成层压体（16），此外，半导体晶片（13）被分离通过在预定温度下进行热处理从离子注入区域（13b）中的薄层（17）开始，以获得待再生的厚层转移晶片（12）。半导体晶片（13）的主平面部（13d）形成为具有从倒角部（13c）突出的环状台阶（13e），半导体晶片（13）与薄层（17）分离）在离子注入区域（13b）的整个表面上，使得在周边不产生台阶，从而获得层转移晶片（12）。

6. 发明申请

US20070148917A1 Process for Regeneration of a Layer Transferred Wafer and Regenerated Layer Transferred Wafer 审中-公开
标题翻译：再生层转移晶片和再生层转移晶片的过程
公开(公告)号：US20070148917A1
公开(公告)日：2007-06-28
申请号：US11614792
申请日：2006-12-21
申请人： Etsurou Morita , Shinji Okawa , Isoroku Ono
发明人： Etsurou Morita , Shinji Okawa , Isoroku Ono
IPC分类号： H01L21/30
CPC分类号： H01L21/02032 , H01L21/76254
摘要： The regeneration cost is reduced when a layer transferred wafer is to be reused two times or more. Ions are implanted into a semiconductor wafer (13) to form an ion implanted area (13b) inside the semiconductor wafer (13), and a first laminated body (16) in which the wafer (13) is laminated on a first support wafer (14) is subjected to heat treatment so as to obtain a thick first layer transferred wafer (12). Then, an ion implanted area (23b) is formed inside the layer transferred wafer (12) by implanting ions into a second main surface (12c) of the first layer transferred wafer (12) on the side opposite to a separated surface (12a), and a second laminated body (26) in which the main surface (12c) of the wafer (12) is laminated onto a second support wafer (24) is subjected to heat treatment so as to obtain a thick second layer transferred wafer (22). And then, both surfaces of the layer transferred wafer (22) are polished to obtain a regenerated wafer (32). The separated surface (12a) of the wafer (12) and a separated surface (22a) of the wafer (22) have ring-shape steps (12b) and (22b) on each of the outer circumferential edges, and these ring-shape steps (12b) and (22b) are removed at the same time by polishing both surfaces of the second layer transferred wafer (22).
摘要翻译：当转移的晶片被重复使用两次或更多时，再生成本降低。将离子注入到半导体晶片（13）中以在半导体晶片（13）内部形成离子注入区域（13b）;以及第一层压体（16），其中晶片（13）层压在第一支撑晶片（14）进行热处理，以获得厚的第一层转移晶片（12）。然后，通过将离子注入到与分离表面相对的一侧的第一层转移晶片（12）的第二主表面（12c）中，在转移晶片（12）的内部形成离子注入区域（23b）并且将第二层叠体（26）进行热处理，其中晶片（12）的主表面（12c）层压在第二支撑晶片（24）上，以获得厚的第二层转移晶片（22）。然后，将转移晶片（22）的两个表面抛光以获得再生晶片（32）。晶片（12）的分离表面（12a）和晶片（22）的分离表面（22a）在每个外圆周边缘上具有环形台阶（12b）和（22b），并且通过抛光第二层转移晶片（22）的两个表面，同时去除这些环形步骤（12b）和（22b）。

7. 发明授权

US07718507B2 Bonded wafer and method of producing the same 有权
标题翻译：粘结晶片及其制造方法
公开(公告)号：US07718507B2
公开(公告)日：2010-05-18
申请号：US11716341
申请日：2007-03-08
申请人： Etsurou Morita , Kazuo Hujie , Isoroku Ono
发明人： Etsurou Morita , Kazuo Hujie , Isoroku Ono
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A bonded wafer is produced by bonding an ion-implanted wafer for an active layer onto a wafer for a supporting substrate, and thereafter exfoliating the wafer for the active layer at the ion-implanted position through a heat treatment and then polishing a terrace portion of the resulting active layer with a predetermined fixed grain abrasive cloth to remove island-shaped projections on the terrace portion while controlling a scattering of terrace width and smoothness of an outer peripheral face of the active layer.
摘要翻译：通过将用于有源层的离子注入晶片粘合到用于支撑衬底的晶片上，然后通过热处理在离子注入位置剥离活性层晶片，然后研磨露出部分所得到的活性层具有预定的固定颗粒研磨布，以在控制活性层的外周面的平台宽度和平滑度的同时控制露台部分上的岛状突起。

8. 发明申请

US20070243694A1 Bonded wafer and method of producing the same 有权
标题翻译：粘结晶片及其制造方法
公开(公告)号：US20070243694A1
公开(公告)日：2007-10-18
申请号：US11716341
申请日：2007-03-08
申请人： Etsurou Morita , Kazuo Hujie , Isoroku Ono
发明人： Etsurou Morita , Kazuo Hujie , Isoroku Ono
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A bonded wafer is produced by bonding an ion-implanted wafer for an active layer onto a wafer for a supporting substrate, and thereafter exfoliating the wafer for the active layer at the ion-implanted position through a heat treatment and then polishing a terrace portion of the resulting active layer with a predetermined fixed grain abrasive cloth to remove island-shaped projections on the terrace portion while controlling a scattering of terrace width and smoothness of an outer peripheral face of the active layer.
摘要翻译：通过将用于有源层的离子注入晶片粘合到用于支撑衬底的晶片上，然后通过热处理在离子注入位置剥离活性层晶片，然后研磨露出部分所得到的活性层具有预定的固定颗粒研磨布，以在控制活性层的外周面的平台宽度和平滑度的同时控制露台部分上的岛状突起。

9. 发明授权

US07951716B2 Wafer and method of producing the same 有权
标题翻译：晶片及其制造方法
公开(公告)号：US07951716B2
公开(公告)日：2011-05-31
申请号：US11707312
申请日：2007-02-16
申请人： Etsurou Morita , Kazuo Hujie , Isoroku Ono
发明人： Etsurou Morita , Kazuo Hujie , Isoroku Ono
IPC分类号： B24B7/30 , H01L21/461 , C03C15/00
CPC分类号： B24B37/042 , B24D13/147
摘要： A wafer is produced at a step of polishing a predetermined face of a wafer to flatten the predetermined face while supplying a polishing liquid onto a bonded abrasive cloth, wherein the bonded abrasive cloth comprises a urethane bonding material consisting of a soft segment having a polyfunctional isocyanate and a hard segment having a polyfunctional polyol and having an expansion ratio of 1.1-4 times and silica having an average particle size of 0.2-10 μm and a hydroxy group, and has a given ratio of the hard segment occupied in the urethane bonding material, a given volume ratio of silica and a given Shore D hardness.
摘要翻译：在将抛光液体供给到粘结磨料上的同时，在抛光晶片的预定面以平坦化工序，制造晶片，其中粘合磨布包括由具有多官能异氰酸酯的软链段组成的聚氨酯粘结材料具有多官能多元醇的硬链段，其膨胀率为1.1-4倍，平均粒径为0.2-10μm的二氧化硅和羟基，具有在氨基甲酸酯键合材料中占据的硬链段的给定比例，二氧化硅的给定体积比和给定的肖氏D硬度。

10. 发明申请

US20070197035A1 Wafer and method of producing the same 有权
标题翻译：晶片及其制造方法
公开(公告)号：US20070197035A1
公开(公告)日：2007-08-23
申请号：US11707312
申请日：2007-02-16
申请人： Etsurou Morita , Kazuo Hujie , Isoroku Ono
发明人： Etsurou Morita , Kazuo Hujie , Isoroku Ono
IPC分类号： B24B7/30 , H01L21/461 , C03C15/00
CPC分类号： B24B37/042 , B24D13/147
摘要： A wafer is produced at a step of polishing a predetermined face of a wafer to flatten the predetermined face while supplying a polishing liquid onto a bonded abrasive cloth, wherein the bonded abrasive cloth comprises a urethane bonding material consisting of a soft segment having a polyfunctional isocyanate and a hard segment having a polyfunctional polyol and having an expansion ratio of 1.1-4 times and silica having an average particle size of 0.2-10 μm and a hydroxy group, and has a given ratio of the hard segment occupied in the urethane bonding material, a given volume ratio of silica and a given Shore D hardness.
摘要翻译：在将抛光液体供给到粘结磨料上的同时，在抛光晶片的预定面以平坦化工序，制造晶片，其中粘合磨布包括由具有多官能异氰酸酯的软链段组成的聚氨酯粘结材料和具有多官能多元醇的膨胀率为1.1-4倍的硬链段和平均粒径为0.2-10μm的二氧化硅和羟基，并且具有在氨基甲酸酯粘合材料中占据的硬链段的给定比例，二氧化硅的给定体积比和给定的肖氏D硬度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式