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1. 发明授权

US08411637B2 Method for dividing a subcarrier permutation zone and an information configuration system 有权
标题翻译：用于划分子载波排列区的方法和信息配置系统
公开(公告)号：US08411637B2
公开(公告)日：2013-04-02
申请号：US12744321
申请日：2007-11-23
申请人： Dongling Wu , Huajun Jiang , Gang Qiu , Shaogui Lu , Guangtao Han
发明人： Dongling Wu , Huajun Jiang , Gang Qiu , Shaogui Lu , Guangtao Han
IPC分类号： H04W4/00
CPC分类号： H04L5/0007 , H04L5/0091
摘要： A method for dividing a subcarrier permutation zone in an Orthogonal Frequency Division Multiple Access system and an information configuration system for dividing a subcarrier permutation zone in the Orthogonal Frequency Division Multiple Access system are disclosed in the present invention. Wherein, the method for dividing the subcarrier permutation zone includes the following steps: a configuration unit performing configuration to a subcarrier permutation zone division information, and sending the subcarrier permutation zone division information to a configuration synchronization unit; the configuration synchronization unit calculating a configuration effective frame number, and sending the subcarrier permutation zone division information and the configuration effective frame number to a base station; the base station dividing the subcarrier permutation zone according to the subcarrier permutation zone division information and the configuration effective frame number. With the present invention, it can uniformly configure, in the whole network, the frame in which the subcarrier permutation zone appears and the position in the frame, so as to avoid the co-frequency interference between each of the adjacent zones.
摘要翻译：本发明公开了一种在正交频分多址系统中划分副载波置换区的方法和用于划分正交频分多址系统中的子载波置换区的信息配置系统。其中，分割子载波置换区域的方法包括以下步骤：配置单元，对副载波置换区划信息进行配置，向配置同步单元发送子载波置换区划信息; 配置同步单元计算配置有效帧号，并将子载波置换区划分信息和配置有效帧号发送到基站; 基站根据副载波置换区划分信息和配置有效帧号划分副载波置换区。通过本发明，可以在整个网络中均匀地配置出现子载波置换区的帧和帧中的位置，以避免每个相邻区域之间的同频干扰。

2. 发明申请

US20100265911A1 A METHOD FOR DIVIDING A SUBCARRIER PERMUTATION ZONE AND AN INFORMATION CONFIGURATION SYSTEM 有权
标题翻译：一种用于分配子载波移动区域和信息配置系统的方法
公开(公告)号：US20100265911A1
公开(公告)日：2010-10-21
申请号：US12744321
申请日：2007-11-23
申请人： Dongling Wu , Huajun Jiang , Gang Qiu , Shaogui Lu , Guangtao Han
发明人： Dongling Wu , Huajun Jiang , Gang Qiu , Shaogui Lu , Guangtao Han
IPC分类号： H04W72/00
CPC分类号： H04L5/0007 , H04L5/0091
摘要： A method for dividing a subcarrier permutation zone in an Orthogonal Frequency Division Multiple Access system and an information configuration system for dividing a subcarrier permutation zone in the Orthogonal Frequency Division Multiple Access system are disclosed in the present invention. Wherein, the method for dividing the subcarrier permutation zone includes the following steps: a configuration unit performing configuration to a subcarrier permutation zone division information, and sending the subcarrier permutation zone division information to a configuration synchronization unit; the configuration synchronization unit calculating a configuration effective frame number, and sending the subcarrier permutation zone division information and the configuration effective frame number to a base station; the base station dividing the subcarrier permutation zone according to the subcarrier permutation zone division information and the configuration effective frame number. With the present invention, it can uniformly configure, in the whole network, the frame in which the subcarrier permutation zone appears and the position in the frame, so as to avoid the co-frequency interference between each of the adjacent zones.
摘要翻译：本发明公开了一种在正交频分多址系统中划分副载波置换区的方法和用于划分正交频分多址系统中的子载波置换区的信息配置系统。其中，分割子载波置换区域的方法包括以下步骤：配置单元，对副载波置换区划信息进行配置，向配置同步单元发送子载波置换区划信息; 配置同步单元计算配置有效帧号，并将子载波置换区划分信息和配置有效帧号发送到基站; 基站根据副载波置换区划分信息和配置有效帧号划分副载波置换区。通过本发明，可以在整个网络中均匀地配置出现子载波置换区的帧和帧中的位置，以避免每个相邻区域之间的同频干扰。

3. 发明申请

US20130099327A1 CMOS DEVICES AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： CMOS器件及其制造方法
公开(公告)号：US20130099327A1
公开(公告)日：2013-04-25
申请号：US13807309
申请日：2011-11-30
申请人： Hsiaochia Wu , Li Guo , Guangtao Han , Jian Yan
发明人： Hsiaochia Wu , Li Guo , Guangtao Han , Jian Yan
IPC分类号： H01L21/265 , H01L29/78
CPC分类号： H01L21/265 , H01L21/823814 , H01L29/1083 , H01L29/7833
摘要： A complementary metal-oxide semiconductor (CMOS) device is disclosed. The CMOS device includes a substrate, a well region formed in the substrate, and a gate formed on the substrate. The CMOS device also includes a first region and a second region formed in the well region and arranged at two sides of the gate. Further, the CMOS device includes a first light-doped drain (LDD) region and a second LDD region formed in the well region and extending the first region and the second region, respectively, towards the gate. The CMOS device also includes a first doped layer formed in the first LDD region, and a conduction type of an ion doped in the first doped layer is opposite to a conduction type of an ion doped in the first LDD region.
摘要翻译：公开了一种互补金属氧化物半导体（CMOS）器件。 CMOS器件包括衬底，形成在衬底中的阱区和形成在衬底上的栅极。 CMOS器件还包括形成在阱区中并布置在栅极两侧的第一区和第二区。此外，CMOS器件包括形成在阱区中的第一掺光漏极（LDD）区域和第二LDD区域，并分别朝向栅极延伸第一区域和第二区域。 CMOS器件还包括形成在第一LDD区域中的第一掺杂层，并且掺杂在第一掺杂层中的导电类型与在第一LDD区域中掺杂的离子的导电类型相反。

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