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    • 1. 发明申请
    • LIGHT EMITTING DEVICE
    • 发光装置
    • US20110272730A1
    • 2011-11-10
    • US13099676
    • 2011-05-03
    • Duk-Kyu BAEYong-Sung JINJae-Ho SONGIn-Sung CHO
    • Duk-Kyu BAEYong-Sung JINJae-Ho SONGIn-Sung CHO
    • H01L33/00
    • H01L33/38
    • A light emitting device having an electrode structure in which resistance to electrostatic discharge (ESD) is increased, the static electricity is efficiently dispersed and a current concentration phenomenon is prevented, the light emitting device including: a substrate; a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer opposite to the first conductivity type semiconductor layer that are sequentially formed on the substrate; a first conductivity type electrode pad formed on the first conductivity type semiconductor layer; a second conductivity type electrode pad formed on the second conductivity type semiconductor layer; a first auxiliary electrode formed on the second conductivity type semiconductor layer to extend in one direction and having one end connected to the second conductivity type electrode pad and the other end formed in an opposite direction to a direction toward the first conductivity type electrode pad; and a second auxiliary electrode formed on the second conductivity type semiconductor layer to extend in one direction and including a main arm having one end connected to the second conductivity type electrode pad and the other end formed in a direction toward the first conductivity type electrode pad and a plurality of second auxiliary sub-electrodes extending from the other end of the main arm, wherein a direction in which an end of each of the second auxiliary sub-electrodes extends, is not toward the first conductivity electrode pad.
    • 一种发光器件,具有提高静电放电(ESD)电阻的电极结构,能够有效地分散静电并防止电流集中现象,所述发光元件包括:基板; 第一导电类型半导体层,有源层,与第一导电类型半导体层相对的第二导电类型半导体层,其依次形成在基板上; 形成在第一导电型半导体层上的第一导电型电极焊盘; 形成在所述第二导电类型半导体层上的第二导电型电极焊盘; 形成在所述第二导电型半导体层上的第一辅助电极,其在一个方向上延伸,并且一端连接到所述第二导电型电极焊盘,所述另一端形成在与朝向所述第一导电型电极焊盘的方向相反的方向上; 以及第二辅助电极,形成在所述第二导电类型半导体层上,以在一个方向上延伸并且包括主臂,所述主臂的一端连接到所述第二导电类型电极焊盘,所述另一端形成在朝向所述第一导电类型电极焊盘的方向上, 从所述主臂的另一端延伸的多个第二副辅助电极,其中每个所述第二辅助辅助电极的端部延伸的方向不朝向所述第一导电电极焊盘。