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1. 发明申请

US20060092301A1 High dynamic range image sensor cell 有权
标题翻译：高动态范围图像传感器单元
公开(公告)号：US20060092301A1
公开(公告)日：2006-05-04
申请号：US10980639
申请日：2004-11-03
申请人： Dun-Nian Yaung , Ho-Ching Chien , Tzu-Hsuan Hsu
发明人： Dun-Nian Yaung , Ho-Ching Chien , Tzu-Hsuan Hsu
IPC分类号： H04N5/335
CPC分类号： H04N5/35509
摘要： An image sensor cell includes a first MOS transistor coupled to an operating voltage for providing an output voltage of the image sensor cell with the output voltage changing conformingly with a voltage on a gate of the first MOS transistor. A photodiode is coupled to a floating node which further controls the voltage of the gate of the first MOS transistor. A photoconductor is coupled between the operating voltage and the floating node. The photoconductor has its resistance varying in response to a magnitude change of an imposed illumination so that the floating node is provided with additional electrical charges conformingly through the photoconductor while the photodiode drains electrical charges, thereby decreasing a voltage reduction rate of the voltage on the gate of the first MOS transistor.
摘要翻译：图像传感器单元包括耦合到工作电压的第一MOS晶体管，用于提供图像传感器单元的输出电压，输出电压与第一MOS晶体管的栅极上的电压一致地改变。光电二极管耦合到浮动节点，其进一步控制第一MOS晶体管的栅极的电压。光电导体耦合在工作电压和浮动节点之间。光电导体的电阻响应于施加的照明的幅度变化而变化，使得浮动节点在光电二极管耗尽电荷的同时，通过光电导体顺序地被提供额外的电荷，从而降低栅极上的电压的电压降低率的第一MOS晶体管。

2. 发明申请

US20060054939A1 CMOS image sensor 有权
标题翻译： CMOS图像传感器
公开(公告)号：US20060054939A1
公开(公告)日：2006-03-16
申请号：US10980959
申请日：2004-11-04
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Wen-De Wang , Ho-Ching Chien , Shou-Gwo Wuu
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Wen-De Wang , Ho-Ching Chien , Shou-Gwo Wuu
IPC分类号： H01L27/148
CPC分类号： H01L27/14643 , H01L27/14621 , H01L27/14627 , H01L27/14636
摘要： A complementary metal oxide semiconductor field effect transistor (CMOS-FET) image sensor. An active photosensing pixel is formed on a substrate. At least one side of the pixel has a width equal to or less than approximately 3 μm. At least one dielectric layer is disposed on the substrate covering the pixel. A color filter is disposed on the least one dielectric layer. A microlens array is disposed on the color filter of the pixel, and the sum of the thickness of all dielectric layers and the color filter divided by the pixel width is equal to or less than approximately 1.87.
摘要翻译：互补金属氧化物半导体场效应晶体管（CMOS-FET）图像传感器。在基板上形成有源感光像素。像素的至少一侧具有等于或小于约3μm的宽度。在覆盖像素的基板上设置至少一个电介质层。滤色器设置在至少一个电介质层上。微透镜阵列设置在像素的滤色器上，所有电介质层和滤色器的厚度之和除以像素宽度等于或小于约1.87。

3. 发明申请

US20070120160A1 Semiconductor Device Having Enhanced Photo Sensitivity and Method for Manufacture Thereof 有权
标题翻译：具有增强光敏性的半导体器件及其制造方法
公开(公告)号：US20070120160A1
公开(公告)日：2007-05-31
申请号：US11627883
申请日：2007-01-26
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
IPC分类号： H01L31/113
CPC分类号： H01L27/14689 , H01L27/1463
摘要： Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.
摘要翻译：提供半导体器件及其制造方法。在一个示例中，该方法包括在嵌入基板中的传感器上形成具有第一折射率的隔离结构。在隔离结构上形成具有与第一折射率不同的第二折射率的第一层。从隔离结构的至少一部分去除第一层。在去除第一层之后，在隔离结构上形成具有第三折射率的第二层。第三折射率基本上类似于第一折射率。

4. 发明授权

US08124495B2 Semiconductor device having enhanced photo sensitivity and method for manufacture thereof 有权
标题翻译：具有增强的光敏度的半导体器件及其制造方法
公开(公告)号：US08124495B2
公开(公告)日：2012-02-28
申请号：US11627883
申请日：2007-01-26
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
IPC分类号： H01L21/76
CPC分类号： H01L27/14689 , H01L27/1463
摘要： Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.
摘要翻译：提供半导体器件及其制造方法。在一个示例中，该方法包括在嵌入基板中的传感器上形成具有第一折射率的隔离结构。在隔离结构上形成具有与第一折射率不同的第二折射率的第一层。从隔离结构的至少一部分去除第一层。在去除第一层之后，在隔离结构上形成具有第三折射率的第二层。第三折射率基本上类似于第一折射率。

5. 发明授权

US07253458B2 CMOS image sensor 有权
标题翻译： CMOS图像传感器
公开(公告)号：US07253458B2
公开(公告)日：2007-08-07
申请号：US10980959
申请日：2004-11-04
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Wen-De Wang , Ho-Ching Chien , Shou-Gwo Wuu
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Wen-De Wang , Ho-Ching Chien , Shou-Gwo Wuu
IPC分类号： H01L27/148
CPC分类号： H01L27/14643 , H01L27/14621 , H01L27/14627 , H01L27/14636
摘要： A complementary metal oxide semiconductor field effect transistor (CMOS-FET) image sensor. An active photosensing pixel is formed on a substrate. At least one side of the pixel has a width equal to or less than approximately 3 μm. At least one dielectric layer is disposed on the substrate covering the pixel. A color filter is disposed on the least one dielectric layer. A microlens array is disposed on the color filter of the pixel, and the sum of the thickness of all dielectric layers and the color filter divided by the pixel width is equal to or less than approximately 1.87.
摘要翻译：互补金属氧化物半导体场效应晶体管（CMOS-FET）图像传感器。在基板上形成有源感光像素。像素的至少一侧具有等于或小于约3μm的宽度。在覆盖像素的基板上设置至少一个电介质层。滤色器设置在至少一个电介质层上。微透镜阵列设置在像素的滤色器上，所有电介质层和滤色器的厚度之和除以像素宽度等于或小于约1.87。

6. 发明授权

US06982443B2 Hollow dielectric for image sensor 有权
公开(公告)号：US06982443B2
公开(公告)日：2006-01-03
申请号：US10799986
申请日：2004-03-12
申请人： Tzu-Hsuan Hsu , Shou-Gwo Wuu , Ho-Ching Chien , Dun-Nian Yaung
发明人： Tzu-Hsuan Hsu , Shou-Gwo Wuu , Ho-Ching Chien , Dun-Nian Yaung
IPC分类号： H01L27/148 , H01L29/768
CPC分类号： H01L27/14632 , H01L27/1462
摘要： A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least one first insulating layer. The apertures form hollow regions in the at least one first insulating layer over the sensor, allowing more light or energy to pass through the at least one first insulating layer to the sensor, and increasing the sensitivity of the sensor.

7. 发明授权

US07338830B2 Hollow dielectric for image sensor 有权
标题翻译：空心电介质用于图像传感器
公开(公告)号：US07338830B2
公开(公告)日：2008-03-04
申请号：US11271116
申请日：2005-11-10
申请人： Tzu-Hsuan Hsu , Shou-Gwo Wuu , Ho-Ching Chien , Dun-Nian Yaung
发明人： Tzu-Hsuan Hsu , Shou-Gwo Wuu , Ho-Ching Chien , Dun-Nian Yaung
IPC分类号： H01L21/00
CPC分类号： H01L27/14632 , H01L27/1462
摘要： A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least one first insulating layer. The apertures form hollow regions in the at least one first insulating layer over the sensor, allowing more light or energy to pass through the at least one first insulating layer to the sensor, and increasing the sensitivity of the sensor.
摘要翻译：在设置在形成于半导体衬底中的传感器上的至少一个第一绝缘层中形成多个孔。第二绝缘层设置在至少一个第一绝缘层和至少一个第一绝缘层中的多个孔之上。所述孔在所述传感器上的所述至少一个第一绝缘层中形成中空区域，允许更多的光或能量穿过所述至少一个第一绝缘层到所述传感器，并且增加所述传感器的灵敏度。

8. 发明授权

US07232697B2 Semiconductor device having enhanced photo sensitivity and method for manufacture thereof 有权
标题翻译：具有增强的光敏度的半导体器件及其制造方法
公开(公告)号：US07232697B2
公开(公告)日：2007-06-19
申请号：US10818312
申请日：2004-04-05
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
IPC分类号： H01L21/339
CPC分类号： H01L27/14689 , H01L27/1463
摘要： Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.
摘要翻译：提供半导体器件及其制造方法。在一个示例中，该方法包括在嵌入基板中的传感器上形成具有第一折射率的隔离结构。在隔离结构上形成具有与第一折射率不同的第二折射率的第一层。从隔离结构的至少一部分去除第一层。在去除第一层之后，在隔离结构上形成具有第三折射率的第二层。第三折射率基本上类似于第一折射率。

9. 发明申请

US20050199921A1 Hollow dielectric for image sensor 有权
标题翻译：空心电介质用于图像传感器
公开(公告)号：US20050199921A1
公开(公告)日：2005-09-15
申请号：US10799986
申请日：2004-03-12
申请人： Tzu-Hsuan Hsu , Shou-Gwo Wuu , Ho-Ching Chien , Dun-Nian Yaung
发明人： Tzu-Hsuan Hsu , Shou-Gwo Wuu , Ho-Ching Chien , Dun-Nian Yaung
IPC分类号： H01L21/82 , H01L27/146 , H01L31/062
CPC分类号： H01L27/14632 , H01L27/1462
摘要： A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least one first insulating layer. The apertures form hollow regions in the at least one first insulating layer over the sensor, allowing more light or energy to pass through the at least one first insulating layer to the sensor, and increasing the sensitivity of the sensor.
摘要翻译：在设置在形成于半导体衬底中的传感器上的至少一个第一绝缘层中形成多个孔。第二绝缘层设置在所述至少一个第一绝缘层和所述至少一个第一绝缘层中的多个孔之上。所述孔在所述传感器上的所述至少一个第一绝缘层中形成中空区域，允许更多的光或能量穿过所述至少一个第一绝缘层到所述传感器，并且增加所述传感器的灵敏度。

10. 发明授权

US07242430B2 High dynamic range image sensor cell 有权
标题翻译：高动态范围图像传感器单元
公开(公告)号：US07242430B2
公开(公告)日：2007-07-10
申请号：US10980639
申请日：2004-11-03
申请人： Dun-Nian Yaung , Ho-Ching Chien , Tzu-Hsuan Hsu
发明人： Dun-Nian Yaung , Ho-Ching Chien , Tzu-Hsuan Hsu
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/35509
摘要： An image sensor cell includes a first MOS transistor coupled to an operating voltage for providing an output voltage of the image sensor cell with the output voltage changing conformingly with a voltage on a gate of the first MOS transistor. A photodiode is coupled to a floating node which further controls the voltage of the gate of the first MOS transistor. A photoconductor is coupled between the operating voltage and the floating node. The photoconductor has its resistance varying in response to a magnitude change of an imposed illumination so that the floating node is provided with additional electrical charges conformingly through the photoconductor while the photodiode drains electrical charges, thereby decreasing a voltage reduction rate of the voltage on the gate of the first MOS transistor.
摘要翻译：图像传感器单元包括耦合到工作电压的第一MOS晶体管，用于提供图像传感器单元的输出电压，输出电压与第一MOS晶体管的栅极上的电压一致地改变。光电二极管耦合到浮动节点，其进一步控制第一MOS晶体管的栅极的电压。光电导体耦合在工作电压和浮动节点之间。光电导体的电阻响应于施加的照明的幅度变化而变化，使得浮动节点在光电二极管耗尽电荷的同时，通过光电导体顺序地被提供额外的电荷，从而降低栅极上的电压的电压降低率的第一MOS晶体管。

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