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    • 1. 发明授权
    • Crystallographic wet chemical etching of III-nitride material
    • III族氮化物材料的晶体湿化学蚀刻
    • US06294475B1
    • 2001-09-25
    • US09338709
    • 1999-06-23
    • E. Fred SchubertDean A. Stocker
    • E. Fred SchubertDean A. Stocker
    • H01L2120
    • H01L21/30617
    • A method of processing III-Nitride epitaxial layer system on a substrate. The process includes exposing non-c-plane surfaces of the III-nitride epitaxial layer system, for example by etching to a selected depth or cleaving, and crystallographical etching the epitaxial layer system in order to obtain crystallographic plane surfaces. In an exemplary embodiment, the III-Nitride epitaxial layer system includes GaN. In accordance with one aspect of the exemplary embodiment, the etching step includes reactive ion etching in a chlorine-based plasma, PEC etching in a KOH solution or cleaving, and the crystallographical etching step includes immersing the epitaxial layer system in a crystallographic etching chemical, such as phosphoric acid, molten KOH, KOH dissolved in ethylene glycol, sodium hydroxide dissolved in ethylene glycol, tetraethyl ammonium hydroxide, or tetramethyl ammonium hydroxide. Speaific etching planes are chosen in accordance with varying the orientation of the exposing step, the etching chemical, and the temperature at which the epitaxial layer system is etched.
    • 一种在衬底上处理III-氮化物外延层系的方法。 该工艺包括将III族氮化物外延层系统的非c面表面曝光,例如通过蚀刻至所选择的深度或切割,以及对外延层系统进行晶体刻蚀以获得晶面平面。 在示例性实施例中,III-氮化物外延层系统包括GaN。 根据示例性实施例的一个方面,蚀刻步骤包括在氯基等离子体中的反应离子蚀刻,在KOH溶液中蚀刻PEC或切割,并且晶体学蚀刻步骤包括将外延层系统浸入结晶蚀刻化学品中, 溶解在乙二醇中的磷酸,熔融的KOH,KOH,溶于乙二醇的氢氧化钠,氢氧化四乙基铵或氢氧化四甲基铵。 根据暴露步骤的方向,蚀刻化学品以及外延层系统被蚀刻的温度来选择突出的蚀刻平面。
    • 3. 发明授权
    • Feedback circuit for output control in a semiconductor X-ray detector
    • 用于半导体X射线检测器中输出控制的反馈电路
    • US07554091B2
    • 2009-06-30
    • US12023960
    • 2008-01-31
    • William E. DrummondDavid R. FahrbachJames V. HowardJames R. HyattKevin K. KimMark E. MisenheimerDean A. Stocker
    • William E. DrummondDavid R. FahrbachJames V. HowardJames R. HyattKevin K. KimMark E. MisenheimerDean A. Stocker
    • H01L27/146G01T1/24
    • G01T1/2928
    • An X-ray detector using a semiconductor detector, most preferably a Silicon Drift Detector, utilizes a field effect transistor or other voltage-controlled resistance to generate an output voltage proportional to its input charge (which is generated by the X-ray photons incident on the semiconductor detector). To keep the charge (and thus the output voltage) to an acceptable range—one wherein the relationship between output voltage and input charge is substantially proportional—a feedback circuit is provided between the output and input terminals, wherein the charge on the input terminal is depleted when the output voltage begins leaving the desired range. Preferably, this is done by a comparator which monitors the output voltage, and provides a reset signal to the input terminal when it begins moving out of range. Alternatively or additionally, the reset signal may be a pulse supplied to the input terminal from a pulse generator activated by the comparator.
    • 使用半导体检测器,最优选硅漂移检测器的X射线检测器利用场效应晶体管或其它压控电阻来产生与其输入电荷成比例的输出电压(其由入射到X射线光子的X射线光子产生) 半导体检测器)。 为了将电荷(以及因此的输出电压)保持在可接受的范围 - 其中输出电压和输入电荷之间的关系基本成比例 - 在输出端和输入端之间提供反馈电路,其中输入端上的电荷为 当输出电压开始离开所需的范围时耗尽。 优选地,这通过监视输出电压的比较器来完成,并且当其开始移动超出范围时,向输入端提供复位信号。 或者或另外,复位信号可以是从由比较器激活的脉冲发生器提供给输入端的脉冲。
    • 5. 发明授权
    • Feedback circuit for output control in a semiconductor X-ray detector
    • 用于半导体X射线检测器中输出控制的反馈电路
    • US07339175B1
    • 2008-03-04
    • US11495867
    • 2006-07-28
    • William E. DrummondDavid R. FahrbachJames V. HowardMark E. MisenheimerDean A. Stocker
    • William E. DrummondDavid R. FahrbachJames V. HowardMark E. MisenheimerDean A. Stocker
    • G01T1/24
    • G01T1/2928
    • An X-ray detector using a semiconductor detector, most preferably a Silicon Drift Detector, utilizes a field effect transistor or other voltage-controlled resistance to generate an output voltage proportional to its input charge (which is generated by the X-ray photons incident on the semiconductor detector). To keep the charge (and thus the output voltage) to an acceptable range—one wherein the relationship between output voltage and input charge is substantially proportional—a feedback circuit is provided between the output and input terminals, wherein the charge on the input terminal is depleted when the output voltage begins leaving the desired range. Preferably, this is done by a comparator which monitors the output voltage, and provides a reset signal to the input terminal when it begins moving out of range. Alternatively or additionally, the reset signal may be a pulse supplied to the input terminal from a pulse generator activated by the comparator.
    • 使用半导体检测器,最优选硅漂移检测器的X射线检测器利用场效应晶体管或其他压控电阻来产生与其输入电荷成比例的输出电压(其由入射到X射线光子的X射线光子产生) 半导体检测器)。 为了将电荷(以及因此的输出电压)保持在可接受的范围 - 其中输出电压和输入电荷之间的关系基本成比例 - 在输出端和输入端之间提供反馈电路,其中输入端上的电荷为 当输出电压开始离开所需的范围时耗尽。 优选地,这通过监视输出电压的比较器来完成,并且当其开始移动超出范围时,向输入端提供复位信号。 或者或另外,复位信号可以是从由比较器激活的脉冲发生器提供给输入端的脉冲。