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1. 发明授权

US08262894B2 High speed copper plating bath 有权
标题翻译：高速镀铜浴
公开(公告)号：US08262894B2
公开(公告)日：2012-09-11
申请号：US12433657
申请日：2009-04-30
申请人： Xingling Xu , Eric Webb
发明人： Xingling Xu , Eric Webb
IPC分类号： C25D3/38 , C25D21/18 , C25D5/02
CPC分类号： C25D3/38 , C25D17/00 , C25D17/001 , C25D21/14 , H01L21/2885 , H05K3/423
摘要： A copper electroplating bath that includes an aqueous solution that comprises a copper salt and at least one acid and a container that comprises a copper salt in solid form, is disclosed. The container supplies copper ions to the aqueous solution to maintain the copper ion concentration of the aqueous solution at saturation levels while retaining the copper salt in solid form within the container.
摘要翻译：公开了一种铜电镀浴，其包括含有铜盐和至少一种酸的水溶液和包含固体形式的铜盐的容器。容器向水溶液中提供铜离子以将水溶液的铜离子浓度保持在饱和水平，同时将铜盐固体形式保持在容器内。

2. 发明申请

US20100276292A1 HIGH SPEED COPPER PLATING BATH 有权
标题翻译：高速铜镀层
公开(公告)号：US20100276292A1
公开(公告)日：2010-11-04
申请号：US12433657
申请日：2009-04-30
申请人： Eric Webb , Xingling Xu
发明人： Eric Webb , Xingling Xu
IPC分类号： C25D3/66
CPC分类号： C25D3/38 , C25D17/00 , C25D17/001 , C25D21/14 , H01L21/2885 , H05K3/423
摘要： A copper electroplating bath that includes an aqueous solution that comprises a copper salt and at least one acid and a container that comprises a copper salt in solid form, is disclosed. The container supplies copper ions to the aqueous solution to maintain the copper ion concentration of the aqueous solution at saturation levels while retaining the copper salt in solid form within the container.
摘要翻译：公开了一种铜电镀浴，其包括含有铜盐和至少一种酸的水溶液和包含固体形式的铜盐的容器。容器向水溶液中提供铜离子以将水溶液的铜离子浓度保持在饱和水平，同时将铜盐固体形式保持在容器内。

3. 发明授权

US08481432B2 Fabrication of semiconductor interconnect structure 有权
公开(公告)号：US08481432B2
公开(公告)日：2013-07-09
申请号：US13116963
申请日：2011-05-26
申请人： Steven T. Mayer , Daniel A. Koos , Eric Webb
发明人： Steven T. Mayer , Daniel A. Koos , Eric Webb
IPC分类号： H01L21/302
CPC分类号： C23F1/02 , C23C18/1608 , C23C18/1834 , C23F1/18 , C23F1/34 , H01L21/288 , H01L21/32134 , H01L21/76849 , H01L21/76856 , H01L21/76858 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.

4. 发明授权

US08197662B1 Deposit morphology of electroplated copper 有权
标题翻译：电镀铜的沉积形态
公开(公告)号：US08197662B1
公开(公告)日：2012-06-12
申请号：US12971367
申请日：2010-12-17
申请人： Eric Webb , Jonathan D. Reid , Yuichi Takada , Timothy Archer
发明人： Eric Webb , Jonathan D. Reid , Yuichi Takada , Timothy Archer
IPC分类号： C25D5/34
CPC分类号： C25D7/123 , C25D5/34 , H01L21/2885 , H01L21/76877
摘要： The present invention provides improved methods and devices for electroplating copper on a wafer. Some implementations of the present invention involve the pre-treatment of the wafer with a solution containing accelerator molecules. Preferably, the bath into which the wafer is subsequently placed for electroplating has a reduced concentration of accelerator molecules. The pre-treatment causes a reduction in roughness of the electroplated copper surface, particularly during the initial phases of copper growth.
摘要翻译：本发明提供了用于在晶片上电镀铜的改进方法和装置。本发明的一些实施方案涉及用含有促进剂分子的溶液预处理晶片。优选地，晶片随后放置用于电镀的浴具有降低的促进剂分子浓度。预处理导致电镀铜表面的粗糙度降低，特别是在铜生长的初始阶段。

5. 发明申请

US20120212321A1 SYSTEM AND METHOD FOR MANAGING ACCESS TO AND TRACKING A PLURALITY OF CARTS 审中-公开
标题翻译：用于管理访问和追踪多媒体的系统和方法
公开(公告)号：US20120212321A1
公开(公告)日：2012-08-23
申请号：US13029914
申请日：2011-02-17
申请人： Kurt Keener , Eric Webb , Todd Macy
发明人： Kurt Keener , Eric Webb , Todd Macy
IPC分类号： G08B29/00
CPC分类号： G06Q10/06 , G06Q50/22
摘要： A system and method for managing access to a plurality of carts. A plurality of users may be created in a database, each user having unique identifying information. Users may be grouped into user groups when having similar attributes. Each cart may have an entry in the database with associated attributes. Carts may be grouped into cart groups for carts having similar attributes. Users may be given access to cart either individually, through a user group that has access to the cart, by given access to an entire group of carts, or through a user group that has access to an entire group of carts. The various associations can be interwoven to provide groups and sub-groups for managing applications where multiple users must interact with multiple carts. The carts can store access logs which may be communicated in real time to a computing device or may be stored locally at the cart for later access by an administrator.
摘要翻译：一种用于管理对多个车辆的访问的系统和方法。可以在数据库中创建多个用户，每个用户具有唯一的识别信息。具有相似属性时，用户可能会被分组到用户组中。每个购物车可能在数据库中具有关联属性的条目。购物车可以被分组成具有相似属性的推车的购物车组。用户可以单独访问购物车，通过可以访问购物车的用户组，通过给予整个购物车的访问，或通过可以访问整个购物车的用户组。各种关联可以交织在一起，以提供用于管理多个用户必须与多个车辆交互的应用程序的组和子组。购物车可以存储可以实时传达到计算设备的访问日志，或者可以在本地存储在购物车中以供管理员稍后访问。

6. 发明申请

US20110062100A1 ANTI-TIP BRACKET FOR USE WITH MOBILE SHELVING 审中-公开
标题翻译：防盗支架用于移动手提
公开(公告)号：US20110062100A1
公开(公告)日：2011-03-17
申请号：US12562013
申请日：2009-09-17
申请人： Eric Webb , Max Pau , Gregory Jimmerson , Ricky Kai-Chi Lam
发明人： Eric Webb , Max Pau , Gregory Jimmerson , Ricky Kai-Chi Lam
IPC分类号： A47F5/00 , A47B96/06
CPC分类号： A47B97/00 , A47B53/00 , A47B53/02 , A47B2097/008
摘要： An anti-tip assembly for use with a shelving system movable along a track. The track includes a first flange overhanging a first longitudinally extending channel and a second flange overhanging a second longitudinally extending channel. The anti-tip assembly includes an open ended channel, and a first bracket having a first flange extending into a first open end of the open ended channel, and a second flange extending into the first channel of the track. The anti-tip assembly further includes a second bracket having a first flange extending into a second open end of the open ended channel, and a second flange extending into the second channel of the track. The first and second brackets are slidable inside the open ended channel and coupled together with a maximum spacing therebetween. A biasing member biases the first and second brackets outwardly away from one another within the maximum spacing.
摘要翻译：用于沿着轨道移动的搁架系统的反尖端组件。轨道包括突出于第一纵向延伸通道的第一凸缘和悬挂第二纵向延伸通道的第二凸缘。反尖端组件包括开放式开口通道，以及第一支架，其具有延伸到开放式开口通道的第一开口端的第一凸缘和延伸到轨道的第一通道中的第二凸缘。反尖端组件还包括具有延伸到开放端开口的第二开口端的第一凸缘的第二支架和延伸到轨道的第二通道中的第二凸缘。第一和第二支架可在开放式开口通道内滑动并以其间的最大间隔联接在一起。偏置构件将第一和第二支架在最大间距内彼此偏离。

7. 发明申请

US20090283499A1 Fabrication of semiconductor interconnect structure 有权
公开(公告)号：US20090283499A1
公开(公告)日：2009-11-19
申请号：US11888312
申请日：2007-07-30
申请人： Steven T. Mayer , Daniel A. Koos , Eric Webb
发明人： Steven T. Mayer , Daniel A. Koos , Eric Webb
IPC分类号： C23F1/00
CPC分类号： C23F1/02 , C23C18/1608 , C23C18/1834 , C23F1/18 , C23F1/34 , H01L21/288 , H01L21/32134 , H01L21/76849 , H01L21/76856 , H01L21/76858 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.

8. 发明申请

US20150212312A1 Intelligent Light Source 审中-公开
标题翻译：智能光源
公开(公告)号：US20150212312A1
公开(公告)日：2015-07-30
申请号：US14168846
申请日：2014-01-30
申请人： Vernon Hopkins , Eric Webb
发明人： Vernon Hopkins , Eric Webb
IPC分类号： G02B23/24 , G01J5/10 , G01J1/42
CPC分类号： G02B23/2461 , A61B1/0661 , A61B1/0669 , G01J2001/4247 , G01J2005/608 , G02B23/2453
摘要： An intelligent endoscopic light source system for controlling the intensity of a light source, including a light source emitting light at a first intensity, an attenuator positioned to receive light from the light source at a first intensity and movable to pass light from the light source at a second intensity, a sensor mounted to the attenuator for measuring the first intensity, and a controller for receiving the intensity measurement from the sensor and moving the attenuator to pass light at a desired second intensity.
摘要翻译：一种智能内窥光光源系统，用于控制光源的强度，包括发射第一强度的光的光源，衰减器，定位成以第一强度接收来自光源的光，并可移动以将来自光源的光第二强度，安装到用于测量第一强度的衰减器的传感器;以及控制器，用于从传感器接收强度测量值，并使衰减器以期望的第二强度传递光。

9. 发明授权

US07879218B1 Deposit morphology of electroplated copper 有权
标题翻译：电镀铜的沉积形态
公开(公告)号：US07879218B1
公开(公告)日：2011-02-01
申请号：US10741048
申请日：2003-12-18
申请人： Eric Webb , Jon Reid , Yuichi Takada , Timothy Archer
发明人： Eric Webb , Jon Reid , Yuichi Takada , Timothy Archer
IPC分类号： C25D5/34
CPC分类号： C25D7/123 , C25D5/34 , H01L21/2885 , H01L21/76877
摘要： The present invention provides improved methods and devices for electroplating copper on a wafer. Some implementations of the present invention involve the pre-treatment of the wafer with a solution containing accelerator molecules. Preferably, the bath into which the wafer is subsequently placed for electroplating has a reduced concentration of accelerator molecules. The pre-treatment causes a reduction in roughness of the electroplated copper surface, particularly during the initial phases of copper growth.
摘要翻译：本发明提供了用于在晶片上电镀铜的改进方法和装置。本发明的一些实施方案涉及用含有促进剂分子的溶液预处理晶片。优选地，晶片随后放置用于电镀的浴具有降低的促进剂分子浓度。预处理导致电镀铜表面的粗糙度降低，特别是在铜生长的初始阶段。

10. 发明申请

US20050098440A1 Methods for the electrochemical deposition of copper onto a barrier layer of a work piece 有权
标题翻译：将铜电化学沉积到工件阻挡层上的方法
公开(公告)号：US20050098440A1
公开(公告)日：2005-05-12
申请号：US10705579
申请日：2003-11-10
申请人： Sridhar Kailasam , John Drewery , Jonathan Reid , Eric Webb , Johanes Sukamto
发明人： Sridhar Kailasam , John Drewery , Jonathan Reid , Eric Webb , Johanes Sukamto
IPC分类号： C25D3/38 , C25D5/02 , C25D7/12 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76843 , C25D7/12 , H01L21/2885 , H01L21/76856 , H01L21/76873 , H01L21/76877
摘要： Methods are provided for electrochemically depositing copper on a work piece. One method includes the step of depositing overlying the work piece a barrier layer having a surface and subjecting the barrier layer surface to a surface treatment adapted to facilitate deposition of copper on the barrier layer. Copper then is electrochemically deposited overlying the barrier layer.
摘要翻译：提供了用于在工件上电化学沉积铜的方法。一种方法包括沉积覆盖工件的具有表面的阻挡层并使阻挡层表面经受适于促进铜在阻挡层上沉积的表面处理的步骤。然后将铜电化学沉积在覆盖阻挡层上。

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