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1. 发明申请

US20050099761A1 Field converter for thrust generation 审中-公开
标题翻译：用于推力发生的场转换器
公开(公告)号：US20050099761A1
公开(公告)日：2005-05-12
申请号：US10941029
申请日：2004-09-15
申请人： Douglas Torr , Jose Vargas , Michael Graff
发明人： Douglas Torr , Jose Vargas , Michael Graff
IPC分类号： H02N1/00 , H02N11/00 , H01G4/20
CPC分类号： H02N1/00 , H02N11/00 , H02N11/006
摘要： An apparatus for generating an inhomogeneous electric field that can produce thrust having a first electrode constructed of a first conducting material, a second electrode constructed of a second conducting material separated from but in proximity of the first electrode and a first and second dielectric material interposed between the first and second electrodes, the first and second dielectric materials having a high and low mass density, respectively.
摘要翻译：一种用于产生不均匀电场的装置，其可以产生具有由第一导电材料构成的第一电极的推力，第二电极由与第一电极分开但邻近第一电极的第二导电材料构成，以及插入在第一导电材料之间的第一和第二电介质材料第一和第二电极，第一和第二电介质材料分别具有高和低质量密度。

2. 发明申请

US20140332347A1 APPARATUS AND METHOD FOR TREATING PLATE-SHAPED PROCESS ITEMS 审中-公开
标题翻译：用于处理板形工艺项目的装置和方法
公开(公告)号：US20140332347A1
公开(公告)日：2014-11-13
申请号：US14341641
申请日：2014-07-25
申请人： Michael Graff , Martin M. Menschick
发明人： Michael Graff , Martin M. Menschick
IPC分类号： B65G17/00
CPC分类号： B65G17/002 , H01L21/67057 , H01L21/67086 , H01L21/6776
摘要： In apparatuses and methods for treating a plate-shaped process item including a bottom side, a top side and edges between the bottom side and the top side with a process medium, a transport unit is used, which includes an endless unit with support elements projecting from the same. A bottom side of the plate-shaped process item is supported on support elements of the transport unit and the transport unit is driven to move the support elements together with the supported plate-shaped process item in parallel to a process media level of a process medium. In a first operating mode, during a movement of the plate-shaped process item in parallel to the process media level, no parts of the transport unit engage the edges of the plate-shaped process item.
摘要翻译：在用处理介质处理包括底侧，顶侧和底侧和顶侧之间的板状工艺物品的设备和方法中，使用传送单元，其包括具有突出的支撑元件的环形单元从同一个板状加工件的底侧被支撑在运输单元的支撑元件上，并且运送单元被驱动以将支撑元件与支撑的板状过程物体一起移动到平行于处理介质的处理介质水平。在第一操作模式中，在板状加工物体平行于加工介质水平运动的过程中，运输单元的任何部分都不接合板状加工件的边缘。

3. 发明申请

US20060118830A1 MSD raised metal interface features 审中-公开
标题翻译： MSD提高了金属界面特性
公开(公告)号：US20060118830A1
公开(公告)日：2006-06-08
申请号：US11326140
申请日：2006-01-05
申请人： Dennis Brunner , David Buster , Michael Graff , Daniel Luebbert , Nathan Kreutter , Rui Yang
发明人： Dennis Brunner , David Buster , Michael Graff , Daniel Luebbert , Nathan Kreutter , Rui Yang
IPC分类号： H01L29/768
CPC分类号： H01L24/10 , H01L21/4853 , H01L21/486 , H01L23/49816 , H01L23/4985 , H01L24/13 , H01L2224/13 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01057 , H01L2924/01061 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01093 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H05K3/002 , H05K3/4007 , H05K2201/0367 , H05K2201/0394 , H05K2201/09036 , H05K2201/09563 , H05K2201/09827 , H05K2203/0369 , H01L2924/00
摘要： Provided are partially etched dielectric films with raised conductive features. Also provided are methods for forming the raised conductive features in the dielectric films, which methods include partially etching the dielectric films.
摘要翻译：提供了具有凸起导电特征的部分蚀刻的电介质膜。还提供了用于在介电膜中形成凸起的导电特征的方法，该方法包括部分蚀刻介电膜。

4. 发明申请

US20050167829A1 Partially etched dielectric film with conductive features 失效
标题翻译：具有导电特性的部分蚀刻介质膜
公开(公告)号：US20050167829A1
公开(公告)日：2005-08-04
申请号：US10791966
申请日：2004-03-03
申请人： Dennis Brunner , David Buster , Michael Graff , Daniel Luebbert , Nathan Kreutter , Rui Yang , Guoping Mao
发明人： Dennis Brunner , David Buster , Michael Graff , Daniel Luebbert , Nathan Kreutter , Rui Yang , Guoping Mao
IPC分类号： H01L21/48 , H01L23/48 , H01L23/485 , H01L23/498 , H05K3/00 , H05K3/40
CPC分类号： H01L24/10 , H01L21/4853 , H01L21/486 , H01L23/49816 , H01L23/4985 , H01L24/13 , H01L2224/13 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01057 , H01L2924/01061 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01093 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H05K3/002 , H05K3/4007 , H05K2201/0367 , H05K2201/0394 , H05K2201/09036 , H05K2201/09563 , H05K2201/09827 , H05K2203/0369 , H01L2924/00
摘要： Provided are partially etched dielectric films with raised conductive features. Also provided are methods for forming the raised conductive features in the dielectric films, which methods include partially etching the dielectric films.
摘要翻译：提供了具有凸起导电特征的部分蚀刻的电介质膜。还提供了用于在介电膜中形成凸起的导电特征的方法，该方法包括部分蚀刻介电膜。

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