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1. 发明申请

US20110287944A1 METHODS OF FORMING SUPERCONDUCTOR CIRCUITS 有权
标题翻译：形成超导体电路的方法
公开(公告)号：US20110287944A1
公开(公告)日：2011-11-24
申请号：US12783116
申请日：2010-05-19
申请人： Erica Folk , Patrick B. Shea , Andrew C. Loyd
发明人： Erica Folk , Patrick B. Shea , Andrew C. Loyd
IPC分类号： H01L39/24 , H01L39/22
CPC分类号： H01L39/2493 , H01L27/18
摘要： Methods of forming superconducting devices are disclosed. In one embodiment, the method can comprise depositing a protective barrier layer over a superconducting material layer, curing the protective barrier layer, depositing a photoresist material layer over the protective barrier layer and irradiating and developing the photoresist material layer to form an opening pattern in the photoresist material layer. The method can further comprise etching the protective barrier layer to form openings in the protective barrier layer based on the opening pattern, etching the superconductor material layer based on the openings in the protective barrier layer to form openings in the superconductor material layer that define a first set of superconductor material raised portins and stripping the photoresist material layer and the protective barrier layer.
摘要翻译：公开了形成超导装置的方法。在一个实施例中，该方法可以包括在超导材料层上沉积保护性阻挡层，固化保护性阻挡层，在保护性阻挡层上沉积光致抗蚀剂材料层并照射和显影光致抗蚀剂材料层以在光致抗蚀剂材料层。该方法还可以包括蚀刻保护性阻挡层，以基于开口图案在保护阻挡层中形成开口，基于保护性阻挡层中的开口蚀刻超导体材料层，以在超导体材料层中形成限定第一一组超导体材料凸起的孔并剥离光致抗蚀剂材料层和保护性阻挡层。

2. 发明授权

US08735326B2 Methods of forming superconductor circuits 有权
标题翻译：形成超导电路的方法
公开(公告)号：US08735326B2
公开(公告)日：2014-05-27
申请号：US12783116
申请日：2010-05-19
申请人： Erica Folk , Patrick B. Shea , Andrew C. Loyd
发明人： Erica Folk , Patrick B. Shea , Andrew C. Loyd
IPC分类号： H01L39/24
CPC分类号： H01L39/2493 , H01L27/18
摘要： Methods of forming superconducting devices are disclosed. In one embodiment, the method can comprise depositing a protective barrier layer over a superconducting material layer, curing the protective barrier layer, depositing a photoresist material layer over the protective barrier layer and irradiating and developing the photoresist material layer to form an opening pattern in the photoresist material layer. The method can further comprise etching the protective barrier layer to form openings in the protective barrier layer based on the opening pattern, etching the superconductor material layer based on the openings in the protective barrier layer to form openings in the superconductor material layer that define a first set of superconductor material raised portins and stripping the photoresist material layer and the protective barrier layer.
摘要翻译：公开了形成超导装置的方法。在一个实施例中，该方法可以包括在超导材料层上沉积保护性阻挡层，固化保护性阻挡层，在保护性阻挡层上沉积光致抗蚀剂材料层并照射和显影光致抗蚀剂材料层以在光致抗蚀剂材料层。该方法还可以包括蚀刻保护性阻挡层，以基于开口图案在保护阻挡层中形成开口，基于保护性阻挡层中的开口蚀刻超导体材料层，以在超导体材料层中形成限定第一一组超导体材料凸起的孔并剥离光致抗蚀剂材料层和保护性阻挡层。

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