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1. 发明授权

US10014441B2 Light-emitting device 有权
公开(公告)号：US10014441B2
公开(公告)日：2018-07-03
申请号：US14579807
申请日：2014-12-22
申请人： EPISTAR CORPORATION
发明人： Shih-I Chen , Wei-Yu Chen , Yi-Ming Chen , Ching-Pei Lin , Tsung-Xian Lee
IPC分类号： H01L33/00 , H01L33/42 , H01L33/38
CPC分类号： H01L33/42 , H01L33/382 , H01L2924/00 , H01L2924/0002
摘要： Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first conductivity type semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second conductivity type semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

2. 发明授权

US09255666B2 Illumination apparatus 有权
标题翻译：照明装置
公开(公告)号：US09255666B2
公开(公告)日：2016-02-09
申请号：US13631510
申请日：2012-09-28
申请人： EPISTAR CORPORATION
发明人： Chiu-Lin Yao , Been-Yu Liaw , Chih-Ming Wang , Ming-Chi Hsu , Yi-Jui Huang , Tsung-Xian Lee , Kuang-Ping Chao , Jhih-Sian Wang , Min-hsun Hsieh , Chien-Liang Liu
IPC分类号： F21V9/16 , F21K99/00 , F21V3/04 , F21Y101/02
CPC分类号： F21K9/135 , F21K9/232 , F21K9/60 , F21K9/61 , F21K9/64 , F21V3/049 , F21V3/062 , F21Y2115/10
摘要： This disclosure discloses an illumination apparatus. The illumination apparatus comprises an inner cover comprising a top surface having a first length; a pedestal on which the inner cover is disposed comprising a top surface having a second length; and a holder supporting the pedestal; wherein the first length is greater than the second length.
摘要翻译：本公开公开了一种照明装置。照明装置包括内盖，其包括具有第一长度的顶表面; 其中所述内盖设置在其上的基座包括具有第二长度的顶表面; 和支撑台座的支架; 其中所述第一长度大于所述第二长度。

3. 发明授权

US11165000B2 Light-emitting apparatus 有权
公开(公告)号：US11165000B2
公开(公告)日：2021-11-02
申请号：US16895807
申请日：2020-06-08
申请人： EPISTAR CORPORATION
发明人： Tsung-Xian Lee , Jian-Fong Jhou , Yun-Jie Huang , Bo-Song Chen
IPC分类号： H01L33/50 , G02F1/1335
摘要： A light-emitting apparatus includes a first light-emitting device, a second light-emitting device, separated from the first light-emitting device by a first distance, a diffusion layer, covering the first light-emitting device and the second light-emitting device, a prism layer, disposed on the diffusion layer and an LCD module, disposed on the prism layer. The first light-emitting device includes a light-field with a radius on the LCD module and the radius is two or more times larger than the first distance.

4. 发明授权

US10529898B2 Optoelectronic element 有权
公开(公告)号：US10529898B2
公开(公告)日：2020-01-07
申请号：US15678885
申请日：2017-08-16
申请人： Epistar Corporation
发明人： Cheng-Nan Han , Tsung-Xian Lee , Min-Hsun Hsieh , Hung-Hsuan Chen , Hsin-Mao Liu , Hsing-Chao Chen , Ching San Tao , Chih-Peng Ni , Tzer-Perng Chen , Jen-Chau Wu , Masafumi Sano , Chih-Ming Wang
IPC分类号： H01L33/50 , H01L33/58 , H01L33/62 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/54 , H01L33/64
摘要： An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.

5. 发明授权

US09893244B2 Optoelectronic element 有权
公开(公告)号：US09893244B2
公开(公告)日：2018-02-13
申请号：US14858477
申请日：2015-09-18
申请人： EPISTAR CORPORATION
发明人： Cheng-Nan Han , Tsung-Xian Lee , Min-Hsun Hsieh , Hung-Hsuan Chen , Hsin-Mao Liu , Hsing-Chao Chen , Ching San Tao , Chih-Peng Ni , Tzer-Perng Chen , Jen-Chau Wu , Masafumi Sano , Chih-Ming Wang
IPC分类号： H01L33/50 , H01L33/58 , H01L33/62 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/54 , H01L33/64
CPC分类号： H01L33/502 , H01L21/568 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/54 , H01L33/58 , H01L33/62 , H01L33/647 , H01L2224/04105 , H01L2224/19 , H01L2224/32245 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2224/9222 , H01L2933/005 , H01L2933/0066 , H01L2924/00014
摘要： An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.

6. 发明授权

US10686106B2 Optoelectronic element 有权
公开(公告)号：US10686106B2
公开(公告)日：2020-06-16
申请号：US15973091
申请日：2018-05-07
申请人： Epistar Corporation
发明人： Cheng-Nan Han , Tsung-Xian Lee , Min-Hsun Hsieh , Hung-Hsuan Chen , Hsin-Mao Liu , Hsing-Chao Chen , Ching-San Tao , Chih-Peng Ni , Tzer-Perng Chen , Jen-Chau Wu
IPC分类号： H01L33/58 , H01L33/38 , H01L33/46 , H01L33/44 , H01L33/20 , H01L23/00 , H01L33/48
摘要： The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.

7. 发明授权

US09845933B2 Illumination apparatus 有权
公开(公告)号：US09845933B2
公开(公告)日：2017-12-19
申请号：US14921702
申请日：2015-10-23
申请人： EPISTAR CORPORATION
发明人： Yao Chiu Lin , Been-Yu Liaw , Chih-Ming Wang , Ming-Chi Hsu , Yi-Jui Huang , Tsung-Xian Lee , Kuang-Ping Chao , Jhih-Sian Wang
IPC分类号： F21V13/08 , F21V3/04 , F21V5/00 , F21V3/02 , F21V13/02 , F21V29/70 , F21K9/23 , F21K9/232 , F21K9/60 , F21K9/61 , F21K9/64 , F21V7/00 , F21V7/22 , F21Y115/10
CPC分类号： F21V3/049 , F21K9/23 , F21K9/232 , F21K9/60 , F21K9/61 , F21K9/64 , F21V3/02 , F21V3/06 , F21V3/061 , F21V3/062 , F21V3/10 , F21V5/008 , F21V7/0016 , F21V7/22 , F21V13/02 , F21V29/70 , F21Y2115/10
摘要： This disclosure discloses an illumination apparatus. The illumination apparatus comprises a cover comprising a second portion and a first portion, and a light source disposed within the cover. An average thickness of the first portion is greater than that of the second portion.

8. 发明授权

US09087967B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US09087967B2
公开(公告)日：2015-07-21
申请号：US13856220
申请日：2013-04-03
申请人： EPISTAR CORPORATION
发明人： Shih-I Chen , Tsung-Xian Lee , Yi-Ming Chen , Wei-Yu Chen , Ching-Pei Lin , Min-Hsun Hsieh , Cheng-Nan Han , Tien-Yang Wang , Hsing-Chao Chen , Hsin-Mao Liu , Zong-Xi Chen , Tzu-Chieh Hsu , Chien-Fu Huang , Yu-Ren Peng
IPC分类号： H01L33/00 , H01L33/50 , H01L33/44 , H01L25/075
CPC分类号： H01L33/502 , H01L25/0753 , H01L33/44 , H01L33/505 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.
摘要翻译：本申请的实施方式的发光装置包括：基板; 形成在所述基板上的第一半导体发光结构，其中所述第一半导体发光结构包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在所述第一半导体层之间的第一有源层层和第二半导体层，其中第一有源层能够发射具有第一主波长的第一光; 以及形成在所述第一光的路径上的第一热敏层，其中所述第一热敏层包括随温度变化而变化的材料特性。

9. 发明授权

US08916884B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08916884B2
公开(公告)日：2014-12-23
申请号：US13851997
申请日：2013-03-28
申请人： Epistar Corporation
发明人： Shih-I Chen , Wei-Yu Chen , Yi-Ming Chen , Ching-Pei Lin , Tsung-Xian Lee
IPC分类号： H01L27/15 , H01L21/00 , H01L33/42 , H01L33/38
CPC分类号： H01L33/42 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a light-emitting device comprising: a light-emitting stack with a length and a width comprising: a first conductivity type semiconductor layer; an active layer on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer on the active layer; a conductive layer with a width greater than the width of the first conductivity type semiconductor layer and under the first conductivity type semiconductor layer, the conductive layer comprising a first overlapping portion which overlaps the first conductivity type semiconductor layer and a first extending portion which does not overlap the first conductivity type semiconductor layer; a transparent conductive layer with a width greater than the width of the second conductivity type semiconductor layer over the second conductivity type semiconductor layer, the transparent conductive layer comprising a second overlapping portion which overlaps the second conductivity type semiconductor layer and a second extending portion which does not overlap the second conductivity type semiconductor layer; a first electrode substantially joined with only the first extending portion or a part of the first extending part; and a second electrode substantially joined with only the second extending portion or a part of the second extending portion.
摘要翻译：公开了一种发光器件，包括：具有长度和宽度的发光叠层，包括：第一导电类型半导体层; 在第一导电类型半导体层上的有源层; 和有源层上的第二导电类型半导体层; 导电层，其宽度大于第一导电类型半导体层的宽度，并且在第一导电类型半导体层下方，导电层包括与第一导电类型半导体层重叠的第一重叠部分和不与第一导电类型半导体层重叠的第一延伸部分重叠第一导电类型半导体层; 透明导电层，其宽度大于第二导电类型半导体层上的第二导电类型半导体层的宽度，透明导电层包括与第二导电类型半导体层重叠的第二重叠部分和与第二导电类型半导体层重叠的第二延伸部分不与第二导电类型半导体层重叠; 第一电极，仅基本上与第一延伸部分或第一延伸部分的一部分连接; 以及仅与第二延伸部分或第二延伸部分的一部分基本上接合的第二电极。

10. 发明授权

US08796723B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08796723B2
公开(公告)日：2014-08-05
申请号：US14047778
申请日：2013-10-07
申请人： Epistar Corporation
发明人： Min-Hsun Hsieh , Chien-Yuan Wang , Tsung-Xian Lee , Chih-Ming Wang , Ming-Chi Hsu , Han-Min Wu
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/46 , H01L33/507 , H01L33/56 , H01L2933/0091
摘要： Disclosed is a light-emitting device comprising: a carrier; a light-emitting element disposed on the carrier; a first light guide layer covering the light-emitting element; a second light guide layer covering the first light guide layer; a low refractive index layer between the first light guide layer and the second light guide layer to reflect the light from the second light guide layer; and a wavelength conversion layer covering the second light guide layer; wherein the low refractive index layer has a refractive index smaller than one of the refractive indices of first light guide layer and the second light guide layer.
摘要翻译：公开了一种发光装置，包括：载体; 设置在所述载体上的发光元件; 覆盖所述发光元件的第一导光层; 覆盖所述第一导光层的第二导光层; 第一导光层和第二导光层之间的低折射率层，以反射来自第二导光层的光; 以及覆盖所述第二导光层的波长转换层; 其中所述低折射率层的折射率小于所述第一导光层和所述第二导光层的折射率之一。

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