会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Increased lateral oxidation rate of aluminum indium arsenide
    • 增加砷化铟铝的侧向氧化率
    • US06472695B1
    • 2002-10-29
    • US09594838
    • 2000-06-15
    • Eric M. HallLarry A. Coldren
    • Eric M. HallLarry A. Coldren
    • H01L310304
    • H01L21/02178H01L21/022H01L21/02241H01L21/02255H01L21/31666H01S5/18311H01S5/18372H01S5/3201H01S5/3235
    • The present invention discloses a device and a method for producing an oxidizable digital alloy that is sufficiently strain-compensated to provide for substantially defect-free growth on indium phosphide. The device comprises a layer of semiconductor material, a first layer, and a second layer. The first layer is indium arsenide and is coupled to the layer of semiconductor material, wherein the first layer of indium arsenide is under a compressive strain by a lattice mismatch between the layer of semiconductor material and the first layer of indium arsenide. The second layer is aluminum arsenide and is coupled to the layer of indium arsenide, wherein the second layer of aluminum arsenide is under a tensile strain by a lattice mismatch between the second layer and the first layer. The first layer and the second layer comprise a digital alloy of aluminum indium arsenide, and create a quasi-strain-compensated substantially defect-free alloy on the layer of semiconductor material therein. A superlattice period of the first layer of indium arsenide and a second layer of aluminum arsenide is selected to allow an oxide of desired depth to be produced from the digital alloy.
    • 本发明公开了一种用于制造可氧化数字合金的装置和方法,其被充分应变补偿以在磷化铟上提供基本上无缺陷的生长。 该器件包括半导体材料层,第一层和第二层。 第一层是砷化铟并且耦合到半导体材料层,其中第一层砷化铟由于半导体材料层和第一层砷化铟之间的晶格失配而处于压缩应变之下。 第二层是砷化铝,并且与砷化铟层耦合,其中第二层砷化铝在第二层与第一层之间的晶格失配下处于拉伸应变之下。 第一层和第二层包括砷化铝铟的数字合金,并在其中的半导体材料层上产生准应变补偿的基本上无缺陷的合金。 选择第一层砷化铟的超晶格周期和第二层砷化铝,以允许从数字合金产生所需深度的氧化物。