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1. 发明授权

US5571970A Pressure sensor 失效
标题翻译：压力传感器
公开(公告)号：US5571970A
公开(公告)日：1996-11-05
申请号：US218973
申请日：1994-03-28
申请人： Eiji Mutoh , Akihiro Niiya , Shigemitsu Ogawa , Fujito Tanaka , Munenori Tsuchiya , Daiji Uehara , Kenji Nagasawa
发明人： Eiji Mutoh , Akihiro Niiya , Shigemitsu Ogawa , Fujito Tanaka , Munenori Tsuchiya , Daiji Uehara , Kenji Nagasawa
IPC分类号： G01L9/00 , G01L9/12
CPC分类号： G01L9/0075 , G01L9/125
摘要： A pressure sensor based on electrostatic capacity method is disclosed, which comprises the main body of a pressure sensing element having one end surface as a pressured face and the other end surface as a back, for detecting the pressure of a measurement fluid acting on the pressured face, a seal member, a measure pattern on the back, and a one-chip IC. For size reduction, an input-output policy is provided near the main body of the pressure sensing element, and it effects input and output with respect to the pressure sensing element main body while preventing external disturbances and improving the accuracy of measurement.
摘要翻译：公开了一种基于静电容量法的压力传感器，其包括具有作为加压面的一个端面和另一个端面作为背面的压力感测元件的主体，用于检测作用在受压面上的测量流体的压力表面，密封件，背面的测量图案以及单芯片IC。为了减小尺寸，在压力感测元件的主体附近设置输入输出策略，并且在防止外部干扰并提高测量精度的同时，对压力感测元件主体进行输入输出。

2. 发明授权

US5561247A Pressure sensor 失效
标题翻译：压力传感器
公开(公告)号：US5561247A
公开(公告)日：1996-10-01
申请号：US218979
申请日：1994-03-28
申请人： Eiji Mutoh , Akihiro Niiya , Shigemitsu Ogawa , Fujito Tanaka , Munenori Tsuchiya , Daiji Uehara , Kenji Nagasawa
发明人： Eiji Mutoh , Akihiro Niiya , Shigemitsu Ogawa , Fujito Tanaka , Munenori Tsuchiya , Daiji Uehara , Kenji Nagasawa
IPC分类号： G01L9/00 , G01L9/12
CPC分类号： G01L9/0075 , G01L9/125
摘要： A pressure sensor of electrostatic capacitance type is disclosed, which detects the pressure of a measurement fluid acting on a pressured surface of an elastic diaphragm from a change in the electrostatic capacitance between opposed electrodes provided on opposed surface of a ceramic base and the elastic diaphragm. The base side electrode comprises a plurality of division electrode one enclosing the next inner one. Of these division electrodes the outermost one is grounded or held at a predetermined voltage, or it is covered by overcoat glass, and thus it is imparted with a function of stabilizing the measurement value. In an electrode hole for leading an electrode to the outside, a path is formed for leading atmospheric air or like fluid providing for the reference pressure for pressure measurement into the space defined between the base and elastic diaphragm.
摘要翻译：公开了一种静电电容式的压力传感器，其从设置在陶瓷基体的相对表面上的相对电极与弹性膜片之间的静电电容的变化来检测作用在弹性膜片的加压表面上的测量流体的压力。基极电极包括多个分隔电极，其包围下一个内电极。在这些分割电极中，最外侧的电极接地或保持在预定电压，或被覆盖玻璃覆盖，因此赋予测量值稳定的功能。在用于将电极引导到外部的电极孔中，形成用于引导大气空气或类似流体的路径，用于将压力测量的参考压力提供到在基部和弹性隔膜之间限定的空间中。

3. 发明授权

US5973408A Electrode structure for a semiconductor device 失效
标题翻译：半导体器件的电极结构
公开(公告)号：US5973408A
公开(公告)日：1999-10-26
申请号：US882191
申请日：1997-06-25
申请人： Hiroshi Nagasaka , Daiji Uehara , Kouichiro Sugisaki
发明人： Hiroshi Nagasaka , Daiji Uehara , Kouichiro Sugisaki
IPC分类号： G01L9/04 , G01L9/00 , H01L21/28 , H01L23/485 , H01L29/45 , H01L29/84 , H01L29/12
CPC分类号： H01L29/456 , H01L23/485 , H01L2924/0002
摘要： An electrode structure for a semiconductor device is formed on the semiconductor device, consisting of silicon formed on a substrate to detect a physical quantity of the substrate and converting it into an electric signal, and transfers the converted electric signal to the outside. The electrode structure for the semiconductor device has a barrier layer consisting of a high-melting metal nitride and formed on a contact area of the semiconductor device and an electrode wiring formed on the barrier layer. The barrier layer has different composition ratios of the high-melting metal nitride in correspondence to each stage in the thickness of the barrier layer, in which the composition ratios are a composition ratio making a powerful bond performance at a bonding border area with the electrode wiring, and a composition ratio in which a metal element of the electrode wiring does not diffuse into the semiconductor in the barrier layer.
摘要翻译：用于半导体器件的电极结构形成在半导体器件上，由形成在衬底上的硅组成，以检测衬底的物理量并将其转换为电信号，并将转换的电信号传送到外部。用于半导体器件的电极结构具有由高熔点金属氮化物构成的阻挡层，形成在半导体器件的接触区域和形成在阻挡层上的电极配线之间。阻挡层具有与阻挡层的厚度的各阶段对应的高熔点金属氮化物的组成比不同，其中组成比是在与电极配线的接合边界区域形成强大的结合性能的组成比，并且电极布线的金属元素不扩散到阻挡层中的半导体中的组成比。

4. 发明申请

US20080083287A1 Load Sensor And Manufacturing Method Of The Same 审中-公开
标题翻译：负载传感器及其制造方法
公开(公告)号：US20080083287A1
公开(公告)日：2008-04-10
申请号：US11631927
申请日：2005-07-14
申请人： Daiji Uehara , Yasushi Yamamoto , Toshio Honma
发明人： Daiji Uehara , Yasushi Yamamoto , Toshio Honma
IPC分类号： G01L1/04 , H01C17/00
CPC分类号： G01L1/044 , G01L1/2206 , Y10T29/49103
摘要： An object of the present invention is to provide a low cost load sensor while securing compact dimensions, high reliability and quality, and also to provide a manufacturing method of the load sensor. To this end, there is provided a load sensor provided with a thin-plate-like sensor plate 5 and plural strain gauges 21a to 22d attached to the sensor plate 5, wherein both ends of the sensor plate 5 in one axis direction thereof serve as fixing parts for fixing the sensor plate 5 to an arbitrary object, while the center point C of the sensor plate 5 serves as a transmission part for transmitting a displacement or a load to the sensor plate 5, wherein the strain gauges 21a to 22d are arranged in positions which are point symmetrical with respect to the center point C, and gauge pairs are constituted by making pairs of the strain gauges 21a to 22d which are arranged in point symmetrical positions electrically connected in parallel or in series with each other, and wherein the respective gauge pairs are electrically connected in series with each other to constitute a bridge circuit with the strain gauges 21a to 22d.
摘要翻译：本发明的目的是提供一种低成本的负载传感器，同时确保紧凑的尺寸，高可靠性和高质量，并且还提供负载传感器的制造方法。为此，提供一种负载传感器，其设置有安装在传感器板5上的薄板状传感器板5和多个应变计21a〜22d，其中传感器板5的一个轴方向的两端用作将传感器板5固定在任意物体上的固定部件，而传感器板5的中心点C用作用于将传感器板5的位移或载荷传递到传感器板5的传递部分，其中应变仪21a至 22d被布置在相对于中心点C点对称的位置，并且量规对通过使成对的应变计21a至22d成对布置成并联或串联连接的点对称位置并且其中相应的量规对彼此串联电连接以构成具有应变计21a至22d的桥接电路。

5. 发明授权

US07135755B2 Integrated semiconductor device providing for preventing the action of parasitic transistors 有权
标题翻译：提供用于防止寄生晶体管的作用的集成半导体器件
公开(公告)号：US07135755B2
公开(公告)日：2006-11-14
申请号：US10948936
申请日：2004-09-24
申请人： Daiji Uehara , Hiroaki Nakamura
发明人： Daiji Uehara , Hiroaki Nakamura
IPC分类号： H01L29/00
CPC分类号： H01L27/0823 , H01L21/761
摘要： An electric motor drive system is disclosed which includes a required number of motor driver circuits connected one to each motor armature coil. Fabricated in the form of an integrated circuit, each such motor driver circuit has a parasitic transistor unavoidably created between two neighboring transistors. The parasitic transistor would become conductive when the driver circuit output had a negative potential, adversely affecting the driver circuit operation. An additional transistor is provided in one embodiment of the invention in order to inhibit such action of the parasitic transistor. Becoming conductive when the driver circuit output goes negative, the additional transistor prevents conduction through the parasitic transistor. Another parasitic transistor is intentionally created in another embodiment for the same purpose.
摘要翻译：公开了一种电动机驱动系统，其包括与每个电动机电枢线圈连接的所需数量的电动机驱动电路。以集成电路的形式制造，每个这样的电动机驱动器电路具有不可避免地在两个相邻晶体管之间产生的寄生晶体管。当驱动器电路输出为负电位时，寄生晶体管将变为导通，不利地影响驱动器电路操作。在本发明的一个实施例中提供了附加晶体管，以便抑制寄生晶体管的这种作用。当驱动器电路输出为负时，导通，附加晶体管可防止通过寄生晶体管导通。为了相同的目的，在另一个实施例中有意地创建了另一个寄生晶体管。

6. 发明授权

US06941812B2 Converter and method of manufacturing the same 有权
标题翻译：转换器及其制造方法
公开(公告)号：US06941812B2
公开(公告)日：2005-09-13
申请号：US10644222
申请日：2003-08-19
申请人： Yukimitsu Sekimori , Daiji Uehara
发明人： Yukimitsu Sekimori , Daiji Uehara
IPC分类号： G01L9/00 , G01L7/00 , G01L19/06 , H01L29/84
CPC分类号： G01L9/0073 , G01L19/0627
摘要： A pressure sensor 10 included an upper substrate 30 having a detection face 30A, a diaphragm 20 provided with a space from the detection substrate 30 and displaceable to and from the upper substrate 30, fixed electrodes 32, 33 provided on the detection face 30A of the upper substrate 30, and a first signal fetching section 22 electrically connected to the diaphragm 20, and the diaphragm 20 is formed by dry-etching single-crystal silicon with the specific resistance lowered to 1.0 Ω·cm or below by mixing dopant lowering the resistance value.
摘要翻译：压力传感器10包括具有检测面30A的上基板30，从检测基板30设置有空间且能够从上基板30移位的隔膜20，设置在检测面30A上的固定电极32,33 以及与隔膜20电连接的第一信号取出部22，通过将电阻降低到1.0Ω·cm以下的单晶硅进行干法蚀刻而形成，通过混合掺杂剂降低电阻值。

7. 发明授权

US5036422A Solenoid pump driving circuit 失效
标题翻译：电磁泵驱动电路
公开(公告)号：US5036422A
公开(公告)日：1991-07-30
申请号：US350880
申请日：1989-05-12
申请人： Akito Uchida , Daiji Uehara
发明人： Akito Uchida , Daiji Uehara
IPC分类号： H01F7/18 , H01H47/22
CPC分类号： H01H47/22
摘要： A driving circuit for driving a solenoid pump or the like, wherein a driving current supplied from a rechargeable battery 1 is alternately switched to on and off when flowing in an inductive element 2. The inductive element produces a driving force applied to the solenoid pump when the driving current flows therein. The inductive element generated a counter-electromotive force when the driving current flowing therein is interrupted. An accumulating circuit comprising a capacitor 5 is connected to the inductive element to accumulate the counter-electromotive force, and a releasing circuit 4 is connected to the accumulating circuit to release the counter-electromotive force accumulated in the accumulating circuit. The counter-electromotive force released from the releasing circuit produces a superfluous driving current and the latter current is superposed on the driving current supplied form the battery. The driving circuit thus configured reduces power consumption as well as eliminates the influence of the counter-electromotive force on the power source, thus preventing deterioration of the power source and elongating its service life. In addition, a single power source makes the driving circuit compact in size and light in weight.
摘要翻译：一种用于驱动电磁泵等的驱动电路，其中当从电池元件2流动时，从可再充电电池1供应的驱动电流交替切换为开和关。电感元件产生施加到电磁泵的驱动力，当电磁泵驱动电流流过其中。当流过其中的驱动电流被中断时，感应元件产生反电动势。包括电容器5的累积电路连接到电感元件以积累反电动势，并且释放电路4连接到累积电路以释放累积在积累电路中的反电动势。从释放电路释放的反电动势产生多余的驱动电流，并且后一电流叠加在从电池供应的驱动电流上。这样构成的驱动电路能够消除功率消耗，消除反电动势对电源的影响，防止电源劣化，延长使用寿命。此外，单个电源使得驱动电路的尺寸和重量轻。

8. 发明授权

US08096189B2 Physical quantity sensor and method for manufacturing the same 有权
标题翻译：物理量传感器及其制造方法
公开(公告)号：US08096189B2
公开(公告)日：2012-01-17
申请号：US12419656
申请日：2009-04-07
申请人： Daiji Uehara , Yoichi Kobayashi
发明人： Daiji Uehara , Yoichi Kobayashi
IPC分类号： G01L9/12
CPC分类号： G01L9/0073 , Y10T156/1052
摘要： A physical quantity sensor includes two substrates and a movable electrode that is disposed between the two substrates and is bonded to the two substrates. In the physical quantity sensor, the movable electrode has an elastically deformable diaphragm and one of the two substrates is an electrode substrate having a detection electrode on a detection surface opposite to the diaphragm to detect capacitance between the diaphragm and the detection electrode. In the physical quantity sensor, in a range between a room temperature and a bonding temperature when the two substrates and the movable electrode are bonded, coefficients of thermal expansion of the two substrates are smaller than that of the movable electrode and in a temperature range where the physical quantity sensor is used, a coefficient of thermal expansion of the movable electrode is between a first and second substrates.
摘要翻译：物理量传感器包括两个基板和设置在两个基板之间并结合到两个基板上的可动电极。在物理量传感器中，可动电极具有可弹性变形的膜片，并且两个基板中的一个基板是在与膜片相对的检测表面上具有检测电极的电极基板，以检测隔膜和检测电极之间的电容。在物理量传感器中，当两个基板和可动电极接合时，在室温和接合温度之间的范围内，两个基板的热膨胀系数小于可动电极的热膨胀系数，在温度范围使用物理量传感器，可动电极的热膨胀系数在第一和第二基板之间。

9. 发明申请

US20090255343A1 PHYSICAL QUANTITY SENSOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：物理量传感器及其制造方法
公开(公告)号：US20090255343A1
公开(公告)日：2009-10-15
申请号：US12419656
申请日：2009-04-07
申请人： Daiji Uehara , Yoichi Kobayashi
发明人： Daiji Uehara , Yoichi Kobayashi
IPC分类号： G01L9/12 , B32B38/10
CPC分类号： G01L9/0073 , Y10T156/1052
摘要： A physical quantity sensor includes two substrates and a movable electrode that is disposed between the two substrates and is bonded to the two substrates. In the physical quantity sensor, the movable electrode has an elastically deformable diaphragm and one of the two substrates is an electrode substrate having a detection electrode on a detection surface opposite to the diaphragm to detect capacitance between the diaphragm and the detection electrode. In the physical quantity sensor, in a range between a room temperature and a bonding temperature when the two substrates and the movable electrode are bonded, coefficients of thermal expansion of the two substrates are smaller than that of the movable electrode and in a temperature range where the physical quantity sensor is used, a coefficient of thermal expansion of the movable electrode is between a first and second substrates.
摘要翻译：物理量传感器包括两个基板和设置在两个基板之间并结合到两个基板上的可动电极。在物理量传感器中，可动电极具有可弹性变形的膜片，并且两个基板中的一个基板是在与膜片相对的检测表面上具有检测电极的电极基板，以检测隔膜和检测电极之间的电容。在物理量传感器中，当两个基板和可动电极接合时，在室温和接合温度之间的范围内，两个基板的热膨胀系数小于可动电极的热膨胀系数，在温度范围使用物理量传感器，可动电极的热膨胀系数在第一和第二基板之间。

10. 发明申请

US20050067660A1 Integrated semiconductor device providing for preventing the action of parasitic transistors 有权
标题翻译：提供用于防止寄生晶体管的作用的集成半导体器件
公开(公告)号：US20050067660A1
公开(公告)日：2005-03-31
申请号：US10948936
申请日：2004-09-24
申请人： Daiji Uehara , Hiroaki Nakamura
发明人： Daiji Uehara , Hiroaki Nakamura
IPC分类号： H01L21/331 , H01L21/761 , H01L21/8222 , H01L27/06 , H01L27/082 , H01L29/732 , H01L29/94
CPC分类号： H01L27/0823 , H01L21/761
摘要： An electric motor drive system is disclosed which includes a required number of motor driver circuits connected one to each motor armature coil. Fabricated in the form of an integrated circuit, each such motor driver circuit has a parasitic transistor unavoidably created between two neighboring transistors. The parasitic transistor would become conductive when the driver circuit output had a negative potential, adversely affecting the driver circuit operation. An additional transistor is provided in one embodiment of the invention in order to inhibit such action of the parasitic transistor. Becoming conductive when the driver circuit output goes negative, the additional transistor prevents conduction through the parasitic transistor. Another parasitic transistor is intentionally created in another embodiment for the same purpose.
摘要翻译：公开了一种电动机驱动系统，其包括与每个电动机电枢线圈连接的所需数量的电动机驱动电路。以集成电路的形式制造，每个这样的电动机驱动器电路具有不可避免地在两个相邻晶体管之间产生的寄生晶体管。当驱动器电路输出为负电位时，寄生晶体管将变为导通，不利地影响驱动器电路操作。在本发明的一个实施例中提供了附加晶体管，以便抑制寄生晶体管的这种作用。当驱动器电路输出为负时，导通，附加晶体管可防止通过寄生晶体管导通。为了相同的目的，在另一个实施例中有意地创建了另一个寄生晶体管。

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