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    • 1. 发明申请
    • LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    • 液晶显示装置及其制造方法
    • US20120113378A1
    • 2012-05-10
    • US13347760
    • 2012-01-11
    • Erika TAKAHASHIGen FUJIIShuji FUKAITakeshi NISHI
    • Erika TAKAHASHIGen FUJIIShuji FUKAITakeshi NISHI
    • G02F1/1339B32B37/14B32B37/02
    • G02F1/13394G02F1/13392G02F2202/28
    • To control the positioning of a spacer more accurately in a liquid crystal display device to prevent display defects due to incorrect positioning in a display region. To provide a liquid crystal display device with higher image quality and reliability, and to provide a method for manufacturing the liquid crystal display device with high yield. In a liquid crystal display device, a region onto which a spherical spacer is discharged is subjected to liquid-repellent treatment in order to reduce the wettability with respect to a liquid in which the spherical spacer is dispersed. The liquid (the droplet) does not spread over the liquid-repellent region and is dried while moving the spherical spacer toward the center of the liquid. Thus, incorrect positioning shortly after discharging, which has been caused by the loss of control in the liquid, can be corrected by moving the spherical spacer while drying the liquid.
    • 为了在液晶显示装置中更准确地控制间隔物的定位,以防止由于在显示区域中的不正确定位而引起的显示缺陷。 提供具有更高图像质量和可靠性的液晶显示装置,并且提供一种以高产量制造液晶显示装置的方法。 在液晶显示装置中,为了降低相对于其中分散有球形间隔物的液体的润湿性,对排出球形间隔物的区域进行拒水处理。 液体(液滴)不会在液体排斥区域上扩散,并且在将球形间隔物朝向液体的中心移动的同时被干燥。 因此,可以通过在干燥液体的同时移动球形间隔物来校正由于液体中的失控而引起的放电后不正确的定位。
    • 2. 发明申请
    • MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    • 半导体器件和半导体器件的制造方法
    • US20100090211A1
    • 2010-04-15
    • US12639274
    • 2009-12-16
    • Gen FUJIIErika TAKAHASHI
    • Gen FUJIIErika TAKAHASHI
    • H01L51/10H01L33/00
    • H01L51/0022H01L51/0533H01L51/0545
    • A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.
    • 一种制造半导体器件的方法包括以下步骤:在透光衬底上形成栅电极,在栅电极和衬底上形成含有无机材料的栅极绝缘层,在栅极上形成含有可光聚合反应性基团的有机层 通过使用栅电极作为掩模从基板的背面用光照射有机层来选择性地聚合有机层,通过除去除了聚合的有机层的残留物形成有机聚合物层,形成 在除了形成有机聚合物层的区域以外的区域的栅极绝缘层上包含水解基团的有机硅烷膜,通过在有机聚合物层上涂布含有导电性材料的组合物形成源极和漏极,形成 栅电极上的半导体层,源极和漏极。
    • 3. 发明申请
    • DISPLAY DEVICE
    • 显示设备
    • US20080316410A1
    • 2008-12-25
    • US12133160
    • 2008-06-04
    • Gen FUJIIErika TAKAHASHI
    • Gen FUJIIErika TAKAHASHI
    • G02F1/1343
    • H01L51/0021C09K19/582G02F1/13439G02F2202/022G02F2202/16H01L51/0025H01L51/5206H01L51/5221
    • To provide display devices with improved image quality and reliability or display devices with a large screen at low cost with high productivity, an electrode layer containing a conductive polymer is used as an electrode layer for a display element, and the concentration of ionic impurities contained in the electrode layer containing a conductive polymer is reduced (preferably to 100 ppm or less). Ionic impurities are ionized, and easily become mobile ions, and they deteriorate a liquid crystal layer or an electroluminescent layer, which is used for a display element. Therefore, an electrode layer containing a conductive polymer, in which such ionic impurities are reduced is provided; thus, reliability of the display device can be improved.
    • 为了以高生产率以低成本提供具有改进的图像质量和可靠性的显示装置或具有大屏幕的显示装置,使用含有导电聚合物的电极层作为显示元件的电极层,并且包含在 含有导电性聚合物的电极层减少(优选为100ppm以下)。 离子杂质离子化,容易成为移动离子,并且使用于显示元件的液晶层或电致发光层劣化。 因此,提供含有这样的离子性杂质减少的导电性高分子的电极层。 从而能够提高显示装置的可靠性。
    • 5. 发明申请
    • DISPLAY DEVICE
    • 显示设备
    • US20090002615A1
    • 2009-01-01
    • US12137703
    • 2008-06-12
    • Gen FUJIIErika TAKAHASHI
    • Gen FUJIIErika TAKAHASHI
    • G02F1/1337
    • G02F1/133345
    • To manufacture display devices with improved image quality and reliability or display devices with a large screen at low cost with high productivity. An electrode layer containing a conductive polymer is used as an electrode layer of a display element in a display device and an inorganic insulating film serving as a passivation film is provided between the electrode layer and a display layer. Ionic impurities in the electrode layer are easily ionized and become mobile ions and thereby deteriorating a liquid crystal material or the like which is included in a display layer in a display element. Ionic impurities in the electrode layer are prevented from moving into a display layer by the inorganic insulating film. Thus, the reliability of the display device can be improved.
    • 制造具有改进的图像质量和可靠性的显示装置,或者以低成本,高生产率显示具有大屏幕的装置。 包含导电聚合物的电极层用作显示装置中的显示元件的电极层,并且在电极层和显示层之间设置用作钝化膜的无机绝缘膜。 电极层中的离子杂质容易电离并成为移动离子,从而使包含在显示元件中的显示层中的液晶材料等劣化。 通过无机绝缘膜防止电极层中的离子杂质移动到显示层。 因此,可以提高显示装置的可靠性。
    • 7. 发明申请
    • MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    • 半导体器件和半导体器件的制造方法
    • US20110031494A1
    • 2011-02-10
    • US12911041
    • 2010-10-25
    • Gen FUJIIErika TAKAHASHI
    • Gen FUJIIErika TAKAHASHI
    • H01L29/12H01L21/36
    • H01L51/0022H01L51/0533H01L51/0545
    • A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.
    • 一种制造半导体器件的方法包括以下步骤:在透光衬底上形成栅电极,在栅电极和衬底上形成含有无机材料的栅极绝缘层,在栅极上形成含有可光聚合反应性基团的有机层 通过使用栅电极作为掩模从基板的背面用光照射有机层来选择性地聚合有机层,通过除去除了聚合的有机层的残留物形成有机聚合物层,形成 在除了形成有机聚合物层的区域以外的区域的栅极绝缘层上包含水解基团的有机硅烷膜,通过在有机聚合物层上涂布含有导电性材料的组合物形成源极和漏极,形成 栅电极上的半导体层,源极和漏极。
    • 8. 发明申请
    • MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    • 半导体器件和半导体器件的制造方法
    • US20080099759A1
    • 2008-05-01
    • US11923349
    • 2007-10-24
    • Gen FUJIIErika TAKAHASHI
    • Gen FUJIIErika TAKAHASHI
    • H01L51/40H01L51/50
    • H01L51/0022H01L51/0533H01L51/0545
    • A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.
    • 一种制造半导体器件的方法包括以下步骤:在透光衬底上形成栅电极,在栅电极和衬底上形成含有无机材料的栅极绝缘层,在栅极上形成含有可光聚合反应性基团的有机层 通过使用栅电极作为掩模从基板的背面用光照射有机层来选择性地聚合有机层,通过除去除了聚合的有机层的残留物形成有机聚合物层,形成 在除了形成有机聚合物层的区域以外的区域的栅极绝缘层上包含水解基团的有机硅烷膜,通过在有机聚合物层上涂布含有导电性材料的组合物形成源极和漏极,形成 栅电极上的半导体层,源极和漏极。