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1. 发明授权

US06980473B1 Memory device and method 有权
标题翻译：内存设备和方法
公开(公告)号：US06980473B1
公开(公告)日：2005-12-27
申请号：US10677031
申请日：2003-10-01
申请人： Edward V. Bautista, Jr. , Ken Cheong Cheah , Chi-Mun Ho
发明人： Edward V. Bautista, Jr. , Ken Cheong Cheah , Chi-Mun Ho
IPC分类号： G11C16/04 , G11C16/12 , G11C16/30 , G11C16/34
CPC分类号： G11C16/3459 , G11C16/12 , G11C16/30 , G11C16/3454 , G11C29/021 , G11C29/028
摘要： A memory device and a method for compensating for a load current in the memory device. The memory device includes a plurality of I/O buffers where each I/O buffer includes an I/O write-buffer driver circuit. The I/O write-buffer driver circuit is coupled to a load current compensation circuit. Although each I/O buffer includes an I/O write-buffer circuit, a single load current compensation circuit may be coupled to several I/O write-buffer driver circuits. The load current compensation circuit generates a load compensation current for each I/O buffer circuit that is not being programmed. The load compensation current increases the load current so that a drain-side programming voltage (VPROG) drives a substantially constant load current, wherein the drain-side programming voltage is substantially independent of the number of bits being programmed.
摘要翻译：一种用于补偿存储器件中的负载电流的存储器件和方法。存储器件包括多个I / O缓冲器，其中每个I / O缓冲器包括I / O写缓冲器驱动电路。 I / O写缓冲器驱动电路耦合到负载电流补偿电路。尽管每个I / O缓冲器都包含一个I / O写缓冲电路，但单个负载电流补偿电路可以耦合到多个I / O写缓冲器驱动电路。负载电流补偿电路为未编程的每个I / O缓冲电路产生负载补偿电流。负载补偿电流增加负载电流，使得漏极侧编程电压（VPROG）驱动基本恒定的负载电流，其中漏极侧编程电压基本上与被编程的位数无关。

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