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1. 发明授权

US07988835B2 Silicon dot forming method and silicon dot forming apparatus 失效
标题翻译：硅点形成方法和硅点形成装置
公开(公告)号：US07988835B2
公开(公告)日：2011-08-02
申请号：US11519154
申请日：2006-09-12
申请人： Eiji Takahashi , Takashi Mikami , Shigeaki Kishida , Kenji Kato , Atsushi Tomyo , Tsukasa Hayashi , Kiyoshi Ogata , Yuichi Setsuhara
发明人： Eiji Takahashi , Takashi Mikami , Shigeaki Kishida , Kenji Kato , Atsushi Tomyo , Tsukasa Hayashi , Kiyoshi Ogata , Yuichi Setsuhara
IPC分类号： C23C14/00 , C23C14/32 , C23C16/00 , C23C16/50
CPC分类号： C23C16/24 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02601 , H01L21/02631
摘要： There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber (1) provided with a silicon sputter target (e.g., target 30), or the hydrogen gas and the silane-containing gas are supplied into the chamber (1) without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/Hβ) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity Hβ of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).
摘要翻译：提供了形成具有基本上均匀的粒径并且在低温下直接在基底上表现出基本均匀的密度分布的硅点的方法和装置。将氢气（或氢气和含硅烷气体）供给到设置有硅溅射靶（例如，靶30）的真空室（1）中，或者将氢气和含硅烷的气体供应到在不将硅溅射靶设置在其中的腔室（1）中，向气体施加高频功率，从而产生等离子体，使得发射强度Si（288nm）的比率（Si（288nm）/ H＆bgr））（288nm）的波长288nm的硅原子和发光强度H＆bgr; 的等离子体发射波长为484nm的氢原子为10.0以下，优选为3.0以下，或0.5以下，形成粒径为20nm以下或10nm以下的硅点（SiD）在500度的低温下直接在基板（S）上。在等离子体中（如果存在硅溅射靶，则具有化学溅射）。

2. 发明申请

US20070007123A1 Silicon dot forming method and silicon dot forming apparatus 失效
标题翻译：硅点形成方法和硅点形成装置
公开(公告)号：US20070007123A1
公开(公告)日：2007-01-11
申请号：US11519154
申请日：2006-09-12
申请人： Eiji Takahashi , Takashi Mikami , Shigeaki Kishida , Kenji Kato , Atsushi Tomyo , Tsukasa Hayashi , Kiyoshi Ogata
发明人： Eiji Takahashi , Takashi Mikami , Shigeaki Kishida , Kenji Kato , Atsushi Tomyo , Tsukasa Hayashi , Kiyoshi Ogata
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： C23C16/24 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02601 , H01L21/02631
摘要： There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber (1) provided with a silicon sputter target (e.g., target 30), or the hydrogen gas and the silane-containing gas are supplied into the chamber (1) without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/Hβ) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity Hβ of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).
摘要翻译：提供了形成具有基本上均匀的粒径并且在低温下直接在基底上表现出基本均匀的密度分布的硅点的方法和装置。将氢气（或氢气和含硅烷气体）供给到设置有硅溅射靶（例如，靶30）的真空室（1）中，或者将氢气和含硅烷的气体供应到在不将硅溅射靶设置在其中的腔室（1）中，向气体施加高频功率，从而产生等离子体，使得发射强度Si（（（nm）/ Hbeta） 288nm波长的硅原子和等离子体发射波长为484nm的氢原子的发光强度Hbeta为10.0以下，优选为3.0以下，0.5以下，硅点（SiD ），在500度的低温下直接在基板（S）上形成粒径为20nm以下或10nm以下的粒径。在等离子体中（如果存在硅溅射靶，则具有化学溅射）。

3. 发明申请

US20080035471A1 Silicon object forming method and apparatus 失效
标题翻译：硅体形成方法和装置
公开(公告)号：US20080035471A1
公开(公告)日：2008-02-14
申请号：US11524207
申请日：2006-09-21
申请人： Takashi Mikami , Atsushi Tomyo , Kenji Kato , Eiji Takahashi , Tsukasa Hayashi
发明人： Takashi Mikami , Atsushi Tomyo , Kenji Kato , Eiji Takahashi , Tsukasa Hayashi
IPC分类号： C23C14/00
CPC分类号： C23C14/3457 , C23C14/228 , C23C14/3464 , H01J37/32357 , H01J37/32972 , H01J37/34
摘要： A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical sputtering is effected on the silicon sputter target with the plasma thus formed, producing particles contributing to formation of silicon object, whereby a silicon object is formed, on the substrate, from the particles moved from the second chamber to the first chamber.
摘要翻译：硅物体形成目标衬底被布置在第一腔室中，硅溅射靶设置在与第一腔室连通的第二室中，用于化学溅射的等离子体由第二腔室中的氢气形成，化学溅射由此形成等离子体的硅溅射靶，产生有助于硅物体形成的颗粒，由此在从第二室移动到第一室的颗粒的基底上形成硅物体。

4. 发明授权

US07887677B2 Silicon object forming method and apparatus 失效
标题翻译：硅体形成方法和装置
公开(公告)号：US07887677B2
公开(公告)日：2011-02-15
申请号：US11524207
申请日：2006-09-21
申请人： Takashi Mikami , Atsushi Tomyo , Kenji Kato , Eiji Takahashi , Tsukasa Hayashi
发明人： Takashi Mikami , Atsushi Tomyo , Kenji Kato , Eiji Takahashi , Tsukasa Hayashi
IPC分类号： C23C14/34
CPC分类号： C23C14/3457 , C23C14/228 , C23C14/3464 , H01J37/32357 , H01J37/32972 , H01J37/34
摘要： A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical sputtering is effected on the silicon sputter target with the plasma thus formed, producing particles contributing to formation of silicon object, whereby a silicon object is formed, on the substrate, from the particles moved from the second chamber to the first chamber.
摘要翻译：硅物体形成目标衬底被布置在第一腔室中，硅溅射靶设置在与第一腔室连通的第二室中，用于化学溅射的等离子体由第二腔室中的氢气形成，化学溅射由此形成等离子体的硅溅射靶，产生有助于硅物体形成的颗粒，由此在从第二室移动到第一室的颗粒的基底上形成硅物体。

5. 发明申请

US20070063183A1 Substrate having silicon dots 审中-公开
标题翻译：具有硅点的基板
公开(公告)号：US20070063183A1
公开(公告)日：2007-03-22
申请号：US11523039
申请日：2006-09-19
申请人： Kenji Kato , Atsushi Tomyo , Eiji Takahashi , Takashi Mikami , Tsukasa Hayashi
发明人： Kenji Kato , Atsushi Tomyo , Eiji Takahashi , Takashi Mikami , Tsukasa Hayashi
IPC分类号： H01L31/00 , H01L29/06
CPC分类号： H01L29/127 , B82Y10/00 , B82Y30/00 , C23C14/0057 , C23C14/165 , C23C14/54 , C23C14/564 , H01L21/02422 , H01L21/0245 , H01L21/02488 , H01L21/02505 , H01L21/02513 , H01L21/02532 , H01L21/02601
摘要： A substrate having silicon dots wherein at least one insulating layer and at least one group of silicon dots are formed on a substrate selected from a non-alkali glass substrate and a substrate made of a polymer material.
摘要翻译：具有硅点的基板，其中在选自无碱玻璃基板和由聚合物材料制成的基板的基板上形成至少一个绝缘层和至少一组硅点。

6. 发明申请

US20070056846A1 Silicon dot forming method and silicon dot forming apparatus 审中-公开
标题翻译：硅点形成方法和硅点形成装置
公开(公告)号：US20070056846A1
公开(公告)日：2007-03-15
申请号：US11519967
申请日：2006-09-13
申请人： Eiji Takahashi , Atsushi Tomyo , Kenji Kato , Takashi Mikami , Tsukasa Hayashi
发明人： Eiji Takahashi , Atsushi Tomyo , Kenji Kato , Takashi Mikami , Tsukasa Hayashi
IPC分类号： C23C14/00
CPC分类号： C23C14/3457 , C23C14/14 , C23C14/3414 , C23C14/3471 , C23C14/544 , H01J37/32009 , H01J37/32532
摘要： A substrate is accommodated in a vacuum chamber provided with a silicon sputter target, a sputtering gas (typically a hydrogen gas) is supplied into the vacuum chamber, a high-frequency power is applied to the gas to form plasma in the chamber, a bias voltage is applied to the target for control of chemical sputtering, and the chemical sputtering is effected on the target by the plasma to form silicon dots on the substrate.
摘要翻译：将衬底容纳在设置有硅溅射靶的真空室中，将溅射气体（通常为氢气）供应到真空室中，向气体施加高频电力以在腔室中形成等离子体，偏压电压施加到靶，用于化学溅射的控制，并且通过等离子体在靶上进行化学溅射，以在衬底上形成硅点。

7. 发明授权

US5122483A Method of forming a highly insulative thin films 失效
标题翻译：形成高绝缘薄膜的方法
公开(公告)号：US5122483A
公开(公告)日：1992-06-16
申请号：US634528
申请日：1990-12-27
申请人： Shigeki Sakai , Kiyoshi Ogata , Tsukasa Hayashi
发明人： Shigeki Sakai , Kiyoshi Ogata , Tsukasa Hayashi
IPC分类号： C23C14/10 , H01L21/31 , H01L21/316 , H01L21/318 , H01L21/822 , H01L27/04
CPC分类号： H01L21/02164 , H01L21/31604 , H01L21/31612 , H01L21/3162 , H01L21/318 , H01L21/3185
摘要： A method of forming a highly insulative silicon oxide thin film including the steps of providing a substrate, depositing silicon on the substrate, and injecting an ion beam of oxygen or a mixed gas consisting of oxygen and an inert gas simultaneously or alternately with the depositing of the silicon. Silicon oxide may be deposited on the substrate in combination with the injection of ions of an inert gas. Other metals made be deposited along with the injection of oxygen or nitrogen cations.
摘要翻译：一种形成高绝缘性氧化硅薄膜的方法，包括以下步骤：提供衬底，在衬底上沉积硅，以及同时或交替地将氧离子束或由氧气和惰性气体组成的混合气体注入到离子束硅。氧化硅可以与注入惰性气体的离子一起沉积在衬底上。制造的其他金属与氧或氮阳离子的注入一起沉积。

8. 发明授权

US6156507A Method of identifying methicillin-resistant Staphylococcus aureus or methicillin-resistant coagulase-negative staphylococci 失效
标题翻译：鉴定耐甲氧西林金黄色葡萄球菌或耐甲氧西林凝固酶阴性葡萄球菌的方法
公开(公告)号：US6156507A
公开(公告)日：2000-12-05
申请号：US945810
申请日：1997-10-23
申请人： Keiichi Hiramatsu , Teruyo Ito , Akira Awaya , Hiroie Ohno , Tsukasa Hayashi
发明人： Keiichi Hiramatsu , Teruyo Ito , Akira Awaya , Hiroie Ohno , Tsukasa Hayashi
IPC分类号： G01N33/569 , C12N15/09 , C12Q1/68 , C07H21/04 , C12P19/34
CPC分类号： C12Q1/689 , C12Q2600/156 , C12Q2600/16
摘要： Disclosed is a specific identification method of an MRSA and MRC-NS, which is speedy, simple and reliable. Specifically, the present invention provides a diagnostic method of an MRSA or MRC-NS, which comprises performing a reaction with a sample by making combined use of a part of a mecDNA, which is an integrated adventitious DNA existing on a chromosome of the MRSA or MRC-NS and carrying an mecA gene thereon, and a part of a nucleotide sequence of a chromosomal DNA surrounding the integrated DNA; and also a diagnostic method of an MRSA or MRC-NS by PCR, LCR or hybridization, which comprises performing a reaction with a sample by using a nucleotide sequence of a chromosomal DNA surrounding an integrated site of a mecDNA in a chromosome of an MSSA or MSC-NS, wherein said method makes use of an occurrence of a negative reaction when said sample contains a mecDNA integrated therein.
摘要翻译： PCT No.PCT / JP97 / 00487 Sec。 371日期：1997年10月23日 102（e）日期1997年10月23日PCT 1997年2月21日提交PCT公布。公开号WO97 / 31125 PCT 日期1997年8月28日公开是MRSA和MRC-NS的具体识别方法，速度快，简单可靠。具体地说，本发明提供MRSA或MRC-NS的诊断方法，其包括通过组合使用存在于MRSA的染色体上的整合的不定型DNA的一部分mecDNA或与 MRC-NS并在其上携带mecA基因，以及围绕整合DNA的染色体DNA的核苷酸序列的一部分; 以及通过PCR，LCR或杂交的MRSA或MRC-NS的诊断方法，其包括通过使用在MSSA的染色体中的mecDNA的整合位点周围的染色体DNA的核苷酸序列与样品进行反应，或 MSC-NS，其中当所述样品含有整合在其中的mecDNA时，所述方法利用了负反应的发生。

9. 发明授权

US08406972B2 Device and method for controlling automatic transmission 有权
标题翻译：用于控制自动变速箱的装置和方法
公开(公告)号：US08406972B2
公开(公告)日：2013-03-26
申请号：US12865158
申请日：2009-01-26
申请人： Naohiro Yamada , Tsukasa Hayashi
发明人： Naohiro Yamada , Tsukasa Hayashi
IPC分类号： G06F7/00 , G06F17/00 , G06F19/00 , H02P17/00 , B60W10/04 , B60W10/10
CPC分类号： F16H59/44 , F16H61/0213 , Y10T477/33 , Y10T477/60
摘要： When a read-ahead vehicle speed is calculated using an integrator and a delay element, a predetermined gain used for an integral calculation is made small if a result of the integral calculation greater than a predetermined value based on an actual vehicle speed.
摘要翻译：当使用积分器和延迟元件计算预读车速时，如果积分计算的结果基于实际车速大于预定值，则用于积分计算的预定增益变小。

10. 发明授权

US08321099B2 Device and method for controlling automatic gearbox 有权
标题翻译：控制自动变速箱的装置和方法
公开(公告)号：US08321099B2
公开(公告)日：2012-11-27
申请号：US12865160
申请日：2009-01-26
申请人： Naohiro Yamada , Tsukasa Hayashi
发明人： Naohiro Yamada , Tsukasa Hayashi
IPC分类号： G06F7/00 , G06F17/00 , G06F19/00 , F16H61/40
CPC分类号： F16H61/0213 , F16H59/18 , F16H59/44 , F16H61/68 , Y10T477/636
摘要： When an accelerator pedal opening angle is large, a target vehicle speed is calculated using a read-ahead vehicle speed and, when the accelerator pedal opening angle is small, the target gear shift ratio is calculated using an actual vehicle speed.
摘要翻译：当加速器踏板开度大时，使用预读车速计算目标车速，并且当加速器踏板开度小时，使用实际车速来计算目标变速比。

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