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1. 发明申请

US20180047779A1 LIGHT-EMITTING DIODE 审中-公开
公开(公告)号：US20180047779A1
公开(公告)日：2018-02-15
申请号：US15794842
申请日：2017-10-26
申请人： Epistar Corporation
发明人： Tsung-Hsien YANG , Han-Min WU , Jhih-Sian WANG , Yi-Ming CHEN , Tzu-Ghieh HSU
IPC分类号： H01L27/15 , H01L33/08 , H01L29/06 , H01L33/38 , H01L33/22 , H01L33/00
CPC分类号： H01L27/15 , H01L27/156 , H01L29/0649 , H01L33/0079 , H01L33/08 , H01L33/22 , H01L33/385 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： A light-emitting diode comprises: a first light-emitting structure, comprising: a first area comprising a side wall; a second area; and a first isolation path having an electrode isolation layer between the first area and the second area, wherein the side wall of the first area is in the first isolation path; an electrode contact layer covering the side wall of the first area, wherein the electrode contact layer is separated from electrode isolation layer; an electrical connecting structure covering the second area; and an electrical contact layer under the electrical connecting structure, wherein the electrical contact layer directly contacts the electrical connecting structure; wherein each of the first area and the second area sequentially comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer.

2. 发明申请

US20180331151A1 LIGHT-EMITTING DIODE 审中-公开
公开(公告)号：US20180331151A1
公开(公告)日：2018-11-15
申请号：US16042769
申请日：2018-07-23
申请人： Epistar Corporation
发明人： Tsung-Hsien YANG , Han-Min WU , Jhih-Sian WANG , Yi-Ming CHEN , Tzu-Ghieh HSU
IPC分类号： H01L27/15 , H01L29/06 , H01L33/08
CPC分类号： H01L27/15 , H01L27/156 , H01L29/0649 , H01L33/0079 , H01L33/08 , H01L33/22 , H01L33/385 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： A semiconductor device, comprises a semiconductor stack comprising a first area and a second area, wherein the second area comprises a first side wall, a first isolation path formed between the first area and the second area, a second isolation path formed in the semiconductor stack, an isolation layer formed in the first isolation path and covering the first side wall, an electrical contact layer formed under the semiconductor stack, and an electrode contact layer directly contacting the electrical contact layer.

3. 发明申请

US20150137169A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20150137169A1
公开(公告)日：2015-05-21
申请号：US14546571
申请日：2014-11-18
申请人： EPISTAR CORPORATION
发明人： Yi-Ming CHEN , Tsung-Hsien YANG
IPC分类号： H01L33/38 , H01L33/42
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/40 , H01L33/42 , H01L33/486 , H01L33/62 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.
摘要翻译：半导体发光器件包括具有第一表面的半导体堆叠，其中第一表面包括多个突起部分和多个凹部; 所述第一电极在所述第一表面上并与所述半导体叠层电连接; 在所述第一表面上的第二电极并与所述半导体堆叠电连接; 以及保形地覆盖所述第一表面和所述第一电极和所述半导体堆叠之间的透明导电层，其中所述第一电极包括第一接合部分和第一延伸部分，并且所述第一延伸部分在所述第一接合部分和所述透明导电层之间并保形地覆盖透明导电层。

4. 发明申请

US20210217930A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
公开(公告)号：US20210217930A1
公开(公告)日：2021-07-15
申请号：US17218906
申请日：2021-03-31
申请人： EPISTAR CORPORATION
发明人： Yi-Ming CHEN , Tsung-Hsien YANG
IPC分类号： H01L33/38 , H01L33/20 , H01L33/62
摘要： A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.

5. 发明申请

US20150144984A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20150144984A1
公开(公告)日：2015-05-28
申请号：US14554488
申请日：2014-11-26
申请人： Epistar Corporation
发明人： Yi-Ming CHEN , Chun-Yu LIN , Tsung-Hsien YANG , Tzu-Chieh HSU , Kun-De LIN , Yao-Ning CHAN , Chih-Chiang LU
IPC分类号： H01L33/38 , H01L33/22
CPC分类号： H01L33/382 , H01L33/08 , H01L33/22 , H01L33/46
摘要： A semiconductor light-emitting device comprises a semiconductor stack comprising a side, a first surface and a second surface opposite to the first surface, wherein the semiconductor stack further comprises a conductive via extending from the first surface to the second surface; a transparent conductive layer formed on the second surface; a first pad portion and a second pad portion formed on the first surface and electrically connected to the semiconductor stack; and an insulating layer formed between the first pad portion and the semiconductor stack and between the second pad portion and the semiconductor stack.
摘要翻译：半导体发光器件包括半导体叠层，其包括侧面，第一表面和与第一表面相对的第二表面，其中半导体堆叠还包括从第一表面延伸到第二表面的导电通孔; 形成在所述第二表面上的透明导电层; 第一焊盘部分和第二焊盘部分，形成在第一表面上并电连接到半导体堆叠; 以及形成在第一焊盘部分和半导体堆叠之间以及在第二焊盘部分和半导体堆叠之间的绝缘层。

6. 发明申请

US20140225138A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20140225138A1
公开(公告)日：2014-08-14
申请号：US14174036
申请日：2014-02-06
申请人： Epistar Corporation
发明人： Tsung-Hsien YANG , Tzu-Chieh HSU , Yi-Ming CHEN , Yi-Tang LAI , Jhih-Jheng YANG , Chih-Wei WEI , Ching-Sheng CHEN , Shih-I CHEN , Chia-Liang HSU , Ye-Ming HSU
IPC分类号： H01L33/22
CPC分类号： H01L33/02 , H01L33/0079
摘要： A light-emitting device is disclosed and comprises: a transparent substrate; a semiconductor light-emitting stack on the transparent substrate, wherein the semiconductor light-emitting stack comprises a first semiconductor layer close to the transparent substrate, a second semiconductor layer away from the transparent substrate, and a light-emitting layer capable of emitting a light disposed between the first semiconductor layer and the second semiconductor layer; and a bonding layer between the transparent substrate and the semiconductor light-emitting stack, wherein the bonding layer has a gradually changed refractive index, and each of critical angles at the bonding layer and the transparent substrate for the light emitted from the light-emitting layer towards the transparent substrate is larger than 35 degrees.
摘要翻译：公开了一种发光器件，包括：透明衬底; 在所述透明基板上的半导体发光层，其中，所述半导体发光层包括靠近所述透明基板的第一半导体层，远离所述透明基板的第二半导体层，以及能够发光的发光层设置在第一半导体层和第二半导体层之间; 以及在所述透明基板和所述半导体发光叠层之间的接合层，其中所述接合层具有逐渐变化的折射率，并且所述接合层处的临界角和从所述发光层发射的光的所述透明基板朝向透明基板大于35度。

7. 发明申请

US20140034977A1 LIGHT-EMITTING DIODE ARRAY 有权
标题翻译：发光二极管阵列
公开(公告)号：US20140034977A1
公开(公告)日：2014-02-06
申请号：US13959891
申请日：2013-08-06
申请人： Epistar Corporation
发明人： Tsung-Hsien YANG , Han-Min WU , Jhih-Sian WANG , Yi-Ming CHEN , Tzu-Ghieh HSU
IPC分类号： H01L33/08
CPC分类号： H01L27/15 , H01L27/156 , H01L29/0649 , H01L33/0079 , H01L33/08 , H01L33/22 , H01L33/385 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： The application provides a light-emitting diode array, including: a first light-emitting diode including a first area; a second area; a first isolation path between the first area and the second area, and the first isolation path including an electrode isolation layer; and an electrode contact layer covering the first area; a second light-emitting diode including a semiconductor stack layer; and a second electrical bonding pad on the semiconductor stack layer; and a second isolation path between the first light-emitting diode and the second light-emitting diode, wherein the second isolation path includes an electrical connecting structure electrically connected to the first light-emitting diode and the second light-emitting diode.
摘要翻译：本发明提供了一种发光二极管阵列，包括：包括第一区域的第一发光二极管; 第二个区域在第一区域和第二区域之间的第一隔离路径，并且第一隔离路径包括电极隔离层; 以及覆盖所述第一区域的电极接触层; 包括半导体堆叠层的第二发光二极管; 和在所述半导体堆叠层上的第二电焊盘; 以及第一发光二极管和第二发光二极管之间的第二隔离路径，其中第二隔离路径包括与第一发光二极管和第二发光二极管电连接的电连接结构。

8. 发明申请

US20190051798A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：US20190051798A1
公开(公告)日：2019-02-14
申请号：US16161966
申请日：2018-10-16
申请人： EPISTAR CORPORATION
发明人： Yi-Ming CHEN , Tsung-Hsien YANG
IPC分类号： H01L33/38 , H01L33/62 , H01L33/20 , H01L33/42 , H01L33/40 , H01L33/32 , H01L33/48
摘要： A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.

9. 发明申请

US20180145222A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：US20180145222A1
公开(公告)日：2018-05-24
申请号：US15857092
申请日：2017-12-28
申请人： EPISTAR CORPORATION
发明人： Yi-Ming CHEN , Tsung-Hsien YANG
IPC分类号： H01L33/38 , H01L33/20 , H01L33/62 , H01L33/40 , H01L33/32 , H01L33/48 , H01L33/42
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/40 , H01L33/42 , H01L33/486 , H01L33/62 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.

10. 发明申请

US20160141331A1 LIGHT-EMITTING DIODE 有权
标题翻译：发光二极管
公开(公告)号：US20160141331A1
公开(公告)日：2016-05-19
申请号：US15006374
申请日：2016-01-26
申请人： Epistar Corporation
发明人： Tsung-Hsien YANG , Han-Min WU , Jhih-Sian WANG , Yi-Ming CHEN , Tzu-Ghieh HSU
IPC分类号： H01L27/15 , H01L29/06 , H01L33/38
CPC分类号： H01L27/15 , H01L27/156 , H01L29/0649 , H01L33/0079 , H01L33/08 , H01L33/22 , H01L33/385 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： A light-emitting diode is provided. The light-emitting diode comprises: a first light-emitting structure, comprising: a first area; a second area; a first isolation path having an electrode isolation layer between the first area and the second area; an electrode contact layer covering the first area; and an electrical connecting structure covering the second area; wherein each of the first area and the second area sequentially comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and the electrode contact layer covers a sidewall of the first area.
摘要翻译：提供了一种发光二极管。发光二极管包括：第一发光结构，包括：第一区域; 第二个区域第一隔离路径，在第一区域和第二区域之间具有电极隔离层; 覆盖所述第一区域的电极接触层; 以及覆盖所述第二区域的电连接结构; 其中所述第一区域和所述第二区域中的每一个顺序地包括第一导电类型半导体层，有源层和第二导电类型半导体层，并且所述电极接触层覆盖所述第一区域的侧壁。

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