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1. 发明申请

US20150173186A1 STRETCHABLE DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：可扩展设备及其制造方法
公开(公告)号：US20150173186A1
公开(公告)日：2015-06-18
申请号：US14280205
申请日：2014-05-16
申请人： Electronics and Telecommunications Research Institute
发明人： Bock Soon NA , Soon-Won JUNG , Jae Bon KOO , Chan Woo PARK , Sang Chul LIM , Sang Seok LEE , Kyoung Ik CHO , Hye Yong CHU
IPC分类号： H05K1/03 , H05K3/10 , H05K3/36 , H05K3/02
CPC分类号： H05K1/0283 , H05K2201/017 , H05K2201/10106 , H05K2201/10128 , H05K2201/10151 , Y10T29/49156 , Y10T29/49158 , Y10T29/49162
摘要： Provided is a stretchable devices. The stretchable device includes a first stretchable substrate having a first wavy surface that wrinkles in a first direction; first wiring lines extending along the first wavy surface in the first direction; a second stretchable substrate having a second wavy surface that faces the first wavy surface and wrinkles in a second direction intersecting the first direction, wherein the second stretchable substrate is disposed on the first stretchable substrate; second wiring lines extending along the second wavy surface in the second direction; and interlayer insulating layers disposed on the intersections of the first wiring lines and the second wiring lines and disposed between the first wiring lines and the second wiring lines.
摘要翻译：提供了一种可拉伸的装置。该可拉伸装置包括：具有在第一方向上折皱的第一波状表面的第一可拉伸基底; 第一布线沿着第一方向沿第一波浪形表面延伸; 第二可拉伸基板，具有面向第一波状面的第二波状表面，并且沿与第一方向交叉的第二方向起皱纹，其中第二可拉伸基板设置在第一可拉伸基板上; 第二布线沿第二波形表面沿第二方向延伸; 以及层间绝缘层，其设置在第一布线和第二布线的交点上，并布置在第一布线和第二布线之间。

2. 发明申请

US20130161704A1 TRANSFERRED THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：转印薄膜晶体管及其制造方法
公开(公告)号：US20130161704A1
公开(公告)日：2013-06-27
申请号：US13775280
申请日：2013-02-25
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人： Jae Bon Koo , Jong-Hyun AHN , Seung Youl KANG , Hasan MUSARRAT , In-Kyu YOU , Kyoung Ik CHO
IPC分类号： H01L29/04
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L29/78603
摘要： Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.
摘要翻译：提供了一种转移的薄膜晶体管及其制造方法。该方法包括：形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽，以在所述沟槽之间限定有源层，所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺，从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。

3. 发明申请

US20180246000A1 PRESSURE SENSING ELEMENT 审中-公开
公开(公告)号：US20180246000A1
公开(公告)日：2018-08-30
申请号：US15890846
申请日：2018-02-07
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人： Seong Hyun KIM , Su Jae LEE , Kyoung Ik CHO , Chi-Sun HWANG
IPC分类号： G01L19/06 , G01L9/00
摘要： Provided is a pressure sensing element including a first electrode, a pressure sensing unit on the first electrode, a second electrode disposed on the pressure sensing unit and having first and second points on a top surface thereof, a first elastic member on the second electrode, and a second elastic member on the first elastic electrode, wherein a thickness of the first elastic member decreases from the first point toward the second point, and a thickness of the second elastic member increases from the second point toward the first point.

4. 发明申请

US20170186876A1 ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME 有权
公开(公告)号：US20170186876A1
公开(公告)日：2017-06-29
申请号：US15461567
申请日：2017-03-17
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人： Kyoung Ik CHO , Jae Bon KOO , Chan Woo PARK , Bock Soon NA , Sang Seok LEE , Sang Chul LIM , Soon-Won JUNG , Hye Yong CHU
IPC分类号： H01L29/786 , H01L21/311 , H01L29/66
CPC分类号： H01L29/78603 , H01L21/3105 , H01L21/31058 , H01L21/31144 , H01L27/1218 , H01L27/1266 , H01L29/66742
摘要： Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.

5. 发明申请

US20170032741A1 GATE DRIVING CIRCUIT AND ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE SAME 有权
标题翻译：闸门驱动电路和有机发光显示装置，包括它们
公开(公告)号：US20170032741A1
公开(公告)日：2017-02-02
申请号：US15220713
申请日：2016-07-27
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , University-Industry Cooperation Group of Kyung Hee Univ
发明人： Chunwon BYUN , Jong-Heon YANG , Sung-Min YOON , Kyoung Ik CHO , Chi-Sun HWANG
IPC分类号： G09G3/3266
CPC分类号： G09G3/3266 , G09G3/3233 , G09G2300/0842 , G09G2300/0861 , G09G2310/0286 , G09G2310/0289 , G09G2310/0291 , G09G2330/021 , G09G2330/028
摘要： Provided is a gate driving circuit. The gate driving circuit includes an ith modulation circuit and an ith line selection circuit (where i is a natural number greater than 1). The ith modulation circuit outputs an ith modulation voltage to an ith line selection circuit based on received first to third control signals. The ith line selection circuit includes a memory transistor that is turned on or turned off according to a level of the received ith modulation voltage.
摘要翻译：提供了栅极驱动电路。栅极驱动电路包括第i个调制电路和第i行选择电路（其中i是大于1的自然数）。第i个调制电路基于接收的第一至第三控制信号将第i个调制电压输出到第i行选择电路。第i行选择电路包括根据接收到的第i个调制电压的电平而导通或截止的存储晶体管。

6. 发明申请

US20140084283A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20140084283A1
公开(公告)日：2014-03-27
申请号：US13757699
申请日：2013-02-01
申请人： Electronics and Telecommunications Research Institute
发明人： Sang Chul LIM , Ji-Young OH , Seongdeok AHN , Kyoung Ik CHO , Sang Seok LEE , Jae Bon KOO
IPC分类号： H01L29/26
CPC分类号： H01L29/263 , H01L29/4908 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要： Provided are a thin film transistor and a method for manufacturing the same. The thin film transistor manufacturing method includes forming a gate electrode on a substrate, forming an active layer that is adjacent to the gate electrode and includes an oxide semiconductor, forming an oxygen providing layer on the active layer, forming a gate dielectric between the gate electrode and the active layer, forming source and drain electrodes coupled to the active layer, forming a planarizing layer covering the gate electrode and the gate dielectric, forming a hole exposing the active layer, and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen.
摘要翻译：提供一种薄膜晶体管及其制造方法。薄膜晶体管的制造方法包括在基板上形成栅电极，形成与栅电极相邻的有源层，并具有氧化物半导体，在有源层上形成氧供给层，在栅极电极有源层，形成耦合到有源层的源电极和漏电极，形成覆盖栅电极和栅电介质的平坦化层，形成暴露有源层的孔，并在气氛中对平坦化层进行热处理工艺的氧气。

7. 发明申请

US20180026104A1 P-TYPE OXIDE SEMICONDUCTOR, METHOD FOR FORMING P-TYPE OXIDE SEMICONDUCTOR, AND TRANSISTOR WITH THE P-TYPE OXIDE SEMICONDUCTOR 审中-公开
公开(公告)号：US20180026104A1
公开(公告)日：2018-01-25
申请号：US15621135
申请日：2017-06-13
申请人： Electronics and Telecommunications Research Institute
发明人： Sung Haeng CHO , Sooji NAM , Chi-Sun HWANG , Su Jae LEE , Kyoung Ik CHO , Jae-Eun PI
IPC分类号： H01L29/24 , H01L21/02 , H01L29/786
CPC分类号： H01L29/24 , H01L21/02381 , H01L21/02565 , H01L21/02579 , H01L21/02617 , H01L21/0262 , H01L21/02623 , H01L21/02631 , H01L29/7869
摘要： Provided are a p-type oxide semiconductor, a method of forming the p-type oxide semiconductor, and a transistor with the p-type oxide semiconductor. The p-type oxide semiconductor includes an alkali metal and a tin oxide.

8. 发明申请

US20160267827A1 DISPLAY PANEL AND DISPLAY DEVICE INCLUDING THE SAME 有权
标题翻译：显示面板和显示装置，包括它们
公开(公告)号：US20160267827A1
公开(公告)日：2016-09-15
申请号：US15007856
申请日：2016-01-27
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人： Chunwon BYUN , Jae-Eun PI , Kyoung Ik CHO , Hye Yong CHU , Chi-Sun HWANG
IPC分类号： G09G3/20
CPC分类号： G09G3/3648 , G09G3/3233 , G09G2300/023 , G09G2300/046 , G09G2300/0842
摘要： A display panel includes pixels connected to each of gate lines and data lines. Each of the pixels includes a first transistor connected between a corresponding data line among the data lines and a first node and configured to deliver a data signal of the corresponding data line to the first node in response to an input signal received through a corresponding gate line among the gate lines, a reflective element circuit connected to the first node, and configured to implement the reflective mode in response to a signal of the first node when a first mode selection signal indicates a reflective mode, an emissive element circuit connected to a second node, and configured to implement the emissive mode in response to the signal of the first node when the mode selection mode indicates an emissive mode.
摘要翻译：显示面板包括连接到每条栅极线和数据线的像素。每个像素包括连接在数据线中的对应数据线和第一节点之间的第一晶体管，并且被配置为响应于通过对应的栅极线接收的输入信号将对应的数据线的数据信号传送到第一节点在所述栅极线之间，连接到所述第一节点的反射元件电路，并且被配置为当第一模式选择信号指示反射模式时，响应于所述第一节点的信号来实现所述反射模式;连接到第二节点的发射元件电路并且被配置为当模式选择模式指示发射模式时响应于第一节点的信号来实现发射模式。

9. 发明申请

US20160246116A1 DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：显示装置及其制作方法
公开(公告)号：US20160246116A1
公开(公告)日：2016-08-25
申请号：US15010968
申请日：2016-01-29
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人： Jong-Heon YANG , Jae Bon KOO , Byoung-Hwa KWON , Gi Heon KIM , Yong Hae KIM , Hojun RYU , Chan Woo PARK , Chunwon BYUN , Hyunkoo LEE , Jong Tae LIM , Kyoung Ik CHO , Seong-Mok CHO , Hye Yong CHU , Chi-Sun HWANG
IPC分类号： G02F1/1335 , G02F1/133 , G02F1/1343
CPC分类号： G02F1/133308 , G02F2001/133317 , G02F2001/133616 , G02F2201/44
摘要： Provided is a display device. The display device includes a lower display element where a substrate, a first lower electrode, a liquid crystal part, and a second lower electrode are sequentially stacked, an upper display element stacked vertical to the lower display element, where a first upper electrode, a light emitting part, a second upper electrode, and a protective part are sequentially stacked, and a middle part configured to deliver a driving signal to the lower and upper display elements, between the lower and upper display elements.
摘要翻译：提供了一种显示装置。显示装置包括：下部显示元件，其中基板，第一下部电极，液晶部分和第二下部电极依次层叠;垂直于下部显示元件堆叠的上部显示元件，其中第一上部电极，发光部分，第二上电极和保护部分依次层叠，并且中间部分构造成在下显示元件和上显示元件之间向下显示元件和上显示元件传递驱动信号。

10. 发明申请

US20150159266A1 METHOD OF MANUFACTURING FLEXIBLE SUBSTRATE ALLOWING ELECTRONIC DEVICE TO BE MOUNTED THERETO 审中-公开
标题翻译：制造易于安装的电子器件的柔性基板的制造方法
公开(公告)号：US20150159266A1
公开(公告)日：2015-06-11
申请号：US14282980
申请日：2014-05-20
申请人： Electronics and Telecommunications Research Institute
发明人： Sang Chul LIM , Jae Bon KOO , Chan Woo PARK , Soon-Won JUNG , Bock Soon NA , Sang Seok LEE , Kyoung Ik CHO , Hye Yong CHU
IPC分类号： C23C16/02 , C23C16/04 , C23C16/06
CPC分类号： C23C16/042 , C23C14/20 , C23C14/22 , C23C16/06 , C23C16/44
摘要： Provided is a method of manufacturing a flexible substrate allowing an electronic device to be mounted thereto. The method of manufacturing a flexible substrate allowing an electronic device to be mountable thereto, includes preparing a substrate, applying a force to the substrate to stretch the substrate in horizontal direction, performing a surface treatment process on the substrate and forming a first region having a plurality of wavy surfaces, and forming an electrode on the first region.
摘要翻译：提供一种制造允许电子装置安装在其上的柔性基板的方法。制造允许电子装置可以安装的柔性基板的方法包括：准备基板，向基板施加力以在水平方向上拉伸基板，在基板上进行表面处理处理，并形成具有多个波状表面，并且在第一区域上形成电极。

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