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1. 发明授权

US06472695B1 Increased lateral oxidation rate of aluminum indium arsenide 失效
标题翻译：增加砷化铟铝的侧向氧化率
公开(公告)号：US06472695B1
公开(公告)日：2002-10-29
申请号：US09594838
申请日：2000-06-15
申请人： Eric M. Hall , Larry A. Coldren
发明人： Eric M. Hall , Larry A. Coldren
IPC分类号： H01L310304
CPC分类号： H01L21/02178 , H01L21/022 , H01L21/02241 , H01L21/02255 , H01L21/31666 , H01S5/18311 , H01S5/18372 , H01S5/3201 , H01S5/3235
摘要： The present invention discloses a device and a method for producing an oxidizable digital alloy that is sufficiently strain-compensated to provide for substantially defect-free growth on indium phosphide. The device comprises a layer of semiconductor material, a first layer, and a second layer. The first layer is indium arsenide and is coupled to the layer of semiconductor material, wherein the first layer of indium arsenide is under a compressive strain by a lattice mismatch between the layer of semiconductor material and the first layer of indium arsenide. The second layer is aluminum arsenide and is coupled to the layer of indium arsenide, wherein the second layer of aluminum arsenide is under a tensile strain by a lattice mismatch between the second layer and the first layer. The first layer and the second layer comprise a digital alloy of aluminum indium arsenide, and create a quasi-strain-compensated substantially defect-free alloy on the layer of semiconductor material therein. A superlattice period of the first layer of indium arsenide and a second layer of aluminum arsenide is selected to allow an oxide of desired depth to be produced from the digital alloy.
摘要翻译：本发明公开了一种用于制造可氧化数字合金的装置和方法，其被充分应变补偿以在磷化铟上提供基本上无缺陷的生长。该器件包括半导体材料层，第一层和第二层。第一层是砷化铟并且耦合到半导体材料层，其中第一层砷化铟由于半导体材料层和第一层砷化铟之间的晶格失配而处于压缩应变之下。第二层是砷化铝，并且与砷化铟层耦合，其中第二层砷化铝在第二层与第一层之间的晶格失配下处于拉伸应变之下。第一层和第二层包括砷化铝铟的数字合金，并在其中的半导体材料层上产生准应变补偿的基本上无缺陷的合金。选择第一层砷化铟的超晶格周期和第二层砷化铝，以允许从数字合金产生所需深度的氧化物。

2. 发明授权

US06653158B2 Double intracavity contacted long-wavelength VCSELs and method of fabricating same 失效
公开(公告)号：US06653158B2
公开(公告)日：2003-11-25
申请号：US09935009
申请日：2001-08-21
申请人： Eric M. Hall , Shigeru M. Nakagawa , Larry A. Coldren
发明人： Eric M. Hall , Shigeru M. Nakagawa , Larry A. Coldren
IPC分类号： H01L2100
CPC分类号： B82Y20/00 , H01S5/02461 , H01S5/0421 , H01S5/18305 , H01S5/18316 , H01S5/18341 , H01S5/18344 , H01S5/2086 , H01S5/305 , H01S5/3095 , H01S5/32341 , H01S5/3235 , H01S5/34306
摘要： A vertical cavity surface emitting laser (VCSEL) includes a semiconductor device having a pair of mirror portions, an active region, a tunnel junction, a pair of cladding layers and a substrate. Heat generated by the VCSEL dissipates through the cladding layers, which utilize an indium phosphide material. The VCSEL also includes selective etches that are used to aperture the active region to allow electric current to be injected into the active region.

3. 发明授权

US06841407B2 Method for aperturing vertical-cavity surface-emitting lasers (VCSELs) 失效
标题翻译：用于开孔垂直腔表面发射激光器（VCSEL）的方法
公开(公告)号：US06841407B2
公开(公告)日：2005-01-11
申请号：US09935352
申请日：2001-08-21
申请人： Larry A. Coldren , Eric M. Hall , Shigeru Nakagawa , Guilhem Almuneau
发明人： Larry A. Coldren , Eric M. Hall , Shigeru Nakagawa , Guilhem Almuneau
IPC分类号： H01S5/024 , H01S5/042 , H01S5/183 , H01S5/30 , H01S5/323 , H01S5/343 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/02461 , H01S5/0421 , H01S5/18305 , H01S5/18316 , H01S5/18341 , H01S5/18344 , H01S5/2086 , H01S5/305 , H01S5/3095 , H01S5/32341 , H01S5/3235 , H01S5/34306
摘要： A method for aperturing a vertical-cavity surface-emitting laser (VCSEL), for increasing the external quantum efficiency and decreasing the threshold current, involves an etching mixture that is applied to the active region of the VCSEL. The etching mixture is designed in a manner to selectively etch the active region of the VCSEL at a rate substantially faster than the etch rate of at least one of the multiple DBRS associated with the VCSEL.
摘要翻译：用于增加垂直腔表面发射激光器（VCSEL）的方法，用于增加外部量子效率和降低阈值电流，涉及施加到VCSEL的有源区的蚀刻混合物。蚀刻混合物的设计方法是选择性地以比VCSEL相关联的多个DBRS中的至少一个蚀刻速率快的速率选择性地刻蚀VCSEL的有源区。

4. 发明授权

US06810064B1 Heat spreading layers for vertical cavity surface emitting lasers 失效
标题翻译：用于垂直腔表面发射激光器的散热层
公开(公告)号：US06810064B1
公开(公告)日：2004-10-26
申请号：US09934791
申请日：2001-08-21
申请人： Larry A. Coldren , Eric M. Hall , Shigeru Nakagawa
发明人： Larry A. Coldren , Eric M. Hall , Shigeru Nakagawa
IPC分类号： H01S308
CPC分类号： B82Y20/00 , H01S5/02461 , H01S5/18316 , H01S5/18341 , H01S5/3095 , H01S5/34306
摘要： A system and a method for reducing the temperature in a vertical-cavity surface-emitting laser (VCSEL) comprising of including at least one heat spreading layer adjecent to one of the reflecting surfaces in a VCSEL. The heat spreading layer has high thermal conductivity allowing heat to bypass said one of the reflecting surfaces, thereby efficiently removing the heat away from the device. This also reduces the serial resistance and the thermal impedance of the VCSEL.
摘要翻译：一种用于降低垂直腔表面发射激光器（VCSEL）中的温度的系统和方法，包括在VCSEL中包括与所述反射表面中的一个相邻的至少一个热扩散层。散热层具有高热导率，允许热量绕过所述一个反射表面，从而有效地将热量从器件上除去。这也降低了VCSEL的串联电阻和热阻抗。

5. 发明授权

US06798817B2 Distributed bragg reflectors incorporating SB material for long-wavelength vertical cavity surface emitting lasers 失效
标题翻译：分布式布拉格反射器，包含用于长波长垂直腔表面发射激光器的SB材料
公开(公告)号：US06798817B2
公开(公告)日：2004-09-28
申请号：US09935012
申请日：2001-08-21
申请人： Larry A. Coldren , Eric M. Hall , Guilhem Almuneau
发明人： Larry A. Coldren , Eric M. Hall , Guilhem Almuneau
IPC分类号： H01S308
CPC分类号： B82Y20/00 , H01S5/02461 , H01S5/0421 , H01S5/18305 , H01S5/18316 , H01S5/18341 , H01S5/18344 , H01S5/2086 , H01S5/305 , H01S5/3095 , H01S5/32341 , H01S5/3235 , H01S5/34306
摘要： A distributed Bragg reflector (DBR) for a vertical cavity surface emitting laser (VCSEL) has a semiconductor material system including the elements aluminum, gallium, arsenic, and antimony. Use of antimony in the DBR structure allows current to be pumped through the DBRs into an active region to provide for long wavelength, continuous wave operation of the VCSEL.
摘要翻译：用于垂直腔表面发射激光器（VCSEL）的分布式布拉格反射器（DBR）具有包括铝，镓，砷和锑元素的半导体材料系统。在DBR结构中使用锑允许电流通过DBR泵送到有源区域，以提供VCSEL的长波长连续波动操作。

6. 发明授权

US06687281B2 Double intracavity contacted long-wavelength VCSELs 失效
标题翻译：双腔内接触长波长VCSEL
公开(公告)号：US06687281B2
公开(公告)日：2004-02-03
申请号：US09935122
申请日：2001-08-21
申请人： Larry A. Coldren , Eric M. Hall , Shigeru Nakagawa
发明人： Larry A. Coldren , Eric M. Hall , Shigeru Nakagawa
IPC分类号： H01S308
CPC分类号： B82Y20/00 , H01S5/02461 , H01S5/0421 , H01S5/18305 , H01S5/18316 , H01S5/18341 , H01S5/18344 , H01S5/2086 , H01S5/305 , H01S5/3095 , H01S5/32341 , H01S5/3235 , H01S5/34306
摘要： A vertical cavity surface emitting laser (VCSEL) includes a semiconductor device having a pair of mirror portions, an active region, a tunnel junction, a pair of cladding layers and a substrate. Heat generated by the VCSEL dissipates through the cladding layers, which utilize an indium phosphide material. The VCSEL also includes selective etches that are used to aperture the active region to allow electric current to be injected into the active region.
摘要翻译：垂直腔表面发射激光器（VCSEL）包括具有一对镜面部分，有源区，隧道结，一对包覆层和衬底的半导体器件。由VCSEL产生的热量通过使用磷化铟材料的包覆层消散。 VCSEL还包括选择性蚀刻，其用于对有源区开孔以允许电流注入有源区。

7. 发明授权

US06714573B2 Contact scheme for intracavity-contacted vertical-cavity surface-emitting laser 失效
标题翻译：腔内接触垂直腔表面发射激光器的接触方案
公开(公告)号：US06714573B2
公开(公告)日：2004-03-30
申请号：US09934781
申请日：2001-08-21
申请人： Larry A. Coldren , Eric M. Hall , Shigeru Nakagawa
发明人： Larry A. Coldren , Eric M. Hall , Shigeru Nakagawa
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/02461 , H01S5/0421 , H01S5/18305 , H01S5/18316 , H01S5/18341 , H01S5/18344 , H01S5/2086 , H01S5/305 , H01S5/3095 , H01S5/32341 , H01S5/3235 , H01S5/34306
摘要： A vertical cavity surface emitting laser (VCSEL) includes a semiconductor device having a pair of mirror portions, an active region, a tunnel junction, a pair of cladding layers and a substrate. Heat generated by the VCSEL dissipates through the cladding layers, which utilize an indium phosphide material. The VCSEL also includes selective etches that are used to aperture the active region to allow electric current to be injected into the active region.
摘要翻译：垂直腔表面发射激光器（VCSEL）包括具有一对镜面部分，有源区，隧道结，一对包覆层和衬底的半导体器件。由VCSEL产生的热量通过使用磷化铟材料的包覆层消散。 VCSEL还包括选择性蚀刻，其用于对有源区开孔以允许电流注入有源区。

8. 发明授权

US08769937B2 Soot sensor monitoring 有权
标题翻译：煤烟传感器监控
公开(公告)号：US08769937B2
公开(公告)日：2014-07-08
申请号：US13362736
申请日：2012-01-31
申请人： Ognyan N. Yanakiev , David E. Winn , Eric M. Hall , Christopher P. Musienko
发明人： Ognyan N. Yanakiev , David E. Winn , Eric M. Hall , Christopher P. Musienko
IPC分类号： F01N3/00 , F01N3/02 , G01N7/00 , G01N33/497
CPC分类号： F01N11/00 , F01N2560/05 , Y02T10/47
摘要： A control method for monitoring a soot sensor of an exhaust treatment system is provided. The control method includes: determining when regeneration has completed; comparing soot sensor data to an estimated soot data based on the determining; and generating a message based on the comparing.
摘要翻译：提供了一种用于监测废气处理系统的烟尘传感器的控制方法。控制方法包括：确定再生完成时间; 基于该确定将煤烟传感器数据与估计的烟灰数据进行比较; 并基于比较生成消息。

9. 发明申请

US20130192214A1 SOOT SENSOR MONITORING 有权
标题翻译：传感器监控
公开(公告)号：US20130192214A1
公开(公告)日：2013-08-01
申请号：US13362736
申请日：2012-01-31
申请人： Ognyan N. Yanakiev , David E. Winn , Eric M. Hall , Christopher P. Musienko
发明人： Ognyan N. Yanakiev , David E. Winn , Eric M. Hall , Christopher P. Musienko
IPC分类号： F01N3/023 , G01M15/10
CPC分类号： F01N11/00 , F01N2560/05 , Y02T10/47
摘要： A control method for monitoring a soot sensor of an exhaust treatment system is provided. The control method includes: determining when regeneration has completed; comparing soot sensor data to an estimated soot data based on the determining; and generating a message based on the comparing.
摘要翻译：提供了一种用于监测废气处理系统的烟尘传感器的控制方法。控制方法包括：确定再生完成时间; 基于该确定将煤烟传感器数据与估计的烟灰数据进行比较; 并基于比较生成消息。

10. 发明申请

US20120288974A1 Polarization Direction of Optical Devices Using Selected Spatial Configurations 有权
标题翻译：使用选定的空间配置的光学器件的极化方向
公开(公告)号：US20120288974A1
公开(公告)日：2012-11-15
申请号：US13553691
申请日：2012-07-19
申请人： Rajat Sharma , Eric M. Hall
发明人： Rajat Sharma , Eric M. Hall
IPC分类号： H01L33/30 , H01L33/08
CPC分类号： H01L33/20 , H01L33/16 , H01L33/18 , H01L33/32
摘要： A GaN based light emitting diode device which emits polarized light or light of various degrees of polarization for use in the creation of optical devices. The die are cut to different shapes, or contain some indicia that are used to represent the configuration of the weak dipole plane and the strong dipole plane. This allows for the more efficient manufacturing of such light emitting diode based optical devices.
摘要翻译：用于产生光学器件的GaN发光二极管器件，其发射具有各种偏振度的偏振光或光。将模具切割成不同的形状，或者包含用于表示弱偶极平面和强偶极子平面的配置的一些标记。这允许更有效地制造这种基于发光二极管的光学器件。

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