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    • 7. 发明授权
    • Thin film transistor array panel and liquid crystal display including the panel
    • 薄膜晶体管阵列面板和液晶显示器包括面板
    • US07294854B2
    • 2007-11-13
    • US10525039
    • 2002-09-18
    • Sang-Soo KimDong-Gyu Kim
    • Sang-Soo KimDong-Gyu Kim
    • H01L29/04H01L31/036H01L31/0376H01L31/20
    • H01L27/124G02F1/136213G02F1/136286H01L27/1255
    • A gate wire including a gate line extending in a transverse direction and a gate electrode connected to the gate line is form on an insulating substrate. A storage capacitor wire including a storage capacitor electrode line extending in the transverse direction and a storage electrode connected to the storage capacitor electrode line and located at the edges of a pixel area is formed. A semiconductor layer is formed on a gate insulating film covering the gate wire and the storage capacitor wire. A data wire is formed on the gate insulating film or the semiconductor layer and includes a data line intersecting the gate line to define the pixel area, a source electrode connected to the data line and located on the semiconductor layer, a drain electrode formed on the semiconductor layer and located opposite the source electrode with respect to the gate electrode, and a first storage capacitor conductor overlapping the storage capacitor electrode via the gate insulating film to form a storage capacitor. A pixel electrode electrically connected to the drain electrode and the first storage capacitor conductor is formed on the protective layer covering the data wire.
    • 包括在横向延伸的栅极线和连接到栅极线的栅电极的栅极线形成在绝缘基板上。 形成包括在横向延伸的辅助电容电极线和与辅助电容电极线连接并位于像素区域的边缘的存储电极的保持电容配线。 在覆盖栅极线和保持电容配线的栅极绝缘膜上形成半导体层。 数据线形成在栅极绝缘膜或半导体层上,并且包括与栅极线相交以限定像素区域的数据线,连接到数据线并位于半导体层上的源电极,形成在栅极绝缘膜上的漏电极 半导体层,并且相对于栅极位于与源电极相对的位置;以及第一存储电容器导体,经由栅极绝缘膜与存储电容电极重叠,形成存储电容。 电连接到漏电极和第一辅助电容导体的像素电极形成在覆盖数据线的保护层上。