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1. 发明申请

US20130293523A1 VOLTAGE BIASED PULL ANALOG INTERFEROMETRIC MODULATOR WITH CHARGE INJECTION CONTROL 有权
标题翻译：带电荷注入控制的电压偏置拉模式干涉式调节器
公开(公告)号：US20130293523A1
公开(公告)日：2013-11-07
申请号：US13462696
申请日：2012-05-02
申请人： Edward K. Chan , John H. Hong , Cheonhong Kim , Chong U. Lee , Bing Wen
发明人： Edward K. Chan , John H. Hong , Cheonhong Kim , Chong U. Lee , Bing Wen
IPC分类号： G09G5/00 , G01R35/00 , H05K13/00 , H03K3/01
CPC分类号： G02B26/001 , G09G3/3466 , G09G3/3696 , G09G2310/0248 , G09G2310/0259 , G09G2310/0272 , G09G2320/0295 , Y10T29/49117
摘要： This disclosure provides systems, methods and apparatus for driving three-terminal electromechanical systems (EMS) devices. The driving systems and methods described herein include a switched capacitor charge injection circuit that is configured to isolate a single EMS device and transfer a desired amount of charge to the isolated device such that the device can be actuated to produce a desired optical, electrical or mechanical effect. The charge injection circuit can include an operational amplifier and can be connected such that the EMS device is placed in the feedback path of the operational amplifier.
摘要翻译：本公开提供用于驱动三端子机电系统（EMS）装置的系统，方法和装置。本文描述的驱动系统和方法包括开关电容器电荷注入电路，其被配置为隔离单个EMS装置并将期望量的电荷转移到隔离装置，使得该装置可被致动以产生期望的光学，电或机械影响。电荷注入电路可以包括运算放大器并且可以被连接使得EMS装置被放置在运算放大器的反馈路径中。

2. 发明授权

US09035934B2 Voltage biased pull analog interferometric modulator with charge injection control 有权
标题翻译：带电荷注入控制的电压偏置拉模拟干涉式调制器
公开(公告)号：US09035934B2
公开(公告)日：2015-05-19
申请号：US13462696
申请日：2012-05-02
申请人： Edward K. Chan , John H. Hong , Cheonhong Kim , Chong U. Lee , Bing Wen
发明人： Edward K. Chan , John H. Hong , Cheonhong Kim , Chong U. Lee , Bing Wen
IPC分类号： G06F3/038 , G09G5/00 , G02B26/00 , G09G3/36 , G09G3/34
CPC分类号： G02B26/001 , G09G3/3466 , G09G3/3696 , G09G2310/0248 , G09G2310/0259 , G09G2310/0272 , G09G2320/0295 , Y10T29/49117
摘要： This disclosure provides systems, methods and apparatus for driving three-terminal electromechanical systems (EMS) devices. The driving systems and methods described herein include a switched capacitor charge injection circuit that is configured to isolate a single EMS device and transfer a desired amount of charge to the isolated device such that the device can be actuated to produce a desired optical, electrical or mechanical effect. The charge injection circuit can include an operational amplifier and can be connected such that the EMS device is placed in the feedback path of the operational amplifier.
摘要翻译：本公开提供用于驱动三端子机电系统（EMS）装置的系统，方法和装置。本文描述的驱动系统和方法包括开关电容器电荷注入电路，其被配置为隔离单个EMS装置并将期望量的电荷转移到隔离装置，使得该装置可被致动以产生期望的光学，电或机械影响。电荷注入电路可以包括运算放大器并且可以被连接使得EMS装置被放置在运算放大器的反馈路径中。

3. 发明授权

US09030391B2 Systems, devices, and methods for driving an analog interferometric modulator 有权
标题翻译：用于驱动模拟干涉式调制器的系统，装置和方法
公开(公告)号：US09030391B2
公开(公告)日：2015-05-12
申请号：US13308349
申请日：2011-11-30
申请人： John H. Hong , Chong U. Lee , Cheonhong Kim , Edward K. Chan
发明人： John H. Hong , Chong U. Lee , Cheonhong Kim , Edward K. Chan
IPC分类号： G09G3/34 , G02B26/00 , G09G3/32 , G02B26/08 , G02F1/157
CPC分类号： G09G3/3233 , G02B26/00 , G02B26/001 , G02B26/007 , G02B26/0833 , G02F1/157 , G09G3/3258 , G09G3/3466 , G09G2300/0426 , G09G2300/043 , G09G2300/0452 , G09G2300/0456 , G09G2300/0469 , G09G2300/0473 , G09G2320/0285 , G09G2320/0693 , G09G2340/16
摘要： This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for accurately positioning a movable conductive layer of a reflective display element. In one aspect, an initial position of the movable conductive layer with respect to at least one or more fixed conductive layers is sensed. A charging voltage may be determined based at least in part on the initial position. The charging voltage may be applied to the movable conductive layer.
摘要翻译：本公开提供了系统，方法和装置，包括在计算机存储介质上编码的计算机程序，用于精确地定位反射显示元件的可移动导电层。在一个方面，感测可移动导电层相对于至少一个或多个固定导电层的初始位置。可以至少部分地基于初始位置来确定充电电压。充电电压可以施加到可移动导电层。

4. 发明申请

US20130135705A1 SYSTEMS, DEVICES, AND METHODS FOR DRIVING AN ANALOG INTERFEROMETRIC MODULATOR 有权
标题翻译：用于驱动模拟干涉仪调制器的系统，设备和方法
公开(公告)号：US20130135705A1
公开(公告)日：2013-05-30
申请号：US13308349
申请日：2011-11-30
申请人： John H. Hong , Chong U. Lee , Cheonhong Kim , Edward K. Chan
发明人： John H. Hong , Chong U. Lee , Cheonhong Kim , Edward K. Chan
IPC分类号： G02B26/00
CPC分类号： G09G3/3233 , G02B26/00 , G02B26/001 , G02B26/007 , G02B26/0833 , G02F1/157 , G09G3/3258 , G09G3/3466 , G09G2300/0426 , G09G2300/043 , G09G2300/0452 , G09G2300/0456 , G09G2300/0469 , G09G2300/0473 , G09G2320/0285 , G09G2320/0693 , G09G2340/16
摘要： This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for accurately positioning a movable conductive layer of a reflective display element. In one aspect, an initial position of the movable conductive layer with respect to at least one or more fixed conductive layers is sensed. A charging voltage may be determined based at least in part on the initial position. The charging voltage may be applied to the movable conductive layer.
摘要翻译：本公开提供了系统，方法和装置，包括在计算机存储介质上编码的计算机程序，用于精确地定位反射显示元件的可移动导电层。在一个方面，感测可移动导电层相对于至少一个或多个固定导电层的初始位置。可以至少部分地基于初始位置来确定充电电压。充电电压可以施加到可移动导电层。

5. 发明申请

US20140063022A1 ELECTROMECHANICAL SYSTEMS DEVICE 审中-公开
标题翻译：电子系统设备
公开(公告)号：US20140063022A1
公开(公告)日：2014-03-06
申请号：US13601226
申请日：2012-08-31
申请人： Edward K. Chan , Bing Wen , Cheonhong Kim , John H. Hong
发明人： Edward K. Chan , Bing Wen , Cheonhong Kim , John H. Hong
IPC分类号： G02B26/00 , G06T1/00 , H01L33/08
CPC分类号： G02B26/001
摘要： This disclosure provides systems, methods and apparatus for electromechanical systems devices including one or more storage capacitors. In one aspect, a device includes a substrate structure, a movable element configured to move relative to the substrate structure, and at least one switch. The movable element includes a first conductive layer and a second conductive layer that form a storage capacitor. The switch is configured to control a flow of charge between a source and the storage capacitor.
摘要翻译：本公开提供了包括一个或多个存储电容器的机电系统装置的系统，方法和装置。在一个方面，一种装置包括衬底结构，被配置为相对于衬底结构移动的可移动元件以及至少一个开关。可动元件包括形成存储电容器的第一导电层和第二导电层。开关被配置为控制源和存储电容器之间的电荷流。

6. 发明授权

US09105728B2 Multi-gate thin-film transistor 有权
标题翻译：多栅极薄膜晶体管
公开(公告)号：US09105728B2
公开(公告)日：2015-08-11
申请号：US13557039
申请日：2012-07-24
申请人： John Hyunchul Hong , Cheonhong Kim , Tze-Ching Fung
发明人： John Hyunchul Hong , Cheonhong Kim , Tze-Ching Fung
IPC分类号： H01L29/76 , H01L29/786
CPC分类号： H01L29/78645 , H01L29/78648
摘要： This disclosure provides implementations of multi-gate transistors, structures, devices, apparatus, systems, and related processes. In one aspect, a device includes a thin-film semiconducting layer arranged over a substrate. A drain and source are coupled to the semiconducting layer. The device also includes first, second and third gates all arranged adjacent the semiconducting layer and configured to receive first, second, and third control signals, respectively. Dielectric layers insulate the gates from the semiconducting layer and from one another. In a first mode, the first, second, and third gates are configured such that charge is stored in a potential well in a region of the semiconducting layer adjacent the second gate. In a second mode, the first, second and third gate electrodes are configured such that the stored charge is transferred through the region of the semiconducting layer adjacent the third gate electrode and through the source to a load.
摘要翻译：本公开提供了多栅极晶体管，结构，器件，器件，系统和相关工艺的实现。一方面，一种器件包括布置在衬底上的薄膜半导体层。漏极和源极耦合到半导体层。该器件还包括第一，第二和第三栅极，其全部布置成邻近半导体层并被配置为分别接收第一，第二和第三控制信号。电介质层将栅极与半导体层和彼此绝缘。在第一模式中，第一，第二和第三栅极被配置为使得电荷存储在邻近第二栅极的半导体层的区域中的势阱中。在第二模式中，第一，第二和第三栅电极被配置为使得存储的电荷通过与第三栅电极相邻的半导体层的区域并通过源传输到负载。

7. 发明授权

US08797303B2 Amorphous oxide semiconductor thin film transistor fabrication method 有权
标题翻译：无定形氧化物半导体薄膜晶体管制造方法
公开(公告)号：US08797303B2
公开(公告)日：2014-08-05
申请号：US13052446
申请日：2011-03-21
申请人： Cheonhong Kim , John Hyunchul Hong , Yaoling Pan
发明人： Cheonhong Kim , John Hyunchul Hong , Yaoling Pan
IPC分类号： G09G5/00 , H01L29/10 , H01L29/786 , H01L29/66 , G02B26/00
CPC分类号： H01L29/66742 , G02B26/001 , H01L29/66969 , H01L29/78618 , H01L29/78693
摘要： This disclosure provides systems, methods and apparatus for fabricating thin film transistor devices. In one aspect, a substrate having a source region, a drain region, and a channel region between the source region and the drain region is provided. The substrate also includes an oxide semiconductor layer, a first dielectric layer overlying the channel region, and a first metal layer on the dielectric layer. A second metal layer is formed on the oxide semiconductor layer overlying the source region and the drain region. The oxide semiconductor layer and the second metal layer are treated to form a heavily doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source region and the drain region. An oxide in the second metal layer also can be formed.
摘要翻译：本公开提供了用于制造薄膜晶体管器件的系统，方法和装置。一方面，提供了在源极区域和漏极区域之间具有源极区域，漏极区域和沟道区域的衬底。衬底还包括氧化物半导体层，覆盖沟道区的第一介电层和介电层上的第一金属层。在覆盖源极区域和漏极区域的氧化物半导体层上形成第二金属层。处理氧化物半导体层和第二金属层以在覆盖源极区和漏极区的氧化物半导体层中形成重掺杂的n型氧化物半导体。也可以形成第二金属层中的氧化物。

8. 发明授权

US09379254B2 Amorphous oxide semiconductor thin film transistor fabrication method 有权
标题翻译：无定形氧化物半导体薄膜晶体管制造方法
公开(公告)号：US09379254B2
公开(公告)日：2016-06-28
申请号：US13299780
申请日：2011-11-18
申请人： Cheonhong Kim , Tallis Young Chang , John Hyunchul Hong
发明人： Cheonhong Kim , Tallis Young Chang , John Hyunchul Hong
IPC分类号： H01L29/10 , H01L29/786 , H01L29/66
CPC分类号： H01L29/78693 , H01L29/66969 , H01L29/78618
摘要： This disclosure provides systems, methods and apparatus for fabricating thin film transistor (TFT) devices. In one aspect, a substrate having a source area, a drain area, and a channel area is provided. Metal cations are implanted in the oxide semiconductor layer overlying the source area and the drain area of the substrate. The metal cation implantation forms a doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source area and the drain area of the substrate.
摘要翻译：本公开提供了用于制造薄膜晶体管（TFT）器件的系统，方法和装置。一方面，提供了具有源极区域，漏极区域和沟道区域的衬底。将金属阳离子注入覆盖衬底的源极区域和漏极区域的氧化物半导体层中。金属阳离子注入在覆盖衬底的源极区和漏极区的氧化物半导体层中形成掺杂的n型氧化物半导体。

9. 发明申请

US20140027758A1 MULTI-GATE THIN-FILM TRANSISTOR 有权
标题翻译：多栅极薄膜晶体管
公开(公告)号：US20140027758A1
公开(公告)日：2014-01-30
申请号：US13557039
申请日：2012-07-24
申请人： John Hyunchul Hong , Cheonhong Kim , Tze-Ching Fung
发明人： John Hyunchul Hong , Cheonhong Kim , Tze-Ching Fung
IPC分类号： H01L29/22 , H01L29/786
CPC分类号： H01L29/78645 , H01L29/78648
摘要： This disclosure provides implementations of multi-gate transistors, structures, devices, apparatus, systems, and related processes. In one aspect, a device includes a thin-film semiconducting layer arranged over a substrate. A drain and source are coupled to the semiconducting layer. The device also includes first, second and third gates all arranged adjacent the semiconducting layer and configured to receive first, second, and third control signals, respectively. Dielectric layers insulate the gates from the semiconducting layer and from one another. In a first mode, the first, second, and third gates are configured such that charge is stored in a potential well in a region of the semiconducting layer adjacent the second gate. In a second mode, the first, second and third gate electrodes are configured such that the stored charge is transferred through the region of the semiconducting layer adjacent the third gate electrode and through the source to a load.
摘要翻译：本公开提供了多栅极晶体管，结构，器件，器件，系统和相关工艺的实现。一方面，一种器件包括布置在衬底上的薄膜半导体层。漏极和源极耦合到半导体层。该器件还包括第一，第二和第三栅极，其全部布置成邻近半导体层并被配置为分别接收第一，第二和第三控制信号。电介质层将栅极与半导体层和彼此绝缘。在第一模式中，第一，第二和第三栅极被配置为使得电荷存储在邻近第二栅极的半导体层的区域中的势阱中。在第二模式中，第一，第二和第三栅电极被配置为使得存储的电荷通过邻近第三栅电极的半导体层的区域并且通过源传输到负载。

10. 发明申请

US20120242627A1 AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR FABRICATION METHOD 有权
标题翻译：非晶氧化物半导体薄膜晶体管制造方法
公开(公告)号：US20120242627A1
公开(公告)日：2012-09-27
申请号：US13052446
申请日：2011-03-21
申请人： Cheonhong Kim , John Hyunchul Hong , Yaoling Pan
发明人： Cheonhong Kim , John Hyunchul Hong , Yaoling Pan
IPC分类号： G06F3/038 , H01L29/24 , H01L29/04 , H01L21/385
CPC分类号： H01L29/66742 , G02B26/001 , H01L29/66969 , H01L29/78618 , H01L29/78693
摘要： This disclosure provides systems, methods and apparatus for fabricating thin film transistor devices. In one aspect, a substrate having a source region, a drain region, and a channel region between the source region and the drain region is provided. The substrate also includes an oxide semiconductor layer, a first dielectric layer overlying the channel region, and a first metal layer on the dielectric layer. A second metal layer is formed on the oxide semiconductor layer overlying the source region and the drain region. The oxide semiconductor layer and the second metal layer are treated to form a heavily doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source region and the drain region. An oxide in the second metal layer also can be formed.
摘要翻译：本公开提供了用于制造薄膜晶体管器件的系统，方法和装置。一方面，提供了在源极区域和漏极区域之间具有源极区域，漏极区域和沟道区域的衬底。衬底还包括氧化物半导体层，覆盖沟道区的第一介电层和介电层上的第一金属层。在覆盖源极区域和漏极区域的氧化物半导体层上形成第二金属层。处理氧化物半导体层和第二金属层以在覆盖源极区和漏极区的氧化物半导体层中形成重掺杂的n型氧化物半导体。也可以形成第二金属层中的氧化物。

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