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1. 发明申请

US20070275565A1 FULL REMOVAL OF DUAL DAMASCENE METAL LEVEL 审中-公开
标题翻译：全面去除双金山金属含量
公开(公告)号：US20070275565A1
公开(公告)日：2007-11-29
申请号：US11838942
申请日：2007-08-15
申请人： Edward Cooney , Robert Geffken , Vincent McGahay , William Motsiff , Mark Murray , Amanda Piper , Anthony Stamper , David Thomas , Elizabeth Webster
发明人： Edward Cooney , Robert Geffken , Vincent McGahay , William Motsiff , Mark Murray , Amanda Piper , Anthony Stamper , David Thomas , Elizabeth Webster
IPC分类号： H01L21/311
CPC分类号： H01L23/53238 , H01L21/31116 , H01L21/32136 , H01L21/76838 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method and structure for semiconductor structure includes a plurality of adjacent wiring levels, conductors within each of the wiring levels, and liners at least partially surrounding each of the conductors. The liners of adjacent wiring levels are made of different materials which have different etching characteristics and are selectively etchable with respect to one another. The liners can be tantalum, tungsten, etc. The liners surround at least three sides of the conductors. Each of the wiring levels has a first insulator layer which has a first dielectric material. The liners and the conductors are positioned within the first dielectric material. A second insulator layer has a second dielectric material over the first insulator layer. The first dielectric material has a lower dielectric constant than the second dielectric material. The first dielectric material can be silicon dioxide, fluorinated silicon dioxide (FSD), microporous glasses, etc. The second dielectric material can be one of nitrides, oxides, tantalum, tungsten, etc.
摘要翻译：用于半导体结构的方法和结构包括多个相邻布线层，每个布线层内的导体和至少部分地围绕每个导体的衬垫。相邻布线层的衬垫由具有不同蚀刻特性并且可相对于彼此选择性地蚀刻的不同材料制成。衬垫可以是钽，钨等。衬里围绕导体的至少三个侧面。每个布线层具有第一绝缘体层，其具有第一介电材料。衬垫和导体位于第一介电材料内。第二绝缘体层在第一绝缘体层上具有第二电介质材料。第一电介质材料具有比第二电介质材料低的介电常数。第一介电材料可以是二氧化硅，氟化二氧化硅（FSD），微孔玻璃等。第二介电材料可以是氮化物，氧化物，钽，钨等中的一种。

2. 发明申请

US20060051959A1 DUAL SILICIDE VIA CONTACT STRUCTURE AND PROCESS 有权
标题翻译：双硅胶通过接触结构和工艺
公开(公告)号：US20060051959A1
公开(公告)日：2006-03-09
申请号：US10711298
申请日：2004-09-09
申请人： Michael Iwatake , Kevin Mello , Matthew Oonk , Amanda Piper , Yun Wang , Keith Wong
发明人： Michael Iwatake , Kevin Mello , Matthew Oonk , Amanda Piper , Yun Wang , Keith Wong
IPC分类号： H01L21/4763
CPC分类号： H01L21/28518 , H01L21/76877
摘要： A via contact is provided to a diffusion region at a top surface of a substrate which includes a single-crystal semiconductor region. The via contact includes a first layer which consists essentially of a silicide of a first metal in contact with the diffusion region at the top surface. A dielectric region overlies the first layer, the dielectric region having an outer surface and an opening extending from the outer surface to the top surface of the substrate. A second layer lines the opening and contacts the top surface of the substrate in the opening, the second layer including a second metal which lines a sidewall of the opening and a silicide of the second metal which is self-aligned to the top surface of the substrate in the opening. A diffusion barrier layer overlies the second layer within the opening. A third layer including a third metal overlies the diffusion barrier layer and fills the opening.
摘要翻译：通孔接触被提供到包括单晶半导体区域的衬底的顶表面处的扩散区域。通孔接触包括第一层，其基本上由与顶表面上的扩散区接触的第一金属的硅化物组成。电介质区域覆盖在第一层上，电介质区域具有外表面和从衬底的外表面延伸到顶表面的开口。第二层将开口划线并与开口中的基板的顶表面接触，第二层包括将开口的侧壁排列的第二金属和与第二金属的顶表面自对准的第二金属的硅化物基材在开口处。扩散阻挡层覆盖开口内的第二层。包括第三金属的第三层覆盖扩散阻挡层并填充开口。

3. 发明申请

US20070077753A1 Fabrication of via contacts having dual silicide layers 审中-公开
标题翻译：具有双重硅化物层的通孔触点的制造
公开(公告)号：US20070077753A1
公开(公告)日：2007-04-05
申请号：US11633299
申请日：2006-12-04
申请人： Michael Iwatake , Kevin Mello , Matthew Oonk , Amanda Piper , Yun Wang , Keith Wong
发明人： Michael Iwatake , Kevin Mello , Matthew Oonk , Amanda Piper , Yun Wang , Keith Wong
IPC分类号： H01L21/4763
CPC分类号： H01L21/28518 , H01L21/76877
摘要： A method is provided for fabricating a via contact structure contacting a single-crystal semiconductor diffusion region at a top surface of a substrate. In such method, a first layer is formed in contact with the diffusion region at the top surface, the first layer consisting essentially of a silicide of a first metal. A dielectric region is formed to overlie the first layer. An opening is etched in the dielectric region extending through the first layer to the diffusion region. A second layer is formed to line the opening, the second layer including a second metal. Thereafter, a conductor is deposited within the opening over the second layer, and the substrate is heated to cause the second metal to form a silicide at the top surface.
摘要翻译：提供了一种用于制造在衬底的顶表面处接触单晶半导体扩散区的通孔接触结构的方法。在这种方法中，第一层形成为与顶表面处的扩散区接触，第一层基本上由第一金属的硅化物组成。形成介电区以覆盖第一层。在延伸穿过第一层的电介质区域中蚀刻开口到扩散区域。形成第二层以对开口进行排列，第二层包括第二金属。此后，在第二层的开口内沉积导体，并且加热衬底以使第二金属在顶表面形成硅化物。

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