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1. 发明公开

US20230215998A1 LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：US20230215998A1
公开(公告)日：2023-07-06
申请号：US18089727
申请日：2022-12-28
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing CHEN , Meng-Hsiang HONG , Chi-Shiang HSU , Yen-Liang KUO , Chien-Ya HUNG , Yong-Yang CHEN , Yu-Ling LIN , Xue-Cheng YAO
IPC分类号： H01L33/60 , H01L33/20 , H01L33/44 , H01L33/40 , H01L33/38
CPC分类号： H01L33/60 , H01L33/20 , H01L33/44 , H01L33/405 , H01L33/38 , H01L33/32
摘要： A light-emitting device includes a semiconductor stack, first and second insulative layers, a reflective conductive structure, and first and second pads. The semiconductor stack includes a first semiconductor layer, and a mesa having an active region having a second semiconductor layer and formed on the first semiconductor layer. The first insulative layer is formed on the semiconductor stack and has first openings. The reflective conductive structure is formed on the first insulative layer and is electrically connected to the second semiconductor layer through the first openings. The second insulative layer is formed on the reflective conductive structure and includes second openings and a contact area covering portions overlapped with the first and second openings. A first pad is formed on the second insulative layer and electrically connected to the first semiconductor layer. A second pad formed on the second insulative layer and electrically connected to the second semiconductor layer.

2. 发明申请

US20170141260A1 LIGHT-EMITTING DEVICE 有权
公开(公告)号：US20170141260A1
公开(公告)日：2017-05-18
申请号：US15350893
申请日：2016-11-14
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Bo-Jiun HU , Tsung-Hsun CHIANG , Wen-Hung CHUANG , Kuan-Yi LEE , Yu-Ling LIN , Chien-Fu SHEN , Tsun-Kai KO
IPC分类号： H01L33/00 , H01L33/06 , H01L33/32 , H01L33/62 , H01L33/46
CPC分类号： H01L33/46 , H01L33/38 , H01L33/382 , H01L33/405
摘要： A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

3. 发明公开

US20240339564A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20240339564A1
公开(公告)日：2024-10-10
申请号：US18625617
申请日：2024-04-03
申请人： EPISTAR CORPORATION
发明人： Wei-Che WU , Chih-Hao CHEN , Yu-Ling LIN , Chao-Hsing CHEN , Yong-Yang CHEN
IPC分类号： H01L33/22 , H01L33/00 , H01L33/60
CPC分类号： H01L33/22 , H01L33/005 , H01L33/60
摘要： A semiconductor device includes a semiconductor stack; a substrate formed on the semiconductor stack, including a lower surface connected to the semiconductor stack, an upper surface opposite to the lower surface, and a side surface between the lower surface and the upper surface, wherein the side surface includes a mirror area, a first scribing area, and a first crack area, the mirror area is closer to the lower surface than the first scribing area to the lower surface, and the first scribing area is located between the mirror area and the first crack area; an optical structure on the upper surface of the substrate; and a reflective structure on a side surface of the first scribing area and the first crack area, wherein the first scribing area is arranged below the upper surface of the substrate with a distance less than or equal to ¼ of a thickness of the substrate.

4. 发明公开

US20230238488A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：US20230238488A1
公开(公告)日：2023-07-27
申请号：US18118488
申请日：2023-03-07
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Tsung-Hsun CHIANG , Bo-Jiun HU , Wen-Hung CHUANG , Yu-Ling LIN
IPC分类号： H01L33/38 , H01L33/00 , H01L33/10 , H01L33/24 , H01L33/42 , H01L33/46 , H01L33/62
CPC分类号： H01L33/382 , H01L33/00 , H01L33/10 , H01L33/24 , H01L33/385 , H01L33/387 , H01L33/42 , H01L33/46 , H01L33/62 , H01L33/0012 , H01L33/02
摘要： A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

5. 发明申请

US20210313388A1 LIGHT-EMITTING DEVICE 有权
公开(公告)号：US20210313388A1
公开(公告)日：2021-10-07
申请号：US17348080
申请日：2021-06-15
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing CHEN , I-Lun MA , Bo-Jiun HU , Yu-Ling LIN , Chien-Chih LIAO
IPC分类号： H01L27/15 , H01L33/24 , H01L33/38
摘要： A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first light-emitting unit and connected to the first semiconductor layer formed in the first opening, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.

6. 发明申请

US20210210659A1 LIGHT-EMITTING DEVICE 有权
公开(公告)号：US20210210659A1
公开(公告)日：2021-07-08
申请号：US17206647
申请日：2021-03-19
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Bo-Jiun HU , Tsung-Hsun CHIANG , Wen-Hung CHUANG , Kuan-Yi LEE , Yu-Ling LIN , Chien-Fu SHEN , Tsun-Kai KO
IPC分类号： H01L33/46 , H01L33/38
摘要： A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.

7. 发明公开

US20240234635A9 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：US20240234635A9
公开(公告)日：2024-07-11
申请号：US18401106
申请日：2023-12-29
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Tsung-Hsun CHIANG , Bo-Jiun HU , Wen-Hung CHUANG , Yu-Ling LIN
IPC分类号： H01L33/38 , H01L33/00 , H01L33/10 , H01L33/24 , H01L33/42 , H01L33/46 , H01L33/62
CPC分类号： H01L33/382 , H01L33/00 , H01L33/10 , H01L33/24 , H01L33/385 , H01L33/387 , H01L33/42 , H01L33/46 , H01L33/62 , H01L33/0012 , H01L33/02
摘要： A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

8. 发明公开

US20230261148A1 LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：US20230261148A1
公开(公告)日：2023-08-17
申请号：US18136921
申请日：2023-04-20
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Bo-Jiun HU , Tsung-Hsun CHIANG , Wen-Hung CHUANG , Kuan-Yi LEE , Yu-Ling LIN , Chien-Fu SHEN , Tsun-Kai KO
IPC分类号： H01L33/46 , H01L33/38
CPC分类号： H01L33/46 , H01L33/382 , H01L33/38 , H01L33/405
摘要： A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.

9. 发明申请

US20170005232A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20170005232A1
公开(公告)日：2017-01-05
申请号：US15265069
申请日：2016-09-14
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Tsung-Hsun CHIANG , Bo-Jiun HU , Wen-Hung CHUANG , Yu-Ling LIN
IPC分类号： H01L33/38 , H01L33/62 , H01L33/46
CPC分类号： H01L33/382 , H01L33/0012 , H01L33/08 , H01L33/22 , H01L33/38 , H01L33/387 , H01L33/46 , H01L33/62 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.
摘要翻译：半导体发光器件包括：包括第一半导体层，第二半导体层和有源层的半导体堆叠; 穿过所述第二半导体层和所述有源层的多个第一沟槽以暴露所述第一半导体层; 穿过所述第二半导体层和所述有源层以暴露所述第一半导体层的第二沟槽，其中所述第二沟槽设置在所述有源层的最外边缘附近，并且包围所述有源层和所述多个第一沟槽; 形成在所述第二半导体层上并形成在所述多个第一沟槽或所述第二沟槽之一中的图案化金属层; 以及分别形成在所述第二半导体层上并分别电连接所述第二半导体层和所述第一半导体层的第一焊盘部分和第二焊盘部分。

10. 发明公开

US20240136472A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：US20240136472A1
公开(公告)日：2024-04-25
申请号：US18401106
申请日：2023-12-29
申请人： EPISTAR CORPORATION
发明人： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Tsung-Hsun CHIANG , Bo-Jiun HU , Wen-Hung CHUANG , Yu-Ling LIN
IPC分类号： H01L33/38 , H01L33/00 , H01L33/10 , H01L33/24 , H01L33/42 , H01L33/46 , H01L33/62
CPC分类号： H01L33/382 , H01L33/00 , H01L33/10 , H01L33/24 , H01L33/385 , H01L33/387 , H01L33/42 , H01L33/46 , H01L33/62 , H01L33/0012 , H01L33/02
摘要： A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

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