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1. 发明申请

US20180323342A1 PIXEL STRUCTURE AND DISPLAY APPARATUS HAVING THE SAME 审中-公开
公开(公告)号：US20180323342A1
公开(公告)日：2018-11-08
申请号：US15815718
申请日：2017-11-17
申请人： E Ink Holdings Inc.
发明人： Xue-Hung TSAI , Wei-Tsung CHEN , Henry WANG , Po-Hsin LIN
IPC分类号： H01L33/36 , H01L27/32
CPC分类号： H01L33/36 , G09G3/3655 , G09G2300/0439 , H01L27/3244 , H01L27/3265 , H01L28/40 , H01L51/52
摘要： A pixel structure includes a substrate, a gate electrode disposed on the substrate, a capacitor electrode disposed on the substrate, a first insulation layer, an active layer disposed on the first insulation layer, a drain electrode, a source electrode and an extension electrode. The capacitor electrode is spaced apart from the gate electrode. The first insulation layer covers the gate electrode and the capacitor electrode. The first insulation layer has a recess vertically above the capacitor electrode. The drain and the source electrodes are disposed on the active layer and spaced apart from each other. The extension electrode extends from the drain electrode or the source electrode into the recess.

2. 发明申请

US20180047587A1 TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20180047587A1
公开(公告)日：2018-02-15
申请号：US15593348
申请日：2017-05-12
申请人： E Ink Holdings Inc.
发明人： Wei-Tsung CHEN , Po-Hsin LIN , Xue-Hung TSAI
IPC分类号： H01L21/385 , H01L29/786 , H01L21/4757 , H01L29/66
CPC分类号： H01L21/385 , H01L21/4757 , H01L29/66969 , H01L29/78618 , H01L29/7869
摘要： A method of manufacturing a transistor, includes: (i) forming a metal-oxide semiconductor layer over a substrate; (ii) forming a source electrode and a drain electrode on different sides of the metal-oxide semiconductor layer; (iii) forming a dielectric layer over the source electrode, the drain electrode, and the metal-oxide semiconductor layer; (iv) forming a hydrogen-containing insulating layer over the dielectric layer, in which the hydrogen-containing insulating layer has an aperture exposing a surface of the dielectric layer, and the aperture is overlapped with the metal-oxide semiconductor layer when viewed in a direction perpendicular to the surface; (v) increasing a hydrogen concentration of a portion of the metal-oxide semiconductor layer by treating the hydrogen-containing insulating layer so to form a source region and a drain region; and (vi) forming a gate electrode in the aperture.

3. 发明申请

US20130207113A1 ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE FOR AN ACTIVE ARRAY SUBSTRATE 有权
标题翻译：主动阵列基板的静电放电保护结构
公开(公告)号：US20130207113A1
公开(公告)日：2013-08-15
申请号：US13684586
申请日：2012-11-26
申请人： E Ink Holdings Inc.
发明人： Xue-Hung TSAI , Chia-Chun YEH , Henry WANG , Ted-Hong SHINN
IPC分类号： H01L29/786
CPC分类号： H01L29/786 , H01L27/0296 , H01L27/1225
摘要： Disclosed herein is an electrostatic discharge protection structure which includes a signal line, a thin-film transistor and a shunt wire. The thin-film transistor includes a gate electrode, a metal-oxide semiconductor layer, a source electrode and a drain electrode. The first metal-oxide semiconductor layer is disposed above the first gate electrode. The metal-oxide semiconductor layer has a channel region characterized in having a width/length ratio of less than 1. The source electrode is equipotentially connected to the gate electrode. The shunt wire is electrically connected to the drain electrode. When the signal line receives a voltage surge of greater than a predetermined magnitude, the voltage surge is shunted through the thin-film transistor to the shunt wire.
摘要翻译：本文公开了一种静电放电保护结构，其包括信号线，薄膜晶体管和分流导线。薄膜晶体管包括栅电极，金属氧化物半导体层，源电极和漏电极。第一金属氧化物半导体层设置在第一栅电极的上方。金属氧化物半导体层具有特征在于宽度/长度比小于1的沟道区。源电极等效连接到栅电极。分路导线电连接到漏电极。当信号线接收到大于预定幅度的电压浪涌时，电压浪涌通过薄膜晶体管分流到分流导线。

4. 发明申请

US20190115227A1 TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20190115227A1
公开(公告)日：2019-04-18
申请号：US16212603
申请日：2018-12-06
申请人： E Ink Holdings Inc.
发明人： Wei-Tsung CHEN , Po-Hsin LIN , Xue-Hung TSAI
IPC分类号： H01L21/385 , H01L29/66 , H01L29/786 , H01L21/4757
CPC分类号： H01L21/385 , H01L21/4757 , H01L29/66969 , H01L29/78618 , H01L29/7869
摘要： A method of manufacturing a transistor, includes: (i) forming a metal-oxide semiconductor layer over a substrate; (ii) forming a source electrode and a drain electrode on different sides of the metal-oxide semiconductor layer; (iii) forming a dielectric layer over the source electrode, the drain electrode, and the metal-oxide semiconductor layer; (iv) forming a hydrogen-containing insulating layer over the dielectric layer, in which the hydrogen-containing insulating layer has an aperture exposing a surface of the dielectric layer, and the aperture is overlapped with the metal-oxide semiconductor layer when viewed in a direction perpendicular to the surface; (v) increasing a hydrogen concentration of a portion of the metal-oxide semiconductor layer by treating the hydrogen-containing insulating layer so to form a source region and a drain region; and (vi) forming a gate electrode in the aperture.

5. 发明申请

US20180088397A1 DISPLAY APPARATUS AND PIXEL STRUCTURE THEREOF 审中-公开
公开(公告)号：US20180088397A1
公开(公告)日：2018-03-29
申请号：US15642351
申请日：2017-07-06
申请人： E Ink Holdings Inc.
发明人： Xue-Hung TSAI , Wei-Tsung CHEN , Henry WANG , Po-Hsin LIN
IPC分类号： G02F1/1333 , H01L27/12 , G02F1/167 , G09G3/34
CPC分类号： G02F1/133345 , G02F1/167 , G02F2001/1676 , G02F2201/123 , G02F2201/503 , G09G3/3446 , H01L27/1248 , H01L27/1288
摘要： A display apparatus includes at least one pixel structure, which includes an active device, an electric insulation layer and a pixel electrode. The electric insulation layer is disposed on the active device. The electric insulation layer has a trench and a via. The via is located on a bottom surface of the trench. A portion of the electric insulation layer surrounding the trench is monolithically connected to another portion of the electric insulation layer surrounding the via. A pixel electrode has a first electrode portion and a second electrode portion connected to each other. The first electrode portion is located in the trench. A thickness of the first electrode portion is less than a depth of the trench. The second electrode portion is located in the via and is electrically connected to the active device through the via.

6. 发明申请

US20150357475A1 METAL OXIDE THIN FILM TRANSISTOR 有权
标题翻译：金属氧化物薄膜晶体管
公开(公告)号：US20150357475A1
公开(公告)日：2015-12-10
申请号：US14825187
申请日：2015-08-13
申请人： E Ink Holdings Inc.
发明人： Chia-Chun YEH , Henry WANG , Xue-Hung TSAI , Chih-Hsuan WANG
IPC分类号： H01L29/786 , H01L29/417
CPC分类号： H01L29/41733 , H01L29/7869
摘要： A metal oxide thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a metal oxide active layer, a source electrode, and a drain electrode. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate and covers the gate electrode. The metal oxide active layer is formed on the gate insulating layer. The drain electrode and the source electrode are formed on two opposite ends of the metal oxide active layer in a spaced-apart manner, in which at least one of the orthographic projection of the source electrode and the orthographic projection of the drain electrode on the substrate does not overlap the gate electrode.
摘要翻译：金属氧化物薄膜晶体管（TFT）包括栅电极，栅极绝缘层，金属氧化物有源层，源电极和漏电极。栅电极形成在基板上。栅极绝缘层形成在基板上并覆盖栅电极。金属氧化物有源层形成在栅极绝缘层上。漏极电极和源极电极以间隔方式形成在金属氧化物有源层的两个相对端上，其中源电极的正投影和漏电极的正投影至少一个在基板上不与栅电极重叠。

7. 发明申请

US20150137091A1 ORGANIC LIGHT-EMITTING DIODE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光二极管显示装置及其制造方法
公开(公告)号：US20150137091A1
公开(公告)日：2015-05-21
申请号：US14464703
申请日：2014-08-20
申请人： E Ink Holdings Inc.
发明人： Wei-Chou LAN , Ted-Hong SHINN , Xue-Hung TSAI , Chi-Liang WU , Chih-Hsiang YANG
IPC分类号： H01L27/32 , H01L51/52 , H01L27/12 , H01L51/56
CPC分类号： H01L27/3244 , H01L27/1255 , H01L27/326 , H01L27/3276 , H01L51/5284 , H01L51/5287 , H01L51/56 , H01L2227/323
摘要： An organic light-emitting diode display device includes a substrate, a light-absorption layer, an active array structure, and an organic light-emitting diode. The substrate has a first and a second surface opposite to each other. The light-absorption layer is disposed on the first surface, and has at least one opening exposing a portion of the first surface. The active array structure is positioned on the second surface, and includes at least one data line, at least one gate line, and at least one switching device electrically connected to the gate and data lines. The light-absorption layer overlaps at least one of the data line and the gate line when viewed in a direction perpendicular to the substrate. The organic light-emitting diode is electrically connected to the switching device, and the organic light-emitting diode overlaps the opening when viewed in the direction perpendicular to the substrate.
摘要翻译：有机发光二极管显示装置包括基板，光吸收层，有源阵列结构和有机发光二极管。基板具有彼此相对的第一和第二表面。光吸收层设置在第一表面上，并且具有暴露第一表面的一部分的至少一个开口。有源阵列结构位于第二表面上，并且包括至少一条数据线，至少一条栅极线和至少一个电连接到栅极和数据线的开关装置。当从垂直于衬底的方向观察时，光吸收层与数据线和栅极线中的至少一个重叠。有机发光二极管与开关元件电连接，有机发光二极管在垂直于基板的方向观察时与开口重叠。

8. 发明申请

US20130320329A1 THIN FILM TRANSISTOR STRUCTURE AND ARRAY SUBSTRATE USING THE SAME 有权
标题翻译：薄膜晶体管结构和阵列基板使用相同
公开(公告)号：US20130320329A1
公开(公告)日：2013-12-05
申请号：US13781780
申请日：2013-03-01
申请人： E INK HOLDINGS INC.
发明人： Chia-Chun YEH , Xue-Hung TSAI , Cheng-Hang HSU , Wei-Tsung CHEN , Ted-Hong SHINN
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1214 , H01L27/1222 , H01L27/1225 , H01L27/1248
摘要： A thin film transistor structure is provided. The thin film transistor structure includes a first transistor having a first active layer, a second transistor having a second active layer, a first protection layer contacting the first active layer, and a second protection layer contacting the second active layer. The oxygen contents of the first and the second protection layers are controlled to affect the oxygen vacancy number of the first and the second active layers to satisfy the various electronic requirements of the first and the second transistors.
摘要翻译：提供薄膜晶体管结构。薄膜晶体管结构包括具有第一有源层的第一晶体管，具有第二有源层的第二晶体管，与第一有源层接触的第一保护层和与第二有源层接触的第二保护层。控制第一和第二保护层的氧含量以影响第一和第二有源层的氧空位数，以满足第一和第二晶体管的各种电子要求。

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