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    • 10. 发明授权
    • Antireflective hardmask composition and methods for using same
    • 防反射硬掩模组​​合物及其使用方法
    • US07405029B2
    • 2008-07-29
    • US11325281
    • 2006-01-04
    • Chang Il OhDong Seon UhDo Hyeon KimJin Kuk LeeIrina NamHui Chan YunJong Seob Kim
    • Chang Il OhDong Seon UhDo Hyeon KimJin Kuk LeeIrina NamHui Chan YunJong Seob Kim
    • G03C1/73G03C1/76G03F7/095
    • G03F7/091
    • Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: (a) a polymer component including at least one polymer having a monomeric unit of Formula (I) wherein R1 and R2 may each independently be hydrogen, hydroxyl, C1-10 alkyl, C6-10 aryl, allyl, or halo; R3 and R4 may be each independently be hydrogen, a crosslinking functionality, or a chromophore; R5 and R6 may each independently be hydrogen or an alkoxysiloxane having the structure of Formula (II), wherein at least one of R5 and R6 is an alkoxysilane; wherein R8, R9, and R10 may each independently be a hydrogen, alkyl, or aryl; and x is 0 or a positive integer; R7 may be hydrogen, C1-10 alkyl, C6-10 aryl, or allyl; and n is a positive integer; (b) a crosslinking component; and (c) an acid catalyst.
    • 提供了具有抗平滑印刷工艺中有用的抗反射性能的硬掩模组合物,其使用方法以及通过这些方法制造的半导体器件。 本发明的抗反射硬掩模组​​合物包括:(a)包含至少一种具有式(I)的单体单元的聚合物的聚合物组分,其中R 1和R 2各自 独立地是氢,羟基,C 1-10烷基,C 6-10芳基,烯丙基或卤素; R 3和R 4可以各自独立地为氢,交联官能团或发色团; R 5和R 6可各自独立地为氢或具有式(II)结构的烷氧基硅氧烷,其中R 5和 和R 6是烷氧基硅烷; 其中R 8,R 9和R 10可各自独立地为氢,烷基或芳基; x为0或正整数; R 7可以是氢,C 1-10烷基,C 6-10芳基或烯丙基; 并且n是正整数; (b)交联组分; 和(c)酸催化剂。