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1. 发明授权

US08361546B2 Facilitating adhesion between substrate and patterned layer 有权
标题翻译：促进基材和图案层之间的粘附
公开(公告)号：US08361546B2
公开(公告)日：2013-01-29
申请号：US12606588
申请日：2009-10-27
申请人： Edward B. Fletcher , Zhengmao Ye , Dwayne L. LaBrake , Frank Y. Xu
发明人： Edward B. Fletcher , Zhengmao Ye , Dwayne L. LaBrake , Frank Y. Xu
IPC分类号： B05D5/10
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01J37/32431 , Y10T428/30 , Y10T428/31663
摘要： Systems and methods for adhering a substrate to a patterned layer are described. Included are in situ cleaning and conditioning of the substrate, and the application of an adhesion layer between the substrate and the patterned layer, as well as forming an intermediate layer between adhesion materials and the substrate.
摘要翻译：描述了将基板粘合到图案层上的系统和方法。包括基材的原位清洁和调理，以及在基材和图案化层之间施加粘合层，以及在粘合材料和基材之间形成中间层。

2. 发明申请

US20100112236A1 Facilitating Adhesion Between Substrate and Patterned Layer 有权
标题翻译：促进底物和图案层之间的粘附
公开(公告)号：US20100112236A1
公开(公告)日：2010-05-06
申请号：US12606588
申请日：2009-10-27
申请人： Edward B. Fletcher , Zhengmao Ye , Dwayne L. LaBrake , Frank Y. Xu
发明人： Edward B. Fletcher , Zhengmao Ye , Dwayne L. LaBrake , Frank Y. Xu
IPC分类号： B05D5/10 , H05H1/24
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01J37/32431 , Y10T428/30 , Y10T428/31663
摘要： Systems and methods for adhering a substrate to a patterned layer are described. Included are in situ cleaning and conditioning of the substrate, and the application of an adhesion layer between the substrate and the patterned layer, as well as forming an intermediate layer between adhesion materials and the substrate.
摘要翻译：描述了将基板粘合到图案层上的系统和方法。包括基材的原位清洁和调理，以及在基材和图案化层之间施加粘合层，以及在粘合材料和基材之间形成中间层。

3. 发明申请

US20110165412A1 ADHESION LAYERS IN NANOIMPRINT LITHOGRAHY 审中-公开
标题翻译： NANOIMPRINT LITHOGRAHY中的粘合层
公开(公告)号：US20110165412A1
公开(公告)日：2011-07-07
申请号：US12954376
申请日：2010-11-24
申请人： Zhengmao Ye , Frank Y. Xu , Dwayne L. LaBrake , Kosta S. Selinidis
发明人： Zhengmao Ye , Frank Y. Xu , Dwayne L. LaBrake , Kosta S. Selinidis
IPC分类号： B32B7/12 , B05D5/10 , B05D3/12
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10T428/265
摘要： Forming an adhesive layer on a nanoimprint lithography template or a double-sided disk. Forming the adhesive layer on the double-sided disk includes immersing the double-sided disk in a liquid adhesive composition and removing the double-sided disk from the adhesive composition. The outer layer of the double-sided disk is a carbon overcoating or an intermediate layer. The adhesive composition is dried to form a first adhesion layer adhered directly to the carbon overcoating or intermediate layer on a first side of the disk and a second adhesion layer adhered directly to the carbon overcoating or intermediate layer on a second side of the disk. Forming the adhesive layer on the nanoimprint lithography template includes applying an adhesive material to the template, allowing the template to remain motionless, and rinsing a portion of the adhesive material from the template with a solvent, and drying the template.
摘要翻译：在纳米压印光刻模板或双面盘上形成粘合剂层。在双面盘上形成粘合剂层包括将双面盘浸入液体粘合剂组合物中并从粘合剂组合物中除去双面盘。双面盘的外层是碳外涂层或中间层。将粘合剂组合物干燥以形成直接附着在盘的第一侧上的碳外涂层或中间层的第一粘合层，以及直接粘附在盘的第二侧上的碳外涂层或中间层的第二粘附层。在纳米压印光刻模板上形成粘合剂层包括将粘合剂材料施加到模板上，允许模板保持静止，并用溶剂从模板中漂洗一部分粘合剂材料，并干燥模板。

4. 发明授权

US08529778B2 Large area patterning of nano-sized shapes 有权
标题翻译：纳米尺寸形状的大面积图案
公开(公告)号：US08529778B2
公开(公告)日：2013-09-10
申请号：US12616896
申请日：2009-11-12
申请人： Sidlgata V. Sreenivasan , Shuqiang Yang , Frank Y. Xu , Dwayne L. LaBrake
发明人： Sidlgata V. Sreenivasan , Shuqiang Yang , Frank Y. Xu , Dwayne L. LaBrake
IPC分类号： B44C1/22
CPC分类号： G03F7/0035 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： Methods for creating nano-shaped patterns are described. This approach may be used to directly pattern substrates and/or create imprint lithography molds that may be subsequently used to directly replicate nano-shaped patterns into other substrates in a high throughput process.
摘要翻译：描述了形成纳米形图案的方法。该方法可以用于直接图案化基底和/或产生压印光刻模具，其可以随后用于在高通量过程中将纳米形图案直接复制到其它基底中。

5. 发明申请

US20120187085A1 CRITICAL DIMENSION CONTROL DURING TEMPLATE FORMATION 有权
标题翻译：模式形成过程中的关键尺寸控制
公开(公告)号：US20120187085A1
公开(公告)日：2012-07-26
申请号：US13441500
申请日：2012-04-06
申请人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
发明人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
IPC分类号： B44C1/22
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.
摘要翻译：可以改变残余层的厚度以控制由压印光刻工艺提供的图案化层中的特征的临界尺寸。残余层的厚度可以与特征的临界尺寸成正比或成反比。分配技术和材料选择也可以提供图案化层中特征的临界尺寸的控制。

6. 发明授权

US08545709B2 Critical dimension control during template formation 有权
标题翻译：模板形成过程中的关键尺寸控制
公开(公告)号：US08545709B2
公开(公告)日：2013-10-01
申请号：US13441500
申请日：2012-04-06
申请人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
发明人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
IPC分类号： C03C15/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.
摘要翻译：可以改变残余层的厚度以控制由压印光刻工艺提供的图案化层中的特征的临界尺寸。残余层的厚度可以与特征的临界尺寸成正比或成反比。分配技术和材料选择也可以提供图案化层中特征的临界尺寸的控制。

7. 发明申请

US20100120251A1 Large Area Patterning of Nano-Sized Shapes 有权
标题翻译：纳米尺寸形状的大面积图案
公开(公告)号：US20100120251A1
公开(公告)日：2010-05-13
申请号：US12616896
申请日：2009-11-12
申请人： Sidlgata V. Sreenivasan , Shuqiang Yang , Frank Y. Xu , Dwayne L. LaBrake
发明人： Sidlgata V. Sreenivasan , Shuqiang Yang , Frank Y. Xu , Dwayne L. LaBrake
IPC分类号： H01L21/302
CPC分类号： G03F7/0035 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： Methods for creating nano-shaped patterns are described. This approach may be used to directly pattern substrates and/or create imprint lithography molds that may be subsequently used to directly replicate nano-shaped patterns into other substrates in a high throughput process.
摘要翻译：描述了形成纳米形图案的方法。该方法可以用于直接图案化基底和/或产生压印光刻模具，其可以随后用于在高通量过程中将纳米形图案直接复制到其它基底中。

8. 发明申请

US20090053535A1 Reduced Residual Formation in Etched Multi-Layer Stacks 审中-公开
标题翻译：蚀刻多层堆叠中残留形成的减少
公开(公告)号：US20090053535A1
公开(公告)日：2009-02-26
申请号：US12196959
申请日：2008-08-22
申请人： Frank Y. Xu , Weijun Liu , Cynthia B. Brooks , Dwayne L. LaBrake , David J. Lentz
发明人： Frank Y. Xu , Weijun Liu , Cynthia B. Brooks , Dwayne L. LaBrake , David J. Lentz
IPC分类号： B32B27/00 , C08F2/46 , B05D3/00 , B44C1/22
CPC分类号： G03F7/027 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10T428/24612
摘要： A multi-layer stack for imprint lithography is formed by applying a first polymerizable composition to a substrate, polymerizing the first polymerizable composition to form a first polymerized layer, applying a second polymerizable composition to the first polymerized layer, and polymerizing the second polymerizable composition to form a second polymerized layer on the first polymerized layer. The first polymerizable composition includes a polymerizable component with a glass transition temperature less than about 25° C., and the first polymerized layer is substantially impermeable to the second polymerizable composition.
摘要翻译：通过将第一可聚合组合物施加到基底上，聚合第一可聚合组合物以形成第一聚合层，向第一聚合层施加第二可聚合组合物，并将第二可聚合组合物聚合成在第一聚合层上形成第二聚合层。第一可聚合组合物包括玻璃化转变温度低于约25℃的可聚合组分，并且第一聚合层对于第二可聚合组合物基本上是不可渗透的。

9. 发明申请

US20090212012A1 CRITICAL DIMENSION CONTROL DURING TEMPLATE FORMATION 审中-公开
标题翻译：模式形成过程中的关键尺寸控制
公开(公告)号：US20090212012A1
公开(公告)日：2009-08-27
申请号：US12392685
申请日：2009-02-25
申请人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
发明人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
IPC分类号： B44C1/22 , B29C39/10
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.
摘要翻译：可以改变残余层的厚度以控制由压印光刻工艺提供的图案化层中的特征的临界尺寸。残余层的厚度可以与特征的临界尺寸成正比或成反比。分配技术和材料选择也可以提供图案化层中特征的临界尺寸的控制。

10. 发明申请

US20120288686A1 REDUCED RESIDUAL FORMATION IN ETCHED MULTI-LAYER STACKS 审中-公开
标题翻译：在多层堆叠中减少残留形成
公开(公告)号：US20120288686A1
公开(公告)日：2012-11-15
申请号：US13546622
申请日：2012-07-11
申请人： Frank Y. Xu , Weijun Liu , Cynthia B. Brooks , Dwayne L. LaBrake , David J. Lentz
发明人： Frank Y. Xu , Weijun Liu , Cynthia B. Brooks , Dwayne L. LaBrake , David J. Lentz
IPC分类号： B32B3/30 , B05D3/10 , B05D1/38 , C08F236/20 , B32B27/08
CPC分类号： G03F7/027 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10T428/24612
摘要： A multi-layer stack for imprint lithography is formed by applying a first polymerizable composition to a substrate, polymerizing the first polymerizable composition to form a first polymerized layer, applying a second polymerizable composition to the first polymerized layer, and polymerizing the second polymerizable composition to form a second polymerized layer on the first polymerized layer. The first polymerizable composition includes a polymerizable component with a glass transition temperature less than about 25° C., and the first polymerized layer is substantially impermeable to the second polymerizable composition.
摘要翻译：通过将第一可聚合组合物施加到基底上，聚合第一可聚合组合物以形成第一聚合层，向第一聚合层施加第二可聚合组合物，并将第二可聚合组合物聚合成在第一聚合层上形成第二聚合层。第一可聚合组合物包括玻璃化转变温度低于约25℃的可聚合组分，并且第一聚合层对于第二可聚合组合物基本上是不可渗透的。

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