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1. 发明授权

US08026520B2 Thin film transistor, method of fabricating the same, and organic light emitting diode display device having the thin film transistor 有权
标题翻译：薄膜晶体管，其制造方法以及具有薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US08026520B2
公开(公告)日：2011-09-27
申请号：US12393473
申请日：2009-02-26
申请人： Dong-kyu Lee , Mu-hyun Kim
发明人： Dong-kyu Lee , Mu-hyun Kim
IPC分类号： H01L29/10 , H01L21/00
CPC分类号： H01L29/78603 , H01L27/1248 , H01L27/3244 , H01L51/5253
摘要： A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT, the TFT includes a substrate, a protection layer disposed on the substrate, a buffer layer disposed on the protection layer, a semiconductor layer disposed on the buffer layer, a gate electrode disposed on the semiconductor layer, a gate insulating layer to electrically insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically insulated from the gate electrode and connected to the semiconductor layer. The protection layer is formed of an amine-containing clay. The OLED includes the TFT, an insulating layer disposed on the TFT, a first electrode connected to the drain electrode of the TFT, an organic layer disposed on the first electrode, and a second electrode disposed on the organic layer.
摘要翻译：薄膜晶体管（TFT），其制造方法和具有TFT的有机发光二极管（OLED）显示装置，TFT包括基板，设置在基板上的保护层，设置在基板上的缓冲层保护层，设置在缓冲层上的半导体层，设置在半导体层上的栅电极，将半导体层与栅极电绝缘的栅极绝缘层以及与栅电极电绝缘的源极和漏极，半导体层。保护层由含胺粘土形成。 OLED包括TFT，设置在TFT上的绝缘层，连接到TFT的漏电极的第一电极，设置在第一电极上的有机层和设置在有机层上的第二电极。

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