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1. 发明申请

US20150054034A1 HIGH ELECTRON MOBILITY TRANSISTOR 有权
标题翻译：高电子移动晶体管
公开(公告)号：US20150054034A1
公开(公告)日：2015-02-26
申请号：US14328241
申请日：2014-07-10
申请人： EPISTAR CORPORATION , HUGA OPTOTECH INC.
发明人： Hsien-Chin CHIU , Chien-Kai TUNG , Heng-Kuang LIN , Chih-Wei YANG , Hsiang-Chun WANG
IPC分类号： H01L29/778
CPC分类号： H01L29/7784 , H01L29/157 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42316 , H01L29/7787
摘要： A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region, and a plurality of first bridges electrically connecting the plurality of second electrodes. The matrix electrode structure comprises a plurality of first electrodes arranged on the epitaxial stack and a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes. One of the bridges is arranged between two of the second electrodes and crossed over one of the first electrodes.
摘要翻译：高电子迁移率晶体管包括衬底，布置在衬底上方的外延层，并且具有第一区域和围绕第一区域的第二区域，布置在第一区域中的矩阵电极结构以及电连接多个第一区域的多个第一桥的第二电极。矩阵电极结构包括布置在外延堆叠上的多个第一电极和布置在外延堆叠上并与多个第一电极相邻的多个第二电极。其中一个桥被布置在两个第二电极之间并跨过第一电极中的一个。

2. 发明申请

US20160233326A1 HIGH ELECTRON MOBILITY TRANSISTOR 有权
标题翻译：高电子移动晶体管
公开(公告)号：US20160233326A1
公开(公告)日：2016-08-11
申请号：US15133207
申请日：2016-04-19
申请人： EPISTAR CORPORATION , HUGA OPTOTECH Inc.
发明人： Hsein-chin CHIU , Chien-Kai TUNG , Heng-Kuang LIN , Chih-Wei YANG , Hsiang-Chun WANG
IPC分类号： H01L29/778 , H01L29/417 , H01L29/15 , H01L29/20 , H01L29/205
CPC分类号： H01L29/7784 , H01L29/157 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42316 , H01L29/7787
摘要： A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region. The matrix electrode comprises a plurality of first electrodes arranged on the epitaxial stack, a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes, a plurality of third electrodes arranged adjacent to the plurality of first electrodes and second electrodes. One of the plurality of first electrodes comprises a first side, a second side, a third side and a fourth side. The first side and the third side are opposite sides, and the second side and the fourth side are opposite sides. Two of the plurality of second electrodes are arranged on the first side and the third side, and two of the plurality of third electrodes are arranged on the second side and the fourth side.
摘要翻译：高电子迁移率晶体管包括衬底，布置在衬底上方并且具有围绕第一区域的第一区域和第二区域的外延层，布置在第一区域中的矩阵电极结构。矩阵电极包括布置在外延堆叠上的多个第一电极，布置在外延堆叠上并与多个第一电极相邻的多个第二电极，与多个第一电极和第二电极相邻布置的多个第三电极。多个第一电极中的一个包括第一侧，第二侧，第三侧和第四侧。第一侧和第三侧是相对侧，第二侧和第四侧是相对的两侧。多个第二电极中的两个布置在第一侧和第三侧上，并且多个第三电极中的两个布置在第二侧和第四侧上。

3. 发明申请

US20190051741A1 III-NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR 审中-公开
公开(公告)号：US20190051741A1
公开(公告)日：2019-02-14
申请号：US16058698
申请日：2018-08-08
申请人： EPISTAR CORPORATION
发明人： Chien-Kai TUNG , Tien Ching FENG
IPC分类号： H01L29/778 , H01L29/417 , H01L29/66
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/41775 , H01L29/42316 , H01L29/66462 , H01L29/7786
摘要： An III-nitride HEMT, including a substrate; a semiconductor epitaxial stack, formed on the substrate, including a buffer structure, a channel layer formed on the buffer structure and a barrier layer formed on the channel layer, wherein a two-dimensional electron gas is formed between the channel layer and the barrier layer; and a first electrode, a third electrode and a second electrode located in between, respectively formed on the barrier layer, wherein the semiconductor epitaxial stack includes a sheet resistance greater than 500 Ω/sq, wherein there is a first minimum space between the first electrode and the second electrode, a second minimum space between the second electrode and the third electrode, and the ratio of the first minimum space to the sum of first minimum space and the second minimum space is between 0.77 and 1, wherein the second electrode includes a length greater than or equal to 9 μm.

4. 发明申请

US20180295683A1 LED DRIVER AND ILLUMINATION SYSTEM RELATED TO THE SAME 审中-公开
公开(公告)号：US20180295683A1
公开(公告)日：2018-10-11
申请号：US15945442
申请日：2018-04-04
申请人： EPISTAR CORPORATION
发明人： Chien-Kai TUNG , Chang-Hseih WU , Min-Hsun HSIEH
IPC分类号： H05B33/08 , H02M7/00
摘要： An LED driver for driving a light-emitting device (LED) includes a bridge rectifier, a current driver, and a protection circuit. The bridge rectifier includes a rectifying diode, and the bridge rectifier receives and converts an AC input power source to a DC power source having a DC current and a DC voltage. The current driver includes a constant current source. The bridge rectifier, the current driver, and the protection circuit are connected in series, and the constant current source is used to limit the magnitude of the direct current to drive the LED. The protection circuit includes a protection unit. The protection circuit connects the current driver and the LED. The LED includes a substrate and the rectifying diode, the constant current source, and the protection unit are formed together on the substrate.

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