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    • 7. 发明申请
    • Method of reducing speckles and an apparatus therefor
    • 减少斑点的方法及其装置
    • US20070273953A1
    • 2007-11-29
    • US11649058
    • 2007-01-03
    • Sun-Lyeong HwangJung-Kee LeeDu-Chang Heo
    • Sun-Lyeong HwangJung-Kee LeeDu-Chang Heo
    • G02F1/01
    • G02B27/48G02B27/0933
    • Disclosed is a method of reducing speckles appearing in a laser beam. The method includes the steps of splitting the laser beam into two polarized light modes perpendicular to each other; modifying the phase of at least one of the two polarized light modes, and combining the two polarized light modes into a single laser beam outputted. The method is performed by using an apparatus that includes a light source to generate a laser beam, a polarization split filter to split the laser beam into two polarized light modes perpendicular to each other and then re-combine said two polarized light modes, and a multi-angle reflection mirror to reflect one of the two polarized light modes to the polarization split filter, wherein the polarization split filter is inserted in the multi-angle reflection mirror.
    • 公开了一种减少出现在激光束中的斑点的方法。 该方法包括将激光束分成彼此垂直的两个偏振光模式的步骤; 修改两个偏振光模式中的至少一个的相位,并将两个偏振光模式组合成输出的单个激光束。 该方法通过使用包括光源以产生激光束的装置,将激光束分裂为彼此垂直的两个偏振光模式并且然后将所述两个偏振光模式重新组合的偏振分割滤光器来执行,以及 多角度反射镜,以将两个偏振光模式中的一个反射到偏振分离滤光器,其中偏振分离滤光器插入多角度反射镜中。
    • 8. 发明授权
    • Semiconductor laser device and method of fabricating the same
    • 半导体激光器件及其制造方法
    • US07197057B2
    • 2007-03-27
    • US10896344
    • 2004-07-21
    • Sun-Lyeong Hwang
    • Sun-Lyeong Hwang
    • H01S5/24
    • B82Y20/00H01S5/12H01S5/2202H01S5/34366
    • The width of a current pass region of a semiconductor laser device is narrowed as much as possible, thus implementing a stable single transverse mode. The device is relatively resistant against physical impact. The device includes a semiconductor substrate having first and second opposite surfaces, and, in order, a first conductive type clad, active layer, etch stop layer, current blocking layer formed in a V-groove shape so that a part of the etch stop layer is exposed, second conductive type clad formed entirely over the entire of the V-groove and the current blocking layer, optical guide layer, current pass facilitation layer, cap layer, second conductive type electrode, and a first conductive type electrode formed on the second surface of the semiconductor substrate.
    • 半导体激光器件的电流通过区域的宽度尽可能地变窄,从而实现稳定的单横模式。 该装置相对抵抗物理冲击。 该器件包括具有第一和第二相对表面的半导体衬底,并且依次形成第一导电型包层,有源层,蚀刻停止层,形成为V形槽形状的电流阻挡层,使得一部分蚀刻停止层 在V槽和电流阻挡层整体上形成的第二导电型包层,形成在第二导电层上的导光层,电流通过促进层,盖层,第二导电型电极和第一导电型电极 半导体衬底的表面。