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1. 发明授权

US6091122A Fabrication of mid-cap metal gates compatible with ultra-thin dielectrics 失效
标题翻译：制造兼容超薄电介质的中帽金属门
公开(公告)号：US6091122A
公开(公告)日：2000-07-18
申请号：US21262
申请日：1998-02-10
申请人： Douglas Andrew Buchanan , Fenton Read McFeely , John Jacob Yurkas
发明人： Douglas Andrew Buchanan , Fenton Read McFeely , John Jacob Yurkas
IPC分类号： H01L29/78 , C23C16/16 , H01L21/28 , H01L21/3205 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： C23C16/16 , H01L21/28079 , H01L21/32051
摘要： A method of fabricating a mid-gap workfunction tungsten gate or W electrode directly onto a gate dielectric material for use in high speed/high density advanced MOS and CMOS devices is provided which utilizes low temperature/low pressure CVD of a tungsten carbonyl. MOS and CMOS devices containing one or more of the CVD W gates or W electrodes manufactured by the present invention are also provided herein.
摘要翻译：提供了一种将半间隙功函数钨栅极或W电极直接制造在用于高速/高密度先进MOS和CMOS器件的栅极电介质材料上的方法，该方法利用钨酸低温/低压CVD。本文还提供了包含由本发明制造的一个或多个CVD W栅极或W电极的MOS器件和CMOS器件。

2. 发明授权

US5789312A Method of fabricating mid-gap metal gates compatible with ultra-thin dielectrics 失效
标题翻译：制造与超薄电介质兼容的中间间隙金属栅的方法
公开(公告)号：US5789312A
公开(公告)日：1998-08-04
申请号：US739765
申请日：1996-10-30
申请人： Douglas Andrew Buchanan , Fenton Read McFeely , John Jacob Yurkas
发明人： Douglas Andrew Buchanan , Fenton Read McFeely , John Jacob Yurkas
IPC分类号： H01L29/78 , C23C16/16 , H01L21/28 , H01L21/3205
CPC分类号： C23C16/16 , H01L21/28079 , H01L21/32051
摘要： A method of fabricating a mid-gap workfunction tungsten gate or W electrode directly onto a gate dielectric material for use in high speed/high density advanced MOS and CMOS devices is provided which utilizes low temperature/low pressure CVD of a tungsten carbonyl. MOS and CMOS devices containing one or more of the CVD W gates or W electrodes manufactured by the present invention are also provided herein.
摘要翻译：提供了一种将半间隙功函数钨栅极或W电极直接制造在用于高速/高密度先进MOS和CMOS器件的栅极电介质材料上的方法，该方法利用钨酸低温/低压CVD。本文还提供了包含由本发明制造的一个或多个CVD W栅极或W电极的MOS器件和CMOS器件。

3. 发明授权

US06566281B1 Nitrogen-rich barrier layer and structures formed 失效
标题翻译：形成富氮阻挡层和结构
公开(公告)号：US06566281B1
公开(公告)日：2003-05-20
申请号：US08982150
申请日：1997-12-01
申请人： Douglas Andrew Buchanan , Matthew Warren Copel , Fenton Read McFeely , Patrick Ronald Varekamp , Mark Monroe Banaszak Holl , Kyle Erik Litz
发明人： Douglas Andrew Buchanan , Matthew Warren Copel , Fenton Read McFeely , Patrick Ronald Varekamp , Mark Monroe Banaszak Holl , Kyle Erik Litz
IPC分类号： H01L2131
CPC分类号： H01L21/3145 , H01L21/823857
摘要： The present invention discloses a method for forming a layer of nitrogen and silicon containing material on a substrate by first providing a heated substrate and then flowing a gas which has silicon and nitrogen atoms but no carbon atoms in the same molecule over said heated substrate at a pressure of not higher than 500 Torr, such that a layer of nitrogen and silicon containing material is formed on the surface. The present invention is further directed to a composite structure that includes a substrate and a layer of material containing nitrogen and silicon but not carbon overlying the substrate for stopping chemical species from reaching the substrate. The present invention is further directed to a structure that includes a semiconducting substrate, a gate insulator on the substrate, a nitrogen-rich layer on top of the gate insulator, and a gate electrode on the nitrogen-rich layer, wherein the nitrogen-rich layer blocks diffusion of contaminating species from the gate electrode to the gate insulator.
摘要翻译：本发明公开了一种在衬底上形成含氮和硅的材料层的方法，首先提供加热的衬底，然后在相同分子中将具有硅和氮原子但不含碳原子的气体在所述加热的衬底上以压力不高于500托，使得在表面上形成含氮和硅的材料层。本发明还涉及一种复合结构，该复合结构包括衬底和含有氮和硅而不是覆盖衬底的碳的材料层，用于阻止化学物质到达衬底。本发明还涉及一种结构，其包括半导体衬底，衬底上的栅极绝缘体，栅极绝缘体顶部的富氮层和富氮层上的栅电极，其中富氮污染物质从栅极扩散到栅极绝缘体。

4. 发明授权

US06245616B1 Method of forming oxynitride gate dielectric 失效
标题翻译：形成氮氧化物栅极电介质的方法
公开(公告)号：US06245616B1
公开(公告)日：2001-06-12
申请号：US09226369
申请日：1999-01-06
申请人： Douglas Andrew Buchanan , Matthew Warren Copel , Patrick Ronald Varekamp
发明人： Douglas Andrew Buchanan , Matthew Warren Copel , Patrick Ronald Varekamp
IPC分类号： H01L21336
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L29/513 , H01L29/518
摘要： A method for forming an oxynitride gate dielectric in a semiconductor device and gate dielectric structure formed by the method are disclosed. In the method, an oxynitride layer is first formed on a silicon surface and then re-oxidized with a gas mixture containing oxygen and at least one halogenated species such that an oxynitride layer with a controlled nitrogen profile and a layer of substantially silicon dioxide formed underneath the oxynitride film is obtained. The oxynitride film layer can be formed by either contacting a surface of silicon with at least one gas that contains nitrogen and/or oxygen at a temperature of not less than 500° C. or by a chemical vapor deposition technique. The re-oxidation process may be carried out by a thermal process in an oxidizing halogenated atmosphere containing oxygen and a halogenated species such as HCl, CH2Cl2, C2H3Cl3, C2H2Cl2, CH3Cl and CHCl3.
摘要翻译：公开了一种在半导体器件中形成氧氮化物栅极电介质的方法和通过该方法形成的栅极电介质结构。在该方法中，首先在硅表面上形成氧氮化物层，然后用含有氧和至少一种卤化物质的气体混合物再次氧化，使得具有受控氮分布的氧氮化物层和形成在下面的基本上二氧化硅层得到氧氮化物膜。氧氮化物膜层可以通过在不低于500℃的温度下或通过化学气相沉积技术使硅表面与至少一种含有氮和/或氧的气体接触而形成。再氧化过程可以通过在含氧和卤化物质如HCl，CH 2 Cl 2，C 2 H 3 Cl 3，C 2 H 2 Cl 2，CH 3 Cl和CHCl 3的氧化卤化气氛中的热处理进行。

5. 发明授权

US06852575B2 Method of forming lattice-matched structure on silicon and structure formed thereby 有权
公开(公告)号：US06852575B2
公开(公告)日：2005-02-08
申请号：US09898039
申请日：2001-07-05
申请人： Nestor Alexander Bojarczuk, Jr. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
发明人： Nestor Alexander Bojarczuk, Jr. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
IPC分类号： H01L21/316 , H01L21/00 , H01L21/84
CPC分类号： H01L21/02192 , B82Y10/00 , B82Y30/00 , H01L21/02293 , H01L21/31604
摘要： A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.

6. 发明授权

US07923743B2 Semiconductor structure including mixed rare earth oxide formed on silicon 有权
标题翻译：包括在硅上形成的混合稀土氧化物的半导体结构
公开(公告)号：US07923743B2
公开(公告)日：2011-04-12
申请号：US12620629
申请日：2009-11-18
申请人： Nestor Alexander Bojarczuk, Jr. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
发明人： Nestor Alexander Bojarczuk, Jr. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
IPC分类号： H01L29/06 , H01L33/00 , H01L27/15 , H01L31/12
CPC分类号： H01L21/02192 , B82Y10/00 , B82Y30/00 , H01L21/02293 , H01L21/31604
摘要： A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.
摘要翻译：形成半导体结构的方法（和结果）包括在硅上形成混合的稀土氧化物。混合的稀土氧化物与硅晶格匹配。

7. 发明授权

US07432550B2 Semiconductor structure including mixed rare earth oxide formed on silicon 有权
标题翻译：包括在硅上形成的混合稀土氧化物的半导体结构
公开(公告)号：US07432550B2
公开(公告)日：2008-10-07
申请号：US10998840
申请日：2004-11-30
申请人： Nestor Alexander Bojarczuk, Jr. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
发明人： Nestor Alexander Bojarczuk, Jr. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392 , H01L29/06 , H01L31/0328
CPC分类号： H01L21/02192 , B82Y10/00 , B82Y30/00 , H01L21/02293 , H01L21/31604
摘要： A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.
摘要翻译：形成半导体结构的方法（和结果）包括在硅上形成混合的稀土氧化物。混合的稀土氧化物与硅晶格匹配。

8. 发明申请

US20100065815A1 SEMICONDUCTOR STRUCTURE INCLUDING MIXED RARE EARTH OXIDE FORMED ON SILICON 有权
标题翻译：半导体结构，包括在硅上形成的混合稀土氧化物
公开(公告)号：US20100065815A1
公开(公告)日：2010-03-18
申请号：US12620629
申请日：2009-11-18
申请人： Nestor Alexander Bojarczuk, JR. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
发明人： Nestor Alexander Bojarczuk, JR. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
IPC分类号： H01L33/00 , H01L29/12
CPC分类号： H01L21/02192 , B82Y10/00 , B82Y30/00 , H01L21/02293 , H01L21/31604
摘要： A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.
摘要翻译：形成半导体结构的方法（和结果）包括在硅上形成混合的稀土氧化物。混合的稀土氧化物与硅晶格匹配。

9. 发明授权

US07648864B2 Semiconductor structure including mixed rare earth oxide formed on silicon 有权
标题翻译：包括在硅上形成的混合稀土氧化物的半导体结构
公开(公告)号：US07648864B2
公开(公告)日：2010-01-19
申请号：US12197079
申请日：2008-08-22
申请人： Nestor Alexander Bojarczuk, Jr. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
发明人： Nestor Alexander Bojarczuk, Jr. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
IPC分类号： H01L21/00 , H01L21/84 , H01L21/336 , H01L21/76 , H01L21/302
CPC分类号： H01L21/02192 , B82Y10/00 , B82Y30/00 , H01L21/02293 , H01L21/31604
摘要： A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.
摘要翻译：形成半导体结构的方法（和结果）包括在硅上形成混合的稀土氧化物。混合的稀土氧化物与硅晶格匹配。

10. 发明申请

US20080308831A1 SEMICONDUCTOR STRUCTURE INCLUDING MIXED RARE EARTH OXIDE FORMED ON SILICON 有权
标题翻译：半导体结构，包括在硅上形成的混合稀土氧化物
公开(公告)号：US20080308831A1
公开(公告)日：2008-12-18
申请号：US12197079
申请日：2008-08-22
申请人： Nestor Alexander Bojarczuk, JR. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
发明人： Nestor Alexander Bojarczuk, JR. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
IPC分类号： H01L33/00 , B32B9/00 , H01L21/31
CPC分类号： H01L21/02192 , B82Y10/00 , B82Y30/00 , H01L21/02293 , H01L21/31604
摘要： A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.
摘要翻译：形成半导体结构的方法（和结果）包括在硅上形成混合的稀土氧化物。混合的稀土氧化物与硅晶格匹配。

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