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1. 发明申请

US20090057819A1 ELECTRICAL FUSE DEVICE 失效
标题翻译：电保险装置
公开(公告)号：US20090057819A1
公开(公告)日：2009-03-05
申请号：US12203256
申请日：2008-09-03
申请人： Dong-suk SHIN , Andrew-tae KIM , Hong-jae SHIN
发明人： Dong-suk SHIN , Andrew-tae KIM , Hong-jae SHIN
IPC分类号： H01L23/525
CPC分类号： H01L23/5256 , H01L23/5258 , H01L27/112 , H01L2924/0002 , H01L2924/00
摘要： The invention relates generally to a fuse device of a semiconductor device, and more particularly, to an electrical fuse device of a semiconductor device. Embodiments of the invention provide a fuse device that is capable of reducing programming error caused by non-uniform current densities in a fuse link. In one respect, there is provided an electrical fuse device that includes: an anode; a fuse link coupled to the anode on a first side of the fuse link; a cathode coupled to the fuse link on a second side of the fuse link; a first cathode contact coupled to the cathode; and a first anode contact coupled to the anode, at least one of the first cathode contact and the first anode contact being disposed across a virtual extending surface of the fuse link.
摘要翻译：本发明一般涉及半导体器件的熔丝器件，更具体地，涉及一种半导体器件的电熔丝器件。本发明的实施例提供一种能够减少由熔丝链中的不均匀电流密度引起的编程误差的熔丝装置。在一方面，提供一种电熔丝装置，其包括：阳极; 熔丝链路，其在所述熔丝连接件的第一侧上耦合到所述阳极; 连接到所述熔丝链的第二侧上的所述熔断体的阴极; 耦合到阴极的第一阴极接触; 以及耦合到所述阳极的第一阳极触点，所述第一阴极触点和所述第一阳极触点中的至少一个跨越所述熔断体的虚拟延伸表面设置。

2. 发明申请

US20120223802A1 ELECTRICAL FUSE DEVICE 失效
标题翻译：电保险装置
公开(公告)号：US20120223802A1
公开(公告)日：2012-09-06
申请号：US13471508
申请日：2012-05-15
申请人： Dong-suk SHIN , Andrew-tae KIM , Hong-jae SHIN
发明人： Dong-suk SHIN , Andrew-tae KIM , Hong-jae SHIN
IPC分类号： H01H85/08
CPC分类号： H01L23/5256 , H01L23/5258 , H01L27/112 , H01L2924/0002 , H01L2924/00
摘要： The invention relates generally to a fuse device of a semiconductor device, and more particularly, to an electrical fuse device of a semiconductor device. Embodiments of the invention provide a fuse device that is capable of reducing programming error caused by non-uniform current densities in a fuse link. In one respect, there is provided an electrical fuse device that includes: an anode; a fuse link coupled to the anode on a first side of the fuse link; a cathode coupled to the fuse link on a second side of the fuse link; a first cathode contact coupled to the cathode; and a first anode contact coupled to the anode, at least one of the first cathode contact and the first anode contact being disposed across a virtual extending surface of the fuse link.
摘要翻译：本发明一般涉及半导体器件的熔丝器件，更具体地，涉及一种半导体器件的电熔丝器件。本发明的实施例提供一种能够减少由熔丝链中的不均匀电流密度引起的编程误差的熔丝装置。在一方面，提供一种电熔丝装置，其包括：阳极; 熔丝链路，其在所述熔丝连接件的第一侧上耦合到所述阳极; 连接到所述熔丝链的第二侧上的所述熔断体的阴极; 耦合到阴极的第一阴极接触; 以及耦合到所述阳极的第一阳极触点，所述第一阴极触点和所述第一阳极触点中的至少一个跨越所述熔断体的虚拟延伸表面设置。

3. 发明申请

US20110101492A1 SEMICONDUCTOR DEVICE HAVING THERMALLY FORMED AIR GAP IN WIRING LAYER AND METHOD OF FABRICATING SAME 有权
标题翻译：在接线层中形成热形成的空气隙的半导体器件及其制造方法
公开(公告)号：US20110101492A1
公开(公告)日：2011-05-05
申请号：US12987427
申请日：2011-01-10
申请人： Seok-jun WON , Andrew-tae KIM
发明人： Seok-jun WON , Andrew-tae KIM
IPC分类号： H01L23/48
CPC分类号： H01L23/5222 , H01L21/7682 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is provided. A unit wiring level of the semiconductor device includes; first and second wiring layers spaced apart from each other on a support layer, a large space formed adjacent to the first wiring layer and including a first air gap of predetermined width as measured from a sidewall of the first wiring layer, and a portion of a thermally degradable material layer formed on the support layer, small space formed between the first and second wiring layers, wherein the small space is smaller than the large space, and a second air gap at least partially fills the small space, and a porous insulating layer formed on the first and second air gaps.
摘要翻译：提供半导体器件。半导体器件的单位布线层包括：在支撑层上彼此间隔开的第一和第二布线层，与第一布线层相邻形成的大空间，并且包括从第一布线层的侧壁测量的预定宽度的第一气隙，形成在支撑层上的热降解材料层，形成在第一和第二布线层之间的小空间，其中小空间小于大空间，第二气隙至少部分地填充小空间，多孔绝缘层形成在第一和第二气隙上。

4. 发明申请

US20080179753A1 SEMICONDUCTOR DEVICE HAVING THERMALLY FORMED AIR GAP IN WIRING LAYER AND METHOD OF FABRICATING SAME 有权
标题翻译：在接线层中形成热形成的空气隙的半导体器件及其制造方法
公开(公告)号：US20080179753A1
公开(公告)日：2008-07-31
申请号：US11859822
申请日：2007-09-24
申请人： Seok-jun WON , Andrew-tae KIM
发明人： Seok-jun WON , Andrew-tae KIM
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L23/5222 , H01L21/7682 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is provided. A unit wiring level of the semiconductor device includes; first and second wiring layers spaced apart from each other on a support layer, a large space formed adjacent to the first wiring layer and including a first air gap of predetermined width as measured from a sidewall of the first wiring layer, and a portion of a thermally degradable material layer formed on the support layer, small space formed between the first and second wiring layers, wherein the small space is smaller than the large space, and a second air gap at least partially fills the small space, and a porous insulating layer formed on the first and second air gaps.
摘要翻译：提供半导体器件。半导体器件的单位布线层包括：在支撑层上彼此间隔开的第一和第二布线层，与第一布线层相邻形成的大空间，并且包括从第一布线层的侧壁测量的预定宽度的第一气隙，形成在支撑层上的热降解材料层，形成在第一和第二布线层之间的小空间，其中小空间小于大空间，第二气隙至少部分地填充小空间，多孔绝缘层形成在第一和第二气隙上。

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