专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09391235B2 Patterned substrate for epitaxially growing semiconductor material, and method for patterning a substrate 有权
标题翻译：用于外延生长半导体材料的图案化衬底，以及用于图案化衬底的方法
公开(公告)号：US09391235B2
公开(公告)日：2016-07-12
申请号：US13299784
申请日：2011-11-18
申请人： Dong-Sing Wuu , Ray-Hua Horng , Wei-Ting Lin
发明人： Dong-Sing Wuu , Ray-Hua Horng , Wei-Ting Lin
IPC分类号： B32B3/30 , H01L33/20 , C30B25/18 , C30B29/40 , C30B25/04 , C30B29/60
CPC分类号： H01L33/20 , C30B25/04 , C30B25/18 , C30B29/406 , C30B29/60 , Y10T428/24479
摘要： A patterned substrate for epitaxially growing a semiconductor material includes: a top surface; and a plurality of spaced apart recesses, each of which is indented downwardly from the top surface and is defined by n crystal planes, n being an integer not less than 3. Each of the crystal planes has an upper edge meeting the top surface and is adapted for epitaxially growing the semiconductor material. A maximum distance from one of the upper edges of one of the recesses to an adjacent one of the upper edges of an adjacent one of the recesses is not greater than 500 nm.
摘要翻译：用于外延生长半导体材料的图案化衬底包括：顶表面; 以及多个间隔开的凹部，每个凹部从上表面向下凹入并由n个晶面限定，n为不小于3的整数。每个晶面具有满足顶表面的上边缘，并且是适于外延生长半导体材料。从一个凹部的一个上边缘到相邻的一个凹槽的相邻一个上边缘的最大距离不大于500nm。

2. 发明申请

US20120074453A1 PATTERNED SUBSTRATE AND LIGHT-EMITTING DIODE HAVING THE SAME 有权
标题翻译：图案基板和具有相同特性的发光二极管
公开(公告)号：US20120074453A1
公开(公告)日：2012-03-29
申请号：US13242414
申请日：2011-09-23
申请人： Dong-Sing Wuu , Ray-Hua Horng , Wei-Ting Lin
发明人： Dong-Sing Wuu , Ray-Hua Horng , Wei-Ting Lin
IPC分类号： H01L33/36 , H01L29/04
CPC分类号： H01L33/20 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L33/007
摘要： A patterned substrate for epitaxially forming a light-emitting diode includes: a top surface; a plurality of spaced apart recesses, each of which is indented downwardly from the top surface and each of which is defined by a recess-defining wall, the recess-defining wall having a bottom wall face, and a surrounding wall face that extends from the bottom wall face to the top surface; and a plurality of protrusions, each of which protrudes upwardly from the bottom wall face of the recess-defining wall of a respective one of the recesses. A light-emitting diode having the patterned substrate is also disclosed.
摘要翻译：用于外延形成发光二极管的图案化衬底包括：顶表面; 多个间隔开的凹部，每个凹槽从顶表面向下凹入，每个凹槽由凹口限定壁限定，凹口限定壁具有底壁面和围绕壁面延伸的周围壁面底壁面向上表面; 以及多个突起，每个突起从相应的一个凹部的凹陷限定壁的底壁面向上突出。还公开了具有图案化衬底的发光二极管。

3. 发明授权

US09142719B2 Patterned substrate and light-emitting diode having the same 有权
标题翻译：图案化基板和具有相同的发光二极管
公开(公告)号：US09142719B2
公开(公告)日：2015-09-22
申请号：US13242414
申请日：2011-09-23
申请人： Dong-Sing Wuu , Ray-Hua Horng , Wei-Ting Lin
发明人： Dong-Sing Wuu , Ray-Hua Horng , Wei-Ting Lin
IPC分类号： H01L21/02 , H01L33/20 , H01L33/00
CPC分类号： H01L33/20 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L33/007
摘要： A patterned substrate for epitaxially forming a light-emitting diode includes: a top surface; a plurality of spaced apart recesses, each of which is indented downwardly from the top surface and each of which is defined by a recess-defining wall, the recess-defining wall having a bottom wall face, and a surrounding wall face that extends from the bottom wall face to the top surface; and a plurality of protrusions, each of which protrudes upwardly from the bottom wall face of the recess-defining wall of a respective one of the recesses. A light-emitting diode having the patterned substrate is also disclosed.
摘要翻译：用于外延形成发光二极管的图案化衬底包括：顶表面; 多个间隔开的凹部，每个凹槽从顶表面向下凹入，每个凹槽由凹口限定壁限定，凹口限定壁具有底壁面和围绕壁面延伸的周围壁面底壁面向上表面; 以及多个突起，每个突起从相应的一个凹部的凹陷限定壁的底壁面向上突出。还公开了具有图案化衬底的发光二极管。

4. 发明授权

US08603886B2 Intermediate epitaxial structure and method for fabricating an epitaxial structure 有权
标题翻译：中间外延结构和制造外延结构的方法
公开(公告)号：US08603886B2
公开(公告)日：2013-12-10
申请号：US13331423
申请日：2011-12-20
申请人： Dong-Sing Wuu , Ray-Hua Horng , Tsung-Yen Tsai
发明人： Dong-Sing Wuu , Ray-Hua Horng , Tsung-Yen Tsai
IPC分类号： H01L21/20
CPC分类号： H01L21/02002 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02664 , H01L33/007 , H01L33/0079
摘要： A method for fabricating an epitaxial structure includes: (a) forming over a temporary substrate a patterned sacrificial layer that partially exposes the temporary substrate; (b) growing laterally and epitaxially a temporary epitaxial film over the patterned sacrificial layer and the temporary substrate; (c) forming over the temporary epitaxial film an etching-stop layer; (d) forming an epitaxial layer unit over the etching-stop layer; (e) removing the patterned sacrificial layer using a first etchant; and (f) removing the temporary epitaxial film using a second etchant.
摘要翻译：一种用于制造外延结构的方法包括：（a）在临时衬底上形成部分暴露临时衬底的图案化牺牲层; （b）横向和外延生长图案化的牺牲层和临时衬底上的临时外延膜; （c）在临时外延膜上形成蚀刻停止层; （d）在所述蚀刻停止层上形成外延层单元; （e）使用第一蚀刻剂去除图案化的牺牲层; 和（f）使用第二蚀刻剂去除所述临时外延膜。

5. 发明授权

US07998768B1 Method for forming a light emitting diode 有权
标题翻译：形成发光二极管的方法
公开(公告)号：US07998768B1
公开(公告)日：2011-08-16
申请号：US12903872
申请日：2010-10-13
申请人： Ray-Hua Horng , Dong-Sing Wuu
发明人： Ray-Hua Horng , Dong-Sing Wuu
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/46
摘要： A method for forming a light emitting diode includes: (a) growing epitaxially an epitaxial film over an epitaxial substrate; (b) roughening an upper surface of the epitaxial film; (c) forming a top electrode on the roughened upper surface of the epitaxial film; (d) detachably attaching a temporary substrate over the roughened upper surface of the epitaxial film; (e) roughening the lower surface of the epitaxial film; (f) disposing the roughened lower surface of the epitaxial film on a reflective top surface of an electrically conductive permanent substrate; (g) filling an optical adhesive in a gap between the roughened lower surface of the epitaxial film and the reflective top surface of the permanent substrate; and (h) after the step (g), removing the temporary substrate from the epitaxial film.
摘要翻译：一种形成发光二极管的方法包括：（a）在外延衬底上外延生长外延膜; （b）使外延膜的上表面粗糙化; （c）在所述外延膜的粗糙化的上表面上形成顶部电极; （d）在外延薄膜的粗糙化的上表面上可拆卸地将临时衬底附着; （e）使外延膜的下表面粗糙化; （f）将外延膜的粗糙化的下表面设置在导电永久基板的反射顶表面上; （g）将光学粘合剂填充在外延膜的粗糙化的下表面与永久性基板的反射顶表面之间的间隙中; 和（h）步骤（g）之后，从外延膜去除临时衬底。

6. 发明申请

US20090127575A1 Light-Emitting Diode Chip With High Light Extraction And Method For Manufacturing The Same 审中-公开
标题翻译：具有高光提取的发光二极管芯片及其制造方法
公开(公告)号：US20090127575A1
公开(公告)日：2009-05-21
申请号：US12039563
申请日：2008-02-28
申请人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
发明人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L29/22 , H01L33/0079 , H01L33/44
摘要： This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.
摘要翻译：本发明提供一种具有高光提取的发光二极管芯片，其包括基板，通过电光效应产生光的外延层结构，夹在基板和外延层结构之间的透明反射层，以及一对用于向外延层结构提供电源的电极。外延层结构的底表面和顶表面被粗糙化以具有不小于100nm均方根（rms）的粗糙度。因此外延层结构产生的光被有效地抽出。形成不大于5μm的透明反射层作为衬底和外延层结构之间的界面。朝向基板的光更有效地向上反射。因此光提取和亮度增强。还提供了用于制造本发明的发光二极管芯片的方法。

7. 发明申请

US20070206130A1 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US20070206130A1
公开(公告)日：2007-09-06
申请号：US11488012
申请日：2006-07-18
申请人： Dong-Sing Wuu , Ray-Hua Horng , Woei-Kai Wang , Kuo-Sheng Wen
发明人： Dong-Sing Wuu , Ray-Hua Horng , Woei-Kai Wang , Kuo-Sheng Wen
IPC分类号： G02F1/1333
CPC分类号： H01L33/10 , H01L33/20
摘要： A light emitting device includes: a light-enhancing layered structure of a hexagonal crystal system, the light-enhancing layered structure including a light-enhancing layer having a planar surface that is formed with a plurality of light-enhancing units thereon, each of the light-enhancing units extending in a normal direction relative to the planar surface, being tapered from the planar surface, and having three inclined faces that are adjoined side-by-side and that are respectively parallel to corresponding symmetrical ones of the crystal planes {11 2 k} of the hexagonal crystal system, where k=2 to 5; and a light emitting layered structure formed on the light-enhancing layered structure.
摘要翻译：发光器件包括：六方晶系的增光层状结构，所述光增强层状结构包括具有在其上形成有多个光增强单元的平坦表面的光增强层，相对于平面在法线方向延伸的光增强单元从平面呈锥形，并且具有并列邻接的三个倾斜面，并且分别与晶面{11 其中 2 k}，其中 k = 2至5; 以及形成在增光分层结构上的发光层状结构。

8. 发明授权

US06287882B1 Light emitting diode with a metal-coated reflective permanent substrate and the method for manufacturing the same 有权
标题翻译：具有金属涂层反射永久性基板的发光二极管及其制造方法
公开(公告)号：US06287882B1
公开(公告)日：2001-09-11
申请号：US09411945
申请日：1999-10-04
申请人： Kuo-Hsiung Chang , Kun-Chuan Lin , Ray-Hua Horng , Man-Fang Huang , Dong-Sing Wuu , Sun-Chin Wei
发明人： Kuo-Hsiung Chang , Kun-Chuan Lin , Ray-Hua Horng , Man-Fang Huang , Dong-Sing Wuu , Sun-Chin Wei
IPC分类号： H01L2100
CPC分类号： H01L33/405 , H01L33/0079
摘要： A method of manufacturing a light emitting diode (LED) includes growing a light emitting region on a temporary substrate, bonding a metal-coated reflective permanent substrate and then removing the temporary substrate. The reflective metal layer also serves as a bonding agent for bonding the permanent substrate. The bonded LED element and permanent substrate are heated in a wafer bonding tool that includes a graphite lower chamber and a graphite upper cover with a stainless steel screw. Because of the different thermal expansion coefficients between stainless and graphite, the stainless steel screw applies a pressure to the bonded structure during the heating process to assist the bonding of the permanent substrate.
摘要翻译：一种制造发光二极管（LED）的方法包括在临时衬底上生长发光区域，将金属涂覆的反射永久衬底接合，然后移除临时衬底。反射金属层也用作粘合永久性基板的粘合剂。粘结的LED元件和永久性基板在包括石墨下部腔和具有不锈钢螺钉的石墨上盖的晶片接合工具中被加热。由于不锈钢和石墨之间的热膨胀系数不同，不锈钢螺丝在加热过程中对接合结构施加压力，以有助于永久性基体的结合。

9. 发明授权

US08765580B2 Method for fabricating semiconductor devices 有权
公开(公告)号：US08765580B2
公开(公告)日：2014-07-01
申请号：US13242362
申请日：2011-09-23
申请人： Dong-Sing Wuu , Ray-Hua Horng
发明人： Dong-Sing Wuu , Ray-Hua Horng
IPC分类号： H01L21/00 , H01L29/06 , H01L33/00 , H01L23/31 , H01L21/683 , H01L21/78 , H01L21/02
摘要： A method for fabricating semiconductor devices includes: (a) forming a layered structure that includes a temporary substrate, a plurality of spaced apart sacrificial film regions on the temporary substrate, and a plurality of valley-and-peak areas among the sacrificial film regions; (b) growing laterally and epitaxially an epitaxial film layer over the sacrificial film regions and the valley-and-peak areas, wherein gaps are formed among the epitaxial film layer and the valley-and-peak areas; (c) forming a conductive layer to contact the epitaxial film layer; (d) forming a plurality of grooves to divide the epitaxial film layer and the conductive layer into a plurality of epitaxial structures on the temporary substrate; and (e) removing the temporary substrate and the sacrificial film regions from the epitaxial structures by etching the sacrificial film regions through the gaps and the grooves.

10. 发明授权

US08022412B2 Epitaxial structure having low defect density 有权
标题翻译：具有低缺陷密度的外延结构
公开(公告)号：US08022412B2
公开(公告)日：2011-09-20
申请号：US12688005
申请日：2010-01-15
申请人： Dong-Sing Wuu , Ray-Hua Horng , Shih-Ting Chen , Tshung-Han Tsai , Hsueh-Wei Wu
发明人： Dong-Sing Wuu , Ray-Hua Horng , Shih-Ting Chen , Tshung-Han Tsai , Hsueh-Wei Wu
IPC分类号： H01L29/20 , H01L29/15
CPC分类号： H01L21/02658 , C30B25/183 , C30B25/186 , C30B29/403 , H01L21/0243 , H01L21/02494 , H01L21/02518 , H01L21/02642 , H01L21/02647
摘要： An epitaxial structure having a low defect density includes: a base layer; a first epitaxial layer having a plurality of concentrated defect groups, and an epitaxial surface that has a plurality of first recesses corresponding in position to the concentrated defect groups, the sizes of the first recesses being close to each other; and a plurality of defect-termination blocks respectively and filling the first recesses and having polished surfaces. The defect-termination blocks are made of a material which is different in removal rate from that of the first epitaxial layer. The polished surfaces are substantially flush with the epitaxial surface so that the first epitaxial layer has a substantially planarized crystal growth surface
摘要翻译：具有低缺陷密度的外延结构包括：基层; 具有多个集中缺陷组的第一外延层和具有与所述集中缺陷组相对应的多个第一凹部的外延表面，所述第一凹部的尺寸彼此靠近; 和多个缺陷端接块，并填充第一凹部并具有抛光表面。缺陷端接块由与第一外延层的去除速率不同的材料制成。抛光表面基本上与外延表面齐平，使得第一外延层具有基本平坦化的晶体生长表面

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式