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1. 发明授权

US07410355B2 Method for the heat treatment of substrates 失效
标题翻译：基板热处理方法
公开(公告)号：US07410355B2
公开(公告)日：2008-08-12
申请号：US11356697
申请日：2006-02-17
申请人： Ernst H. A. Granneman , Vladimir I. Kuznetsov , Xavier Pages , Pascal G. Vermont , Herbert Terhorst , Gert-Jan Snijders
发明人： Ernst H. A. Granneman , Vladimir I. Kuznetsov , Xavier Pages , Pascal G. Vermont , Herbert Terhorst , Gert-Jan Snijders
IPC分类号： H01L21/02
CPC分类号： H01L21/324 , H01L21/42 , H01L21/477 , H01L21/67109 , H01L21/67248 , H01L21/67784 , H01L21/6838
摘要： A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.
摘要翻译：衬底在反应器中在不改变反应器温度的情况下在不同温度下进行半导体制造工艺。通过在反应器的两个加热表面之间流动气体将基板保持悬浮。将两个加热的表面紧邻衬底移动特定的持续时间将衬底加热到所需的温度。然后通过将加热的表面与衬底隔开并将加热的表面保持在增加的距离来保持所需的温度，以使进一步的衬底加热最小化。

2. 发明申请

US20060141808A1 Method for the heat treatment of substrates 失效
标题翻译：基板热处理方法
公开(公告)号：US20060141808A1
公开(公告)日：2006-06-29
申请号：US11356697
申请日：2006-02-17
申请人： Ernst Granneman , Vladimir Kuznetsov , Xavier Pages , Pascal Vermont , Herbert Terhorst , Gert-Jan Snijders
发明人： Ernst Granneman , Vladimir Kuznetsov , Xavier Pages , Pascal Vermont , Herbert Terhorst , Gert-Jan Snijders
IPC分类号： H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： H01L21/324 , H01L21/42 , H01L21/477 , H01L21/67109 , H01L21/67248 , H01L21/67784 , H01L21/6838
摘要： A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.
摘要翻译：衬底在反应器中在不改变反应器温度的情况下在不同温度下进行半导体制造工艺。通过在反应器的两个加热表面之间流动气体将基板保持悬浮。将两个加热的表面紧邻衬底移动特定的持续时间将衬底加热到所需的温度。然后通过将加热的表面与衬底隔开并将加热的表面保持在增加的距离来保持所需的温度，以使进一步的衬底加热最小化。

3. 发明授权

US07153772B2 Methods of forming silicide films in semiconductor devices 有权
标题翻译：在半导体器件中形成硅化物膜的方法
公开(公告)号：US07153772B2
公开(公告)日：2006-12-26
申请号：US10866643
申请日：2004-06-10
申请人： Ernst H. A. Granneman , Vladimir Kuznetsov , Xavier Pages , Cornelius A. van der Jeugd
发明人： Ernst H. A. Granneman , Vladimir Kuznetsov , Xavier Pages , Cornelius A. van der Jeugd
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L29/665
摘要： A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.
摘要翻译：自对准硅化的方法包括在直接覆盖图案化和暴露的其它材料（例如硅）的区域中的覆盖材料（例如金属）完全反应之前中断硅化工艺。从而防止了过量的覆盖材料从其它区域扩散（例如，覆盖绝缘体）。通过在热壁反应器中使用导电快速热退火来保护控制和均匀性，其中大量加热板与基板表面紧密地间隔开。通过强制冷却特别容易地破坏中断，优选也通过与间隔紧密的块状板进行导电热交换。

4. 发明授权

US07691750B2 Methods of forming films in semiconductor devices with solid state reactants 有权
标题翻译：在具有固态反应物的半导体器件中形成膜的方法
公开(公告)号：US07691750B2
公开(公告)日：2010-04-06
申请号：US11595441
申请日：2006-11-09
申请人： Ernest H. A. Granneman , Vladimir Kuznetsov , Xavier Pages , Cornelius A. van der Jeugd
发明人： Ernest H. A. Granneman , Vladimir Kuznetsov , Xavier Pages , Cornelius A. van der Jeugd
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L29/665
摘要： A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.
摘要翻译：自对准硅化的方法包括在直接覆盖图案化和暴露的其它材料（例如硅）的区域中的覆盖材料（例如金属）完全反应之前中断硅化工艺。从而防止了过量的覆盖材料从其它区域扩散（例如，覆盖绝缘体）。通过在热壁反应器中使用导电快速热退火来保护控制和均匀性，其中大量加热板与基板表面紧密地间隔开。通过强制冷却特别容易地破坏中断，优选也通过与间隔紧密的块状板进行导电热交换。

5. 发明申请

US20050017310A1 Methods of forming silicide films in semiconductor devices 有权
标题翻译：在半导体器件中形成硅化物膜的方法
公开(公告)号：US20050017310A1
公开(公告)日：2005-01-27
申请号：US10866643
申请日：2004-06-10
申请人： Ernst Granneman , Vladimir Kuznetsov , Xavier Pages , Cornelius van der Jeugd
发明人： Ernst Granneman , Vladimir Kuznetsov , Xavier Pages , Cornelius van der Jeugd
IPC分类号： H01L21/28 , H01L21/24 , H01L21/285 , H01L21/336 , H01L21/8234 , H01L27/088 , H01L29/78 , H01L29/76
CPC分类号： H01L21/28518 , H01L29/665
摘要： A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.
摘要翻译：自对准硅化的方法包括在直接覆盖图案化和暴露的其它材料（例如硅）的区域中的覆盖材料（例如金属）完全反应之前中断硅化工艺。从而防止了过量的覆盖材料从其它区域扩散（例如，覆盖绝缘体）。通过在热壁反应器中使用导电快速热退火来保护控制和均匀性，其中大量加热板与基板表面紧密地间隔开。通过强制冷却特别容易地破坏中断，优选也通过与间隔紧密的块状板进行导电热交换。

6. 发明申请

US20070059932A1 Methods of forming films in semiconductor devices with solid state reactants 有权
标题翻译：在具有固态反应物的半导体器件中形成膜的方法
公开(公告)号：US20070059932A1
公开(公告)日：2007-03-15
申请号：US11595441
申请日：2006-11-09
申请人： Ernst Granneman , Vladimir Kuznetsov , Xavier Pages , Cornelius van der Jeugd
发明人： Ernst Granneman , Vladimir Kuznetsov , Xavier Pages , Cornelius van der Jeugd
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L29/665
摘要： A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.
摘要翻译：自对准硅化的方法包括在直接覆盖图案化和暴露的其它材料（例如硅）的区域中的覆盖材料（例如金属）完全反应之前中断硅化工艺。从而防止了过量的覆盖材料从其它区域扩散（例如，覆盖绝缘体）。通过在热壁反应器中使用导电快速热退火来保护控制和均匀性，其中大量加热板与基板表面紧密地间隔开。通过强制冷却特别容易地破坏中断，优选也通过与间隔紧密的块状板进行导电热交换。

7. 发明申请

US20050095873A1 Method for the heat treatment of substrates 失效
标题翻译：基板热处理方法
公开(公告)号：US20050095873A1
公开(公告)日：2005-05-05
申请号：US10700298
申请日：2003-10-31
申请人： Ernst Granneman , Vladimir Kuznetsov , Xavier Pages , Pascal Vermont
发明人： Ernst Granneman , Vladimir Kuznetsov , Xavier Pages , Pascal Vermont
IPC分类号： H01L21/00 , H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477 , H01L21/683
CPC分类号： H01L21/67109 , H01L21/324 , H01L21/6838
摘要： A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.
摘要翻译：衬底在反应器中在不改变反应器温度的情况下在不同温度下进行半导体制造工艺。通过在反应器的两个加热表面之间流动气体将基板保持悬浮。将两个加热的表面紧邻衬底移动特定的持续时间将衬底加热到所需的温度。然后通过将加热的表面与衬底隔开并将加热的表面保持在增加的距离来保持所需的温度，以使进一步的衬底加热最小化。

8. 发明授权

US6131858A Compact single-propellant unitary propulsion system for a small satellite 失效
标题翻译：用于小型卫星的紧凑型单推进单元推进系统
公开(公告)号：US6131858A
公开(公告)日：2000-10-17
申请号：US121783
申请日：1998-07-23
申请人： Nathalie Dethienne , Xavier Pages
发明人： Nathalie Dethienne , Xavier Pages
IPC分类号： B64G1/26 , B64G1/40 , F02K9/90 , F02K9/60
CPC分类号： B64G1/402 , B64G1/26 , B64G1/401
摘要： A compact single-propellant unitary propulsion system for placing a satellite into an orbit and subsequently correcting the orbit so that the satellite is stabilized on three axes comprises a liquid propellant tank secured to a satellite platform and having a reinforced bottom wall with an outlet and filter element, a distribution block welded to the reinforced bottom wall, at least one filling/emptying value mounted on the distribution block, and a set of at least two thrusters mounted on the distribution block and fed directly from the distribution block without additional pipework. The set of at least two thrusters point substantially along the axis of the tank, which is aligned with the axis of the satellite. The propulsion system may be fully assembled before it is integrated with the satellite.
摘要翻译：一种用于将卫星放入轨道并随后校正轨道使得卫星在三轴上稳定的紧凑型单推进剂单一推进系统包括固定到卫星平台的具有加强底壁的液体推进剂罐，其具有出口和过滤器焊接到加强底壁的分配块，安装在分配块上的至少一个填充/排空值，以及安装在分配块上的一组至少两个推进器，并直接从分配块进料而无需附加的管道。所述至少两个推进器的组基本上沿着与卫星的轴线对准的罐的轴线指向。推进系统在与卫星集成之前可以完全组装。

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